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  • 型号: 2SC39310CL
  • 制造商: Panasonic Corporation
  • 库位|库存: xxxx|xxxx
  • 要求:
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+xxxx $xxxx ¥xxxx

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2SC39310CL产品简介:

ICGOO电子元器件商城为您提供2SC39310CL由Panasonic Corporation设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 2SC39310CL价格参考。Panasonic Corporation2SC39310CL封装/规格:晶体管 - 双极 (BJT) - 射频, RF Transistor NPN 20V 15mA 650MHz 150mW 表面贴装 S迷你型3-G1。您可以下载2SC39310CL参考资料、Datasheet数据手册功能说明书,资料中有2SC39310CL 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

TRANS NPN 20VCEO 15MA S-MINI 3P

产品分类

RF 晶体管 (BJT)

品牌

Panasonic Electronic Components

数据手册

http://industrial.panasonic.com/www-cgi/jvcr13pz.cgi?E+SC+4+BFA7001+2SC3931+8+WW

产品图片

产品型号

2SC39310CL

rohs

含铅 / 不符合限制有害物质指令(RoHS)规范要求

产品系列

-

不同 Ic、Vce 时的DC电流增益(hFE)(最小值)

65 @ 1mA,6V

产品目录绘图

产品目录页面

点击此处下载产品Datasheet

供应商器件封装

S迷你型3-G1

其它名称

2SC39310CLCT

功率-最大值

150mW

包装

剪切带 (CT)

噪声系数(dB,不同f时的典型值)

3.3dB @ 100MHz

增益

24dB

安装类型

表面贴装

封装/外壳

SC-70,SOT-323

晶体管类型

NPN

标准包装

1

电压-集射极击穿(最大值)

20V

电流-集电极(Ic)(最大值)

15mA

频率-跃迁

650MHz

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PDF Datasheet 数据手册内容提取

This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SC3931 Silicon NPN epitaxial planar type / For high-frequency amplification e Unit: mm 0.3+–00..01 25) 0.15+–00..0150 4 0. ■ Features c 3 ( •••OHS-piMgtihim ntiru atmynps fieot irpo aRnc Ffkr aeagqmeu,p ealnilflcioycw aftiTinogn d oofw FnMsi/zAinMg orfa dthioe sequipmnent and e d1.25±0.10 2.1±0.1 5˚ e. 1 2 g automatic insertion through the tape packing a a (0.65) (0.65) st 2±0.1 u 1.3±0.1 e 0. 2.0±0.2 cl ■ Absolute Maximum Ratings Tan = 25°C 10˚ ecy Collector-basPea vraolmtaegtee r(Emitter opeen) SVymCBbOol Ra3t0ing UVnnit uct lif0.9±0.1+0.20.9–0.1 Collector-emitter voltage (Base open) VCEO 20 iV od 0.1 1: Base Emitter-base voltage (Cotllector open) VEBO n3tV r Pr 0 to 23::C Eomllietctetorr CCoolllleeccttoorr pcuorwreenr tdissnipation PICC 11550 mmWA g fou pe SMini3E-GIA1 JP: aScCka-o7g0en. Junction teimperature oTj 150 °C win Me atryking Symbol: U m ati ■MSCEBFTotrmoaEoarslrwnileltaeest-agceiecrttremido-ato b rtrince-taibtu cmsefarerarrpsDe evevPleqn ooruCavtaill eorttttnhaaaurlatggcmraaneyeegsre e(fatCe e(croErs trlmaeletiricetoit/tso e*rrtD ioioccppssee cnn )T)oan t=SiT VVy2nsVhtmfCEg5FBTuBBEbE°OOeCold− ±5ip 5IIVVVl3nCE CCCt °ac=o=BBBlC n1+1===u001 e666 d 5µµ pdV0VVleA A,,,s ,am, I II mIEIEEfnaCE C i=a ==°o==eio Cl n− −−lntdn00111 tdo e mimmddetiiinAoAAnossna, afsccwn i=nooc n2cnne0ttg i0i t eMnnyUuuHmpiRzeeecLdd o ttanyy.bM4pp36p35o05ien0eautdn laasT76t52yoep00nsit ci.Mn2cf6ao0ox.jrp/eMUmVVnnHV/izt Common-emitter reversen tcransfer Cre VCB = 6 V, IE = −1o lmlA, f = .1s0.7 MHz 0.8 1.0 pF capacitance na t f w w Power gain nte GP VCB = 6 Vv,i IEsi = −1/ mwA, f = 100 MHz 24 dB Noise figurMeai NF VCB =s 6e V, IE = p−:1/ mA, f = 100 MHz 3.3 dB a tt Note)1.Measuring methods are based on JAPANESE IeNDUSTRIhAL STANDARD JIS C 7030 measuring methods for transistors. 2.*:Rank classification Pl Rank C D h 65 to 160 100 to 260 FE Publication date: March 2003 SJC00142BED 1

This product complies with the RoHS Directive (EU 2002/95/EC). 2SC3931 P  T I  V I  I C a C CE C B 200 12 Ta = 25°C 12 VCE = 6 V ()ollector power dissipation P mWC1162840000 ()Collector current I mAC 108642 nIBc = 10864200000 µµµµµAAAAAe/e()Collector current I mAC 108642 d Tag = e2.5°C C a a st 00 40 80 120 160 00 6 12 u18 00 60 e 120 180 Ambient temperature Ta (°C) nCollector-emitter voltage VCE (V) Basec cyurcrlent IB (µA) e n f li t I  V e V  I c h  I C BE CE(sat) C u FE C M()()Collector current I mATransition frequency f MHzCT118642200000322110000000050505000 aBTaasM0 i=e.4- Da7ei5m°nCiitt2t0fe5.Ter8° Cvnn−o2lat5 a1I°gnsC.Et2ec VeTVVB/aC1E C=B. E 6 D= 2(=iVc 56 6° s)CV Vc2.0ontionΩ()()Collector-emitter saturation voltage V VReverse transfer impedance Z CE(sat)rbu0e111.0010208642.d111000000000 .ni1PpllneacCtlaonulsleeidec2pd 5t1ole Z°Crv isramcbh mu stfnaT−ritira2taeoei 5 =lnpn °fl I:ttdnC7 E/5 t ooI1/e°lCC0ddel iinfTV Iww( Cin=aomC ss a/ =B 2nI Aaw cc= B2wnM i5)=g6noo°Hwc CV1n.cfzn0ne1ttgs eo0ii t 0etunnyUryu umpipReePe()Forward current transfer ratio hn-emitter reverse transfer capacitance C pFceLrFEredd o ott33211a221100n604826d......yy.0000000406284b0.ppp1oeeautdnC loallaestctCo1oeTrrn seaic t −=u 22c r7i55.r5°°e °nCCcnVCft o CoI.1CEjr0fTI C= aV ( p= =m1/Cm 10E2A .5em=a7°) tACM6in /VHo1z0n0. o m m −0 0.1 −1 −10 −100 −0 0.1 −1 −10 Co 00.1 1 10 100 Emitter current IE (mA) Emitter current IE (mA) Collector-emitter voltage VCE (V) 2 SJC00142BED

This product complies with the RoHS Directive (EU 2002/95/EC). 2SC3931 C  V G  I NF  I ob CB P E E (pF)Cob 11..20 IfTE =a = =1 0 2M5°HCz 40 fRT =ag ==1 025050 ° MΩCHz 1120 TfR =ag ==1 025050 ° MkCΩHz Collector output capacitance (Common base, input open circuited) 0000....086420 5 10 15 20 25 30 ()Power gain G dBP 312−0000 0.1a−1nVCE6 = Vc 1−01 0V ue−100/e()Noise figure NF dB −08642 0d.1 V−1CE = 6 Ve, 1s0−t V10age.−100 Collector-base voltage V (V) Emitter current I (mA) Emitter cuclrrent I (mA) CB E y E n c e n f li t b  g e b  g c b  g ie ie re re u fe fe M()Input susceptance b mSie 2110062840=−I 0.5 mAEyVai−eC1 mA E=2 =−5gif 32i 1e=D 50m+8 2 1 VAj50b.ii7e M6−H1450nz 80mA9st−7 m11152A000c15 o()Reverse transfer susceptance b mSree−−−−−−−d6012345 0ni.5yVnreC E=c −tl =g n 0r1eu. 04+ei V djbdre −e 0s. m3ff a=ia o1il−5nIlE 0tn0 =t−.Mo2 e−4−H1e 7m1n wz m0minA−s0Aa A0na5c.1n810gn2o.c 75cfnet eo0it tunnyryu uppeePe()Forward transfer susceptance b mSerfedd −−ott−−−−11224680dyy0000000b0pp− 0.4 mAofee =u t−−−d1 12452l 0mmm01 IM5aEAAAs 0t=H1 o−ze57104ns 0im0t0A ci.10nc10f6050o08o.yVjr1feC0 E=p. 7 =/mg8 f10eea 0+t V injb/5foe810n0. ()e b mSoe 110...208 =−I 0.5 mAEIn−1 mApuati conbnt−doe4eu cmnt−aA−2na7 cm gmenA1o A 0ceg0iee /(mDSi)1s50continu Replvearse traenp slfevriam csnointed puf:dc/ toa/lnddlciiweos gwcrwei o w(nm.nStgsi) eUmiRcL oan.Fporawanrda transfer conductance gfe (mS) eptanc 0.6 M 58 eas htt usc Pl ut s 0.4 p ut 25 O 0.2 f = 10.7 MHz yVoCe E= = g 1oe0 + V jboe 0 0 0.1 0.2 0.3 0.4 0.5 Output conductance g (mS) oe SJC00142BED 3

Request for your special attention and precautions in using the technical information and semiconductors described in this book (1)(cid:9)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2)(cid:9)The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. / (3)(cid:9)The products described in this book are intended to be used for standard applications or general electronic equipment (such as office e equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: (cid:150) Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support c systems and safety devices) in which exceptional quality and reliability are required, or if thed failure or malfunction of the prod- ucts may directly jeopardize life or harm the human body. (cid:150) Any applications other than the standard applications intendend. . e e (4)(cid:9)The products and product specifications described in this book are subject to change without notice for modificationg and/or im- a provement. At the final stage of your design, purchaasing, or use of the products, therefore, ask for the most ups-tto-date Product Standards in advance to make sure that the latest specifications satisfy your reuquirements. e cl y (5)(cid:9)When designing your equipment, comply nwith the range of absolute maximum rating and the guarancteed operating conditions (operating power supply voltage and operating environment etc.). Enspecially, please be careful not tof eexceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwi slei, we will not be liable for any t defect which may arise later in yoeur equipment. c u (cid:9) Even when the products are used within the guaranteed vailues, take into the consideration odf incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redunodant design, arresting the spread of fire t r or preventing glitch are rtecommended in order to prevent physical injury, fire, social damPages, for example, by using the products. n r n u (6)(cid:9)Comply with the instructions for use in order to prevent breakdown and characteroistics change due to external factors (ESD, EO.S, f e n thermal stress and mechanical stress) at the time of handling, mounting or atg customepr's process. When using products for owhich damp-proof packing is required, satisfy thoe conditions, such as shelf life and nthe elapseyd time since first opening the packagteis. i wi e t m a (7M)(cid:9)TEhleics trbioca oIkn dmuDsatyrii abl eC noo.,t Lsrtedp.rintedc or reproduceed dw ihenthclenru wedhde olsl ymfa ioaoirln ltnptoaeretniansallacyn,n ocwcneit tihtonnyuuutp teeehedd tptryyiboppro eewutrdi tlteanst opeensritm cii.ssncifoono.j ropf/ Meant/sushita /Discontinu pla plamned ddiiscwionntgi UmiRcL oan.pana e o e nc oll .s a f w n t w nte visi /w ai e :/ p M s a tt e h Pl