ZXTDBM832 MPPS™ Miniature Package Power Solutions DUAL 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY V =20V;R = 47m ;I = 4.5A CEO SAT C DESCRIPTION Packagedintheinnovative3mmx2mmMLP(MicroLeadedPackage)outline, thesenew4thgenerationlowsaturationdualtransistorsofferextremelylowon statelossesmakingthemidealforuseinDC-DCcircuitsandvariousdriving and power management functions. Additionally users gain several otherkey benefits: Performance capability equivalent to much largerpackges Improved circuit efficiency & power levels 3mm x 2mm (Dual die)MLP PCB area and device placement savings Lower package height (nom 0.9mm) C2 C1 Reduced component count FEATURES • Low Equivalent On Resistance B2 B1 • Extremely Low Saturation Voltage(150mV @1A) • h characterised up to 6A FE • I =4.5A Continuous Collector Current C E2 E1 • 3mm x 2mmMLP APPLICATIONS • DC - DC Converters • Charging circuits • Power switches PINOUT • Motor control ORDERING INFORMATION DEVICE REEL TAPE QUANTITY WIDTH PERREEL ZXTDCM832TA 7(cid:1)(cid:1) 8mm 3000 ZXTDCM832TC 13(cid:1)(cid:1) 8mm 10000 DEVICE MARKING 3mm x 2mmMLP DBB underside view ISSUE 1 - JUNE 2002 1

ZXTDBM832 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT UNIT Collector-BaseVoltage VCBO 40 V Collector-EmitterVoltage VCEO 20 V Emitter-BaseVoltage VEBO 7.5 V PeakPulseCurrent ICM 12 A ContinuousCollectorCurrent(a)(f) IC 4.5 A ContinuousCollectorCurrent(b)(f) IC 5 A BaseCurrent IB 1000 mA PowerDissipationatTA=25°C(a)(f) PD 1.5 W LinearDeratingFactor 12 mW/°C PowerDissipationatTA=25°C(b)(f) PD 2.45 W LinearDeratingFactor 19.6 mW/°C PowerDissipationatTA=25°C(c)(f) PD 1 W LinearDeratingFactor 8 mW/°C PowerDissipationatTA=25°C(d)(f) PD 1.13 W LinearDeratingFactor 9 mW/°C PowerDissipationatTA=25°C(d)(g) PD 1.7 W LinearDeratingFactor 13.6 mW/°C PowerDissipationatTA=25°C(e)(g) PD 3 W LinearDeratingFactor 24 mW/°C OperatingandStorageTemperatureRange Tj:Tstg -55 to +150 °C THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT JunctiontoAmbient(a)(f) RθJA 83.3 °C/W JunctiontoAmbient(b)(f) RθJA 51 °C/W JunctiontoAmbient(c)(f) RθJA 125 °C/W JunctiontoAmbient(d)(f) RθJA 111 °C/W JunctiontoAmbient(d)(g) RθJA 73.5 °C/W JunctiontoAmbient(e)(g) RθJA 41.7 °C/W Notes (a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditionswith all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditionswith all exposed pads attached.The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditionswith minimal lead connections only. (d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditionswith all exposed pads attached attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditionswith all exposed pads attached attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (f) For a dual device with one active die. (g) For dual device with 2 active die running at equal power. (h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph. (i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm wide tracks and one half of the device active isRth= 250°C/W giving a power rating ofPtot= 500mW. ISSUE 1 - JUNE 2002 2

ZXTDBM832 TYPICAL CHARACTERISTICS 3.5 nt(A) 10 VLiCmE(SiAtTe)d on(W) 23..50 2NoozteCu(e2)(ogz)Cu Tamb=25°C urre 1 DC pati 2.0 Note(a)(f) C 1s si 1ozCu or 100ms Dis 1.5 Note(d)(g) ect 0.1 10ms er 1.0 Coll0.01 NSoitneg(lae)(Pfu)lse,T =25°C 1ms100us Pow 0.5 1NoozteCu(d)(f) IC amb ax 0.0 0.1 1 10 M 0 25 50 75 100 125 150 V Collector-EmitterVoltage(V) Temperature(°C) CE SafeOperatingArea DeratingCurve 225 W) 80 Note(a)(f) W) 200 1ozcopper C/ C/ 175 Note(f) ° ° 1ozcopper ( 60 ( 150 e e Note(g) c c an D=0.5 an 125 st 40 st 100 si si e e R R 75 mal 20 D=0.2 SinglePulse mal 50 2Noozteco(fp)per er D=0.05 er 25 2ozcopper h D=0.1 h Note(g) T 0 T 0 100µ 1m 10m 100m 1 10 100 1k 0.1 1 10 100 PulseWidth(s) BoardCuArea(sqcm) TransientThermalImpedance ThermalResistancevBoardArea 3.5 T =25°C 2ozcopper 3.0 Tamb=150°C Note(g) W) Cjomnaxtinuous 2.5 ( n o 2.0 2ozcopper ati Note(f) p 1.5 si s Di 1.0 1ozcopper PD 0.5 1ozcopper Note(g) Note(f) 0.0 0.1 1 10 100 BoardCuArea(sqcm) PowerDissipationvBoardArea ISSUE 1 - JUNE 2002 3

ZXTDBM832 ELECTRICAL CHARACTERISTICS (atT = 25°C unless otherwise stated). amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown V(BR)CBO 40 100 V IC=100(cid:1)A Voltage Collector-EmitterBreakdown V(BR)CEO 20 27 V IC=10mA* Voltage Emitter-Base BreakdownVoltage V(BR)EBO 7.5 8.2 V IE=100(cid:1)A CollectorCut-OffCurrent ICBO 25 nA VCB=32V EmitterCut-OffCurrent IEBO 25 nA VEB=6V CollectorEmitterCut-OffCurrent ICES 25 nA VCES=16V Collector-EmitterSaturation VCE(sat) 8 15 mV IC=0.1A,IB=10mA* Voltage 90 150 mV IC=1A,IB=10mA* 115 135 mV IC=2A,IB=50mA* 190 250 mV IC=3A,IB=100mA* 210 270 mV IC=4.5A,IB=125mA* Base-EmitterSaturationVoltage VBE(sat) 0.98 1.05 V IC=4.5A,IB=125mA* Base-EmitterTurn-OnVoltage VBE(on) 0.88 0.95 V IC=4.5A,VCE=2V* StaticForwardCurrentTransfer hFE 200 400 IC=10mA,VCE=2V* Ratio 300 450 IC=0.2A,VCE=2V* 200 360 IC=2A,VCE=2V* 100 180 IC=6A,VCE=2V* TransitionFrequency fT 100 140 MHz IC=50mA,VCE=10V f=100MHz OutputCapacitance Cobo 23 30 pF VCB=10V,f=1MHz Turn-OnTime t(on) 170 ns VCC=10V,IC=3A Turn-OffTime t(off) 400 ns IB1=IB2=10mA *Measured under pulsed conditions. Pulse width=300µs. Duty cycle≤2% ISSUE 1 - JUNE 2002 4

ZXTDBM832 TYPICAL CHARACTERISTICS 0.25 Tamb=25°C I/I=50 C B 0.20 100m 100°C V) I/I=100 V) 0.15 ( C B ( 25°C SAT)10m SAT)0.10 E( I/I=50 E( VC C B VC -55°C I/I=10 0.05 C B 1m 0.00 1m 10m 100m 1 10 1m 10m 100m 1 10 I CollectorCurrent(A) I CollectorCurrent(A) C C V vI V vI CE(SAT) C CE(SAT) C 630 1.2 VCE=2V 540 1.0 IC/IB=50 edGain 01..80 100°2C5°C 346500ain(h)FE (V) 0.8 -55°C ormalis 00..46 -55°C 128700ypicalG VBE(SAT) 0.6 25°C 100°C N 0.2 90T 0.4 0.0 0 1m 10m 100m 1 10 1m 10m 100m 1 10 I CollectorCurrent(A) I CollectorCurrent(A) C C h vI V vI FE C BE(SAT) C 1.0 V =2V CE 0.8 V) ( -55°C N) E(O 0.6 VB 25°C 0.4 100°C 1m 10m 100m 1 10 I CollectorCurrent(A) C V vI BE(ON) C ISSUE 1 - JUNE 2002 5

ZXTDBM832 MLP832 PACKAGE OUTLINE(3mm x 2mm Micro Leaded Package) CONTROLLING DIMENSIONS IN MILLIMETRES APPROX. CONVERTED DIMENSIONS IN INCHES MLP832 PACKAGE DIMENSIONS MILLIMETRES INCHES MILLIMETRES INCHES DIM DIM MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. A 0.80 1.00 0.031 0.039 e 0.65REF 0.0256BSC A1 0.00 0.05 0.00 0.002 E 2.00BSC 0.0787 BSC A2 0.65 0.75 0.0255 0.0295 E2 0.43 0.63 0.017 0.0249 A3 0.15 0.25 0.006 0.0098 E4 0.16 0.36 0.006 0.014 b 0.24 0.34 0.009 0.013 L 0.20 0.45 0.0078 0.0157 b1 0.17 0.30 0.0066 0.0118 L2 0.125 0.00 0.005 D 3.00BSC 0.118BSC r 0.075BSC 0.0029BSC D2 0.82 1.02 0.032 0.040 (cid:2) 0(cid:3) 12(cid:3) 0(cid:3) 12(cid:3) D3 1.01 1.21 0.0397 0.0476 ©Zetexplc 2002 Europe Americas Asia Pacific Zetexplc ZetexGmbH ZetexInc Zetex(Asia) Ltd Fields New Road Streitfeldstraße19 700 Veterans Memorial Hwy 3701-04Metroplaza, Tower 1 Chadderton D-81673 München Hauppauge, NY11788 HingFongRoad Oldham, OL9 8NP KwaiFong United Kingdom Germany USA Hong Kong Telephone (44) 161 622 4422 Telefon: (49) 89 45 49 49 0 Telephone: (631) 360 2222 Telephone: (852) 26100 611 Fax: (44) 161 622 4420 Fax: (49) 89 45 49 49 49 Fax: (631) 360 8222 Fax: (852) 24250 494 uksales@zetex.com europe.sales@zetex.com usa.sales@zetex.com asia.sales@zetex.com These offices are supported by agents and distributors in major countries world-wide. Thispublicationisissuedtoprovideoutlineinformationonlywhich(unlessagreedbytheCompanyinwriting)maynotbeused,appliedorreproduced foranypurposeorformpartofanyorderorcontractorberegardedasarepresentationrelatingtotheproductsorservicesconcerned.TheCompany reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Forthelatestproductinformation,logontowww.zetex.com ISSUE 1 - JUNE 2002 6