LinearTM Power IXTH12N100L V = 1000V DSS MOSFET w/ Extended I = 12A D25 FBSOA R ≤≤≤≤≤ 1.3ΩΩΩΩΩ DS(on) N-Channel Enhancement Mode Avalanche Rated TO-247 Symbol Test Conditions Maximum Ratings V T = 25°C to 150°C 1000 V DSS J V T = 25°C to 150°C, R = 1MΩ 1000 V DGR J GS VGSS Continuous ±30 V G V Transient ±40 V D S Tab GSM I T = 25°C 12 A D25 C I T = 25°C, Pulse Width Limited by T 25 A G = Gate D = Drain DM C JM S = Source Tab = Drain I T = 25°C 12 A A C E T = 25°C 1.5 J AS C P T = 25°C 400 W D C T -55...+150 °C J T 150 °C JM Features T -55...+150 °C stg T 1.6mm (0.063 in.) from Case for 10s 300 °C • International Standard Package L • Designed for Linear Operation T Plastic Body for 10s 260 °C SOLD • Avalanche Rated M Mounting Torque 1.13/10 Nm/lb.in. • Molding Epoxy Meets UL94 V-0 d Weight 6 g Flammability Classification Advantages • Easy to Mount • Space Savings • High Power Density Symbol Test Conditions Characteristic Values (T = 25°C, Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = 250μA 1000 V DSS GS D • Programmable Loads V V = V , I = 250μA 3.5 5.5 V GS(th) DS GS D • Current Regulators I V = ±30V, V = 0V ±100 nA • DC-DC Converters GSS GS DS • Battery Chargers I V = V ,V = 0V 50 μA DSS DS DSS GS • DC Choppers T = 125°C 500 μA J • Temperature and Lighting Controls R V = 20V, I = 0.5 • I , Note 1 1.3 Ω DS(on) GS D DSS © 2010 IXYS CORPORATION, All Rights Reserved DS99126B(04/10)

IXTH12N100L Symbol Test Conditions Characteristic Values TO-247 (IXTH) Outline (T = 25°C, Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 0.5 • I , Note 1 3.0 5.0 S fs DS D DSS C 2500 pF iss C V = 0V, V = 25V, f = 1MHz 300 pF ∅ P oss GS DS 1 2 3 C 95 pF rss t 30 ns d(on) Resistive Switching Times t 55 ns r V = 15V, V = 0.5 • V , I = 0.5 • I t GS DS DSS D DSS 110 ns d(off) R = 4.7Ω (External) t G 65 ns e f Terminals: 1 - Gate 2 - Drain Q 155 nC g(on) 3 - Source Q V = 20V, V = 0.5 • V , I = 0.5 • I 35 nC gs GS DS DSS D DSS Dim. Millimeter Inches Q 55 nC Min. Max. Min. Max. gd A 4.7 5.3 .185 .209 R 0.31 °C/W A 2.2 2.54 .087 .102 thJC 1 A 2.2 2.6 .059 .098 R 0.21 °C/W 2 thCS b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 Safe-Operating-Area Specification E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 Symbol Test Conditions Characteristic Values L 19.81 20.32 .780 .800 Min. Typ. Max. L1 4.50 .177 ∅P 3.55 3.65 .140 .144 SOA V = 800V, I = 0.25A, T = 60°C 200 W Q 5.89 6.40 0.232 0.252 DS D C R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25°C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 12 A S GS I Repetitive, Pulse Width Limited by T 48 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS t 1000 ns rr I = I , -di/dt = 100A/μs, V =100V, V = 0V F S R GS Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

IXTH12N100L Fig. 1. Output Characteristics @ T = 25ºC Fig. 2. Extended Output Characteristics @ T = 25ºC J J 12 20 VGS = 20V VGS = 20V 12V 18 12V 10 10V 16 14 s 8 9V 10V pere eres 12 Am 6 mp 10 I - D 8V - AD 8 9V I 4 6 8V 4 2 7V 2 7V 6V 6V 0 0 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 4. R Normalized to I = 6A Value vs. DS(on) D Fig. 3. Output Characteristics @ TJ = 125ºC Junction Temperature 12 3.0 V G S = 1200VV VGS = 20V 10 2.6 9V 8 ed 2.2 I D = 12A z es ali mper 6 8V Norm 1.8 I D = 6A I - AD 4 - DS(on) 1.4 7V R 1.0 2 0.6 6V 5V 0 0.2 0 5 10 15 20 25 30 35 -50 -25 0 25 50 75 100 125 150 VDS - Volts TJ - Degrees Centigrade Fig. 5. R Normalized to I = 6A Value vs. Fig. 6. Maximum Drain Current vs. DS(on) D Drain Current Case Temperature 2.6 12 2.4 VGS = 20V TJ = 125ºC 2.2 10 d ormalize 12..80 mperes 8 - Nn) 1.6 - AD 6 o I RDS( 1.4 TJ = 25ºC 4 1.2 2 1.0 0.8 0 0 2 4 6 8 10 12 14 16 18 20 -50 -25 0 25 50 75 100 125 150 ID - Amperes TC - Degrees Centigrade © 2010 IXYS CORPORATION, All Rights Reserved

IXTH12N100L Fig. 7. Input Admittance Fig. 8. Transconductance 16 10 14 9 TJ = - 40ºC 8 12 7 25ºC eres 10 TJ = 125ºC mens 6 125ºC I - AmpD 68 - 2450ººCC g - Sief s 45 3 4 2 2 1 0 0 3.5 4.5 5.5 6.5 7.5 8.5 9.5 10.5 0 2 4 6 8 10 12 14 16 VGS - Volts ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 36 20 32 18 VDS = 500V I D = 6A 28 16 I G = 10mA 14 24 eres 20 olts12 p V - AmS 16 V - GS108 I 12 TJ = 125ºC 6 8 TJ = 25ºC 4 4 2 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 20 40 60 80 100 120 140 160 VSD - Volts QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Maximum Transient Thermal Impedance 1 10,000 f = 1 MHz s ad Ciss ar 1,000 F o Pic W e - C / 0.1 apacitanc 100 Coss Z - º(th)JC C Crss 10 0.01 0 5 10 15 20 25 30 35 40 0.0001 0.001 0.01 0.1 1 VDS - Volts Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTH12N100L Fig. 13. Forward-Bias Safe Operating Area Fig. 14. Forward-Bias Safe Operating Area @ T = 25ºC @ T = 60ºC C C 100 100 RDS(on) Limit RDS(on) Limit 25µs 25µs 10 100µs 10 100µs s s e e er er p p m m A 1ms A - D - D 1ms I I 1 1 10ms 10ms DC TJ = 150ºC TJ = 150ºC TC = 25ºC TC = 60ºC DC Single Pulse Single Pulse 0.1 0.1 10 100 1,000 10,000 10 100 1,000 10,000 VDS - Volts VDS - Volts © 2010 IXYS CORPORATION, All Rights Reserved IXYS REF: T_12N100L(7N)4-19-10-A

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