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BUK9Y7R6-40E,115产品简介:

ICGOO电子元器件商城为您提供BUK9Y7R6-40E,115由NXP Semiconductors设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 BUK9Y7R6-40E,115价格参考。NXP SemiconductorsBUK9Y7R6-40E,115封装/规格:晶体管 - FET,MOSFET - 单, 表面贴装 N 沟道 40V 79A(Tc) 95W(Tc) LFPAK56,Power-SO8。您可以下载BUK9Y7R6-40E,115参考资料、Datasheet数据手册功能说明书,资料中有BUK9Y7R6-40E,115 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

MOSFET N-CH 40V LFPAK

产品分类

FET - 单

FET功能

逻辑电平门

FET类型

MOSFET N 通道,金属氧化物

品牌

NXP Semiconductors

数据手册

点击此处下载产品Datasheet

产品图片

产品型号

BUK9Y7R6-40E,115

rohs

无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

-

不同Id时的Vgs(th)(最大值)

2.1V @ 1mA

不同Vds时的输入电容(Ciss)

2403pF @ 25V

不同Vgs时的栅极电荷(Qg)

16.4nC @ 5V

不同 Id、Vgs时的 RdsOn(最大值)

6 毫欧 @ 20A,10V

供应商器件封装

LFPAK56, Power-SO8

其它名称

568-10281-1

功率-最大值

95W

包装

剪切带 (CT)

安装类型

表面贴装

封装/外壳

SC-100,SOT-669,4-LFPAK

标准包装

1

漏源极电压(Vdss)

40V

电流-连续漏极(Id)(25°C时)

79A (Tmb)

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PDF Datasheet 数据手册内容提取

BUK9Y7R6-40E N-channel 40 V, 7.6 mΩ logic level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True logic level gate with V rating of greater than 0.5 V at 175 °C GS(th) 3. Applications • 12 V Automotive systems • Motors, lamps and solenoid control • Transmission control • Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T ≥ 25 °C; T ≤ 175 °C - - 40 V DS j j I drain current V = 5 V; T = 25 °C; Fig. 1 - - 79 A D GS mb P total power dissipation T = 25 °C; Fig. 2 - - 95 W tot mb Static characteristics R drain-source on-state V = 5 V; I = 20 A; T = 25 °C; Fig. 11 - 6.4 7.6 mΩ DSon GS D j resistance Dynamic characteristics Q gate-drain charge V = 5 V; I = 20 A; V = 32 V; - 5.5 - nC GD GS D DS T = 25 °C; Fig. 13; Fig. 14 j

Nexperia BUK9Y7R6-40E N-channel 40 V, 7.6 mΩ logic level MOSFET in LFPAK56 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source mb D 2 S source G 3 S source 4 G gate mbb076 S 1 2 3 4 mb D mounting base; connected to LFPAK56; Power- drain SO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9Y7R6-40E LFPAK56; Plastic single-ended surface-mounted package (LFPAK56; SOT669 Power-SO8 Power-SO8); 4 leads 7. Marking Table 4. Marking codes Type number Marking code BUK9Y7R6-40E 97E640 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T ≥ 25 °C; T ≤ 175 °C - 40 V DS j j V drain-gate voltage R = 20 kΩ - 40 V DGR GS V gate-source voltage T ≤ 175 °C; DC -10 10 V GS j Tj ≤ 175 °C; Pulsed [1][2] -15 15 V I drain current T = 25 °C; V = 5 V; Fig. 1 - 79 A D mb GS T = 100 °C; V = 5 V; Fig. 1 - 56 A mb GS I peak drain current T = 25 °C; pulsed; t ≤ 10 µs; Fig. 4 - 315 A DM mb p P total power dissipation T = 25 °C; Fig. 2 - 95 W tot mb BUK9Y7R6-40E All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 7 May 2013 2 / 13

Nexperia BUK9Y7R6-40E N-channel 40 V, 7.6 mΩ logic level MOSFET in LFPAK56 Symbol Parameter Conditions Min Max Unit T storage temperature -55 175 °C stg T junction temperature -55 175 °C j Source-drain diode I source current T = 25 °C - 79 A S mb I peak source current pulsed; t ≤ 10 µs; T = 25 °C - 315 A SM p mb Avalanche ruggedness EDS(AL)S non-repetitive drain-source ID = 79 A; Vsup ≤ 40 V; RGS = 50 Ω; [3][4] - 43 mJ avalanche energy V = 5 V; T = 25 °C; unclamped; GS j(init) Fig. 3 [1] Accumulated pulse duration up to 50 hours delivers zero defect ppm [2] Significantly longer life times are achieved by lowering Tj and or VGS [3] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. [4] Refer to application note AN10273 for further information. 003aaj230 03aa16 80 120 IIDD ((AA)) Pder (%) 60 80 40 40 20 0 0 0 30 60 90 120 150 180 0 50 100 150 200 Tj (°C) Tmb(°C) Fig. 1. Continuous drain current as a function of Fig. 2. Normalized total power dissipation as a mounting base temperature function of mounting base temperature BUK9Y7R6-40E All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 7 May 2013 3 / 13

Nexperia BUK9Y7R6-40E N-channel 40 V, 7.6 mΩ logic level MOSFET in LFPAK56 102 003aaj231 IIAALL ((AA)) ((11)) 10 ((22)) 1 ((33)) 10-1 10-3 10-2 10-1 1 10 tAL (ms) Fig. 3. Avalanche rating; avalanche current as a function of avalanche time 103 003aaj232 IIDD ((AA)) LLiimmiitt RRDDSSoonn == VVDDSS // IIDD 102 ttpp == 1100 uuss 110000 uuss 10 DDCC 11 mmss 1 1100 mmss 110000 mmss 10-1 10-1 1 10 102 VDS (V) Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance Fig. 5 - - 1.58 K/W th(j-mb) from junction to mounting base BUK9Y7R6-40E All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 7 May 2013 4 / 13

Nexperia BUK9Y7R6-40E N-channel 40 V, 7.6 mΩ logic level MOSFET in LFPAK56 003aai733 10 ZZtthh((jj--mmbb)) ((KK//WW)) 1 δδ == 00..55 00..22 00..11 10-1 00..0055 P δ = tp T 00..0022 ssiinnggllee sshhoott tp t T 10-2 10-6 10-5 10-4 10-3 10-2 10-1 1 tp (s) Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V drain-source I = 250 µA; V = 0 V; T = 25 °C 40 - - V (BR)DSS D GS j breakdown voltage I = 250 µA; V = 0 V; T = -55 °C 36 - - V D GS j V gate-source threshold I = 1 mA; V = V ; T = 25 °C; 1.4 1.7 2.1 V GS(th) D DS GS j voltage Fig. 9; Fig. 10 I = 1 mA; V = V ; T = -55 °C; - - 2.45 V D DS GS j Fig. 9 I = 1 mA; V = V ; T = 175 °C; 0.5 - - V D DS GS j Fig. 9 I drain leakage current V = 40 V; V = 0 V; T = 25 °C - 0.04 1 µA DSS DS GS j V = 40 V; V = 0 V; T = 175 °C - - 500 µA DS GS j I gate leakage current V = 10 V; V = 0 V; T = 25 °C - 2 100 nA GSS GS DS j V = -10 V; V = 0 V; T = 25 °C - 2 100 nA GS DS j R drain-source on-state V = 5 V; I = 20 A; T = 25 °C; Fig. 11 - 6.4 7.6 mΩ DSon GS D j resistance V = 10 V; I = 20 A; T = 25 °C; - 5.3 6 mΩ GS D j Fig. 11 V = 5 V; I = 20 A; T = 175 °C; - - 15.28 mΩ GS D j Fig. 11; Fig. 12 Dynamic characteristics Q total gate charge I = 20 A; V = 32 V; V = 5 V; - 16.4 - nC G(tot) D DS GS T = 25 °C; Fig. 13; Fig. 14 Q gate-source charge j - 5.1 - nC GS BUK9Y7R6-40E All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 7 May 2013 5 / 13

Nexperia BUK9Y7R6-40E N-channel 40 V, 7.6 mΩ logic level MOSFET in LFPAK56 Symbol Parameter Conditions Min Typ Max Unit Q gate-drain charge - 5.5 - nC GD C input capacitance V = 0 V; V = 25 V; f = 1 MHz; - 1807 2403 pF iss GS DS T = 25 °C; Fig. 15 C output capacitance j - 260 312 pF oss C reverse transfer - 126 173 pF rss capacitance t turn-on delay time V = 30 V; R = 1.5 Ω; V = 5 V; - 11.3 - ns d(on) DS L GS R = 5 Ω; T = 25 °C t rise time G(ext) j - 20.9 - ns r t turn-off delay time - 22.7 - ns d(off) t fall time - 16.6 - ns f Source-drain diode V source-drain voltage I = 20 A; V = 0 V; T = 25 °C; Fig. 16 - 0.84 1.2 V SD S GS j t reverse recovery time I = 20 A; dI /dt = -100 A/µs; V = 0 V; - 17 - ns rr S S GS V = 25 V; T = 25 °C Q recovered charge DS j - 8.1 - nC r 003aaj234 003aaj235 250 30 IIDD 1100 VV RRDDSSoonn ((AA)) 25 200 44..55 VV 20 150 15 33..55 VV 100 10 VVGGSS == 33 VV 50 22..88 VV 5 22..44 VV 0 0 0 0.5 1 1.5 2 2.5 3 0 2 4 6 8 10 12 14 16 VDS (V) VGS (V) T = 25 °C; t = 300 μs j p Fig. 7. Drain-source on-state resistance as a function Fig. 6. Output characteristics; drain current as a of gate-source voltage; typical values function of drain-source voltage; typical values BUK9Y7R6-40E All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 7 May 2013 6 / 13

Nexperia BUK9Y7R6-40E N-channel 40 V, 7.6 mΩ logic level MOSFET in LFPAK56 003aaj237 003aah025 80 3 IIDD VGS(th) ((AA)) (V) 2.5 60 max 2 typ 40 1.5 min 1 20 0.5 117755°°CC TTjj == 2255°°CC 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 -60 0 60 120 180 VGS (V) Tj(°C) Fig. 8. Transfer characteristics; drain current as a Fig. 9. Gate-source threshold voltage as a function of function of gate-source voltage; typical values junction temperature 10-1 003aah026 50 003aaj240 ID RRDDSSoonn 22..66 VV 22..88 VV 33 VV (A) 10-2 40 33..55 VV 10-3 min typ max 30 10-4 20 10-5 10 44..55 VV VVGGSS == 1100 VV 10-6 0 0 1 2 3 0 20 40 60 80 100 VGS(V) ID (A) T = 25 °C; t = 300 μs Fig. 10. Sub-threshold drain current as a function of j p gate-source voltage Fig. 11. Drain-source on-state resistance as a function of drain current; typical values BUK9Y7R6-40E All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 7 May 2013 7 / 13

Nexperia BUK9Y7R6-40E N-channel 40 V, 7.6 mΩ logic level MOSFET in LFPAK56 003aaj814 2.4 VDS a ID 1.6 VGS(pl) VGS(th) VGS 0.8 QGS1 QGS2 QGS QGD QG(tot) 003aaa508 0 -60 0 60 120 180 Fig. 13. Gate charge waveform definitions Tj(°C) Fig. 12. Normalized drain-source on-state resistance factor as a function of junction temperature 10 003aaj242 104 003aaj243 VVGGSS CC ((VV)) ((ppFF)) 8 CCiissss 6 VVGGSS == 1144 VV 103 3322 VV 4 CCoossss 2 CCrrssss 0 102 0 5 10 15 20 25 30 35 40 10-1 1 10 102 QG (nC) VDS (V) Fig. 14. Gate-source voltage as a function of gate Fig. 15. Input, output and reverse transfer capacitances charge; typical values as a function of drain-source voltage; typical values BUK9Y7R6-40E All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 7 May 2013 8 / 13

Nexperia BUK9Y7R6-40E N-channel 40 V, 7.6 mΩ logic level MOSFET in LFPAK56 003aaj244 300 IISS ((AA)) 240 180 120 60 117755°°CC TTjj == 2255°°CC 0 0 0.3 0.6 0.9 1.2 1.5 1.8 VSD (V) Fig. 16. Source-drain (diode forward) current as a function of source-drain (diode forward) voltage; typical values BUK9Y7R6-40E All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 7 May 2013 9 / 13

Nexperia BUK9Y7R6-40E N-channel 40 V, 7.6 mΩ logic level MOSFET in LFPAK56 11. Package outline Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads SOT669 E A A2 C b2 c2 E1 L1 b3 mounting base b4 D1 H D L2 1 2 3 4 X e b w A c 1/2 e A (A3) A1 C q L detail X y C 0 5 mm θ scale 8° 0° Dimensions (mm are the original dimensions) Unit(1) A A1 A2 A3 b b2 b3 b4 c c2 D(1) D1(1) E(1) E1(1) e H L L1 L2 w y max 1.20 0.15 1.10 0.50 4.41 2.2 0.9 0.25 0.30 4.10 4.20 5.0 3.3 6.2 0.85 1.3 1.3 mm nom 0.25 1.27 0.25 0.1 min 1.01 0.00 0.95 0.35 3.62 2.0 0.7 0.19 0.24 3.80 4.8 3.1 5.8 0.40 0.8 0.8 Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. sot669_po Outline References European Issue date version IEC JEDEC JEITA projection 11-03-25 SOT669 MO-235 13-02-27 Fig. 17. Package outline LFPAK56; Power-SO8 (SOT669) BUK9Y7R6-40E All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 7 May 2013 10 / 13

Nexperia BUK9Y7R6-40E N-channel 40 V, 7.6 mΩ logic level MOSFET in LFPAK56 In no event shall Nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - 12. Legal information lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 12.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, Nexperia’s aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance Document Product Definition with the Terms and conditions of commercial sale of Nexperia. status [1][2] status [3] Objective Development This document contains data from Right to make changes — Nexperia reserves the right to [short] data the objective specification for product make changes to information published in this document, including without sheet development. limitation specifications and product descriptions, at any time and without Preliminary Qualification This document contains data from the notice. This document supersedes and replaces all information supplied prior [short] data preliminary specification. to the publication hereof. sheet Suitability for use in automotive applications — This Nexperia Product Production This document contains the product product has been qualified for use in automotive [short] data specification. applications. Unless otherwise agreed in writing, the product is not designed, sheet authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or [1] Please consult the most recently issued document before initiating or malfunction of a Nexperia product can reasonably be expected completing a design. to result in personal injury, death or severe property or environmental [2] The term 'short data sheet' is explained in section "Definitions". damage. Nexperia and its suppliers accept no liability for [3] The product status of device(s) described in this document may have inclusion and/or use of Nexperia products in such equipment or changed since this document was published and may differ in case of applications and therefore such inclusion and/or use is at the customer's own multiple devices. The latest product status information is available on risk. the Internet at URL http://www.nexperia.com. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 12.2 Definitions Applications — Applications that are described herein for any of these Preview — The document is a preview version only. The document is still products are for illustrative purposes only. Nexperia makes no subject to formal approval, which may result in modifications or additions. representation or warranty that such applications will be suitable for the Nexperia does not give any representations or warranties as to specified use without further testing or modification. the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Customers are responsible for the design and operation of their applications and products using Nexperia products, and Nexperia Draft — The document is a draft version only. The content is still under accepts no liability for any assistance with applications or internal review and subject to formal approval, which may result in customer product design. It is customer’s sole responsibility to determine modifications or additions. Nexperia does not give any whether the Nexperia product is suitable and fit for the representations or warranties as to the accuracy or completeness of customer’s applications and products planned, as well as for the planned information included herein and shall have no liability for the consequences application and use of customer’s third party customer(s). Customers should of use of such information. provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is Nexperia does not accept any liability related to any default, intended for quick reference only and should not be relied upon to contain damage, costs or problem which is based on any weakness or default detailed and full information. For detailed and full information see the in the customer’s applications or products, or the application or use by relevant full data sheet, which is available on request via the local Nexperia customer’s third party customer(s). Customer is responsible for doing all sales office. In case of any inconsistency or conflict with the necessary testing for the customer’s applications and products using Nexperia short data sheet, the full data sheet shall prevail. products in order to avoid a default of the applications and the products or of the application or use by customer’s third party Product specification — The information and data provided in a Product customer(s). Nexperia does not accept any liability in this respect. data sheet shall define the specification of the product as agreed between Nexperia and its customer, unless Nexperia and Limiting values — Stress above one or more limiting values (as defined in customer have explicitly agreed otherwise in writing. In no event however, the Absolute Maximum Ratings System of IEC 60134) will cause permanent shall an agreement be valid in which the Nexperia product damage to the device. Limiting values are stress ratings only and (proper) is deemed to offer functions and qualities beyond those described in the operation of the device at these or any other conditions above those Product data sheet. given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. 12.3 Disclaimers Terms and conditions of commercial sale — Nexperia Limited warranty and liability — Information in this document is believed products are sold subject to the general terms and conditions of commercial to be accurate and reliable. However, Nexperia does not give sale, as published at http://www.nexperia.com/profile/terms, unless otherwise any representations or warranties, expressed or implied, as to the accuracy agreed in a valid written individual agreement. In case an individual or completeness of such information and shall have no liability for the agreement is concluded only the terms and conditions of the respective consequences of use of such information. Nexperia takes no agreement shall apply. Nexperia hereby expressly objects to responsibility for the content in this document if provided by an information applying the customer’s general terms and conditions with regard to the source outside of Nexperia. purchase of Nexperia products by customer. BUK9Y7R6-40E All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 7 May 2013 11 / 13

Nexperia BUK9Y7R6-40E N-channel 40 V, 7.6 mΩ logic level MOSFET in LFPAK56 No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. BUK9Y7R6-40E All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 7 May 2013 12 / 13

Nexperia BUK9Y7R6-40E N-channel 40 V, 7.6 mΩ logic level MOSFET in LFPAK56 13. Contents 1 General description ...............................................1 2 Features and benefits ............................................1 3 Applications ...........................................................1 4 Quick reference data .............................................1 5 Pinning information ...............................................2 6 Ordering information .............................................2 7 Marking ...................................................................2 8 Limiting values .......................................................2 9 Thermal characteristics .........................................4 10 Characteristics .......................................................5 11 Package outline ...................................................10 12 Legal information .................................................11 12.1 Data sheet status ...............................................11 12.2 Definitions ...........................................................11 12.3 Disclaimers .........................................................11 12.4 Trademarks ........................................................12 © Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 07 May 2013 BUK9Y7R6-40E All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 7 May 2013 13 / 13