MJH11017, MJH11019, MJH11021(cid:2)(PNP) MJH11018, MJH11020, MJH11022(cid:2)(NPN) Complementary Darlington Silicon Power Transistors www.onsemi.com These devices are designed for use as general purpose amplifiers, 15 AMPERE DARLINGTON low frequency switching and motor control applications. COMPLEMENTARY SILICON Features POWER TRANSISTORS • High DC Current Gain @ 10 Adc — hFE = 400 Min (All Types) 150−250 VOLTS, 150 WATTS • Collector−Emitter Sustaining Voltage V = 150 Vdc (Min) — MJH11018, 17 CEO(sus) NPN PNP = 200 Vdc (Min) — MJH11020, 19 COLLECTOR 2 COLLECTOR 2 = 250 Vdc (Min) — MJH11022, 21 • Low Collector−Emitter Saturation Voltage V = 1.2 V (Typ) @ I = 5.0 A BASE BASE CE(sat) C 1 1 = 1.8 V (Typ) @ I = 10 A C • Monolithic Construction • These are Pb−Free Devices EMITTER 3 EMITTER 3 MJH11018 MJH11017 MJH11020 MJH11019 MAXIMUM RATINGS MJH11022 MJH11021 Rating Symbol Max Unit Collector−Emitter Voltage VCEO Vdc MJH11018, MJH11017 150 MJH11020, MJH11019 200 MJH11022, MJH11021 250 SOT−93 (TO−218) Collector−Base Voltage VCB Vdc CASE 340D MJH11018, MJH11017 150 STYLE 1 MJH11020, MJH11019 200 MJH11022, MJH11021 250 1 2 Emitter−Base Voltage VEB 5.0 Vdc 3 Collector Current − Continuous IC 15 Adc − Peak (Note 1) 30 TO−247 CASE 340L Base Current IB 0.5 Adc STYLE 3 Total Device Dissipation @ TC = 25(cid:2)C PD 150 W Derate above 25(cid:2)C 1.2 W/(cid:2)C Operating and Storage Junction Temperature TJ, Tstg –(cid:2)65 to (cid:2)C Range +(cid:2)150 NOTE: Effective June 2012 this device will THERMAL CHARACTERISTICS be available only in the TO−247 package. Reference FPCN# 16827. Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case R(cid:2)JC 0.83 (cid:2)C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. See detailed ordering and shipping information in the package 1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle (cid:2) 10%. dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: August, 2016 − Rev. 10 MJH11017/D

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) MARKING DIAGRAMS TO−247 TO−218 MJH110xx AYWWG AYWWG MJH110xx 1 BASE 3 EMITTER 1 BASE 3 EMITTER 2 COLLECTOR 2 COLLECTOR A =Assembly Location Y =Year WW =Work Week G =Pb−Free Package MJH110xx =Device Code xx = 17, 19, 21, 18, 20, 22 ORDERING INFORMATION Device Order Number Package Type Shipping MJH11017G TO−218 30 Units / Rail (Pb−Free) MJH11018G TO−218 30 Units / Rail (Pb−Free) MJH11019G TO−218 30 Units / Rail (Pb−Free) MJH11020G TO−218 30 Units / Rail (Pb−Free) MJH11021G TO−218 30 Units / Rail (Pb−Free) MJH11022G TO−218 30 Units / Rail (Pb−Free) MJH11017G TO−247 30 Units / Rail (Pb−Free) MJH11018G TO−247 30 Units / Rail (Pb−Free) MJH11019G TO−247 30 Units / Rail (Pb−Free) MJH11020G TO−247 30 Units / Rail (Pb−Free) MJH11021G TO−247 30 Units / Rail (Pb−Free) MJH11022G TO−247 30 Units / Rail (Pb−Free) www.onsemi.com 2

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) 160 140 S) T AT 120 W N ( 100 O TI A P 80 SI S DI 60 R E W O 40 P P, D 20 0 0 20 40 60 80 100 120 140 160 TC, CASE TEMPERATURE (°C) Figure 1. Power Derating ÎÎÎÎELEÎÎCTÎÎRICÎÎAL ÎÎCHAÎÎRAÎÎCTEÎÎRISÎÎTICÎÎS (TÎÎC =ÎÎ 25(cid:2)ÎÎC unÎÎlessÎÎ otheÎÎrwisÎÎe noÎÎted)ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic Symbol Min Max Unit ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ OFF CHARACTERISTICS ÎÎColÎlectoÎr−EmÎitteÎr SusÎtainÎing VÎoltaÎge (NÎoteÎ 2) ÎÎÎÎÎÎÎÎÎÎÎÎVÎCEO(Îsus)ÎÎÎÎÎÎÎÎÎÎVdcÎ ÎÎÎ(IC =Î 0.1 ÎAdc,Î IB =Î 0) ÎÎÎÎÎÎÎÎÎÎMJÎH11Î017,Î MJHÎ110Î18 ÎÎÎÎÎÎÎ150ÎÎÎ−ÎÎÎÎÎ MJH11019, MJH11020 200 − ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMJÎÎH11ÎÎ021,ÎÎ MJHÎÎ110ÎÎ22 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ250ÎÎÎÎÎÎ−ÎÎÎÎÎÎÎÎÎÎ ÎÎColÎlectoÎr CuÎtoff CÎurreÎnt ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎICEÎO ÎÎÎÎÎÎÎÎÎmÎAdcÎ (VCE = 75 Vdc, IB = 0) MJH11017, MJH11018 − 1.0 ÎÎÎ(VCEÎ = 10Î0 VÎdc, IÎB = 0Î) ÎÎÎÎÎÎÎÎÎMJÎH11Î019,Î MJHÎ110Î20 ÎÎÎÎÎÎÎ−ÎÎÎ1.Î0 ÎÎÎÎ ÎÎÎÎÎÎ(VCEÎÎ = 12ÎÎ5 VÎÎdc, IÎÎB = 0ÎÎ) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMJÎÎH11ÎÎ021,ÎÎ MJHÎÎ110ÎÎ22 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ−ÎÎÎÎÎÎ1.ÎÎ0 ÎÎÎÎÎÎÎÎ ÎÎColÎlectoÎr CuÎtoff CÎurreÎnt ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎICEÎV ÎÎÎÎÎÎÎÎÎmÎAdcÎ (VCE = Rated VCB, VBE(off) = 1.5 Vdc) − 0.5 ÎÎÎÎÎÎ(VCEÎÎ = RÎÎatedÎÎ VCBÎÎ, VBÎÎE(off)ÎÎ = 1.ÎÎ5 VdÎÎc, TÎÎJ = 1ÎÎ50(cid:2)ÎÎC) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ−ÎÎÎÎÎÎ5.ÎÎ0 ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter Cutoff Current (VBE = 5.0 Vdc IC = 0) IEBO − 2.0 mAdc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ON CHARACTERISTICS (Note 2) ÎÎDC ÎCurrÎent GÎainÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎhFEÎÎÎÎÎÎÎÎÎÎÎ− Î ÎÎÎ(IC =Î 10 AÎdc, ÎVCEÎ = 5.Î0 VdÎc) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ400ÎÎÎ15,0Î00ÎÎÎÎ (IC = 15 Adc, VCE = 5.0 Vdc) 100 − ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Emitter Saturation Voltage VCE(sat) Vdc ÎÎÎ(IC =Î 10 AÎdc, ÎIB = Î100Î mA)ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ−ÎÎÎ2.Î5 ÎÎÎÎ (IC = 15 Adc, IB = 150 mA) − 4.0 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base−Emitter On Voltage (IC = 10 A, VCE = 5.0 Vdc) VBE(on) − 2.8 Vdc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base−Emitter Saturation Voltage (IC = 15 Adc, IB = 150 mA) VBE(sat) − 3.8 Vdc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DYNAMIC CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Current−Gain Bandwidth Product (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) fT 3.0 − − ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Output Capacitance MJH11018, MJH11020, MJH11022 Cob − 400 pF ÎÎÎÎÎÎ(VCBÎÎ = 10ÎÎ VdÎÎc, IEÎÎ = 0,ÎÎ f = 0ÎÎ.1 MÎÎHz)ÎÎÎÎÎÎÎÎMÎÎJH1ÎÎ1017ÎÎ, MJÎÎH11ÎÎ019,ÎÎ MJHÎÎ110ÎÎ21 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ−ÎÎÎÎÎÎ60ÎÎ0 ÎÎÎÎÎÎÎÎ ÎÎÎÎSmÎÎall−SÎÎignaÎÎl CuÎÎrrentÎÎ GaiÎÎn (ICÎÎ = 1ÎÎ0 AdÎÎc, VCÎÎE =ÎÎ 3.0 ÎÎVdc,ÎÎ f = 1ÎÎ.0 kÎÎHz)ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎhfeÎÎÎÎÎÎÎ75ÎÎÎÎÎ−ÎÎÎÎÎÎÎ− ÎÎ ÎÎÎÎSWIÎÎTCHÎÎINGÎÎ CHÎÎARAÎÎCTEÎÎRISÎÎTICSÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTÎÎÎypiÎÎcal ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCÎÎÎharaÎÎcterÎÎisticÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSÎÎymbÎÎol ÎÎÎÎÎÎNPNÎÎÎÎÎÎPNÎÎP ÎÎÎÎÎÎUnitÎÎ ÎÎÎÎDelÎÎay TiÎÎmeÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎtdÎÎÎÎÎÎÎÎ150ÎÎÎÎÎÎ7ÎÎ5 ÎÎÎÎÎÎnsÎÎ ÎÎÎÎRiseÎÎ TimÎÎe ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCÎC = 1Î00 VÎ, IC Î= 10Î A, IÎB = 1Î00 mÎA ÎÎÎÎÎÎtrÎÎÎÎÎÎÎÎ1.2ÎÎÎÎÎÎ0.ÎÎ5 ÎÎÎÎÎÎ(cid:3)sÎÎ ÎÎÎÎStoÎÎrageÎÎ TimÎÎe ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVÎBE(oÎff) =Î 5.0 ÎV) (SÎee FÎigurÎe 2)ÎÎÎÎÎÎÎtsÎÎÎÎÎÎÎÎ4.4ÎÎÎÎÎÎ2.ÎÎ7 ÎÎÎÎÎÎ(cid:3)sÎÎ ÎÎFallÎ TimÎe ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎtfÎÎÎÎ2.5ÎÎÎ2.Î5 ÎÎÎ(cid:3)sÎ 2. Pulse Test: Pulse Width = 300 (cid:3)s, Duty Cycle (cid:2) 2.0%. www.onsemi.com 3

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) VCC -100 V RC SCOPE TUT RB & RC varied to obtain desired current levels V2 RB D1, must be fast recovery types, e.g.: APPROX 1N5825 used above IB ≈ 100 mA +12 V MSD6100 used below IB ≈ 100 mA 0 51 D1 V1 APPROX +(cid:2)4.0 V -(cid:2)8.0 V 25 (cid:3)s For td and tr, D1 is disconnected and V2 = 0 tr, tf ≤ 10 ns Duty Cycle = 1.0% For NPN test circuit, reverse diode and voltage polarities. Figure 2. Switching Times Test Circuit 1.0 0.7 L D = 0.5 MA 0.5 ERD) THZE 0.3 0.2 NT ALI 0.2 EM 0.1 ANSINOR 0.1 0.05 R(cid:2)JC(t) = r(t) R(cid:2)JC P(pk) r(t), EFFECTIVE TRRESISTANCE (0000....00007352 S0.I0N2GLE PULSE 0.01 RTDPRJU E(cid:2)C(JpLACUkSD) R=E- T V 0TTIEM.CR8S E3A= °A I ACNPPT/( PpWS tkL1H) Y MOR FA(cid:2)WOJXCNR(t )POWER DUTtY1 CtY2CLE, D = t1/t2 0.01 0.01 0.020.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 t, TIME (ms) Figure 3. Thermal Response FORWARD BIAS S) TC = 25°C SINGLE PULSE There are two limitations on the power handling ability of P AM3200 0.1 ms a transistor: average junction temperature and second NT ( breakdown. Safe operating area curves indicate IC − VCE E10 0.5 ms R limits of the transistor that must be observed for reliable R CU5.0 1.0 ms operation; i.e., the transistor must not be subjected to greater OR 5.0 ms dissipation than the curves indicate. T2.0 dc EC WIRE BOND LIMIT The data of Figure 4 is based on TJ(pk) = 150(cid:2)C; TC is OLL1.0 THERMAL LIMIT variable depending on conditions. Second breakdown pulse I, CC00..52 SECOND BREAKDOWMMNJJ HHL11IM1100IT1179,, MMJJHH1111001280 l(cid:2)im 1it5s0 a(cid:2)rCe. vTalJi(dp kf)o rm dauyt yb ec yccalelcsu tloa te1d0 %fr opmro vtihdee dd aTtaJ( pikn) MJH11021, MJH11022 Figure 3. At high case temperatures, thermal limitations will 0 2.0 3.0 5.0 10 20 30 50 100150 250 reduce the power that can be handled to values less than the VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) limitations imposed by second breakdown. Figure 4. Maximum Rated Forward Bias Safe Operating Area (FBSOA) www.onsemi.com 4

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) REVERSE BIAS 30 For inductive loads, high voltage and high current must be PS) L = 200 (cid:3)H sustained simultaneously during turn−off, in most cases, NT (AM 20 ITCC/I B=1 1 ≥0 05°0C wcointhd itthieo nbsa sthe et oc oelmleicttteorr jvuonlcttaigoen mreuvsetr sbee bhiealsde dto. Ua nsdaefer tlheevseel RE VBE(off) = 0(cid:2)-(cid:2)5.0 V at or below a specific value of collector current. This can be CUR RBE = 47 (cid:4) accomplished by several means such as active clamping, RC R DUTY CYCLE = 10% O snubbing, load line shaping, etc. The safe level for these T EC 10 devices is specified as Reverse Bias Safe Operating Area L OL MJH11017, MJH11018 and represents the voltage−current conditions during C , C MJH11019, MJH11020 reverse biased turn−off. This rating is verified under I MJH11021, MJH11022 clamped conditions so that the device is never subjected to an avalanche mode. Figure 5 gives RBSOA characteristics. 0 0 20 60 100 140 180 220 260 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. Maximum Rated Reverse Bias Safe Operating Area (RBSOA) PNP NPN 10,000 10,000 7000 VCE = 5.0 V VCE = 5.0 V 5000 5000 AIN 3000 AIN TC = 150°C T G 2000 TC = 150°C T G 2000 N N E E URR 1000 25°C URR 1000 25°C C C C C D 500 D 500 , FE , FE -(cid:2)55°C h h 200 -(cid:2)55°C 200 100 100 0.2 0.3 0.5 0.7 1.0 3.0 5.0 10 15 0.2 0.3 0.5 0.7 1.0 3.0 5.0 7.0 10 15 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 6. DC Current Gain www.onsemi.com 5

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) PNP NPN S) 4.5 S) 4.5 T T L L E (VO 4.0 TJ = 25°C E (VO 4.0 TJ = 25°C G G LTA 3.5 LTA 3.5 O O V V R 3.0 R E E 3.0 T T EMIT 2.5 EMIT 2.5 IC = 15 A - - OR IC = 15 A OR CT 2.0 CT 2.0 LE LE IC = 10 A OL 1.5 IC = 10 A OL 1.5 C C V, CE 1.0 IC = 5.0 A V, CE 1.0 IC = 5.0 A 1.0 2.03.0 5.0 10 20 30 50 100 200300 500 1000 1.0 2.03.0 5.0 10 20 30 50 100 200300 500 1000 IB, BASE CURRENT (mA) IB, BASE CURRENT (mA) Figure 7. Collector Saturation Region PNP NPN 4.0 4.0 3.5 TJ = 25°C 3.5 TJ = 25°C 3.0 3.0 S) S) T T OL 2.5 OL 2.5 V V E ( E ( G 2.0 VBE(sat) @ IC/IB = 100 G 2.0 VBE(sat) @ IC/IB = 100 A A T T L L O O V 1.5 V 1.5 1.0 VBE @ VCE = 5.0 V 1.0 VBE @ VCE = 5.0 V VCE(sat) @ IC/IB = 100 VCE(sat) @ IC/IB = 100 0.5 0.5 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 0.2 0.5 0.7 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 8. “On” Voltages PNP NPN MJH11017 COLLECTOR MJH11018 COLLECTOR MJH11019 MJH11020 MJH11021 MJH11022 BASE BASE EMITTER EMITTER Figure 9. Darlington Schematic www.onsemi.com 6

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) PACKAGE DIMENSIONS SOT−93 (TO−218) CASE 340D−02 ISSUE E C NOTES: 1.DIMENSIONING AND TOLERANCING PER ANSI B Q E Y14.5M, 1982. 2.CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS INCHES DIM MIN MAX MIN MAX U 4 A --- 20.35 --- 0.801 A B 14.70 15.20 0.579 0.598 S L C 4.70 4.90 0.185 0.193 D 1.10 1.30 0.043 0.051 E 1.17 1.37 0.046 0.054 K 1 2 3 G 5.40 5.55 0.213 0.219 H 2.00 3.00 0.079 0.118 J 0.50 0.78 0.020 0.031 K 31.00 REF 1.220 REF L --- 16.20 --- 0.638 Q 4.00 4.10 0.158 0.161 S 17.80 18.20 0.701 0.717 U 4.00 REF 0.157 REF J V 1.75 REF 0.069 D H STYLE 1: PIN 1. BASE V 2. COLLECTOR G 3. EMITTER 4. COLLECTOR TO−247 CASE 340L−02 ISSUE F −T− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI C Y14.5M, 1982. −B− 2. CONTROLLING DIMENSION: MILLIMETER. E MILLIMETERS INCHES U L DIM MIN MAX MIN MAX A 20.32 21.08 0.800 8.30 N 4 B 15.75 16.26 0.620 0.640 C 4.70 5.30 0.185 0.209 A −Q− D 1.00 1.40 0.040 0.055 E 1.90 2.60 0.075 0.102 1 2 3 0.63 (0.025) M T B M F 1.65 2.13 0.065 0.084 G 5.45 BSC 0.215 BSC H 1.50 2.49 0.059 0.098 P J 0.40 0.80 0.016 0.031 −Y− K 19.81 20.83 0.780 0.820 L 5.40 6.20 0.212 0.244 K N 4.32 5.49 0.170 0.216 P --- 4.50 --- 0.177 Q 3.55 3.65 0.140 0.144 U 6.15 BSC 0.242 BSC W 2.87 3.12 0.113 0.123 W J F2 PL H STYPLINE 13.:BASE G 2.COLLECTOR D3 PL 3.EMITTER 4.COLLECTOR 0.25 (0.010) M Y Q S www.onsemi.com 7

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Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: MJH11017G MJH11019G MJH11020G MJH11021G MJH11022G