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  • 型号: STB75NF75LT4
  • 制造商: STMicroelectronics
  • 库位|库存: xxxx|xxxx
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STB75NF75LT4产品简介:

ICGOO电子元器件商城为您提供STB75NF75LT4由STMicroelectronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 STB75NF75LT4价格参考¥58.00-¥72.50。STMicroelectronicsSTB75NF75LT4封装/规格:晶体管 - FET,MOSFET - 单, N-Channel 75V 75A (Tc) 300W (Tc) Surface Mount D2PAK。您可以下载STB75NF75LT4参考资料、Datasheet数据手册功能说明书,资料中有STB75NF75LT4 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

ChannelMode

Enhancement

描述

MOSFET N-CH 75V 75A D2PAKMOSFET N-Ch 75 Volt 75 Amp

产品分类

FET - 单分离式半导体

FET功能

逻辑电平门

FET类型

MOSFET N 通道,金属氧化物

Id-ContinuousDrainCurrent

75 A

Id-连续漏极电流

75 A

品牌

STMicroelectronics

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

晶体管,MOSFET,STMicroelectronics STB75NF75LT4STripFET™ II

数据手册

点击此处下载产品Datasheet

产品型号

STB75NF75LT4

Pd-PowerDissipation

300 W

Pd-功率耗散

300 W

RdsOn-Drain-SourceResistance

10 mOhms

RdsOn-漏源导通电阻

10 mOhms

Vds-Drain-SourceBreakdownVoltage

75 V

Vds-漏源极击穿电压

75 V

Vgs-Gate-SourceBreakdownVoltage

+/- 15 V

Vgs-栅源极击穿电压

15 V

上升时间

155 ns

下降时间

60 ns

不同Id时的Vgs(th)(最大值)

2.5V @ 250µA

不同Vds时的输入电容(Ciss)

4300pF @ 25V

不同Vgs时的栅极电荷(Qg)

90nC @ 5V

不同 Id、Vgs时的 RdsOn(最大值)

11 毫欧 @ 37.5A,10V

产品培训模块

http://www.digikey.cn/PTM/IndividualPTM.page?site=cn&lang=zhs&ptm=26067

产品目录页面

点击此处下载产品Datasheet

产品种类

MOSFET

供应商器件封装

D2PAK

其它名称

497-3514-1

其它有关文件

http://www.st.com/web/catalog/sense_power/FM100/CL824/SC1165/PF64517?referrer=70071840

典型关闭延迟时间

110 ns

功率-最大值

300W

包装

剪切带 (CT)

商标

STMicroelectronics

安装类型

表面贴装

安装风格

SMD/SMT

封装

Reel

封装/外壳

TO-263-3,D²Pak(2 引线+接片),TO-263AB

封装/箱体

D2PAK-2

工厂包装数量

1000

晶体管极性

N-Channel

最大工作温度

+ 175 C

最小工作温度

- 55 C

标准包装

1

正向跨导-最小值

120 S

漏源极电压(Vdss)

75V

电流-连续漏极(Id)(25°C时)

75A (Tc)

系列

STB75NF75L

通道模式

Enhancement

配置

Single

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PDF Datasheet 数据手册内容提取

STB75NF75L Ω 2 N-channel 75V - 0.009 - 75A - D PAK STripFET™ II Power MOSFET Features Type V R I DSS DS(on) D STB75NF75L 75V <0.011Ω 75A ■ Exceptional dv/dt capability ■ 100% avalanche tested 3 1 ■ Low threshold drive D²PAK Description This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high- Figure 1. Internal schematic diagram efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements. Applications ■ Switching applications Table 1. Device summary Order code Marking Package Packaging STB75NF75LT4 B75NF75L D²PAK Tape & reel July 2007 Rev 3 1/13 www.st.com 13

Contents STB75NF75L Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13

STB75NF75L Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage (V = 0) 75 V DS GS V Gate-source voltage ± 15 V GS I (1) Drain current (continuous) at T = 25°C 75 A D C I Drain current (continuous) at T = 100°C 70 A D C I (2) Drain current (pulsed) 300 A DM P Total dissipation at T = 25°C 300 W TOT C Derating factor 2 W/°C dv/dt (3) Peak diode recovery voltage slope 10 V/ns E (4) Single pulse avalanche energy 680 mJ AS TJ Operating junction temperature -55 to 175 °C T Storage temperature stg 1. Current limited by package 2. Pulse width limited by safe operating area 3. I ≤ 75A, di/dt ≤ 500A/µs, V ≤ V , T ≤ T SD DD (BR)DSS j JMAX 4. Starting T = 25 oC, I = 37.5A, V = 30V J D DD Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case Max 0.5 °C/W thJC R Thermal resistance junction-ambient Max 62.5 °C/W thJA Maximum lead temperature for soldering T 300 °C l purpose 3/13

Electrical characteristics STB75NF75L 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Dvorlataing-esource breakdown ID = 250µA, VGS= 0 75 V Zero gate voltage drain VDS = Max rating, 1 µA I DSS current (VGS = 0) VDS = Max rating @125°C 10 µA Gate body leakage current IGSS (V = 0) VGS = ±15V ±100 nA DS VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA 1 2.5 V Static drain-source on VGS= 10V, ID= 37.5A 0.009 0.011 Ω R DS(on) resistance V = 5V, I = 37.5A 0.010 0.013 Ω GS D Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) Forward transconductance VDS = 15V, ID = 37.5A 120 S C Input capacitance iss 4300 pF C Output capacitance VDS =25V, f = 1 MHz, oss 660 pF Crss Reverse transfer VGS = 0 205 pF capacitance Qg Total gate charge VDD = 60V, ID = 75A 75 90 nC Qgs Gate-source charge VGS = 5V 18 nC Qgd Gate-drain charge see Figure15 31 nC 1. Pulsed: pulse duration=300µs, duty cycle 1.5% Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) Turn-on delay time 35 ns V = 40V, I = 37.5A, tr Rise time RDD= 4.7Ω, VD = 4.5V 155 ns t Turn-off delay time G GS 110 ns d(off) see Figure14 t Fall time 60 ns f 4/13

STB75NF75L Electrical characteristics Table 7. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current 75 A I (1) Source-drain current (pulsed) 300 A SDM VSD(2) Forward on voltage ISD = 75A, VGS = 0 1.3 V I = 75A, trr Reverse recovery time SD 120 ns di/dt = 100A/µs, Qrr Reverse recovery charge 500 nC V = 24V, T = 150°C I Reverse recovery current DD J 9 A RRM see Figure16 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% 5/13

Electrical characteristics STB75NF75L 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Transconductance Figure 7. Static drain-source on resistance 6/13

STB75NF75L Electrical characteristics Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs vs temperature temperature Figure 12. Source-drain diode forward Figure 13. Normalized B vs temperature VDSS characteristics 7/13

Test circuit STB75NF75L 3 Test circuit Figure 14. Switching times test circuit for Figure 15. Gate charge test circuit resistive load Figure 16. Test circuit for inductive load Figure 17. Unclamped Inductive load test switching and diode recovery times circuit Figure 18. Unclamped inductive waveform 8/13

STB75NF75L Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/13

Package mechanical data STB75NF75L D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 8 0.315 E 10 10.4 0.393 E1 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.4 0.015 V2 0º 4º 3 1 10/13

STB75NF75L Packaging mechanical data 5 Packaging mechanical data 2 D PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA mm inch DIM. MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0795 G 24.4 26.4 0.960 1.039 N 100 3.937 T 30.4 1.197 BASE QTY BULK QTY TAPE MECHANICAL DATA 1000 1000 mm inch DIM. MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 * on sales type 11/13

Revision history STB75NF75L 6 Revision history T able 8. Revision history Date Revision Changes 21-Jun-2004 1 First release 02-Oct-2006 2 New template, no content change 13-Jul-2007 3 New updates on Table7 12/13

STB75NF75L Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 13/13

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