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  • 型号: MSA1162GT1G
  • 制造商: ON Semiconductor
  • 库位|库存: xxxx|xxxx
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MSA1162GT1G产品简介:

ICGOO电子元器件商城为您提供MSA1162GT1G由ON Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 MSA1162GT1G价格参考¥0.17-¥0.20。ON SemiconductorMSA1162GT1G封装/规格:晶体管 - 双极 (BJT) - 单, 双极 (BJT) 晶体管 PNP 50V 100mA 80MHz 200mW 表面贴装 SC-59。您可以下载MSA1162GT1G参考资料、Datasheet数据手册功能说明书,资料中有MSA1162GT1G 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

TRANS GP PNP 50V SC59两极晶体管 - BJT 100mA 60V PNP

产品分类

晶体管(BJT) - 单路分离式半导体

品牌

ON Semiconductor

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

晶体管,两极晶体管 - BJT,ON Semiconductor MSA1162GT1G-

数据手册

点击此处下载产品Datasheet

产品型号

MSA1162GT1G

PCN设计/规格

点击此处下载产品Datasheet

不同 Ib、Ic时的 Vce饱和值(最大值)

500mV @ 10mA,100mA

不同 Ic、Vce 时的DC电流增益(hFE)(最小值)

200 @ 2mA,6V

产品种类

两极晶体管 - BJT

供应商器件封装

SC-59

其它名称

MSA1162GT1GOSCT

功率-最大值

200mW

包装

剪切带 (CT)

发射极-基极电压VEBO

7 V

商标

ON Semiconductor

增益带宽产品fT

80 MHz

安装类型

表面贴装

安装风格

SMD/SMT

封装

Reel

封装/外壳

TO-236-3,SC-59,SOT-23-3

封装/箱体

SC-59-3

工厂包装数量

3000

晶体管极性

PNP

晶体管类型

PNP

最大功率耗散

0.2 W

最大工作温度

+ 150 C

最大直流电集电极电流

0.1 A

最小工作温度

- 55 C

标准包装

1

电压-集射极击穿(最大值)

50V

电流-集电极(Ic)(最大值)

100mA

电流-集电极截止(最大值)

100nA

直流集电极/BaseGainhfeMin

200

系列

MSA1162

配置

Single

集电极—发射极最大电压VCEO

50 V

集电极—基极电压VCBO

60 V

集电极—射极饱和电压

0.5 V

集电极连续电流

0.1 uA

频率-跃迁

80MHz

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PDF Datasheet 数据手册内容提取

MSA1162GT1G General Purpose Amplifier Transistors PNP Surface Mount Features • http://onsemi.com Moisture Sensitivity Level: 1 • This is a Pb−Free Device COLLECTOR 3 MAXIMUM RATINGS (TA = 25°C) Rating Symbol Value Unit Collector−Base Voltage V(BR)CBO 60 Vdc Collector−Emitter Voltage V(BR)CEO 50 Vdc 1 2 Emitter−Base Voltage V(BR)EBO 7.0 Vdc BASE EMITTER Collector Current − Continuous IC 100 mAdc Collector Current − Peak IC(P) 200 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Power Dissipation PD 200 mW SC−59 CASE 318D Junction Temperature TJ 150 °C STYLE 1 Storage Temperature Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum MARKING DIAGRAM Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 62G M(cid:2) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (cid:2) Characteristic Symbol Min Max Unit 1 Collector−Emitter Breakdown Voltage V(BR)CEO 50 − Vdc (IC = 2.0 mAdc, IB = 0) 62G =Device Code M = Date Code* C(ICo l=le c1t0o r(cid:2)−ABdacs,e I EB =re 0a)kdown Voltage V(BR)CBO 60 − Vdc (cid:2) =Pb−Free Package (Note: Microdot may be in either location) Emitter−Base Breakdown Voltage V(BR)EBO 7.0 − Vdc (IE = 10 (cid:2)Adc, IC = 0) *Date Code orientation may vary depending upon manufacturing location. Collector−Base Cutoff Current ICBO − 0.1 (cid:2)Adc (VCB = 45 Vdc, IE = 0) Collector−Emitter Cutoff Current ICEO (VCE = 10 Vdc, IB = 0) − 0.1 (cid:2)Adc ORDERING INFORMATION (VCE = 30 Vdc, IB = 0) − 2.0 (cid:2)Adc (VCE = 30 Vdc, IB = 0, TA = 80°C) − 1.0 mAdc Device Package Shipping† DC Current Gain (Note 1) hFE − MSA1162GT1G SC−59 3000/Tape & Reel (VCE = 6.0 Vdc, IC = 2.0 mAdc) 200 400 (Pb−Free) Collector−Emitter Saturation Voltage VCE(sat) − 0.5 Vdc (IC = 100 mAdc, IB = 10 mAdc) †For information on tape and reel specifications, including part orientation and tape sizes, please Current−Gain − Bandwidth Product fT MHz refer to our Tape and Reel Packaging Specifications (IC = 1 mA, VCE = 10.0 V, f = 10 MHz) 80 − Brochure, BRD8011/D. 1. Pulse Test: Pulse Width ≤ 300 (cid:2)s, D.C. ≤ 2%. © Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: October, 2013 − Rev. 7 MSA1162GT1/D

MSA1162GT1G TYPICAL ELECTRICAL CHARACTERISTICS −200 1000 −2.0 mA −1.5 mA A) m NT (−160 −1.0 mA AIN TA = 100°C E G R T UR−120 EN 25°C −25°C C −0.5 mA R R R100 O U CT −80 C C LLE IB = −0.2 mA , DE CO −40 hF I, C TA = 25°C VCE = −1.0 V 0 10 0 −1 −2 −3 −4 −5 −6 −1 −10 −100 −1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (mA) Figure 1. Collector Saturation Region Figure 2. DC Current Gain V) 1000 E ( −1 G A LT IC/IB = 10 N TA = 100°C VO GAI OR TA = 100°C RENT 25°C −25°C LLECT 25°C −25°C R 100 O −0.1 U C C C UM D M , E XI hF MA 10 VCE = −6.0 V , E(sat)−0.01 −1 −10 −100 −1000 VC −1 −10 −100 −1000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 3. DC Current Gain Figure 4. V versus I CE(sat) C −10 −10,000 COMMON EMITTER 25°C ON VCE = 6 V TA = 100°C TI A)−1000 A (cid:2) TURV) NT ( −25°C SAE ( RE −100 TTER OLTAG−1 E CUR −10 MIV S E A − B ASE TA = 25°C I, B −1 B IC/IB = 10 −0.1 −0.1 −1 −10 −100 −1000 0 −0.1 −0.2 −0.3 −0.4 −0.5 −0.6 −0.7 −0.8 −0.9 −1 IC, COLLECTOR CURRENT (mA) VBE, BASE−EMITTER VOLTAGE (V) Figure 5. V versus I Figure 6. Base−Emitter Voltage BE(sat) C http://onsemi.com 2

MSA1162GT1G PACKAGE DIMENSIONS SC−59 CASE 318D−04 ISSUE H D NOTES: (cid:2)(cid:3)1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. (cid:2)(cid:3)2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS INCHES 3 DIM MIN NOM MAX MIN NOM MAX HE 1 2 E AA1 01..0010 01..0165 10..3100 00..003091 00..004052 00..005014 b 0.35 0.43 0.50 0.014 0.017 0.020 c 0.09 0.14 0.18 0.003 0.005 0.007 D 2.70 2.90 3.10 0.106 0.114 0.122 b E 1.30 1.50 1.70 0.051 0.059 0.067 e e 1.70 1.90 2.10 0.067 0.075 0.083 L 0.20 0.40 0.60 0.008 0.016 0.024 HE 2.50 2.80 3.00 0.099 0.110 0.118 C STYLE 1: A PIN 1.BASE 2.EMITTER 3.COLLECTOR L A1 SOLDERING FOOTPRINT* 0.95 0.95 0.037 0.037 2.4 0.094 1.0 0.039 0.8 (cid:2) mm (cid:3) SCALE 10:1 0.031 inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative http://onsemi.com MSA1162GT1/D 3

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