2N4123 2N4124 NPN 2N4125 2N4126 PNP www.centralsemi.com COMPLEMENTARY DESCRIPTION: SILICON TRANSISTORS The CENTRAL SEMICONDUCTOR 2N4123 series devices are complementary silicon small signal transistors manufactured by the epitaxial planar process designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL 2N4123 2N4124 2N4125 2N4126 UNITS Collector-Base Voltage VCBO 40 30 30 25 V Collector-Emitter Voltage VCEO 30 25 30 25 V Emitter-Base Voltage VEBO 5.0 5.0 4.0 4.0 V Continuous Collector Current IC 200 mA Power Dissipation PD 625 mW Power Dissipation (TC=25°C) PD 1.5 W Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance JA 200 °C/W Thermal Resistance JC 83.3 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C) 2N4123 2N4124 2N4125 2N4126 SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX MIN MAX UNITS ICBO VCB=20V - 50 - 50 - 50 - 50 nA IEBO VEB=3.0V - 50 - 50 - 50 - 50 nA BVCBO IC=10μA 40 - 30 - 30 - 25 - V BVCEO IC=1.0mA 30 - 25 - 30 - 25 - V BVEBO IE=10μA 5.0 - 5.0 - 4.0 - 4.0 - V VCE(SAT) IC=50mA, IB=5.0mA - 0.3 - 0.3 - 0.4 - 0.4 V VBE(SAT) IC=50mA, IB=5.0mA - 0.95 - 0.95 - 0.95 - 0.95 V hFE VCE=1.0V, IC=2.0mA 50 150 120 360 50 150 120 360 hFE VCE=1.0V, IC=50mA 25 - 60 - 25 - 60 - hfe VCE=10V, IC=2.0mA, f=1.0kHz 50 200 120 480 50 200 120 480 fT VCE=20V, IC=10mA, f=100MHz 250 - 300 - 200 - 250 - MHz Cob VCB=5.0V, IE=0, f=100kHz - 4.0 - 4.0 - 4.5 - 4.5 pF Cib VEB=0.5V, IC=0, f=100kHz - 8.0 - 8.0 - 10 - 10 pF NF VCE=5.0V, IC=100μA, RS=1.0kΩ, f=10Hz to 15.7kHz - 6.0 - 5.0 - 5.0 - 4.0 dB R1 (12-January 2016)

2N4123 2N4124 NPN 2N4125 2N4126 PNP COMPLEMENTARY SILICON TRANSISTORS TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (12-January 2016) www.centralsemi.com

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