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  • 型号: 2SD1898T100Q
  • 制造商: ROHM Semiconductor
  • 库位|库存: xxxx|xxxx
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2SD1898T100Q产品简介:

ICGOO电子元器件商城为您提供2SD1898T100Q由ROHM Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 2SD1898T100Q价格参考¥2.35-¥5.52。ROHM Semiconductor2SD1898T100Q封装/规格:晶体管 - 双极 (BJT) - 单, 双极 (BJT) 晶体管 NPN 80V 1A 100MHz 2W 表面贴装 MPT3。您可以下载2SD1898T100Q参考资料、Datasheet数据手册功能说明书,资料中有2SD1898T100Q 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

TRANSISTOR NPN 80V 1A SOT-89两极晶体管 - BJT NPN 80V 1A

产品分类

晶体管(BJT) - 单路分离式半导体

品牌

Rohm Semiconductor

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

晶体管,两极晶体管 - BJT,ROHM Semiconductor 2SD1898T100Q-

数据手册

点击此处下载产品Datasheet

产品型号

2SD1898T100Q

不同 Ib、Ic时的 Vce饱和值(最大值)

400mV @ 20mA,500mA

不同 Ic、Vce 时的DC电流增益(hFE)(最小值)

120 @ 500mA,3V

产品目录绘图

产品目录页面

点击此处下载产品Datasheet

产品种类

两极晶体管 - BJT

供应商器件封装

MPT3

其它名称

2SD1898T100QDKR

功率-最大值

2W

包装

Digi-Reel®

发射极-基极电压VEBO

5 V

商标

ROHM Semiconductor

增益带宽产品fT

100 MHz

安装类型

表面贴装

安装风格

SMD/SMT

封装

Reel

封装/外壳

TO-243AA

封装/箱体

SOT-89

工厂包装数量

1000

晶体管极性

NPN

晶体管类型

NPN

最大功率耗散

0.5 W

最大工作温度

+ 150 C

最大直流电集电极电流

1 A

最小工作温度

- 55 C

标准包装

1

电压-集射极击穿(最大值)

80V

电流-集电极(Ic)(最大值)

1A

电流-集电极截止(最大值)

-

直流电流增益hFE最大值

390

直流集电极/BaseGainhfeMin

82

配置

Single

集电极—发射极最大电压VCEO

80 V

集电极—基极电压VCBO

120 V

集电极连续电流

1 A

频率-跃迁

100MHz

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PDF Datasheet 数据手册内容提取

2SD1898 / 2SD1733 NPN 1.0A 80V Middle Power Transistor Datasheet lOutline Parameter Value MPT3 CPT3 Collector V 80V CEO Base r IC 1.0A Collector o Emitter Base Emitter f 2SD1898 2SD1733 lFeatures (SC-62) (SC-63) 1) Suitable for Middle Power Driver <SOT-89> d <SOT-428> 2) Complementary PNP Types : 2SB1260 / 2SB1181 e 3) Low V CE(sat) V = 0.4V Max. (I /I =500mA/20mA) CE(sat) C B d 4) Lead Free/RoHS Compliant. s n n e g lInner circuit m Collector i lApplicsations m Motor driver , LED driver Base e Power supply o D Emitter c w e R lPackaging specifications e Package Basic N Taping Reel size Tape width Part Nto. Package size ordering Marking code (mm) (mm) (mm) unit (pcs) o 2SD1898 MPT3 4540 T100 180 12 1,000 DF N 2SD1733 CPT3 6595 TL 330 16 2,500 D1733 www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 1/7 2013.05 - Rev.F

2SD1898 / 2SD1733 Data Sheet lAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Values Unit Collector-base voltage V 120 V CBO Collector-emitter voltage V 80 V CEO Emitter-base voltage V 5 V EBO r DC IC 1.0 o A Collector current Pulsed I *1 2.0 A CP f 0.5 *2 W 2SD1898 d 2.0 *3 W Power dissipation P D e 1 *4 W 2SD1733 d 10 *5 W Junction temperature Tj n 150s °C Range of storage temperature T -55 to +150 °C stg n e *1 Pw=20ms , duty=1/2 *2 Each terminal mounted on a reference land m g *3 Mounted on a ceramic board (40×40×0.7 mm) i *4 Mounted on a substrate s m *5 T =25°C C e lElectrical characteristics (Ta = 25°C) o D Parameter Symbol Conditions Min. Typ. Max. Unit c Collector-emitter BV I = 1mA 80 - - V breakdown voltage CEO Cw e Collector-base BV I = 50mA 120 - - V breakdown voltage R CBO C e Emitter-base BV I = 50mA 5 - - V breakdown vol tage EBO E N t Collector cut-off current I V = 100V - - 1 mA CBO CB o Emitter cut-off current I V = 4V - - 1 mA N EBO EB Collector-emitter V I = 500mA, I = 20mA - 0.15 0.40 V saturation voltage CE(sat) C B DC current gain h *6 V = 3V, I = 0.5A 120 - 390 - FE CE C V = 10V, I = -50mA Transition frequency f CE E - 100 - MHz T f=100MH Z V = 10V, I = 0A Output capacitance C CB E - 20 - pF ob f = 1MHz lh rank categories FE Rank Q R h 120 to 270 180 to 390 FE www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 2/7 2013.05 - Rev.F

2SD1898 / 2SD1733 Data Sheet lElectrical characteristic curves(Ta = 25°C) Fig.1 Ground Emitter Propagation Characteristics Fig.2 Typical Output Characteristics 1000 r mA] VPCuEls=e 5dV A] o T : I[C 100 NT : I[C f N E E R R d R R U 10 U C OR C Ta=10205ººCC OR e CT -40ºC CT d E 1 E L L L OL O n s C C 0.1 0 0.5 1 1.5 e n g m BASE TO EMITTER VOLTAGE : V [V] COLECTOR TO EMITTE VOLTAGE : V [V] BE CE i s m e o Fig.3 DC Current Gain vs. Collector Current(I) FDig.4 DC Current Gain vs. Collector Current(II) c 1000 1000 VCE= 3V e w Ta=25ºC Pulsed Pulsed E E F F h R h N : e N : AI AI G G N NT 100 t NT 100 E E V = 3V R o Ta=100ºC R CE 1V R 25ºC R U U C -40ºC C N C C D D 10 10 1 10 100 1000 10000 1 10 100 1000 10000 COLLECTOR CURRENT : I [mA] COLLECTOR CURRENT : I [mA] C C www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 3/7 2013.05 - Rev.F

2SD1898 / 2SD1733 Data Sheet lElectrical characteristic curves(Ta = 25°C) Fig.5 Collector-Emitter Saturation Voltage Fig.6 Collector-Emitter Saturation Voltage vs. Collector Current (I) vs. Collector Current (II) 1 1 r V] IC / IB = 20 V] Ta=25ºC [at) [at) o s s E( E( VC VC f R GE : R GE : d EA Ta=100ºC EA TTLT 0.1 25ºC TTLT 0.1 IC / IB =20/1 MIO -40ºC MIO e10/1 EV EV -N -N R R O O O O d TTI TTI CA CA ER ER s LU LU n LT LT OA OA CS CS n 0.01 0.e01 1 10 100 1000 10000 1 10 100 1000 10000 g m COLLECTOR CURRENT : I [mA] COLLECTOR CURRENT : I [mA] C C i s m e o Fig.7 Base-Emitter Saturation Voltage DFig.8 Gain Bandwidth Product vs. Collector Current vs. Emitter Current c 10 V] e w Hz] V [BE(sat) R e Y : f[MT E : Ta= -4250ººCC NC G E A 100ºC N U T 1 t Q L E R VO o FR EN N TO O MITTIN TI -ERA NSI EU A ASAT IC / IB = 20 TR BS 0.1 1 10 100 1000 10000 COLLECTOR CURRENT : I [mA] EMITTER CURRENT : I [mA] C E www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 4/7 2013.05 - Rev.F

2SD1898 / 2SD1733 Data Sheet lElectrical characteristic curves(Ta = 25°C) Fig.9 Emitter input capacitance vs. Emitter-Base Voltage F] Collector output capacitance vs. Fig.10 Safe Operating Area p Collector-Base Voltage b [ 10 CE : Cob [pF] [A] C 2SD1898 1mos1 0mrs CITANCE : Ci NT : I 1 f AN E PA R d AT R UT CPACI R CU 0.1 100ems PA O DC TC T OUUT EC 0.01 d(reMfoeurenntecde olann da) R P LL ON O n s TR I C Ta=25ºC CE Single non repetitive pulse LETT 0.0e01 n OLMI 0.1 1 10 100 CE g COLLECTOR - BASE VOLTAGE : V [V] m CB COLLECTOR TO EMITTER VOLTAGE : V [V] EMITTER - BASE VOLTAGE : V [V] CE EB i s m e o Fig.11 Safe Operating Area D c 10 2SD1733 1ms A] e w [C 10ms T : I 1 R e N E R R N U 0.1 t C 100ms R o O T C DC EN 0.01 L L O C Ta=25ºC Single non repetitive pulse 0.001 0.1 1 10 100 COLLECTOR TO EMITTER VOLTAGE : V [V] CE www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 5/7 2013.05 - Rev.F

2SD1898 / 2SD1733 Data Sheet lDimensions (Unit : mm) D b1 A MPT3 HE E r o E p L L f b2 c b x S A db4 e1 e e d β 3 l s n 1 l n e A b3 m g b5 2 l y S i e1 S s m e e Pattern of terminal position areas [Not a recommended pattern of soldering pads] o D cMILIMETERS INCHES DIM MIN MAX MIN MAX A e 1.40 1w.50 0.055 0.059 b 0.30 0.50 0.012 0.020 b1 1.50 1.70 0.059 0.067 R b2 0.40 e 0.60 0.016 0.024 c 0.35 0.50 0.014 0.020 D 4.40 4.70 0.173 0.185 N E 2.40 2.70 0.094 0.106 t e 3.00 0.118 o e1 1.50 0.059 HE 3.70 4.30 0.146 0.169 LE 0.80 1.20 0.031 0.047 N Lp 1.01 1.41 0.040 0.056 x - 0.15 - 0.006 y - 0.10 - 0.004 MILIMETERS INCHES DIM MIN MAX MIN MAX b3 - 0.65 - 0.026 b4 - 1.70 - 0.067 b5 - 0.75 - 0.030 l1 - 1.71 - 0.067 l2 - 0.58 - 0.023 l3 - 3.72 - 0.146 β 45° 45° Dimension in mm / inches www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 6/7 2013.05 - Rev.F

2SD1898 / 2SD1733 Data Sheet lDimensions (Unit : mm) A2 D B A b1 c1 CPT3 2 L 3 L r E H A1 o 4 b2 L f b3 L dL1 Lp c e e b x B A A3 d l3 l2 l1n s e b5 n g 6 m b ie s m Pattern of terminal position areas [Not a recommended pattern of soeldering pads] o DIM MILIMETERS D INCHES MIN MAX MIN MAX A1 0c.00 0.15 0.000 0.006 A2 2.20 2.50 0.087 0.098 A3 0.25 0.010 w b e 0.55 0.75 0.022 0.030 b1 5.00 5.30 0.197 0.209 b2R 5.00 0.197 b3 0e.75 0.030 c 0.40 0.60 0.016 0.024 c1 0.40 0.60 0.016 0.024 N D 6.30 6.70 0.248 0.264 t E 5.40 5.80 0.213 0.228 o e 2.30 0.091 HE 9.00 10.00 0.354 0.394 L 2.20 2.80 0.087 0.110 N L1 0.80 1.40 0.031 0.055 L2 1.20 1.80 0.047 0.071 L3 5.30 0.209 L4 0.90 0.035 Lp 1.00 1.60 0.039 0.063 x - 0.25 - 0.010 MILIMETERS INCHES DIM MIN MAX MIN MAX b5 - 1.00 - 0.04 b6 - 5.20 - 0.205 l1 - 2.50 - 0.098 l2 - 5.50 - 0.217 l3 - 10.00 - 0.394 Dimension in mm / inches www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 7/7 2013.05 - Rev.F

Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representativeand verify the latest specifica- r tions : o 3) Although ROHM is continuously working to improve product reliability and quality, semicon- ductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take fsafety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the ratindg specified by ROHM. 4) Examples of application circuits, circuit constants and any other informatione contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. d 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or othern rights held by ROHM or asny other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. n e 6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communi- cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. m g 7) The Products specified in this document are not designed to be radiation tolerant. i 8) For use of our Products in applications requiring a high desgree of reliability (as exemplified below), please contact and consult m with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and poweer transmission systems. 9) Do not use our Products in applications requiring extremely high reliability, such as aerospace o equipment, nuclear power control systems, and suDbmarine repeaters. 10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with c the recommended usage conditions and specifications contained herein. 11) ROHM has used reasonable care tow ensur the accuracy of the information contained in this e document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. R e 12) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting N non-compliance with any applicable laws or regulations. t 13) When providing our Products and technologies contained in this document to other countries, o you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. N 14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com R1102A © 2013 ROHM Co., Ltd. All rights reserved.

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