A Business Partner of Renesas Electronics Corporation. μ PG2163T5N Data Sheet D R09DS0019EJ0300 GaAs Integrated Circuit Rev.3.00 Broadband SPDT Switch for Dual-Band Wireless LAN May 19, 2011 3 E DESCRIPTION X The μPG2163T5N is GaAs MMIC SPDT (Single Pole Double Throw) switch which was developed for 2.4 GHz and 6 3 GHz dual-band wireless LAN. This device can operate at frequencies from 0.5 to 2.5 GHz, 4.9 to 6.0 GHz and 8.0 GHz, U with low insertion loss and high isolation. 6 This device is housed in a 6-pin plastic TSON (Thin Small Out-line Non-leaded) package. And this package is able to 1 high-density surface mounting. N 2 <R> FEATURES G • Operating frequency : f = 0.5 to 2.5 GHz, 4.9 to 6.0 GHz and 8.0 GHz (cid:129) Switch control voltage : Vcont (H) = 2.8 to 5.0 V (I3.0 V TYP.) C : Vcont (L) = −0.3 to 0.3 V (0 V TYP.) (cid:129) Low insertion loss : Lins1 = 0.40 dB TYTP. @ f = 2.4 to 2.5 GHz : Lins2 = 0.50 dB TYP. @ f = 4.9 to 6.0 G:Hz t : Lins3 = 0.90 dB TYP. @ f = 8.0 GHz n : Lins4 = 0.5N0 dB TYP. @ f = 0.5 to 2.5 GHz (cid:129) High isolation : ISL1 = 38 dB TYP. @ f = 2.4 toe 2.5 GHz : ISL2 = 30 dB TYP. @ f = 4.9 to 6.0 GHz m : ISL3 = 23 dB TYP. @ f = 8.0 GHz : OISL4 = 43 dB TYP. @ f = 0.5 to 1.0 GHz : ISL5 = 38 dB TYP. @e f = 1.0 to 2.5 GHz (cid:129) Handling power : Pin (1 dB) = +31.0 dBcm TYP. @ f = 2.5 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V : Pin (1 dB) = +29.0 dBm TYP. @ f = 6.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V a (cid:129) High-density surface mounting : 6-pin plastic TSON package (1.5 × 1.5 × 0.37 mm) C l <R> APPLICATIONS p (cid:129) Dual-band wireless LAN (IEEE802.11ea/b/g/n), etc. S R ORDERING INFORMATION n PaIrt Number Order Number Package Marking Supplying Form I μPG2163T5N-E2 μPG2163T5N-E2-A 6-pin plastic TSON G4X •Embossed tape 8 mm wide D - (Pb-Free) •Pin 1, 6 face the perforation side of the tape p •Qty 3 kpcs/reel Remark To order eovaluation samples, please contact your nearby sales office. Part number for sample order: μPG2163T5N-A r D CAUTION Although this device is designed to be as robust as possible, ESD (Electrostatic Discharge) can damage this device. This device must be protected at all times from ESD. Static charges may easily produce potentials of several kilovolts on the human body or equipment, which can discharge without detection. Industry-standard ESD precautions must be employed at all times. The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. R09DS0019EJ0300 Rev.3.00 Page 1 of 8 May 19, 2011

A Business Partner of Renesas Electronics Corporation. μPG2163T5N PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM D (Top View) (Top View) (Bottom View) Pin No. Pin Name 1 GND 1 6 1 6 6 1 G 2 Vcont2 3 E3 OUT2 (RX) 2 4 5 2 5 5 2 X 4 OUTX1 (TX) 3 4 3 4 4 3 5 Vcont1 3 U 6 IN (ANT) 6 Remark Exposed pad : GND 1 TRUTH TABLE N 2 Vcont1 Vcont2 IN (ANT)−OUT1 (TX) IN (ANT)−OUT2 (RX) G High Low OFF ON I C Low High ON OFF T ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unles:s otherwise specified) t n N Parameter Symbol Ratings Unit e Switch Control Voltage Vcont −6.0 to +6.0 V m Input Power Pin +32 dBm Operating Ambient Temperature OTA −45 to +85 °C e Storage Temperature Tstg −55 to +135 °C c <R> RECOMMENDED OPERATING RANaGE (TA = +25°C, unless otherwise specified) C l Parameter Symbol pMIN. TYP. MAX. Unit Switch Control Voltage (H) Vconet (H) 2.8 3.0 5.0 V Switch Control VSoltage (L) Vcont (L) −0.3 0 0.3 V R Operating Frequency 1 Note 1 f1 2.4 − 2.5 GHz Operating Frequency 2 Note 1 f2 4.9 − 6.0 GHz n OperaIting Frequency 3 Note 2 f3 − 8.0 − GHz I ODperating Frequency 4 Note 3- f4 0.5 − 1.0 GHz Operating Frequency 5 Nopte 3 f5 1.0 − 2.4 GHz o Notes 1. DC blocking capacitors = 4 pF 2. DCr blocking capacitors = 2 pF 3. DDC blocking capacitors = 100 pF R09DS0019EJ0300 Rev.3.00 Page 2 of 8 May 19, 2011

A Business Partner of Renesas Electronics Corporation. μPG2163T5N <R> ELECTRICAL CHARACTERISTICS (T = +25°C, V = 3.0 V, V = 0 V, Z = 50 Ω, DC blocking capacitors = 4 pF, A cont (H) cont (L) 0 D unless otherwise specified) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit 3 Insertion Loss 1 Lins1 f = 2.4 to 2.5 GHz − E0.40 0.60 dB X Insertion Loss 2 Lins2 f = 4.9 to 6.0 GHz − 0.50 0.80 dB Insertion Loss 3 Lins3 f = 8.0 GHz Note 1 − 0.90 3− dB Insertion Loss 4 Lins4 f = 0.5 to 2.5 GHz Note 2 U− 0.50 − dB 6 Isolation 1 ISL1 f = 2.4 to 2.5 GHz 35 38 − dB Isolation 2 ISL2 f = 4.9 to 6.0 GHz 27 310 − dB Isolation 3 ISL3 f = 8.0 GHz Note 1 N − 23 − dB 2 Isolation 4 ISL4 f = 0.5 to 1.0 GHz Note 2 40 43 − dB G Isolation 5 ISL5 f = 1.0 to 2.5 GHz Note 2 35 38 − dB Input Return Loss 1 RLin1 f = 2.4 to 2.5 GIHz C− 15 − dB Input Return Loss 2 RLin2 f = 4.9 to 6.0 GHz − 15 − dB T Input Return Loss 3 RLin3 f = 8.0 GHz Note 1 − 15 − dB : Input Return Loss 4 RLin4 f = 0.5 to 2.5 GHz Note 2 t − 20 − dB Output Return Loss 1 RLout1 f = 2.4 to 2.5 GHz n − 15 − dB N Output Return Loss 2 RLout2 f = 4.9 to 6.0 GHz e − 15 − dB Output Return Loss 3 RLout3 f = 8.0 GHz Note 1 − 15 − dB m Output Return Loss 4 RLout4 f = 0.5 to 2.5 GHz Note 2 − 20 − dB O 1 dB Loss Compression Pin (1 dB) 1 f = 2.4 to 2.5e GHz − +31.0 − dBm Input Power 1 Note 3 1 dB Loss Compression Pin (1 dB) 2 f = 4.9 toc 6.0 GHz − +29.0 − dBm Input Power 2 Note 3 a Input 3rd Order Intercept PCoint IIP3 l − +55 − dBm Switch Control Current Icont p − 0.1 1.0 μA Switch Control Speed tSWe 50% CTL to 90/10% − 50 − ns S R Notes 1. DC blocking capacitors = 2 pF 2. DC blocking capacito rs = 100 pF n 3. Pin (1 dB) is measured the input power level when the insertion loss increases more 1 dB than that of linear I range. I D - Caution This devicpe is used it is necessary to use DC blocking capacitors. o r D R09DS0019EJ0300 Rev.3.00 Page 3 of 8 May 19, 2011

A Business Partner of Renesas Electronics Corporation. μPG2163T5N <R> EVALUATION CIRCUIT D 4 pF 1 6 IN (ANT) 3 E X Vcont2 2 5 Vcont1 1 000 pF 1 000 pF 3 U 6 OUT2 (RX) 3 4 OUT1 (TX) 1 C1 C1 N 2 G Remark C1: 2.4 to 2.5 GHz and 4.9 to 6.0 GHz 4 pF 8.0 GHz 2 pF 0.5 to 2.5 GHz I100 pF C The application circuits and their parameters are forT reference only and are not intended for use in actual design-ins. : t n N e m O e c a C l p e S R n I I D - p o r D R09DS0019EJ0300 Rev.3.00 Page 4 of 8 May 19, 2011

A Business Partner of Renesas Electronics Corporation. μPG2163T5N MOUNTING PAD AND SOLDER MASK LAYOUT DIMENSIONS 6-PIN PLASTIC TSON (UNIT: mm) D MOUNTING PAD 3 0.3 0.5 0.3 E X 3 U 6 3 5 0. 0. 1 0 1. N 2 5 0. G 2 0. I C 0.3 T : t SOLDER MASK n N 0.475 0.25 e0.475 m O e c 0.35 0.5 a 55 C 0. l 5 p 0. e S 5 1 R0.25 0. n Solder thickness : 0.08 mm I I DRemark The mounting- pad and solder mask layouts in this document are for reference only. When desipgning PCB, please consider workability of mounting, solder joint reliability, prevention of solder bridge and so on, in order to optimize the design. o r D R09DS0019EJ0300 Rev.3.00 Page 5 of 8 May 19, 2011

A Business Partner of Renesas Electronics Corporation. μPG2163T5N PACKAGE DIMENSIONS 6-PIN PLASTIC TSON (UNIT: mm) D (Top View) (Side View) (Bottom View) 0.3±0.07 1.5±0.1 3 E X 3 U 6 0 6 0. ± 5 1 0. 1 1 0. 0. ± ± 5 2 1. N 2 1. G I C +0.072–0.05 T 0. 0.37+–00..0035 0.2±t0:.1 0.7±0.1 n N e m O e c a C l p e S R n I I D - p o r D R09DS0019EJ0300 Rev.3.00 Page 6 of 8 May 19, 2011

A Business Partner of Renesas Electronics Corporation. μPG2163T5N <R> RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. D Soldering Method Soldering Conditions Condition Symbol Infrared Reflow Peak temperature (package surface temperature) : 260°C or below IR260 Time at peak temperature : 10 seconds or less 3 E Time at temperature of 220°C or higher : 60 seconds or less Preheating time at 120 to 180°C : 120±30 seconds X Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below 3 U Partial Heating Peak temperature (terminal temperature) : 350°C or below HS350 6 Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below 1 N Caution Do not use different soldering methods together (except for partial heatin2g). G I C T : t n N e m O e c a C l p e S R n I I D - p o r D R09DS0019EJ0300 Rev.3.00 Page 7 of 8 May 19, 2011

A Business Partner of Renesas Electronics Corporation. μPG2163T5N This product uses gallium arsenide (GaAs). Caution GaAs Products GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. D (cid:129)Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1.Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 3 E 2.Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final dispXosal. (cid:129)Do not burn, destroy, cut, crush, or chemically dissolve the product. (cid:129)Do not lick the product or in any way allow it to enter the mouth. 3 U 6 1 N 2 G I C T : t n N e m O e c a C l p e S R n I I D - p o r D R09DS0019EJ0300 Rev.3.00 Page 8 of 8 May 19, 2011

Revision History μPG2163T5N Data Sheet Description D Rev. Date Page Summary − Feb 2008 − Previous No. :PG10626EJ02V0DS 3.00 May 19, 2011 Throughout Modification of operating frequencies 3 f = 2.4 to 2.5 GHz and 4.9 to 6.0 GHz -> f = 0.5 to 2E.5 GHz, 4.9 to 6.0 GHz and 8.0 GHz p.1 Modification of APPLICATIONS X p.7 Modification of RECOMMENDED SOLDERING CONDITIONS 3 U 6 1 N 2 G I C T : t n N e m O e c a C l p e S R n I I D - p o r D All trademarks and registered trademarks are the property of their respective owners. C - 1

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