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  • 型号: MA4AGSW1A
  • 制造商: M/A-COM
  • 库位|库存: xxxx|xxxx
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MA4AGSW1A产品简介:

ICGOO电子元器件商城为您提供MA4AGSW1A由M/A-COM设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 MA4AGSW1A价格参考。M/A-COMMA4AGSW1A封装/规格:RF 开关, RF Switch IC General Purpose SPST 50GHz Die。您可以下载MA4AGSW1A参考资料、Datasheet数据手册功能说明书,资料中有MA4AGSW1A 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

射频/IF 和 RFID

描述

SPST ALGAAS SWITCHRF 开关 IC .05-50GHz SPST AlGaAs IL .5dB

产品分类

RF 开关

IIP3

-

品牌

MACOMM/A-Com Technology Solutions

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

RF集成电路,RF 开关 IC,MACOM MA4AGSW1A-

数据手册

点击此处下载产品Datasheet

P1dB

-

产品型号

MA4AGSW1AMA4AGSW1A

RF类型

通用

产品种类

RF 开关 IC

介入损耗

1.2 dB

供应商器件封装

模具

关闭隔离—典型值

30 dB

其它名称

1465-1019

包装

托盘 - 晶粒

商标

MACOM

封装/外壳

模具

封装/箱体

Die

工作温度

-55°C ~ 125°C

工厂包装数量

25

开关数量

Single

开关配置

SPST

拓扑

吸收性

插损@频率

0.3dB @ 50GHz

最大工作温度

+ 125 C

最小工作温度

- 55 C

标准包装

25

特性

-

电压-电源

-

电源电流

10 mA

电路

SPST

阻抗

-

隔离@频率

46dB @ 50GHz (标准)

频率

50 MHz to 70 GHz

频率 -上

50GHz

频率 -下

50MHz

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PDF Datasheet 数据手册内容提取

MA4AGSW1A SPST Non-Reflective AlGaAs PIN Diode Switch Rev. V7 Features  Ultra Broad Bandwidth : 50 MHz to 50 GHz  Functional Bandwidth : 50 MHz to 70 GHz  0.5 dB Insertion Loss at 50 GHz  46 dB Isolation at 50 GHz  Low Current consumption: -5 V low loss state +10 mA Isolation state  Silicon Nitride Passivation  Polymer Scratch protection  RoHS Compliant* Description Yellow areas indicate bond pads The MA4AGSW1A is an Aluminum-Gallium- Arsenide, single pole, single throw (SPST), absorptive PIN diode switch. The switch features enhanced AlGaAs anodes which are formed using MACOM’s patented hetero-junction technology. This technology produces a switch with less loss than conventional GaAs processes. As much as a 0.3 dB reduction in insertion loss can be realized at 50 GHz. These devices are fabricated on an OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. The diodes themselves exhibit low series resistance, low capacitance, and fast switching speed. They are fully passivated with silicon nitride and have an additional polymer layer for scratch protection. The protective coating prevents damage to the diode junction and anode air-bridges during handling and assembly. Off chip bias circuitry is required. Applications The output port of this device, J2, is terminated into 50 Ω during isolation mode, which allows this signal to be absorbed rather than reflected back. This Ordering Information functionality makes it ideal for instrumentation and radar applications. An absorptive switch can be Part Number Package added to other AlGaAs reflective switches to MA4AGSW1A Waffle Pack improve isolation VSWR and increase isolation magnitude. The ultra low capacitance of the PIN diodes makes it ideal for usage in low loss and high isolation microwave and millimeter wave switch designs through 70 GHz. The lower series resistance of the AlGaAs diodes reduces the total insertion loss and distortion of the device. AlGaAs PIN switches are used in applications such as * Restrictions on Hazardous Substances, switching arrays for radar systems, radiometers, and European Union Directive 2011/65/EU. other multi-function components. 111 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support

MA4AGSW1A SPST Non-Reflective AlGaAs PIN Diode Switch Rev. V7 Electrical Specifications: T = +25°C (on wafer measurements) A Parameter Test Conditions Units Min. Typ. Max. Insertion Loss (J1 - J2) -5 V @ J1 and B, 50 GHz dB — 1.2 — Isolation (J1 - J2 (terminated by 50 Ω)) 10 ma @ J1 and B, 50 GHz dB — 30 — Input Return Loss (J1 - J2) -5 V @ J1 and B, 50 GHz dB — 15 — Output Return Loss (J2 - J1) -5 V @ J1 and B, 50 GHz dB — 18 — Isolation (J2 (terminated by 50 Ω)) 10 ma @ J1 and B, 50 GHz dB — 18 — Switching Speed (J1 - J2) ±5 V PIN TTL Driver ns — 10 — (10% -90% RF Voltage) 1 MHz Repetition Frequency, 10 GHz 1. Typical switching speed is measured from 10% to 90% of the detected RF voltage driven by a TTL compatible driver. Driver output parallel RC network uses a capacitor between 390 - 560 pF and a resistor between 150 - 220 Ohms to achieve 10 ns rise and fall times. 2. Bias nodes, J1 and B may be connected together Absolute Maximum Ratings3,4 Parameter Absolute Maximum Handling Procedures CW RF Incident Power 23 dBm Please observe the following precautions to avoid Breakdown Voltage 25 V damage: Bias Current ±25 mA Static Sensitivity Junction Temperature7,8 +150°C These electronic devices are sensitive to electrostatic discharge (ESD) and can be damaged Operating Temperature -55°C to +125°C by static electricity. Proper ESD control techniques Storage Temperature -55°C to +150°C should be used when handling these devices. 3. Exceeding any one or combination of these limits may cause permanent damage to this device. 4. MACOM does not recommend sustained operation near these survivability limits. 222 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support

MA4AGSW1A SPST Non-Reflective AlGaAs PIN Diode Switch Rev. V7 Typical RF Performance (Probed on Wafer) Insertion Loss @ -5 V Isolation @ +10 mA 0.0 0 -0.5 -20 -1.0 B) B) -40 d d ( ( -1.5 -60 -2.0 -2.5 -80 0 10 20 30 40 50 0 10 20 30 40 50 Frequency (GHz) Frequency (GHz) Input Return Loss @ -5 V Output Return Loss @ -5 V (Insertion Loss State) 0 0 -10 -10 -20 -20 -30 -30 B) B) d d ( -40 ( -40 -50 -50 -60 -60 -70 -70 0 10 20 30 40 50 0 10 20 30 40 50 Frequency (GHz) Frequency (GHz) Output Return Loss @ -5 V (Isolation Loss State) 0 -10 -20 -30 B) d ( -40 -50 -60 -70 0 10 20 30 40 50 Frequency (GHz) 333 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support

MA4AGSW1A SPST Non-Reflective AlGaAs PIN Diode Switch Rev. V7 Operation of the MA4AGSW1A Switch An external bias network and DC return is required for successful operation of the MA4AGSW1A absorptive SPST AlGaAs PIN diode switch. The backside area of the die is the RF and DC ground return plane. In the low loss state, the series diode is forward biased with negative current at DC Bias B1 and the match diode is biased at 0 V at DC Bias B. In the isolated state, the shunt diode and the match diode are both forward biased at DC Bias B1 and DC Bias B (series diode becomes reverse biased ). This isolation state bias results in a good 50 Ω match into Port J2. Typical driver connections are shown in the table below. The bias network design shown in the schematic should yield >30 dB RF to DC isolation. Available for use in conjunction with MACOM’s line of AlGaAs switches are two, fully integrated, broadband, monolithic, bias networks which may be used as an alternative to the suggested individual component bias network shown below. Refer to datasheets for the MA4BN1840-1 and MA4BN1840-2 for additional information. The lowest insertion loss, P1dB, IP3, and switching speed is achieved by applying a minimum value of | -2 V | at DC Bias node, which is achievable with a standard, ±5 V TTL Controlled PIN Diode Driver. MA4AGSW1A Schematic with Bias Network for 10 - 30 GHz5,6,7 DC Bias B1 10 pF MA4AGSW1A DC Ground Return 4.7 nH 4.7 nH DC and RF ground re- 10 pF 10 pF Matching B MA4AGSW1A 5. DC Bias 1 and DC Bias B nodes can be connected together. 6. Diode junction forward bias voltage, Δ V @ 10 mA ~ 1.35 V @ + 25°C. F 7. External resistor values at ports “B” and “B1” can be chosen by subtracting 1.35 V voltage drop from the DC supply voltage, and dividing by the desired forward current. For port “B”, subtract 50 ohms from this value to account for the internal termination resistors. Typical Driver Connections J1 - J2 Low Loss: Good VSWR @ J1 & J2 J1 - J2 Isolation: Good VSWR @ J2 DC Bias 1 = -10 mA DC Bias 1 = +10 mA DC Bias B = -5 V DC Bias B = +10 mA 444 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support

MA4AGSW1A SPST Non-Reflective AlGaAs PIN Diode Switch Rev. V7 Chip Dimensions and Bonding Pad Locations (In Yellow) mils mm Dimension Min Max Min Max A 44.9 46.9 1.14 1.19 B 36.9 38.9 0.94 0.99 C 10.4 11.4 0.26 0.29 D 22.8 23.4 0.58 0.59 E 17.3 17.9 0.44 0.45 F 20.3 20.9 0.52 0.53 G 37.9 38.5 0.96 0.98 H 3.4 4.4 0.09 0.11 Thickness 3.5 4.5 0.09 0.11 555 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support

MA4AGSW1A SPST Non-Reflective AlGaAs PIN Diode Switch Rev. V7 Assembly Instructions Assembly Technique The MA4AGSW1A, AlGaAs switch is designed to be Cleanliness mounted with electrically conductive silver epoxy or with a lower temperature solder perform, which does These chips should be handled in a clean not have a rich tin content. environment. Solder Die Attach Static Sensitivity All die attach and bonding methods should be These Devices are considered ESD Class 1A HBM. compatible with gold metal. Solder which does not Proper ESD techniques should be used when scavenge gold, such as 80/20, Au/Sn or Indalloy #2 handling these devices. is recommended. Do not expose die to temperatures greater than 300°C for more than 10 seconds. General Handling The protective polymer coating on the active areas Electrical Conductive Epoxy Die Attach of the die provides scratch and impact protection, Use a controlled thickness of approximately 2 mils particularly for the metal air bridge, which contacts for best electrical conductivity and lowest thermal the diode’s anode. Die should primarily be handled resistance. Cure epoxy per manufacturer’s with vacuum pickups, or alternatively with plastic schedule. Typically 150°C for 1 hour. tweezers. Ribbon / Wire Bonding Thermo-compression wedge or ball bonding may be used to attach ribbons or wire to the gold bonding pads. A 1/4 x 3 mil gold ribbon is recommended on all RF ports and should be kept as short as possible for the lowest inductance and best microwave performance. For more detailed handling and assembly instructions, see Application Note M541. 666 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support

MA4AGSW1A SPST Non-Reflective AlGaAs PIN Diode Switch Rev. V7 MACOM Technology Solutions Inc. All rights reserved. Information in this document is provided in connection with MACOM Technology Solutions Inc ("MACOM") products. These materials are provided by MACOM as a service to its customers and may be used for informational purposes only. Except as provided in MACOM's Terms and Conditions of Sale for such products or in any separate agreement related to this document, MACOM assumes no liability whatsoever. MACOM assumes no responsibility for errors or omissions in these materials. MACOM may make changes to specifications and product descriptions at any time, without notice. MACOM makes no commitment to update the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to its specifications and product descriptions. No license, express or implied, by estoppels or otherwise, to any intellectual property rights is granted by this document. THESE MATERIALS ARE PROVIDED "AS IS" WITHOUT WARRANTY OF ANY KIND, EITHER EXPRESS OR IMPLIED, RELATING TO SALE AND/OR USE OF MACOM PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, CONSEQUENTIAL OR INCIDENTAL DAMAGES, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. MACOM FURTHER DOES NOT WARRANT THE ACCURACY OR COMPLETENESS OF THE INFORMATION, TEXT, GRAPHICS OR OTHER ITEMS CONTAINED WITHIN THESE MATERIALS. MACOM SHALL NOT BE LIABLE FOR ANY SPECIAL, INDIRECT, INCIDENTAL, OR CONSEQUENTIAL DAMAGES, INCLUDING WITHOUT LIMITATION, LOST REVENUES OR LOST PROFITS, WHICH MAY RESULT FROM THE USE OF THESE MATERIALS. MACOM products are not intended for use in medical, lifesaving or life sustaining applications. MACOM customers using or selling MACOM products for use in such applications do so at their own risk and agree to fully indemnify MACOM for any damages resulting from such improper use or sale. 777 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support