HMC349MS8G 349MS8GE / v02.0607 HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 4 GHz Typical Applications Features The HMC349MS8G / HMC349MS8GE is ideal for: High Isolation: 70 dB @ 1 GHz 57 dB @ 2 GHz • Basestation Infrastructure Single Positive Control: 0/+5V • MMDS & 3.5 GHz WLL +52 dBm Input IP3 • CATV/CMTS Non-Refl ective Design • Test Instrumentation All Off State Ultra Small MS8G SMT Package: 14.8 mm2 Included in the HMC-DK005 Designer’s Kit Functional Diagram General Description 10 The HMC349MS8G & HMC349MS8GE are high isolation non-refl ective DC to 4 GHz GaAs MESFET SPDT switches in low cost 8 lead MSOP8G surface mount packages with exposed ground paddles. T The switch is ideal for cellular/PCS/3G basestation M applications yielding 50 to 60 dB isolation, low S 0.8 dB insertion loss and +52 dBm input IP3. Power - handling is excellent up through the 3.5 GHz WLL S band with the switch offering a P1dB compression E point of +31 dBm. On-chip circuitry allows a single H positive voltage control of 0/+5 Volts at very low DC C currents. An enable input (EN) set to logic high will T put the switch in an “all off” state. I W Electrical Specifi cations, T = +25° C, Vctl = 0/+5 Vdc, Vdd = +5 Vdc, 50 Ohm System S A Parameter Frequency Min. Typ. Max. Units DC - 1.0 GHz 0.8 1.1 dB DC - 2.0 GHz 0.9 1.2 dB Insertion Loss DC - 3.0 GHz 1.2 1.5 dB DC - 4.0 GHz 1.8 2.1 dB DC - 1.0 GHz 60 70 dB DC - 2.0 GHz 54 57 dB Isolation (RFC to RF1/RF2) DC - 3.0 GHz 45 50 dB DC - 4.0 GHz 42 47 dB DC - 1.0 GHz 23 dB DC - 2.0 GHz 18 dB Return Loss (On State) DC - 3.0 GHz 13 dB DC - 4.0 GHz 8 dB 0.5 - 2.0 GHz 20 dB Return Loss (Off State) 0.5 - 3.0 GHz 17 dB 0.5 - 4.0 GHz 14 dB Input Power for 1 dB Compression 0.25 - 4.0 GHz 27 31 dBm 0.25 - 1.0 GHz 53 dBm Input Third Order Intercept 1.0 - 2.0 GHz 50 dBm (Two-Tone Input Power = +7 dBm Each Tone) 2.0 - 3.0 GHz 49 dBm 3.0 - 4.0 GHz 47 dBm Switching Speed DC - 4.0 GHz tRISE, tFALL (10/90% RF) 40 ns tON, tOFF (50% CTL to 10/90% RF) 120 ns For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 10 - 244 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com

HMC349MS8G / 349MS8GE v02.0607 HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 4 GHz Insertion Loss Return Loss 0 0 -5 -1 RFC B) RF1, RF2 ON SS (d -2 S (dB)-10 RF1, RF2 OFF O S ON L +25C N LO-15 ERTI -3 +-4805CC ETUR-20 S R N I -4 -25 -5 -30 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 FREQUENCY (GHz) FREQUENCY (GHz) 10 Note: RFC is refl ective in “all off” state. Isolation Between Ports RFC and RF1 / RF2 Isolation Between Ports RF1 and RF2 T 0 0 M -10 S -20 RRFF12 -20 - B) ALL OFF B) S d d N ( N (-30 E O-40 O ATI ATI-40 H L L SO SO C I I-50 -60 T -60 I W -80 -70 S 0 1 2 3 4 5 0 1 2 3 4 5 FREQUENCY (GHz) FREQUENCY (GHz) 0.1 and 1 dB Input Compression Point Input Third Order Intercept Point 34 60 Bm) 32 56 ++-428055CCC N (d 30 O SI 28 m) 52 S B E d MPR 26 IP3 ( 48 O T C 24 01. 1d Bd BC oCmomprpersessiosnio nP oPinotint PU 44 N 22 I 20 40 0 1 2 3 4 0 1 2 3 4 FREQUENCY (GHz) FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 10 - 245 Order On-line at www.hittite.com

HMC349MS8G / 349MS8GE v02.0607 HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 4 GHz Absolute Maximum Ratings Bias Voltage & Current RF Input Power (Vctl = 0V/+5V) +30 dBm (T = +85 °C) Vdd Range = +5.0 Vdc ± 10% (0.25 - 4 GHz) Vdd Idd (Typ.) Idd (Max.) Supply Voltage Range (Vdd) +7 Vdc (Vdc) (mA) (mA) Control Voltage Range (Vctl) -1V to Vdd +1V +5.0 2.3 5.0 Hot Switch Power Level +30 dBm (Vdd = +5V) TTL/CMOS Control Voltages Channel Temperature 150 °C Continuous Pdiss (T = 85 °C) State Bias Condition 0.75 W (derate 12 mW/°C above 85 °C) Low 0 to +0.8 Vdc @ <1 μA Typical Thermal Resistance 87 °C/W High +2.0 to +5.0 Vdc @ 30 μA Typical Storage Temperature -65 to +150 °C 10 Operating Temperature -40 to +85 °C Truth Table ESD Sensitivity (HBM) Class 1A Control Input Signal Path State Note: DC blocking capacitors are required at ports RFC, Vctl EN RFC - RF1 RFC - RF2 T RF1 and RF2. Their value will determine the lowest trans- Low Low OFF ON M mission frequency. High Low ON OFF S Low High OFF OFF - ELECTROSTATIC SENSITIVE DEVICE High High OFF OFF S OBSERVE HANDLING PRECAUTIONS E H C T I W S For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 10 - 246 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com

HMC349MS8G / 349MS8GE v02.0607 HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 4 GHz Outline Drawing 10 NOTES: T 1. LEADFRAME MATERIAL: COPPER ALLOY M 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] S 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. - 5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO S PCB RF GROUND. E H C Package Information T I Part Number Package Body Material Lead Finish MSL Rating Package Marking [3] W HMC349MS8G Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] H349 S XXXX HMC349MS8GE RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] H349 XXXX [1] Max peak refl ow temperature of 235 °C [2] Max peak refl ow temperature of 260 °C [3] 4-Digit lot number XXXX For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 10 - 247 Order On-line at www.hittite.com

HMC349MS8G / 349MS8GE v02.0607 HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 4 GHz Pin Descriptions Pin Number Function Description Interface Schematic 1 Vdd Supply Voltage. 2 Vctl Control input. See truth and control voltage tables. 10 3, 5, 8 RFC, RF1, RF2 These pins are DC coupled and matched to 50 Ohms. Blocking capacitors are required. T M 4 EN Enable. See truth and control voltage tables. S - S E Package bottom must also be 6, 7 GND connected to PCB RF ground. H C T I W S For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 10 - 248 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com

HMC349MS8G / 349MS8GE v02.0607 HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 4 GHz Evaluation PCB 10 T M S - S E H C T I W S List of Materials for Evaluation PCB 107662 [1] The circuit board used in the fi nal application Item Description should be generated with proper RF circuit design J1 - J3 PCB Mount SMA RF Connector techniques. Signal lines at the RF port should have J4 - J8 DC Pin 50 ohm impedance and the package ground leads C1 - C3 100 pF Capacitor, 0402 Pkg. and backside ground slug should be connected HMC349MS8G / HMC349MS8GE U1 SPDT Switch directly to the ground plane similar to that shown PCB [2] 107660 Evaluation PCB above. The evaluation circuit board shown above is [1] Reference this number when ordering complete evaluation PCB available from Hittite Microwave Corporation upon [2] Circuit Board Material: Rogers 4350 request. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 10 - 249 Order On-line at www.hittite.com