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  • 型号: HMC197AE
  • 制造商: Hittite
  • 库位|库存: xxxx|xxxx
  • 要求:
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+xxxx $xxxx ¥xxxx

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HMC197AE产品简介:

ICGOO电子元器件商城为您提供HMC197AE由Hittite设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 HMC197AE价格参考。HittiteHMC197AE封装/规格:RF 开关, 射频开关 IC WLAN SPDT 3GHz 50 欧姆 SOT-26。您可以下载HMC197AE参考资料、Datasheet数据手册功能说明书,资料中有HMC197AE 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

射频/IF 和 RFID

描述

IC SWITCH SPDT REFL 3GHZ SOT-26

产品分类

RF 开关

IIP3

43dBm (标准)

品牌

Hittite Microwave Corporation

数据手册

点击此处下载产品Datasheet

产品图片

P1dB

29dBm (标准) IP1dB

产品型号

HMC197AE

RF类型

WLAN

rohs

无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

-

供应商器件封装

SOT-26

其它名称

1127-1301-2
HMC197AETR

包装

带卷 (TR)

封装/外壳

SOT-23-6

工作温度

-40°C ~ 85°C

拓扑

反射

插损@频率

0.8dB @ 3GHz

标准包装

500

特性

-

电压-电源

3 V ~ 8 V

电路

SPDT

配用

/product-detail/zh/101674-HMC197A/1127-1915-ND/3973350

阻抗

50 欧姆

隔离@频率

18dB @ 3GHz (标准)

频率 -上

3GHz

频率 -下

DC

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PDF Datasheet 数据手册内容提取

HMC197A 197AE / v02.1210 GaAs MMIC SOT26 SPDT SwITCh, DC - 3 Ghz Typical Applications Features the hMc197A(e) is ideal for: Low insertion Loss: 0.4 dB • MMDS & wirelessLAN Ultra Small Package: SOt26 • PcMciA wireless cards input iP3: +45 dBm • Portable wireless Positive control: 0/+3V @ 3 µA Functional Diagram General Description the hMc197A(e) is a low-cost SPDt switch in a 6-lead SOt26 plastic package for use in general switching applications which require very low insertion loss and very small size. the device can control sig- nals from Dc to 3 Ghz and is especially suited for 900 Mhz, 1.8 - 2.2 Ghz, and 2.4 Ghz iSM applica- 14 tions with less than 1 dB loss. the design provides exceptional insertion loss performance, ideal for filter and receiver switching. RF1 and RF2 are reflective shorts when “Off”. the two control voltages require a t minimal amount of Dc current and offer compatibility M with most cMOS & ttL logic families. See S hMc221A(e) for same performance in an alternate - SOt26 pin-out. t D P Electrical Specifications, T = +25° C, Vctl = 0/+3 to +8 Vdc, 50 Ohm System A S - Parameter Frequency Min. typ. Max. Units S Dc - 1.0 Ghz 0.4 0.7 dB e Dc - 2.0 Ghz 0.45 0.8 dB insertion Loss h Dc - 2.5 Ghz 0.7 0.9 dB Dc - 3.0 Ghz 0.8 1.1 dB c t Dc - 1.0 Ghz 24 28 dB i Dc - 2.0 Ghz 24 28 dB w isolation Dc - 2.5 Ghz 18 22 dB Dc - 3.0 Ghz 14 18 dB S Dc - 1.0 Ghz 20 30 dB Dc - 2.0 Ghz 16 22 dB Return Loss Dc - 2.5 Ghz 14 17 dB Dc - 3.0 Ghz 10 13 dB input Power for 1dB compression 0.5 - 1.0 Ghz 25 30 dBm (Vctl = 0/+5V) 0.5 - 3.0 Ghz 23 29 dBm input third Order intercept 0.5 - 1.0 Ghz 40 45 dBm (Vctl = 0/+5V) (two-tone input Power = +7 dBm each tone) 0.5 - 3.0 Ghz 38 43 dBm Switching characteristics Dc - 3.0 Ghz tRiSe, tFALL (10/90% RF) 3 ns tON, tOFF (50% ctL to 10/90% RF) 10 ns For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 14 - 1 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com

HMC197A / 197AE v02.1210 GaAs MMIC SOT26 SPDT SwITCh, DC - 3 Ghz Insertion Loss Isolation 0 0 -0.5 -10 B) d OSS ( -1 N (dB) -20 ON L-1.5 ATIO RTI OL -30 SE -2 IS N I -40 -2.5 -3 -50 0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3 FREQUENCY (GHz) FREQUENCY (GHz) Input 0.1 and 1.0 dB Return Loss Compression vs. Control Voltage 14 0 35 1 dB at 1900 MHz -10 1 dB at 900 MHz RETURN LOSS (dB) --3200 P1dB & P0.1dB (dBm) 223050 0.1 dB at 900 MHz - SMt -40 0.1 dB at 1900 MHz t D -50 15 P 0 0.5 1 1.5 2 2.5 3 3 4 5 6 7 8 9 S FREQUENCY (GHz) CONTROL INPUT (V) - S Input Third Order Distortion vs. Control Voltage e Intercept Point vs. Control Voltage h control input third Order intercept (dBm) +7 dBm each tone 54 c (Vdc) 900 Mhz 1900 Mhz t +3 50 49 52 i +5 50 49 w m) 50 +8 51 50 S B 3 (d Truth Table IP 48 *Control Input Voltage Tolerances are ± 0.2 Vdc. control input* control current Signal Path State 900 MHz 46 1900 MHz A B ia ib RF to RF to (Vdc) (Vdc) (µA) (µA) RF1 RF2 44 0 +3 -3 3 ON OFF 2 3 4 5 6 7 8 9 CONTROL INPUT (V) +3 0 3 -3 OFF ON 0 +5 -5 5 ON OFF +5 0 5 -5 OFF ON 0 +8 -32 32 ON OFF +8 0 32 -32 OFF ON For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 14 - 2 Application Support: Phone: 978-250-3343 or apps@hittite.com

HMC197A / 197AE v02.1210 GaAs MMIC SOT26 SPDT SwITCh, DC - 3 Ghz Compression vs. Control Voltage Absolute Maximum Ratings carrier at 900 Mhz carrier at 1900 Mhz control Voltage Range (A & B) -0.2 to +12 Vdc input Power input Power input Power input Power Storage temperature -65 to +150 °c control for 0.1 dB for 1.0 dB for 0.1 dB for 1.0 dB input Operating temperature -40 to +85 °c compression compression compression compression eSD Sensitivity (hBM) class 1A (Vdc) (dBm) (dBm) (dBm) (dBm) +3 21 24 21 24 +5 28 30 27 30 eLectROStAtic SeNSitiVe DeVice OBSeRVe hANDLiNG PRecAUtiONS +8 32 34 31 33 caution: Do not operate in 1dB compression at power levels above +31 dBm (Vctl = +5 Vdc) and do not “hot switch” power levels greater than +20 dBm (Vctl = +5Vdc). Dc blocks are required at ports RFc, RF1 and RF2. 14 Outline Drawing t M S - t D P S - S e h NOteS: 1. LeADFRAMe MAteRiAL: cOPPeR ALLOY c 2. DiMeNSiONS ARe iN iNcheS [MiLLiMeteRS]. t 3. DiMeNSiON DOeS NOt iNcLUDe MOLDFLASh OF 0.15mm PeR SiDe. wi 4. DiMeNSiON DOeS NOt iNcLUDe MOLDFLASh OF 0.25mm PeR SiDe. 5. ALL GROUND LeADS MUSt Be SOLDeReD tO PcB RF GROUND. S Package Information Part Number Package Body Material Lead Finish MSL Rating Package Marking [3] hMc197A Low Stress injection Molded Plastic Sn/Pb Solder MSL1 [1] 197A XXXX hMc197Ae RohS-compliant Low Stress injection Molded Plastic 100% matte Sn MSL1 [2] 197Ae XXXX [1] Max peak reflow temperature of 235 °c [2] Max peak reflow temperature of 260 °c [3] 4-Digit lot number XXXX For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 14 - 3 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com

HMC197A / 197AE v02.1210 GaAs MMIC SOT26 SPDT SwITCh, DC - 3 Ghz Typical Application Circuit Notes: 1. Set logic gate and switch Vdd = +3V to +5V and use hct series logic to provide a ttL driver interface. 2. control inputs A/B can be driven directly with cMOS logic (hc) with Vdd of 5 to 8 Volts applied to the cMOS logic gates. 3. Dc Blocking capacitors are required for each RF port as shown. capacitor value determines lowest frequency of operation. 4. highest RF signal power capability is achieved with Vdd = +8V and A/B set to 0/+8V. Evaluation Circuit Board 14 t M S - t D P S - S e h c t i w S List of Materials for Evaluation PCB 101674 [1] the circuit board used in the final application should item Description be generated with proper RF circuit design tech- J1 - J3 PcB Mount SMA RF connector niques. Signal lines at the RF port should have 50 J4 - J6 Dc Pin Ohm impedance and the package ground leads and c1 - c3 330 pF capacitor, 0603 Pkg. package bottom should be connected directly to the hMc197A / hMc197Ae U1 SPDt Switch ground plane similar to that shown above. the eval- PcB [2] 101658 evaluation PcB uation circuit board shown above is available from [1] Reference this number when ordering complete evaluation PcB hittite Microwave corporation upon request. [2] circuit Board Material: Rogers 4350 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 14 - 4 Application Support: Phone: 978-250-3343 or apps@hittite.com