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  • 型号: PBSS2540MB,315
  • 制造商: NXP Semiconductors
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PBSS2540MB,315产品简介:

ICGOO电子元器件商城为您提供PBSS2540MB,315由NXP Semiconductors设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 PBSS2540MB,315价格参考。NXP SemiconductorsPBSS2540MB,315封装/规格:晶体管 - 双极 (BJT) - 单, 双极 (BJT) 晶体管 NPN 40V 500mA 450MHz 250mW 表面贴装 DFN1006B-3。您可以下载PBSS2540MB,315参考资料、Datasheet数据手册功能说明书,资料中有PBSS2540MB,315 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

TRANS NPN 40V 3DFN两极晶体管 - BJT 40 V, 0.5 A NPN low VCEsat transistor

产品分类

晶体管(BJT) - 单路分离式半导体

品牌

NXP Semiconductors

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

晶体管,两极晶体管 - BJT,NXP Semiconductors PBSS2540MB,315-

数据手册

点击此处下载产品Datasheet

产品型号

PBSS2540MB,315

不同 Ib、Ic时的 Vce饱和值(最大值)

50mV @ 500µA, 10mA

不同 Ic、Vce 时的DC电流增益(hFE)(最小值)

200 @ 10mA,2V

产品种类

两极晶体管 - BJT

供应商器件封装

3-DFN1006B(0.6x1)

其它名称

568-10516-1

功率-最大值

250mW

包装

剪切带 (CT)

发射极-基极电压VEBO

6 V

商标

NXP Semiconductors

增益带宽产品fT

450 MHz

安装类型

表面贴装

安装风格

SMD/SMT

封装

Reel

封装/外壳

3-XFDFN

封装/箱体

SOT-883

工厂包装数量

10000

晶体管极性

NPN

晶体管类型

NPN

最大功率耗散

590 mW

最大工作温度

+ 150 C

最大直流电集电极电流

1 A

最小工作温度

- 55 C

标准包装

1

电压-集射极击穿(最大值)

40V

电流-集电极(Ic)(最大值)

500mA

电流-集电极截止(最大值)

100µA (ICBO)

直流集电极/BaseGainhfeMin

200

配置

Single

集电极—发射极最大电压VCEO

40 V

集电极—基极电压VCBO

40 V

集电极—射极饱和电压

250 mV

集电极连续电流

500 mA

频率-跃迁

450MHz

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PDF Datasheet 数据手册内容提取

PBSS2540MB 40 V, 0.5 A NPN low VCEsat (BISS) transistor Rev. 1 — 4 April 2012 Product data sheet 1. Product profile 1.1 General description NPN low V Breakthrough In Small Signal (BISS) transistor in a leadless ultra small CEsat DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS3540MB. 1.2 Features and benefits  Leadless ultra small SMD plastic  High efficiency due to less heat package generation  Low package height of 0.37 mm  AEC-Q101 qualified  Low collector-emitter saturation  Reduced Printed-Circuit Board (PCB) voltage V requirements CEsat  High collector current capability I and C I CM 1.3 Applications  DC-to-DC conversion  LCD backlighting  Supply line switching  Drivers in low supply voltage applications (e.g. lamps and LEDs)  Battery charger 1.4 Quick reference data Table 1. Quick refere nce data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - 40 V CEO voltage I collector current - - 500 mA C I peak collector current single pulse; t ≤1ms - - 1 A CM p R collector-emitter I =500mA; I =50mA; pulsed; - 380 500 mΩ CEsat C B saturation resistance t ≤300µs; δ≤0.02; T =25°C p amb

PBSS2540MB Nexperia 40 V, 0.5 A NPN low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning infor mation Pin Symbol Description Simplified outline Graphic symbol 1 B base 2 E emitter 1 3 3 3 C collector 2 1 Transparent top view 2 SOT883B (DFN1006B-3) sym021 3. Ordering information Table 3. Ordering info rmation Type number Package Name Description Version PBSS2540MB DFN1006B-3 Leadless ultra small plastic package; 3 solder lands; SOT883B body 1.0 x 0.6 x 0.37 mm 4. Marking Table 4. Marking cod es Type number Marking code PBSS2540MB 0001 0010 PIN 1 INDICATION READING DIRECTION READING EXAMPLE: 0111 1011 MARKING CODE (EXAMPLE) READING DIRECTION 006aac673 Fig 1. DFN1006B-3 (SOT883B) binary marking code description PBSS2540MB All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 — 4 April 2012 2 of 12

PBSS2540MB Nexperia 40 V, 0.5 A NPN low VCEsat (BISS) transistor 5. Limiting values Table 5. Limiting valu es In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 40 V CBO V collector-emitter voltage open base - 40 V CEO V emitter-base voltage open collector - 6 V EBO I collector current - 500 mA C I peak collector current single pulse; t ≤1ms - 1 A CM p I peak base current single pulse; t ≤1ms - 100 mA BM p P total power dissipation T ≤25°C [1][2] - 250 mW tot amb [3][2] - 590 mW T junction temperature - 150 °C j T ambient temperature -55 150 °C amb T storage temperature -65 150 °C stg [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. PBSS2540MB All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 — 4 April 2012 3 of 12

PBSS2540MB Nexperia 40 V, 0.5 A NPN low VCEsat (BISS) transistor 6. Thermal characteristics Table 6. Thermal cha racteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance in free air [1][2] - - 500 K/W th(j-a) from junction to [3][2] - - 212 K/W ambient [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. 103 006aab603 duty cycle = Zth(j-a) 1 (K/W) 0.75 0.5 0.33 102 0.2 0.1 0.05 0.02 10 0.01 0 1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 103 006aac985 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.5 0.33 0.2 0.1 0.05 10 0.02 0 0.01 1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 1 cm2 Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS2540MB All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 — 4 April 2012 4 of 12

PBSS2540MB Nexperia 40 V, 0.5 A NPN low VCEsat (BISS) transistor 7. Characteristics Table 7. Characterist ics Symbol Parameter Conditions Min Typ Max Unit I collector-base cut-off V =30V; I =0A; T =25°C - - 100 nA CBO CB E amb current V =30V; I =0A; T =150°C - - 50 µA CB E j I emitter-base cut-off V =5V; I =0A; T =25°C - - 100 nA EBO EB C amb current h DC current gain V =2V; I =10mA; T =25°C 200 - - FE CE C amb V =2V; I =100mA; pulsed; 150 - - CE C t ≤300µs; δ≤0.02; T =25°C p amb V =2V; I =500mA; pulsed; 50 - - CE C t ≤300µs; δ≤0.02; T =25°C p amb V collector-emitter I =10mA; I =0.5mA; T =25°C - - 50 mV CEsat C B amb saturation voltage I =100mA; I =5mA; pulsed; - - 100 mV C B t ≤300µs; δ≤0.02; T =25°C p amb I =200mA; I =10mA; pulsed; - - 200 mV C B t ≤300µs; δ≤0.02; T =25°C p amb I =500mA; I =50mA; pulsed; - - 250 mV C B t ≤300µs; δ≤0.02; T =25°C p amb R collector-emitter I =500mA; I =50mA; pulsed; - 380 500 mΩ CEsat C B saturation resistance t ≤300µs; δ≤0.02; T =25°C p amb V base-emitter saturation I =500mA; I =50mA; pulsed; - - 1.2 V BEsat C B voltage t ≤300µs; δ≤0.02; T =25°C p amb V base-emitter turn-on V =2V; I =100mA; pulsed; - - 1.1 V BEon CE C voltage t ≤300µs; δ≤0.02; T =25°C p amb f transition frequency V =5V; I =100mA; f=100MHz; 250 450 - MHz T CE C T =25°C amb C collector capacitance V =10V; I =0A; i =0A; - - 6 pF c CB E e f=1MHz; T =25°C amb PBSS2540MB All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 — 4 April 2012 5 of 12

PBSS2540MB Nexperia 40 V, 0.5 A NPN low VCEsat (BISS) transistor 1200 mhc082 1.2 006aac996 hFE IB (mA) =2 22.55 1000 (IAC) 20 17.5 (1) 15 800 0.8 12.5 10 7.5 600 5 (2) 2.5 400 0.4 (3) 200 0 0.0 10−1 1 10 102 103 0 1 2 3 4 5 IC (mA) VCE (V) VCE = 2 V Tamb = 25 °C (1) T = 150 °C amb (2) T = 25 °C amb (3) T = -55 °C amb Fig 4. DC current gain as a function of collector Fig 5. Collector current as a function of current; typical values collector-emitter voltage; typical values mhc085 mhc084 1200 1200 VBE VBEsat (mV) (mV) 1000 1000 (1) 800 (1) 800 (2) (2) 600 600 (3) 400 400 (3) 200 200 10−1 1 10 102 103 10−1 1 10 102 103 IC (mA) IC (mA) V = 2 V I /I = 20 CE C B (1) T = -55 °C (1) T = 150 °C amb amb (2) T = 25 °C (2) T = 25 °C amb amb (3) T = 150 °C (3) T = -55 °C amb amb Fig 6. Base-emitter voltage as a function of collector Fig 7. Base-emitter saturation voltage as a function of current; typical values collector current; typical values PBSS2540MB All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 — 4 April 2012 6 of 12

PBSS2540MB Nexperia 40 V, 0.5 A NPN low VCEsat (BISS) transistor 103 mhc086 103 mhc087 RCEsat VCEsat (Ω) (mV) 102 102 10 (1) (1) (2) (3) 1 (2) (3) 10 10−1 10−1 1 10 102 103 10−1 1 10 102 103 IC (mA) IC (mA) I /I = 20 I /I = 20 C B C B (1) T = 150 °C (1) T = 150 °C amb amb (2) T = 25 °C (2) T = 25 °C amb amb (3) T = -55 °C (3) T = -55 °C amb amb Fig 8. Collector-emitter saturation voltage as a Fig 9. Collector-emitter saturation resistance as a function of collector current; typical values function of collector current; typical values 8. Test information 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PBSS2540MB All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 — 4 April 2012 7 of 12

PBSS2540MB Nexperia 40 V, 0.5 A NPN low VCEsat (BISS) transistor 9. Package outline 0.65 0.55 0.40 0.35 0.34 0.20 0.04 max 0.12 1 2 0.30 0.22 1.05 0.65 0.95 0.30 0.22 3 0.55 0.47 Dimensions in mm 11-11-02 Fig 10. Package outline SOT883B (DFN1006B-3) 10. Soldering Footprint information for reflow soldering SOT883B 1.3 0.7 R0.05 (8x) 0.9 0.6 0.7 0.25 (2x) 0.3 0.3 (2x) 0.4 0.4 (2x) solder land solder land plus solder paste solder paste deposit solder resist occupied area Dimensions in mm sot883b_fr Fig 11. Reflow soldering footprint for SOT883B (DFN1006B-3) PBSS2540MB All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 — 4 April 2012 8 of 12

PBSS2540MB Nexperia 40 V, 0.5 A NPN low VCEsat (BISS) transistor 11. Revision history Table 8. Revision his tory Document ID Release date Data sheet status Change notice Supersedes PBSS2540MB v.1 20120404 Product data sheet - - PBSS2540MB All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 — 4 April 2012 9 of 12

PBSS2540MB Nexperia 40 V, 0.5 A NPN low VCEsat (BISS) transistor 12. Legal information 12.1 Data sheet status Document status[1] [2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nexperia.com. 12.2 Definitions Right to make changes — Nexperia reserves the right to make changes to information published in this document, including without Preview — The document is a preview version only. The document is still limitation specifications and product descriptions, at any time and without subject to formal approval, which may result in modifications or additions. notice. This document supersedes and replaces all information supplied prior Nexperia does not give any representations or warranties as to to the publication hereof. the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Suitability for use — Nexperia products are not designed, authorized or warranted to be suitable for use in life support, life-critical or Draft — The document is a draft version only. The content is still under safety-critical systems or equipment, nor in applications where failure or internal review and subject to formal approval, which may result in malfunction of a Nexperia product can reasonably be expected modifications or additions. Nexperia does not give any to result in personal injury, death or severe property or environmental representations or warranties as to the accuracy or completeness of damage. Nexperia and its suppliers accept no liability for information included herein and shall have no liability for the consequences of inclusion and/or use of Nexperia products in such equipment or use of such information. applications and therefore such inclusion and/or use is at the customer’s own risk. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended Quick reference data — The Quick reference data is an extract of the for quick reference only and should not be relied upon to contain detailed and product data given in the Limiting values and Characteristics sections of this full information. For detailed and full information see the relevant full data document, and as such is not complete, exhaustive or legally binding. sheet, which is available on request via the local Nexperia sales office. In case of any inconsistency or conflict with the short data sheet, the Applications — Applications that are described herein for any of these full data sheet shall prevail. products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the Product specification — The information and data provided in a Product specified use without further testing or modification. data sheet shall define the specification of the product as agreed between Nexperia and its customer, unless Nexperia and Customers are responsible for the design and operation of their applications customer have explicitly agreed otherwise in writing. In no event however, and products using Nexperia products, and Nexperia shall an agreement be valid in which the Nexperia product is accepts no liability for any assistance with applications or customer product deemed to offer functions and qualities beyond those described in the design. It is customer’s sole responsibility to determine whether the Nexperia Product data sheet. product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate 12.3 Disclaimers design and operating safeguards to minimize the risks associated with their applications and products. Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, Nexperia does not give any Nexperia does not accept any liability related to any default, representations or warranties, expressed or implied, as to the accuracy or damage, costs or problem which is based on any weakness or default in the completeness of such information and shall have no liability for the customer’s applications or products, or the application or use by customer’s consequences of use of such information. Nexperia takes no third party customer(s). Customer is responsible for doing all necessary responsibility for the content in this document if provided by an information testing for the customer’s applications and products using Nexperia source outside of Nexperia. products in order to avoid a default of the applications and the products or of the application or use by customer’s third party In no event shall Nexperia be liable for any indirect, incidental, customer(s). Nexperia does not accept any liability in this respect. punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or Limiting values — Stress above one or more limiting values (as defined in replacement of any products or rework charges) whether or not such the Absolute Maximum Ratings System of IEC 60134) will cause permanent damages are based on tort (including negligence), warranty, breach of damage to the device. Limiting values are stress ratings only and (proper) contract or any other legal theory. operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Notwithstanding any damages that customer might incur for any reason Characteristics sections of this document is not warranted. Constant or whatsoever, Nexperia’s aggregate and cumulative liability towards repeated exposure to limiting values will permanently and irreversibly affect customer for the products described herein shall be limited in accordance the quality and reliability of the device. with theTerms and conditions of commercial sale of Nexperia. PBSS2540MB All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 — 4 April 2012 10 of 12

PBSS2540MB Nexperia 40 V, 0.5 A NPN low VCEsat (BISS) transistor Terms and conditions of commercial sale — Nexperia product for such automotive applications, use and specifications, and (b) products are sold subject to the general terms and conditions of commercial whenever customer uses the product for automotive applications beyond sale, as published at http://www.nexperia.com/profile/terms, unless otherwise Nexperia’s specifications such use shall be solely at customer’s agreed in a valid written individual agreement. In case an individual own risk, and (c) customer fully indemnifies Nexperia for any agreement is concluded only the terms and conditions of the respective liability, damages or failed product claims resulting from customer design and agreement shall apply. Nexperia hereby expressly objects to use of the product for automotive applications beyond Nexperia’s applying the customer’s general terms and conditions with regard to the standard warranty and Nexperia’s product specifications. purchase of Nexperia products by customer. Translations — A non-English (translated) version of a document is for No offer to sell or license — Nothing in this document may be interpreted or reference only. The English version shall prevail in case of any discrepancy construed as an offer to sell products that is open for acceptance or the grant, between the translated and English versions. conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.4 Trademarks Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior Notice: All referenced brands, product names, service names and trademarks authorization from competent authorities. are the property of their respective owners. Non-automotive qualified products — Unless this data sheet expressly states that this specific Nexperia product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Nexperia accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Nexperia’s warranty of the 13. Contact information For more information, please visit:http://www.nexperia.com For sales office addresses, please send an email to:salesaddresses@nexperia.com PBSS2540MB All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 — 4 April 2012 11 of 12

PBSS2540MB Nexperia 40 V, 0.5 A NPN low VCEsat (BISS) transistor 14. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 General description . . . . . . . . . . . . . . . . . . . . . .1 1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2 3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2 4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 6 Thermal characteristics . . . . . . . . . . . . . . . . . . .4 7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5 8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . .7 8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . .7 9 Package outline. . . . . . . . . . . . . . . . . . . . . . . . . .8 10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . .9 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . .10 12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .10 12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .10 12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .11 13 Contact information. . . . . . . . . . . . . . . . . . . . . .11 © Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 04 April 2012