ICGOO在线商城 > 分立半导体产品 > 晶体管 - 双极 (BJT) - 单 > MPSA20
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MPSA20产品简介:
ICGOO电子元器件商城为您提供MPSA20由Central Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 MPSA20价格参考。Central SemiconductorMPSA20封装/规格:晶体管 - 双极 (BJT) - 单, 双极 (BJT) 晶体管 NPN 40V 100mA 125MHz 625mW 通孔 TO-92-3。您可以下载MPSA20参考资料、Datasheet数据手册功能说明书,资料中有MPSA20 详细功能的应用电路图电压和使用方法及教程。
MPSA20是一款由安森美半导体(ON Semiconductor)生产的通用型NPN双极结型晶体管(BJT),常用于低频、中等频率范围的信号放大和开关应用。 典型应用场景包括: 1. 音频放大电路:MPSA20常用于前置音频放大器中,因其具有良好的线性特性和中等增益,适合处理音频信号的放大。 2. 开关电路:由于其具备较高的集电极电流(最高可达150mA)和较好的开关特性,MPSA20广泛用于小型继电器、LED、小型电机等负载的开关控制。 3. 数字逻辑接口:在数字电路中作为电平转换或驱动元件,将微控制器或逻辑IC的输出信号放大以驱动更高功率的外围设备。 4. 传感器信号调理:用于传感器信号的放大与处理电路中,特别是在工业控制和测量设备中。 5. 射频(RF)前端电路:虽然主要用于低频应用,但在低功率射频电路中也可作为信号放大元件使用。 6. 消费类电子产品:如玩具、小家电、遥控器等产品中作为基础放大或开关元件。 该晶体管采用TO-92封装,便于插装和焊接,适合广泛应用场景。其性价比高、性能稳定,是电子设计中常用的通用晶体管之一。
| 参数 | 数值 |
| 品牌 | Central Semiconductor |
| 产品目录 | 半导体 |
| 描述 | 两极晶体管 - BJT NPN Gen Pur SS |
| 产品分类 | 分离式半导体 |
| 产品手册 | |
| 产品图片 |
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| rohs | 符合RoHS |
| 产品系列 | 晶体管,两极晶体管 - BJT,Central Semiconductor MPSA20 |
| 产品型号 | MPSA20 |
| 产品种类 | 两极晶体管 - BJT |
| 发射极-基极电压VEBO | 4 V |
| 商标 | Central Semiconductor |
| 增益带宽产品fT | 125 MHz |
| 安装风格 | Through Hole |
| 封装 | Bulk |
| 封装/箱体 | TO-92 |
| 工厂包装数量 | 2500 |
| 晶体管极性 | NPN |
| 最大功率耗散 | 625 mW |
| 最大工作温度 | + 150 C |
| 最大直流电集电极电流 | 0.1 A |
| 最小工作温度 | - 65 C |
| 直流集电极/BaseGainhfeMin | 40 |
| 系列 | MPSA20 |
| 配置 | Single |
| 集电极—发射极最大电压VCEO | 40 V |
| 集电极—基极电压VCBO | 4 V |
| 集电极—射极饱和电压 | 0.25 V |
| 集电极连续电流 | 0.45 A |
MPSA20 NPN MPSA70 PNP www.centralsemi.com COMPLEMENTARY DESCRIPTION: SILICON TRANSISTORS The CENTRAL SEMICONDUCTOR MPSA20 and MPSA70 are complementary silicon transistors designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 4.0 V Continuous Collector Current IC 100 mA Power Dissipation PD 625 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance JA 200 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS MIN MAX UNITS ICBO VCB=30V 100 nA BVCEO IC=1.0mA 40 V BVEBO IE=100μA 4.0 V VCE(SAT) IC=10mA, IB=1.0mA 0.25 V hFE VCE=10V, IC=5.0mA 40 400 fT VCE=10V, IC=5.0mA, f=100MHz 125 MHz Cob VCB=10V, IE=0, f=100kHz 4.0 pF R1 (18-March 2014)
MPSA20 NPN MPSA70 PNP COMPLEMENTARY SILICON TRANSISTORS TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (18-March 2014) www.centralsemi.com
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