MMBTA63LT1G, MMBTA64LT1G, SMMBTA64LT1G Darlington Transistors PNP Silicon www.onsemi.com Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS SOT−23 (TO−236) Compliant CASE 318 STYLE 6 MAXIMUM RATINGS COLLECTOR 3 Rating Symbol Value Unit BASE Collector−Emitter Voltage VCES −30 Vdc 1 Collector−Base Voltage VCBO −30 Vdc EMITTER 2 Emitter−Base Voltage VEBO −10 Vdc MARKING DIAGRAM Collector Current − Continuous IC −500 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 2x M(cid:2) (cid:2) Total Device Dissipation FR−5 Board, PD (Note 1) TA = 25°C 225 mW 1 Derate above 25°C 1.8 mW/°C 2x =Device Code Thermal Resistance, Junction−to−Ambient R(cid:2)JA 556 °C/W x = U for MMBTA63LT1G Total Device Dissipation PD x = V for MMBTA64LT1G Alumina Substrate, (Note 2) SMMBTA64LT1G TA = 25°C 300 mW M = Date Code* Derate above 25°C 2.4 mW/°C (cid:2) = Pb−Free Package Thermal Resistance, Junction−to−Ambient R(cid:2)JA 417 °C/W (Note: Microdot may be in either location) *Date Code orientation and/or overbar may Junction and Storage Temperature TJ, Tstg −55 to +150 °C vary depending upon manufacturing location. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION 1. FR−5 = 1.0 x 0.75 x 0.062 in. Device Package Shipping† 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. MMBTA63LT1G SOT−23 3,000 / Tape & Reel (Pb−Free) MMBTA64LT1G SOT−23 3,000 / Tape & Reel (Pb−Free) SMMBTA64LT1G SOT−23 3,000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: October, 2016 − Rev. 6 MMBTA63LT1/D

MMBTA63LT1G, MMBTA64LT1G, SMMBTA64LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage V(BR)CEO Vdc (IC = −100 (cid:3)Adc) −30 − Collector Cutoff Current ICBO nAdc (VCB = −30 Vdc) − −100 Emitter Cutoff Current IEBO nAdc (VEB = −10 Vdc) − −100 ON CHARACTERISTICS DC Current Gain (Note 3) hFE − (IC = −10 mAdc, VCE = −5.0 Vdc) MMBTA63 5,000 − (IC = −10 mAdc, VCE = −5.0 Vdc) MMBTA64, SMMBTA64 10,000 − (IC = −100 mAdc, VCE = −5.0 Vdc) MMBTA63 10,000 − (IC = −100 mAdc, VCE = −5.0 Vdc) MMBTA64, SMMBTA64 20,000 − Collector−Emitter Saturation Voltage VCE(sat) Vdc (IC = −100 mAdc, IB = −0.1 mAdc) − −1.5 Base − Emitter On Voltage VBE(on) Vdc (IC = −100 mAdc, VCE = −5.0 Vdc) − −2.0 SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product fT MHz (IC = −10 mAdc, VCE = −5.0 Vdc, f = 100 MHz) 125 − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width ≤300(cid:3)s, Duty Cycle ≤2.0%. www.onsemi.com 2

MMBTA63LT1G, MMBTA64LT1G, SMMBTA64LT1G 200 TA = 125°C 100 K) 0 70 1. N (X 50 -10 V GAI 30 25°C NT 20 VCE = -2.0 V E R -5.0 V R U C 10 C D 7.0 , E 5.0 -55°C F h 3.0 2.0 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain -2.0 S) -2.0 -1.6 TA = 25°C VBE(sat) @ IC/IB = 100 GE (VOLT -1.8 TA = 25°C A TS) OLT -1.6 AGE (VOL -1.2 VBE(on) @ VCE = -5.0 V MITTER V -1.4 IC = -10 mA -50 mA -100 mA -175 mA -300 mA OLT -0.8 VCE(sat) @ IC/IB = 1000 R-E -1.2 V, V IC/IB = 100 CTO -1.0 E -0.4 LL O C -0.8 , E C 0 V -0.6 -0.3-0.5 -1.0 -2 -3 -5 -10 -20-30 -50 -100 -200-300 -0.1-0.2-0.5-1 -2 -5 -10-20 -50-100-200-500-1K-2K -5K-10K IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT ((cid:3)A) Figure 3. “On” Voltage Figure 2. Collector Saturation Region 10 1 N 1 ms GAI VCE = -5.0 V RENT 43..00 fT A= =1 0205 °MCHz T (A) 10 ms UR 2.0 EN 0.1 100 ms C R Y UR 1 s C C EN 1.0 R U O Q T H FRE 0.4 OLLEC (cid:2)0.01 Thermal Limit G C HI , C |, E 0.2 I Single Pulse Test hF @ TA = 25°C | 0.1 0.001 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -1K 0.01 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 4. High Frequency Current Gain Figure 5. Safe Operating Area www.onsemi.com 3

MMBTA63LT1G, MMBTA64LT1G, SMMBTA64LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. 0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF 3 THE BASE MATERIAL. E HE T 4. DPRIMOETNRSUIOSINOSN DS, AONRD G EA DTEO BNUORTR INS.CLUDE MOLD FLASH, 1 2 MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX L A 0.89 1.00 1.11 0.035 0.039 0.044 3Xb L1 A1 0.01 0.06 0.10 0.000 0.002 0.004 b 0.37 0.44 0.50 0.015 0.017 0.020 e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008 TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120 E 1.20 1.30 1.40 0.047 0.051 0.055 e 1.78 1.90 2.04 0.070 0.075 0.080 L 0.30 0.43 0.55 0.012 0.017 0.022 A L1 0.35 0.54 0.69 0.014 0.021 0.027 HE 2.10 2.40 2.64 0.083 0.094 0.104 T 0° −−− 10° 0° −−− 10° A1 SIDE VIEW SEE VIEW C c STYLE 6: PIN 1. BASE END VIEW 2. EMITTER 3. COLLECTOR RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 0.90 3X0.80 0.95 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative ◊ www.onsemi.com MMBTA63LT1/D 4

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