Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

P N 1 0 October 2008 0 / P N 1 PN100/PN100A/MMBT100/MMBT100A 0 0 A NPN General Purpose Amplifier / M M • This device is designed for general purpose amplifier applications at collector currents to 300mA. B • Sourced from process 10. T 1 0 0 / M C M B T E 1 0 1 TO-92 B SOT-23 0A 1. Emitter 2. Base 3. Collector — Mark: PN100/PN100A N P Absolute Maximum Ratings* N Ta = 25°C unless otherwise noted G e Symbol Parameter Ratings Units n e V Collector-Emitter Voltage 45 CEO r a VCBO Collector-Base Voltage 75 l V Emitter-Base Voltage 6.0 P EBO u IC Collector current - Continuous 500 rp TJ, Tstg Junction and Storage Temperature -55 ~ +150 o s e * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. A NOTES: m 1. These ratings are based on a maximum junction temperature of 150 degrees C. p 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. l i * Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% f i e r Thermal Characteristics T =25°C unless otherwise noted A Max. Symbol Parameter PN100 *MMBT100 Units PN100A *MMBT100A P Total Device Dissipation 625 350 mW D Derate above 25°C 5.0 2.8 mW/°C R Thermal Resistance, Junction to Case 83.3 °C/W θJC R Thermal Resistance, Junction to Ambient 200 357 °C/W θJA * Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06." © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com PN100/PN100A/MMBT100/MMBT100A Rev. C1 1

P N Electrical Characteristics T =25°C unless otherwise noted 1 C 0 0 Symbol Parameter Test Condition Min. Max. Units / P Off Characteristics N BV Collector-Base Breakdown Voltage I = 10μA, I = 0 75 V 1 CBO C E 0 BVCEO Collector-Emitter Breakdown Voltage * IC = 1mA, IB = 0 45 V 0 A BV Emitter-Base Breakdown Voltage I = 10μA, I = 0 6.0 V EBO E C / M I Collector-Base Cutoff Current V = 60V 50 nA CBO CB M I Collector-Emiitter Cutoff Current V = 40V 50 nA CES CE B I Emitter Cutoff Current V = 4V 50 nA T EBO EB 1 On Characteristics 0 0 h DC Current Gain I = 100μA, V = 1.0V 100 80 FE C CE / M 100A 240 M I = 10mA, V = 1.0V 100 100 450 C CE B 100A 300 600 T IC = 100mA, VCE = 1.0V* 100 1 I = 150mA, V = 5.0V * 100 100 350 0 C CE 0 100A 100 A VCE(sat) Collector-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA 0.2 V — I = 200mA, I = 20mA 0.4 V C B N V Base-Emitter Saturation Voltage I = 10mA, I = 1.0mA 0.85 V BE(sat) C B P IC = 200mA, IB = 20mA 1.0 V N Small Signal Characteristics G f Current Gain Bandwidth Product V = 20V, I = 20mA 250 MHz e T CE C n Cobo Output Capacitance VCB = 5.0V, f = 1.0MHz 4.5 pF e r NF Noise Figure IC = 100μA, VCE = 5.0V 100 5.0 dB a RG = 2.0kΩ, f = 1.0KHz 100A 4.0 dB l P * Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0% u r p o s e A m p l i f i e r © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com PN100/PN100A/MMBT100/MMBT100A Rev. C1 2

P N Typical Characteristics 1 0 0 / P N T GAIN400 vs Collector Current Vce = 5V AGE (V)0.4 Voltage vs Collector Current 100A URREN300 125 °C R VOLT0.3 β = 10 /MM LSED C200 25 °C EMITTE0.2 25 °C BT10 L PU - 40 °C TOR- 0/M A100 C 125 °C h - TYPICFE 010 2I0 C - C3O0LLEC50TOR CU1R00RENT 2(m00A)300 500 V - COLLECESAT0.11 I C - COLL1E0CTOR CURRENT1 0(m0 -A 4)0 °C 400 MBT100 A Figure 1. Typical Pulsed Current Gain Figure 2. Collector-Emitter Saturation Voltage — vs Collector Current vs Collector Current N P Base-Emitter Saturation N Collector Current V) Voltage vs Collector Current V) G E ( E ( e AG AG 1 n LT 1 LT e O O r TTER V0.8 - 40 °C R ON V0.8 - 40 °C al Pu OR-EMI0.6 25 °C 125 °C MITTE0.6 25 °C 125 °C rpo V - COLLECTBESAT00..240.1 I C - C1OLLECTOR CU1R0RENT (mβA )=1 1000 300 V - BASE-EBEON00..24 1 I C - CVO CL EL E=C 51TV0OR CURRENT 1(m00A) 500 se Amplifie r Figure 3. Base-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage vs Collector Current vs Collector Current 100 A) 10 T (n V C B = 60V f = 1.0 MHz EN F) R p CUR CE ( 10 Cib CTOR 1 CITAN Cob LE PA 1 L A O C C I - CBO0.1 0.1 25 50 75 100 125 150 0.1 1 10 100 TA - AMBIENT TEMPERATURE ( ° C) Vc e - COLLECTOR VOLTAGE (V) Figure 5. Collector Cutoff Current Figure 6. Input and Output Capacitance vs Ambient Temperature vs Reverse Voltag © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com PN100/PN100A/MMBT100/MMBT100A Rev. C1 3

P N Typical Characteristics 1 (Continued) 0 0 / P N 300 700 1 270 ts mW)600 00 221400 ON (500 TO-92 A/M E (nS)115800 IB1V = c Ic B 2= =1 0Ic V / 10 SSIPATI400 SOT-23 MB TIM120 R DI300 T1 90 tf tr OWE200 00 60 P / 30 td P - D100 MM 010 20 30 50 100 200 300 00 25 50 75 100 125 150 B I C - COLLECTOR CURRENT (mA) TEMPERATURE ( o C) T1 0 Figure 7. Switching Times vs Figure 8. Power Dissipation vs 0 A Collector Current Ambient Temperature — N P N G e n e r a l P u r p o s e A m p l i f i e r © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com PN100/PN100A/MMBT100/MMBT100A Rev. C1 4

P N Package Dimension (TO92) 1 0 0 / P N 1 0 0 A / M M B T 1 0 0 / M M B T 1 0 0 A — N P N G e n e r a l P u r p o s e A m p l i f i e r © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com PN100/PN100A/MMBT100/MMBT100A Rev. C1 5

P N Package Dimension (SOT23) 1 0 0 / P N 1 0 0 A / M M B T 1 0 0 / M M B T 1 0 0 A — N P N G e n e r a l P u r p o s e A m p l i f i e r © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com PN100/PN100A/MMBT100/MMBT100A Rev. C1 6

PP NN 11 00 00 // PP NN 11 00 00 TRADEMARKS AA The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and // MM is not intended to be an exhaustive list of all such trademarks. MM ACEx® Green FPS™ Power247® SuperSOT™-8 BB Build it Now™ Green FPS™ e-Series™ POWEREDGE® SyncFET™ TT CorePLUS™ GTO™ Power-SPM™ The Power Franchise® 11 00 CROSSVOLT™ i-Lo™ PowerTrench® 00 CTL™ IntelliMAX™ Programmable Active Droop™ /M/M Current Transfer Logic™ ISOPLANAR™ QFET® TinyBoost™ MM EcoSPARK® MegaBuck™ QS™ TinyBuck™ BB MICROCOUPLER™ QT Optoelectronics™ TinyLogic® TT Fairchild® MicroFET™ Quiet Series™ TINYOPTO™ 11 00 Fairchild Semiconductor® MicroPak™ RapidConfigure™ TinyPower™ 00 AA FACT Quiet Series™ MillerDrive™ SMART START™ TinyPWM™ FACT® Motion-SPM™ SPM® TinyWire™ N FAST® OPTOLOGIC® STEALTH™ µSerDes™ P FastvCore™ OPTOPLANAR® SuperFET™ UHC® N FPS™ ® SuperSOT™-3 UniFET™ G FRFET® PDP-SPM™ SuperSOT™-6 VCX™ e Global Power ResourceSM Power220® n e r a l P DISCLAIMER u FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS r p HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF o THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE s e UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF A FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE m PRODUCTS. p l i f i LIFE SUPPORT POLICY e r FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, or device or system whose failure to perform can be reasonably (b) support or sustain life, and (c) whose failure to perform expected to cause the failure of the life support device or when properly used in accordance with instructions for use system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition This datasheet contains the design specifications for product development. Advance Information Formative or In Design Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be pub- Preliminary First Production lished at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves No Identification Needed Full Production the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontin- Obsolete Not In Production ued by Fairchild semiconductor. The datasheet is printed for reference infor- mation only. Rev. I31 © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com PN100/PN100A/MMBT100/MMBT100A Rev. C1 7

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative © Semiconductor Components Industries, LLC www.onsemi.com www.onsemi.com 1

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