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2 S A 1 January 2009 9 4 3 / F 2SA1943/FJL4215 J L 4 PNP Epitaxial Silicon Transistor 2 1 5 — Applications P N • High-Fidelity Audio Output Amplifier P • General Purpose Power Amplifier E p Features i t a • High Current Capability: I = -17A. x C i • High Power Dissipation : 150watts. TO-264 a 1 l • High Frequency : 30MHz. S 1.Base 2.Collector 3.Emitter • High Voltage : VCEO= -250V ili • Wide S.O.A for reliable operation. c o • Excellent Gain Linearity for low THD. n • Complement to 2SC5200/FJL4315. T • Full thermal and electrical Spice models are available. r a • Same transistor is also available in: n -- TO3P package, 2SA1962/FJA4213 : 130 watts s i -- TO220 package, FJP1943 : 80 watts s t -- TO220F package, FJPF1943 : 50 watts o r Absolute Maximum Ratings* Ta = 25°C unless otherwise noted Symbol Parameter Ratings Units BV Collector-Base Voltage -250 V CBO BV Collector-Emitter Voltage -250 V CEO BV Emitter-Base Voltage -5 V EBO I Collector Current -17 A C I Base Current -1.5 A B P Total Device Dissipation(T =25°C) 150 W D C Derate above 25°C 1.04 W/°C T , T Junction and Storage Temperature - 50 ~ +150 °C J STG * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics* Ta=25°C unless otherwise noted Symbol Parameter Max. Units R Thermal Resistance, Junction to Case 0.83 °C/W θJC * Device mounted on minimum pad size h Classification FE Classification R O h 55 ~ 110 80 ~ 160 FE1 © 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com 2SA1943/FJL4215 Rev. C 1

2 S Electrical Characteristics* A Ta=25°C unless otherwise noted 1 9 Symbol Parameter Test Condition Min. Typ. Max. Units 4 3 / BV Collector-Base Breakdown Voltage I =-5mA, I =0 -250 V F CBO C E J L BVCEO Collector-Emitter Breakdown Voltage IC=-10mA, RBE=∞ -250 V 4 2 BV Emitter-Base Breakdown Voltage I =-5mA, I =0 -5 V 1 EBO E C 5 I Collector Cut-off Current V =-230V, I =0 -5.0 µA — CBO CB E P I Emitter Cut-off Current V =-5V, I =0 -5.0 µA EBO EB C N P h DC Current Gain V =-5V, I =-1A 55 160 FE1 CE C E h DC Current Gain V =-5V, I =-7A 35 60 p FE2 CE C i t a VCE(sat) Collector-Emitter Saturation Voltage IC=-8A, IB=-0.8A -0.4 -3.0 V x i a VBE(on) Base-Emitter On Voltage VCE=-5V, IC=-7A -1.0 -1.5 V l S f Current Gain Bandwidth Product V =-5V, I =-1A 30 MHz i T CE C l i c C Output Capacitance V =-10V, f=1MHz 360 pF o ob CB n * Pulse Test: Pulse Width=20µs, Duty Cycle≤2% T r a n s Ordering Information is t o Part Number Marking Package Packing Method Remarks r 2SA1943RTU A1943R TO-264 TUBE hFE1 R grade 2SA1943OTU A1943O TO-264 TUBE hFE1 O grade FJL4215RTU J4215R TO-264 TUBE hFE1 R grade FJL4215OTU J4215O TO-264 TUBE hFE1 O grade © 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com 2SA1943/FJL4215 Rev. C 2

2 S Typical Characteristics A 1 9 4 3 / F J -20 I = -900mA L I = -1A B CURRENT ---111468 B IIBIB B = == -- 6-54000000mmmAAAIIBB == --870000mmAA GAIN 100 Tj = 125oC Tj = 25oC VCE = -5V 4215 — LECTOR --1102 IIBB == --320000mmAA RRENT Tj = -25oC PNP A], COL --68 IB = -100mA DC CU 10 Ep I[mC -4 h, FE ita x -2 i a 1 l -0 -2 -4 -6 -8 -10 0.1 1 10 S I[A], COLLECTOR CURRENT i VCE[V], COLLECTOR-EMITTER VOLTAGE C lic o Figure 1. Static Characteristic Figure 2. DC current Gain ( R Grade ) n T r a n s 10000 i s Tj = 125oC Tj = 25oC V = -5V GE Ic=-10Ib to CE TA r L N 100 O GAI N V 1000 T Tj = -25oC O N TI E A RR UR U T Tj=25oC C 10 A Tj=125oC h, DC FE at)[mV], S 100 Tj=-25oC s e( 1 Vc 10 0.1 1 10 0.1 1 10 I[A], COLLECTOR CURRENT Ic[A], COLLECTOR CURRENT C Figure 3. DC current Gain ( O Grade ) Figure 4. Collector-Emitter Saturation Voltage 14 10000 E Ic=-10Ib 12 G TA NT VCE = 5V OL RE 10 V R TION Tj=-25oC Tj=25oC OR CU 8 URA 1000 ECT 6 V], SAT Tj=125oC A], COLL 4 at)[m I[C 2 s e( 0 Vb 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0.1 1 10 Ic[A], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE Figure 5. Base-Emitter Saturation Voltage Figure 6. Base-Emitter On Voltage © 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com 2SA1943/FJL4215 Rev. C 3

2 S Typical Characteristics A 1 9 4 3 / F 100 J C / W] 01..90 T IC MAX. (Pulsed*) L42 oe, R[thjc 00..78 URREN 10 IC MAX. (DC) 100ms*10ms* 15 — anc 0.6 R C DC P Resist 00..45 ECTO 1 NP al LL E m 0.3 O nsient Ther 00..12 I [A], CC0.00.11 * PSUINLGSLEE T NC=O2N5R[oCE]PETITIVE pitaxia a 1E-6 1E-5 1E-4 1E-3 0.01 0.1 1 1 10 100 l Tr S Pulse duration [sec] VCE [V], COLLECTOR-EMITTER VOLTAGE ili c o Figure 7. Thermal Resistance Figure 8. Safe Operating Area n T r a n s 160 i s t 140 o r N O 120 TI A P 100 SI S DI 80 R E W 60 O P W], 40 P[C 20 0 0 25 50 75 100 125 150 175 T[oC], CASE TEMPERATURE C Figure 9. Power Derating © 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com 2SA1943/FJL4215 Rev. C 4

18.30 17.70 B 2109..2800 54..2800 A 16.60 1.00 7.40 2.00 12.00 6.20 3.50 7.00 C R2.00 C 5.80 3.10 0.254 A B 1.20 0.80 9.10 C 0.50 21.62 8.90 21.02 20.20 19.80 R1.00 C 1.70 1.30 1.50 4.05 3.20 2.60 C 2.80 2.40 3.10 1.50 1.50 C 2.70 20.50 2.50 C 2X C 2.30 19.50 1.25 C 0.90 0.254 M A B 5.75 5.75 0.85 C 5.15 5.15 0.50 FRONT VIEW SIDE VIEW BACK VIEW 3.70 5.20 0.15 3.30 4.80 BOTTOM VIEW NOTES: A. PACKAGE REFERENCE: JEDEC TO264 VARIATION AA. B. ALL DIMENSIONS ARE IN MILLIMETERS. C OUT OF JEDEC STANDARD VALUE. D. DIMENSION AND TOLERANCE AS PER ASME Y14.5-1994. E. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. F. THIS PACKAGE IS INTENDED ONLY FOR "FS PKG CODE AR" G. DRAWING FILE NAME: TO264A03REV2

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