ICGOO在线商城 > 分立半导体产品 > 晶体管 - 双极 (BJT) - 单 > 2N5172
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2N5172产品简介:
ICGOO电子元器件商城为您提供2N5172由Central Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 2N5172价格参考¥0.17-¥0.18。Central Semiconductor2N5172封装/规格:晶体管 - 双极 (BJT) - 单, 双极 (BJT) 晶体管 NPN 25V 500mA 625mW 通孔 TO-92-3。您可以下载2N5172参考资料、Datasheet数据手册功能说明书,资料中有2N5172 详细功能的应用电路图电压和使用方法及教程。
型号为2N5172的晶体管,属于ON Semiconductor品牌下的双极型晶体管(BJT),其主要特性为高频、低噪声,适用于小信号放大场合。 该晶体管常用于射频(RF)和中频(IF)放大器电路中,尤其在通信设备、无线电接收机以及测试仪器中应用广泛。由于其具备良好的高频响应和较低的噪声系数,2N5172非常适合用作前置放大器或高频信号处理模块中的关键元件。 此外,该器件也可用于模拟开关、逻辑接口电路及低功率音频放大电路中,在需要高可靠性和稳定性的电子系统中表现出色。因其TO-92封装形式,安装简便,广泛应用于消费类电子产品和工业控制领域。 综上,2N5172的应用场景主要包括:通信设备、射频放大器、测试仪器、音频前级放大、模拟开关及各类低噪声小信号处理电路。
参数 | 数值 |
品牌 | Central Semiconductor |
产品目录 | 半导体 |
描述 | 两极晶体管 - BJT NPN Gen Pur SS |
产品分类 | 分离式半导体 |
产品手册 | |
产品图片 | |
rohs | 符合RoHS |
产品系列 | 晶体管,两极晶体管 - BJT,Central Semiconductor 2N5172 |
产品型号 | 2N5172 |
产品种类 | 两极晶体管 - BJT |
发射极-基极电压VEBO | 5 V |
商标 | Central Semiconductor |
增益带宽产品fT | 200 MHz |
安装风格 | Through Hole |
封装 | Bulk |
封装/箱体 | TO-92 |
工厂包装数量 | 2500 |
晶体管极性 | NPN |
最大功率耗散 | 625 mW |
最大工作温度 | + 150 C |
最大直流电集电极电流 | 0.1 A |
最小工作温度 | - 65 C |
直流集电极/BaseGainhfeMin | 100 |
系列 | 2N5172 |
配置 | Single |
集电极—发射极最大电压VCEO | 25 V |
集电极—基极电压VCBO | 25 V |
集电极—射极饱和电压 | 0.25 V |
集电极连续电流 | 0.45 A |
2N5172 NPN 2N6076 PNP www.centralsemi.com COMPLEMENTARY DESCRIPTION: SILICON TRANSISTORS The CENTRAL SEMICONDUCTOR 2N5172 and 2N6076 are complementary silicon small signal transistors designed for general purpose applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Base Voltage VCBO 25 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5.0 V Continuous Collector Current IC 100 mA Power Dissipation PD 625 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS ICBO VCB=25V 100 nA ICBO VCB=25V, TA=100°C 10 μA ICES VCE=25V 100 nA IEBO VEB=5.0V (2N5172) 100 nA IEBO VEB=3.0V (2N6076) 100 nA BVCEO IC=10mA 25 V VCE(SAT) IC=10mA, IB=1.0mA 0.25 V VBE(SAT) IC=10mA, IB=1.0mA 0.80 V VBE(ON) VCE=10V, IC=10mA 0.5 1.2 V hFE VCE=10V, IC=10mA 100 500 hfe VCE=10V, IC=10mA, f=1.0kHz 100 750 fT VCB=5.0V, IC=2.0mA 200 MHz Cob VCB=10V, IE=0, f=1.0MHz 1.0 13 pF R1 (7-February 2014)
2N5172 NPN 2N6076 PNP COMPLEMENTARY SILICON TRANSISTORS TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Collector 3) Base MARKING: FULL PART NUMBER R1 (7-February 2014) www.centralsemi.com
2N5172 NPN 2N6076 PNP COMPLEMENTARY SILICON TRANSISTORS NPN TYPICAL ELECTRICAL CHARACTERISTICS R1 (7-February 2014) www.centralsemi.com
2N5172 NPN 2N6076 PNP COMPLEMENTARY SILICON TRANSISTORS PNP TYPICAL ELECTRICAL CHARACTERISTICS R1 (7-February 2014) www.centralsemi.com
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