TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/317 DEVICES LEVELS 2N2369A 2N2369AUB 2N4449 JAN 2N2369AU 2N2369AUBC * JANTX 2N2369AUA JANTXV JANS * Available to JANS quality level only. ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit 2N2369A / U / UA 15 Collector-Emitter Voltage V Vdc 2N4449 / UB / UBC CEO 20 2N2369A / U / UA 4.5 TO-18 (TO-206AA) Emitter-Base Voltage V Vdc 2N4449 / UB / UBC EBO 6.0 2N2369A Collector-Base Voltage V 40 Vdc CBO Collector-Emitter Voltage ICES 40 Vdc Total Power Dissipation @ 2N2369A; 2N4449 0.36 (1) T = +25°C UA, UB, UBC P 0.36 (1, 5) W A T U 0.50 (4) TO-46 (TO-206AB) Operating & Storage Junction Temperature Range Top, Tstg -65 to +200 °C 2N4449 THERMAL CHARACTERISTICS Parameters / Test Conditions Symbol Value Unit Thermal Resistance, Ambient-to-Case 2N2369A; 2N4449 R 400 °C/W UA, UB, UBC θJA 400 (5) SURFACE MOUNT U 350 UA Note: 1. Derate linearly 2.06 mW°/C above T = +25°C. A 2. Derate linearly 4.76 mW°/C above T = +95°C. C 3. Derate linearly 3.08 mW°/C above TC = +70°C. 4. Derate linearly 3.44 mW°/C above TA = +54.5°C. 5. Mounted on FR-4 PCB (1Oz. Cu) with contacts 20 mils larger than package pads. SURFACE MOUNT UB & UBC ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (UBC = Ceramic Lid Version) Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERTICS Collector-Emitter Breakdown Voltage V 15 Vdc I = 10mAdc (BR)CEO C SURFACE MOUNT Collector-Base Cutoff Current I 0.4 μAdc U (Dual Transistor) V = 20Vdc CES CE T4-LDS-0057 Rev. 2 (081394) Page 1 of 2

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/317 ELECTRICAL CHARACTERISTICS (T = +25°C, unless otherwise noted) A Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERISTICS Emitter-Base Breakdown Voltage V = 4.5Vdc 10 EB I μAdc Emitter-Base Cutoff Current EBO V = 4.0Vdc 0.25 EB Collector- Base Breakdown Voltage V = 40Vdc 10 CB I μAdc Collector-Base Cutoff Current CBO V = 32Vdc 0.2 CB ON CHARACTERISTICS (1) Forward-Current Transfer Ratio I = 10mAdc, V = 0.35Vdc 40 120 C CE IC = 30mAdc, VCE = 0.4Vdc hFE 30 120 I = 10mAdc, V = 1.0Vdc 40 120 C CE I = 100mAdc, V = 1.0Vdc 20 120 C CE Collector-Emitter Saturation Voltage I = 10mAdc, I = 1.0mAdc 0.20 C B V Vdc I = 30mAdc, I = 3.0mAdc CE(sat) 0.25 C B I = 100mAdc, I = 10mAdc 0.45 C B Base-Emitter Saturation Voltage I = 10mAdc, I = 1.0mAdc 0.70 0.85 C B V Vdc I = 30mAdc, I = 3.0mAdc BE(sat) 0.90 C B I = 100mAdc, I = 10mAdc 0.80 1.20 C B DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Forward Current Transfer Ratio |h | 5.0 10 I = 10mAdc, V = 10Vdc, f = 100MHz fe C CE Output Capacitance C 4.0 pF V = 5.0Vdc, I = 0, 100kHz ≤ f ≤ 1.0MHz obo CB E Input Capacitance V = 0.5Vdc, I = 0, 100kHz ≤ f ≤ 1.0MHz Cibo 5.0 pF EB C SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Turn-On Time t 12 ηs I = 10mAdc; I = 3.0mAdc, I = -1.5mAdc on C B1 B2 Turn-Off Time t 18 ηs I = 10mAdc; I = 3.0mAdc, I = -1.5mAdc off C B1 B2 Charge Storage Time t 13 ηs I = 10mAdc; I = 10mAdc, I = 10mAdc S C B1 B2 (1) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0%. T4-LDS-0057 Rev. 2 (081394) Page 2 of 2