HMC849LP4CE v04.0613 HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 6 GHz Typical Applications Features The HMC849LP4CE is ideal for: High Isolation: up to 60 dB T • Cellular/4G Infrastructure Single Positive Control: 0/+3V to +5V M • WiMAX, WiBro & Fixed Wireless High Input IP3: +52 dBm S • Automotive Telematics Non-Reflective Design - T • Mobile Radio “All Off” State D • Test Equipment 16 Lead 4x4 mm QFN Package: 16 mm² P S - Functional Diagram General Description S E The HMC849LP4CE is a high isolation non-reflec- H tive DC to 6 GHz GaAs pHEMT SPDT switch in a low C cost leadless surface mount package. The switch is T ideal for cellular/WiMAX/4G Infrastructure applicati- I W ons yielding up to 60 dB isolation, low 0.8 dB inser- S tion loss and +52 dBm input IP3. Power handling is excellent up through the 5 - 6 GHz WiMAX band with the switch offering a P1dB compression point of +31 dBm. On-chip circuitry allows a single positive voltage control of 0/+3V or 0/+5V at very low DC currents. An enable input (EN) set to logic high will put the switch in an “all off” state. Electrical Specifications, T = +25 °C, Vctl = 0/Vdd, Vdd = +3V to +5V, 50 Ohm System A Parameter Frequency Min. Typ. Max. Units DC - 2.0 GHz 0.8 1.3 dB Insertion Loss 2.0 - 4.0 GHz 1.0 1.5 dB 4.0 - 6.0 GHz 1.7 2.5 DC - 2.0 GHz 53 60 dB Isolation (RFC to RF1/RF2) 2.0 - 4.0 GHz 48 55 dB 4.0 - 6.0 GHz 40 52 DC - 4.0 GHz 17 dB Return Loss (On State) 4.0 - 6.0 GHz 13 dB Return Loss (Off State) DC - 6.0 GHz 15 dB +3V 29 30 dBm Input Power for 1 dB Compression 0.35 - 4.0 GHz +5V 34 35 dBm Input Third Order Intercept DC - 6.0 GHz 52 dBm (Two-Tone Input Power = +7 dBm Each Tone) Switching Speed tRISE, tFALL (10/90% RF) DC - 4.0 GHz 80 ns tON, tOFF (50% CTL to 10/90% RF) 150 600 ns For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 1 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com

HMC849LP4CE v04.0613 HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 6 GHz Insertion Loss Return Loss [1] 0 0 -0.5 -5 T SS (dB)-1-.51 S (dB) --1150 SM O S NSERTION L-2--.532 RETURN LO ---322050 DT - I -3.5 -35 P -4 -40 S 0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 FREQUENCY (GHz) FREQUENCY (GHz) - +25C S RFC +-4805CC RRFF11,, RRFF22 OOFNF E H Isolation Between C Ports RFC and RF1 / RF2 Isolation Between Ports RF1 and RF2 T I 0 0 W -10 S -20 -20 N (dB)-40 N (dB)-30 O O-40 TI TI OLA-60 OLA-50 S S I I -60 -80 -70 -100 -80 0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 FREQUENCY (GHz) FREQUENCY (GHz) RF1 RFC-RF1 ON RF2 RFC-RF2 ON ALL OFF 0.1 and 1 dB Input Compression 0.1 and 1 dB Input Compression Point, Vdd = 5V, Linear Point, Vdd = 3V, Linear 40 35 dBm) 35 dBm) 30 N ( N ( O O SI 30 SI S S RE RE 25 P P M 25 M O O C C UT UT 20 P 20 P N N I I 15 15 0 1 2 3 4 5 6 0 1 2 3 4 5 6 FREQUENCY (GHz) FREQUENCY (GHz) 0.1 dB Compression Point 0.1 dB Compression Point 1dB Compression Point 1 dB Compression Point [1] RFC is reflective in “all off” state. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 2 Application Support: Phone: 978-250-3343 or apps@hittite.com

HMC849LP4CE v04.0613 HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 6 GHz 0.1 and 1 dB Input Compression 0.1 and 1 dB Input Compression Point, Vdd = 5V Point, Vdd = 3V 40 35 MT N (dBm) 35 N (dBm) 30 O O S SI 30 SI S S RE RE 25 - P P T COM 25 COM D UT UT 20 P 20 P N N P I I S 15 15 0.01 0.1 1 0.01 0.1 1 - FREQUENCY (GHz) in log scale FREQUENCY (GHz) in log scale S 0.1 dB Compression Point 0.1 dB Compression Point E 1 dB Compression Point 1 dB Compression Point H C Input Third Order Intercept Input Third Order Intercept T Point, Vdd = 5V, Linear Point, Vdd = 3V, Linear I W 60 60 S 55 55 m) m) B B 3 (d 50 3 (d 50 P P I I 45 45 40 40 0 1 2 3 4 5 6 0 1 2 3 4 5 6 FREQUENCY (GHz) FREQUENCY (GHz) +25C +25C +85C +85C -40C -40C Input Third Order Intercept Input Third Order Intercept Point, Vdd = 5V Point, Vdd = 3V 60 60 55 55 m) m) B B 3 (d 50 3 (d 50 P P I I 45 45 40 40 0.01 0.1 1 0.01 0.1 1 FREQUENCY (GHz) in log scale FREQUENCY (GHz) in log scale +25C +25C +85C +85C -40C -40C For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 3 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com

HMC849LP4CE v04.0613 HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 6 GHz Absolute Maximum Ratings Bias Voltage & Current Bias Voltage (Vdd) 7V Vdd Idd (Typ.) (V) (mA) Control Voltage (Vctl, EN) -1V to Vdd +1V T RF Input Power * 3 0.80 M Through Path 3V/5V 30.60 / 33 dBm 5 0.85 S Termination Path 3V/5V 26.4 dBm - Channel Temperature 150 °C T Digital Control Voltages Continuous Pdiss (T = 85 °C) D (derate 17.6 mW/°C for through path, and 6.8 mW/°C for termination path above 85 °C) State Bias Condition P Through Path 1.144 W Low 0 to +0.8 Vdc @ <1 µA Typical S Termination Path 0.441 W High +2.0 to +5.0 Vdc @ 30 µA Typical - Thermal Resistance S (channel to package bottom) Through Path 56.8 °C/W E Termination Path 147.3 °C/W Truth Table H Storage Temperature -65 to +150 °C C Control Input Signal Path State Operating Temperature -40 to +85 °C T Vctl EN RFC - RF1 RFC - RF2 I ESD Sensitivity (HBM) Class 1A W Low Low OFF ON * The RF input power is quite lower than the breakdown High Low ON OFF S power levels. Hence, the only concern with this product Low High OFF OFF is the thermal limit. High High OFF OFF ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 Application Support: Phone: 978-250-3343 or apps@hittite.com

HMC849LP4CE v04.0613 HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 6 GHz Outline Drawing T M S - T D P S - S E H C T I W S NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number Package Body Material Lead Finish MSL Rating Package Marking [1] HMC849LP4CE RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] H849 XXXX [1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 260 °C For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 5 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com

HMC849LP4CE v04.0613 HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 6 GHz Pin Descriptions Pin Number Function Description Interface Schematic 1 Vdd Supply Voltage. T M S 2 Vctl Control input. See truth and control voltage tables. - T D P 3, 9, 12 RFC, RF1, RF2 These pins are DC coupled and matched to 50 Ohms. S Blocking capacitors are required. - The pins are not connected internally; however, all 4, 6, 7, 8, S N/C data shown herein was measured with these pins 13, 14, 15, 16 E connected to RF/DC ground externally. H C T 5 EN Enable. See truth and control voltage tables. I W S Package bottom must also be 10, 11 GND connected to PCB RF ground. Application Circuit For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 6 Application Support: Phone: 978-250-3343 or apps@hittite.com

HMC849LP4CE v04.0613 HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 6 GHz Evaluation PCB T M S - T D P S - S E H C T I W S List of Materials for Evaluation PCB 106975 [1] The circuit board used in the final application Item Description should be generated with proper RF circuit design J1 - J3 PC Mount SMA RF Connector techniques. Signal lines at the RF port should have J4 - J8 DC Pin 50 Ohm impedance and the package ground leads C1 - C4 100 pF Capacitor, 0402 Pkg. and backside ground slug should be connected U1 HMC849LP4CE SPDT Switch directly to the ground plane similar to that shown PCB [2] 106965 Evaluation PCB above. The evaluation circuit board shown above is [1] Reference this number when ordering complete evaluation PCB available from Hittite Microwave Corporation upon [2] Circuit Board Material: Rogers 4350 or Arlon 25FR request. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 7 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com

HMC849LP4CE v04.0613 HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 6 GHz Notes: T M S - T D P S - S E H C T I W S For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 Application Support: Phone: 978-250-3343 or apps@hittite.com