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F G A March 2015 6 0 N 6 FGA60N60UFD 0 U 600 V, 60 A Field Stop IGBT F D — Features General Description 6 0 • High Current Capability Using novel field stop IGBT technology, Fairchild’s field stop 0 • Low Saturation Voltage: VCE(sat) = 1.9 V @ IC = 60 A IwGeBldTesr oafnfedr PthFeC oapptpimlicuamtio pnesr fwohrmeraen lcoew focor nsdoulacrt ioinnv aenrtde rs, wUitPcSh-, V, 6 • High Input Impedance ing losses are essential. 0 • Fast Switching A • RoHS Compliant F i Applications e l d • Solar Inverter, UPS, Welder, PFC S t o p I G B T C G TO-3P E G C E Absolute Maximum Ratings Symbol Description Ratings Unit V Collector to Emitter Voltage 600 V CES Gate to Emitter Voltage ±20 V V GES Transient Gate-to-Emitter Voltage ±30 Collector Current @ T = 25oC 120 A I C C Collector Current @ T = 100oC 60 A C ICM (1) Pulsed Collector Current @ TC = 25oC 180 A Maximum Power Dissipation @ T = 25oC 298 W P C D Maximum Power Dissipation @ T = 100oC 119 W C T Operating Junction Temperature -55 to +150 oC J T Storage Temperature Range -55 to +150 oC stg Maximum Lead Temp. for soldering TL Purposes, 1/8” from case for 5 seconds 300 oC Notes: 1: Repetitive test , Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Unit RJC(IGBT) Thermal Resistance, Junction to Case - 0.33 oC/W RJC(Diode) Thermal Resistance, Junction to Case - 1.1 oC/W RJA Thermal Resistance, Junction to Ambient - 40 oC/W ©2009 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGA60N60UFD Rev. 1.4

F G Package Marking and Ordering Information A 6 0 Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity N 6 FGA60N60UFDTU FGA60N60UFD TO-3P Tube N/A N/A 30 0 U F Electrical Characteristics of the IGBT D TC = 25°C unless otherwise noted — Symbol Parameter Test Conditions Min. Typ. Max. Unit 6 0 0 Off Characteristics V , BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 A 600 - - V 6 0 BTVCES TVeomltapgeerature Coefficient of Breakdown VGE = 0 V, IC = 250 A - 0.67 - V/oC A J F I Collector Cut-Off Current V = V , V = 0 V - - 250 A i CES CE CES GE e l I G-E Leakage Current V = V , V = 0 V - - ±400 nA d GES GE GES CE S t On Characteristics o p VGE(th) G-E Threshold Voltage IC = 250 A, VCE = VGE 4.0 5.0 6.5 V IG IC = 60 A, VGE = 15 V - 1.9 2.4 V B V Collector to Emitter Saturation Voltage T CE(sat) ITC = = 6 102 A5,o VCGE = 15 V, - 2.1 - V C Dynamic Characteristics C Input Capacitance - 2855 - pF ies V = 30 VV = 0 V, C Output Capacitance CE , GE - 325 - pF oes f = 1 MHz C Reverse Transfer Capacitance - 110 - pF res Switching Characteristics t Turn-On Delay Time - 23 - ns d(on) t Rise Time - 58 - ns r td(off) Turn-Off Delay Time VCC = 400 V, IC = 60 A, - 130 - ns tEf FTuarlln T-Oimne Switching Loss IRnGd u=c t5iv e ,L VoGaEd ,= T 1C5 = V 2,5oC -- 14.801 8-0 mnsJ on E Turn-Off Switching Loss - 0.81 - mJ off E Total Switching Loss - 2.62 - mJ ts t Turn-On Delay Time - 22 - ns d(on) t Rise Time - 61 - ns r td(off) Turn-Off Delay Time VCC = 400 V, IC = 60 A, - 141 - ns tEf FTuarlln T-Oimne Switching Loss IRnGd u=c t5iv e ,L VoGaEd ,= T 1C5 = V 1,25oC -- 16.932 -- mnsJ on E Turn-Off Switching Loss - 1.23 - mJ off E Total Switching Loss - 3.15 - mJ ts Q Total Gate Charge - 188 - nC g V = 400 V, I = 60 A, Q Gate to Emitter Charge CE C - 21 - nC ge VGE = 15 V Q Gate to Collector Charge - 97 - nC gc ©2009 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FGA60N60UFD Rev. 1.4

F G Electrical Characteristics of the Diode TC = 25°C unless otherwise noted A 6 Symbol Parameter Test Conditions Min. Typ. Max Unit 0 N T = 25oC - 2.0 2.6 6 V Diode Forward Voltage I = 30 A C V 0 FM F T = 125oC - 1.8 - U C F T = 25oC - 47 - D trr Diode Reverse Recovery Time TC = 125oC - 179 - ns — IF = 30 A, diF/dt = 200 A/s TC = 25oC - 83 - 6 Q Diode Reverse Recovery Charge C nC 0 rr T = 125oC - 567 - 0 C V , 6 0 A F i e l d S t o p I G B T ©2009 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com FGA60N60UFD Rev. 1.4

F G Typical Performance Characteristics A 6 0 N Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics 6 0 180 180 U TC = 25oC TC = 125oC F 150 20V 15V 150 20V 15V D — A] 12V A] 12V nt, I [C 120 10V nt, I [C 120 10V 600 or Curre 90 or Curre 90 V, 60 Collect 3600 VGE = 8V Collect 3600 VGE = 8V A Fie l d 0 0 S 0 2 4 6 8 0 2 4 6 8 to Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] p I G Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics B T Characteristics 180 180 Common Emitter Common Emitter 150 VGE = 15V 150 VCE = 20V nt, I [A]C 120 TTCC == 2152o5CoC ent, I [A]C 120 TTCC == 2152o5CoC urre 90 Curr 90 ctor C 60 ector 60 olle Coll C 30 30 0 0 0 1 2 3 4 5 0 1 2 3 4 5 Collector-Emitter Voltage, VCE [V] Gate-Emitter Voltage,VGE [V] Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. V GE Temperature at Variant Current Level 4.0 20 Common Emitter Common Emitter [V]CE 3.5 VGE = 15V [V]CE16 TC = -40oC V V e, e, g 3.0 g a a Volt 120A Volt 12 er 2.5 er mitt mitt 8 or-E 2.0 60A or-E ct ct 120A olle 1.5 olle 4 60A C C IC = 30A IC = 30A 1.0 0 25 50 75 100 125 0 3 6 9 12 15 18 Collector-EmitterCase Temperature, TC [oC] Gate-Emitter Voltage, VGE [V] ©2009 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com FGA60N60UFD Rev. 1.4

F G Typical Performance Characteristics A 6 0 N Figure 7. Saturation Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE 6 0 20 20 U Common Emitter Common Emitter F ctor-Emitter VoltageV [V], CE11826 60A TC1 2=0 2A5oC or-Emitter Voltage, V [V]CE11826 TC 1=2 102A5oC D — 600 V, 60 A F Colle 4 IC = 30A Collect 4 I6C0 =A 30A ield 0 0 S 0 3 6 9 12 15 18 0 3 6 9 12 15 18 to Gate-Emitter Voltage, VGE [V] Gate-Emitter Voltage, VGE [V] p I G Figure 9. Capacitance Characteristics Figure 10. Gate charge Characteristics B T 6000 15 Common Emitter Common Emitter VGE = 0V, f = 1MHz TC = 25oC Cies TC = 25oC [V]GE12 300V Capacitance [pF] 24000000 Coes mitter Voltage, V 69 VCC = 100V 200V E e- at 3 G C res 0 0 1 10 30 0 50 100 150 200 Collector-Emitter Voltage, VCE [V] Gate Charge, Qg [nC] Figure 11. SOA Characteristics   Figure 12. Turn off Switching SOA Characteristics 500 300 10s 100 100 ent, I [A]c 10 110m0ss nt, I [A]C Collector Curr 0.11 SPiunlgsele T NCo =n r2e5poeCtitive 1D0C ms Collector Curre 10 Curves must be derated linearly with increase Safe Operating Area in temperature V = 15V, T = 125oC GE C 0.01 1 1 10 100 1000 1 10 100 1000 Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] ©2009 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com FGA60N60UFD Rev. 1.4

F G Typical Performance Characteristics A 6 0 N Figure 13. Turn-on Characteristics vs. Figure 14. Turn-off Characteristics vs. 6 Gate Resistance  G ate Resistance 0 U 300 6000 F Common Emitter D VCC = 400V, VGE = 15V — IC = 60A 1000 TC = 25oC 60 ns]100 t ns] TC = 125oC 0 me [ r me [ td(off) V, g Ti g Ti 60 witchin CVCoCm =m 4o0n0 EVm, VitGteE r= 15V witchin 100 tf A Fi S td(on) ITCC = = 6 205AoC S eld TC = 125oC St 10 10 o 0 10 20 30 40 50 0 10 20 30 40 50 p Gate Resistance, RG [] Gate Resistance, RG [] IG B T Figure 15. Turn-on Characteristics vs Figure 16.Turn-off Characteristics vs. Collector Current  Collector Current 500 1000 Common Emitter Common Emitter VGE = 15V, RG = 5 VGE = 15V, RG = 5 T = 25oC T = 25oC C C s] TC = 125oC tr s] TC = 125oC n n e [ 100 e [ m m Ti Ti t g g d(off) n n hi hi c c100 wit wit S S t d(on) t f 10 30 0 20 40 60 80 100 120 0 20 40 60 80 100 120 Collector Current, IC [A] Collector Current, IC [A] Figure 17. Switching Loss vs. Gate ResistanceFigure 18.Switching Loss vs. Collector Current 20 20 Common Emitter Common Emitter VCC = 400V, VGE = 15V 10 VGE = 15V, RG = 5 10 IC = 60A TC = 25oC Eon J] TC = 25oC J] TC = 125oC s [m TC = 125oC s [m Los Los Eoff ng Eon ng 1 hi hi c c wit wit S S 1 E off 0.1 0 10 20 30 40 50 0 20 40 60 80 100 120 Gate Resistance, RG [] Collector Current, IC [A] ©2009 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com FGA60N60UFD Rev. 1.4

F G Typical Performance Characteristics A 6 0 N Figure 19. Forward Characteristics Figure 20. Reverse Current 6 0 200 500 U F 100 100 D TC = 125oC — ent, I [A]F TJ = 125oC TJ = 25oC nt , I [A]R 10 600 V Curr 10 urre 1 TC = 75oC , 6 ard TJ = 75oC se C 0 A orw ver F F TTC == 2152o5CoC Re 0.1 TC = 25oC ield C 1 0.01 S 0 1 2 3 4 0 200 400 600 to Forward Voltage, VF [V] Reverse Voltage, VR [V] p I G Figure 21. Stored Charge Figure 22. Reverse Recovery Time B T 120 60 s] Q [nC]rr18000 200A/s Time, t [nrr50 200A/s ge, ery Char 60 ecov di/dt = 100A/s Stored 40 diF/dt = 100A/s verse R40 e Tc = 25℃ R Tc = 25℃ 20 30 5 20 40 60 5 20 40 60 Forward Current, IF [A] Forward Current, IF [A] Figure 23. Transient Thermal Impedance of IGBT 1 c] Zthj 0.5 se [ 0.1 0.2 n po 0.1 es 0.05 R mal 0.01 00..0021 PDM Ther single pulse Duty Factor, tD1t 2= t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 Rectangular Pulse Duration [sec] ©2009 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com FGA60N60UFD Rev. 1.4

5.00 4.60 13.80 13.40 1.65 3.30 16.20 5.20 1.45 3.10 15.40 4.80 R0.50 3° 16.96 20.10 18.90 16.56 19.70 18.50 7.20 6.80 3° 4° 1 3 2.00 3.70 1.85 1.60 3.30 2.60 2.20 2.20 20.30 1.80 3.20 19.70 2.80 1.20 0.80 0.55 M 0.75 0.55 5.45 5.45 NOTES: UNLESS OTHERWISE SPECIFIED A) THIS PACKAGE CONFORMS TO EIAJ SC-65 PACKAGING STANDARD. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSION AND TOLERANCING PER ASME14.5-2009. R0.50 D) DIMENSIONS ARE EXCLUSSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSSIONS. E) DRAWING FILE NAME: TO3PN03AREV2. F) FAIRCHILD SEMICONDUCTOR.

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