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  • 型号: ZEN132V230A16LS
  • 制造商: CORCOM/TYCO ELECTRONICS
  • 库位|库存: xxxx|xxxx
  • 要求:
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ZEN132V230A16LS产品简介:

ICGOO电子元器件商城为您提供ZEN132V230A16LS由CORCOM/TYCO ELECTRONICS设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 ZEN132V230A16LS价格参考¥12.02-¥14.21。CORCOM/TYCO ELECTRONICSZEN132V230A16LS封装/规格:TVS - 混合技术, 。您可以下载ZEN132V230A16LS参考资料、Datasheet数据手册功能说明书,资料中有ZEN132V230A16LS 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

电路保护

描述

POLYZEN 13.2V PPTC/ZENER SMDTVS 二极管 - 瞬态电压抑制器 13.4V .04W 2.3A LS SMD PolyZen DEVICES

产品分类

TVS - 混合技术

品牌

TE Connectivity

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

二极管与整流器,TVS二极管,TVS 二极管 - 瞬态电压抑制器,TE Connectivity / Raychem ZEN132V230A16LSPolyZen,Raychem

数据手册

http://www.te.com/commerce/DocumentDelivery/DDEController?Action=srchrtrv&DocNm=CLP00002&DocType=CS&DocLang=Englishhttp://www.te.com/commerce/DocumentDelivery/DDEController?Action=srchrtrv&DocNm=SCD27362&DocType=SS&DocLang=EN

产品型号

ZEN132V230A16LS

产品种类

TVS 二极管 - 瞬态电压抑制器

供应商器件封装

SMD

其它名称

ZEN132V230A16LSDKR

击穿电压

16 V

功率(W)

700mW

包装

Digi-Reel®

商标

TE Connectivity / Raychem

安装风格

SMD/SMT

封装

Reel

封装/外壳

3-SMD,无引线

尺寸

4.15 mm W x 4.15 mm L x 2 mm H

峰值浪涌电流

2.3 A

峰值脉冲功率耗散

700 mW

工作电压

5 V

工厂包装数量

3000

应用

通用

技术

混合技术

最大工作温度

+ 85 C

最小工作温度

- 40 C

标准包装

1

电压-工作

13.2V

电压-箝位

16V

电容

4200 pF

电路数

1

端接类型

SMD/SMT

钳位电压

13.4 V

零件号别名

RF1496-000

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PDF Datasheet 数据手册内容提取

PRODUCT: ZEN132V230A16LS PolyZen DOCUMENT: SCD27362 Polymer Enhanced Zener Diode REV LETTER: D Micro-Assemblies REV DATE: JULY 26, 2016 PAGE NO.: 1 OF 8 Specification Status: Released GENERAL DESCRIPTION BENEFITS Littelfuse PolyZen devices are polymer  Stable Zener diode helps shield enhanced, precision Zener diode micro- downstream electronics from assemblies. They offer resettable overvoltage and reverse bias protection against multi-Watt fault  Trip events shut out overvoltage and events without the need for multi-Watt reverse bias sources heat sinks.  Analog nature of trip events minimizes The Zener diode used for voltage upstream inductive spikes clamping in a PolyZen micro-assembly was selected due to its relatively flat voltage vs current  Minimal power dissipation requirements response. This helps improve output voltage clamping,  Single component placement even when input voltage is high and diode currents are FEATURES large.  Overvoltage transient suppression An advanced feature of the PolyZen micro-assembly is that  Stable V vs fault current the Zener diode is thermally coupled to a resistively non- Z linear, polymer PTC (positive temperature coefficient) layer.  Time delayed, overvoltage trip This PTC layer is fully integrated into the device, and is  Time delayed, reverse bias trip electrically in series between V and the diode clamped IN  Multi-Watt power handling capability V . OUT  Integrated device construction This advanced PTC layer responds to either extended  RoHS Compliant diode heating or overcurrent events by transitioning from a low to high resistance state, also known as” tripping”. A TARGET APPLICATIONS tripped PTC will limit current and generate voltage drop. It  DC power port protection in portable helps to protect both the Zener diode and the follow on electronics electronics and effectively increases the diode’s power  DC power port protection for systems handling capability. using The polymer enhanced Zener diode helps protect sensitive barrel jacks for power input portable electronics from damage caused by inductive  Internal overvoltage & transient voltage spikes, voltage transients, incorrect power supplies suppression and reverse bias. These devices are particularly suitable for portable electronics and other low-power DC devices.  DC output voltage regulation. TYPICAL APPLICATION BLOCK DIAGRAM PPPooowwweeerrr SSSuuupppppplllyyy PPPooolllyyyZZZeeennn PPPrrrooottteeecccttteeeddd EEEllleeeccctttrrrooonnniiicccsss (((EEExxxttteeerrrnnnaaalll ooorrr IIInnnttteeerrrnnnaaalll))) GGGNNNDDD 222 VVVIIINNN 111 PPoollyyZZeenn +++ DDeevviiccee VVV OOOUUUTTT 333 RRReeeggguuulllaaattteeeddd RRR LLLoooaaaddd OOOuuutttpppuuuttt PPPrrrooottteeecccttteeeddd dddooowwwnnnssstttrrreeeaaammm eeellleeeccctttrrrooonnniiicccsss © 2016 Littelfuse, Inc. littelfuse.com Specifications are subject to change without notice. Revised July 26, 2016

PRODUCT: ZEN132V230A16LS PolyZen DOCUMENT: SCD27362 Polymer Enhanced Zener Diode REV LETTER: D Micro-Assemblies REV DATE: JULY 26, 2016 PAGE NO.: 2 OF 8 CONFIGURATION INFORMATION Pin Configuration (Top View) Pad Dimensions 22 GGNNDD 00..99 44 mmmm ((00..003377””)) 22..2211 mmmm 00..3333 mmmm VV 11 ((00..008877””)) ((00..001133””)) IINN 00..9944 mmmm 33 VV ((00..003377””)) OOUUTT 00..5566 mmmm 22..8888 mmmm 00..5566 mmmm ((00..002222””)) ((00..11113355””)) ((00..002222””)) PIN DESCRIPTION Pin Pin Name Pin Function Number 1 V V . Protected input to Zener diode. IN IN 2 GND GND 3 V V . Zener regulated voltage output OUT OUT BLOCK DIAGRAM PPoollyymmeerr PPTTCC VV IINN VV OOUUTT ZZeenneerr DDiiooddee GGNNDD DEFINITION of TERMS II ,, II II IPTC Current flowing through the PTC portion of the PPTTCC HHOOLLDD OOUUTT circuit IFLT RMS fault current flowing through the diode VV IINN I Current flowing out the V pin of the device OUT OUT Trip Event A condition where the PTC transitions to a high VV OOUUTT resistance state, thereby significantly limiting I II PTC FFLLTT and related currents. Trip Time the PTC portion of the device remains in a Endurance high resistance state. GGNNDD © 2016 Littelfuse, Inc. littelfuse.com Specifications are subject to change without notice. Revised July 26, 2016

PRODUCT: ZEN132V230A16LS PolyZen DOCUMENT: SCD27362 Polymer Enhanced Zener Diode REV LETTER: D Micro-Assemblies REV DATE: JULY 26, 2016 PAGE NO.: 3 OF 8 GENERAL SPECIFICATIONS Operating Temperature -40º to +85ºC Storage Temperature -40º to +85ºC ELECTRICAL CHARACTERISTICS1-3, 11 (Typical unless otherwise specified) Tripped Power V Max8 VZ4 Leakage Current Int(V) IFLT Max9 Dissipation 10 (V) I 5 Max I 4 HOLD R Typ6 R 7 zt @20ºC 1Max (A) (Ohms) (Ohms) V Test I Test Test (A) Max INT FLT Value Test Max Current Max Voltage Voltage Min Typ Max Current (W) Voltage (V) (A) (A) (V) (V) (mA) +2 +20 13.2 13.4 13.6 0.1 2.3 13.15 5 0.04 0.06 16V 5A 0.8 20 -40 -12V Note 1: Electrical characteristics determined at 25ºC unless otherwise specified. Note 2: This device is intended for limited fault protection. Repeated trip events or extended trip endurance can degrade the device and may affect performance to specifications. Performance impact will depend on multiple factors including, but not limited to, voltage, trip current, trip duration, trip cycles, and circuit design. For details or ratings specific to your application contact Littelfuse Connectivity Circuit Protection directly. Note 3: Specifications developed using 1.0 ounce 0.045” wide copper traces on dedicated FR4 test boards. Performance in your application may vary. Note 4: Izt is the current at which Vz is measured (VZ = VOUT). Additional VZ values are available on request. Note 5: IHOLD: Maximum steady state IPTC (current entering or exiting the VIN pin of the device) that will not generate a trip event at the specified temperature. Specification assumes IFLT (current flowing through the Zener diode) is sufficiently low so as to prevent the diode from acting as a heat source. Testing is conducted with an “open” Zener. Note 6: R Typ: Resistance between VIN and VOUT pins during normal operation at room temperature. Note 7: R1Max: The maximum resistance between VIN and VOUT pins at room temperature, one hour after 1st trip or after reflow soldering. Note 8: VINT Max: VINT Max relates to the voltage across the PPTC portion of the PolyZen device (VIN-VOUT). VINT Max is defined as the voltage (VIN-VOUT) at which typical qualification devices (98% devices, 95% confidence) survived at least 100 trip cycles and 24 hours’ trip endurance at the specified voltage (VIN-VOUT) and current (IPTC). VINT Max testing is conducted using a "shorted" load (VOUT = 0 V). VINT Max is a survivability rating, not a performance rating. Note 9: IFLT Max: IFLT Max relates to the stead state current flowing through the diode portion of the PolyZen device in a fault condition, prior to a trip event. IFLT Max is defined as the current at which typical qualification devices (12 parts per lot from 3 lots) survived 100 test cycles. RMS fault currents above IFLT Max may permanently damage the diode portion of the PolyZen device. Testing is conducted with NO load connected to VOUT, such that IOUT = 0. “Test voltage” is defined as the voltage between VIN to GND and includes the PolyZen Diode drop. Specification is dependent on the direction of current flow through the diode. IFLT Max is a survivability rating, not a performance rating. Note 10: The power dissipated by the device when in the “tripped” state, as measured on Littelfuse test boards (see note 3). Note 11: Specifications based on limited qualification data and subject to change. © 2016 Littelfuse, Inc. littelfuse.com Specifications are subject to change without notice. Revised July 26, 2016

PRODUCT: ZEN132V230A16LS PolyZen DOCUMENT: SCD27362 Polymer Enhanced Zener Diode REV LETTER: D Micro-Assemblies REV DATE: JULY 26, 2016 PAGE NO.: 4 OF 8 Min Typical Max MECHANICAL DIMENSIONS 3.85 mm 4 mm 4.15 mm Length L (0.152”) (0.16”) (0.163") 3.85 mm 4 mm 4.15 mm Width W (0.152”) (0.16”) (0.163") Height H 1.4mm 1.7 mm 2.0 mm (0.055”) (0.067”) (0.081”) 3.0 mm Length Diode Ld - - (0.118”) 1.0 mm Height Diode Hd - (0.039”) - Offset O1 - 0.6 mm - (0.024”) 0.7 mm Offset O2 - - (0.028”) SOLDER REFLOW RECOMMENDATIONS: Classification Reflow Profiles Profile Feature Pb-Free Assembly Average Ramp-Up Rate (Tsmax to Tp) 3° C/second max. Preheat • Temperature Min (Tsmin) 150 °C • Temperature Max (Tsmax) 200 °C • Time (tsmin to tsmax) 60-180 seconds Time maintained above: • Temperature (TL) 217 °C • Time (tL) 60-150 seconds Peak/Classification Temperature (Tp) 260 °C Time within 5 °C of actual Peak Temperature (tp) 20-40 seconds Ramp-Down Rate 6 °C/second max. Time 25 °C to Peak Temperature 8 minutes max. © 2016 Littelfuse, Inc. littelfuse.com Specifications are subject to change without notice. Revised July 26, 2016

PRODUCT: ZEN132V230A16LS PolyZen DOCUMENT: SCD27362 Polymer Enhanced Zener Diode REV LETTER: D Micro-Assemblies REV DATE: JULY 26, 2016 PAGE NO.: 5 OF 8 PACKAGING Packaging Tape & Reel Standard Box ZENXXXVXXXAXXLS 3,000 15,000 Reel Dimensions for PolyZen Devices A = 330 max N = 102 min W = 8.4 1 W = 11.1 2 MMaattttee FFiinniisshh TThheessee AArreeaa NNmmiinn AAmmaaxx © 2016 Littelfuse, Inc. littelfuse.com Specifications are subject to change without notice. Revised July 26, 2016

PRODUCT: ZEN132V230A16LS PolyZen DOCUMENT: SCD27362 Polymer Enhanced Zener Diode REV LETTER: D Micro-Assemblies REV DATE: JULY 26, 2016 PAGE NO.: 6 OF 8 Taped Component Dimensions for PolyZen Devices © 2016 Littelfuse, Inc. littelfuse.com Specifications are subject to change without notice. Revised July 26, 2016

PRODUCT: ZEN132V230A16LS PolyZen DOCUMENT: SCD27362 Polymer Enhanced Zener Diode REV LETTER: D Micro-Assemblies REV DATE: JULY 26, 2016 PAGE NO.: 7 OF 8 Typical Fault Response: ZEN132V230A16LS 20 V/2 A Current Limited Source (I =0) OUT 22 20 18 16 A) 14 or I ( 12 Vin (V) V) 10 Vout (V) V ( 8 I FLT (A) 6 4 2 0 0.00 0.05 0.10 0.15 0.20 0.25 Time (Sec) Pulse IV (300µsec Pulse) Pulse IV (300µsec Pulse) 14 5 V) 13 A) ut ( (T 0 o FL e: V 12 nt: I g e a rr -5 olt Cu V 11 ZEN132V230A16LS ZEN132V230A16LS 10 -10 0.00001 0.0001 0.001 0.01 0.1 1 -2 0 2 4 6 8 10 12 14 Current: I (A) Voltage: Vout (V) FLT V Peak vs. I RMS(I =0) Time to Trip vs. I (I =0) OUT FLT OUT FLT OUT 17.0 100.0 16.5 ZEN132V230A16LS V) 16.0 ec) 10.0 ak ( 15.5 p (S Pe 15.0 Tri 1.0 T o VOU 14.5 me t 14.0 Ti 0.1 ZEN132V230A16LS 13.5 13.0 0.0 0.0 0.5 1.0 1.5 2.0 0.0 0.5 1.0 1.5 2.0 I RMS (A) FLT I RMS (A) FLT © 2016 Littelfuse, Inc. littelfuse.com Specifications are subject to change without notice. Revised July 26, 2016

PRODUCT: ZEN132V230A16LS PolyZen DOCUMENT: SCD27362 Polymer Enhanced Zener Diode REV LETTER: D Micro-Assemblies REV DATE: JULY 26, 2016 PAGE NO.: 8 OF 8 Time To Trip vs. I (I =0) V Peak vs. I (I =0) FLT OUT OUT FLT OUT 100.000 0.0 -0.2 ZEN132V230A16LS ) 10.000 ZEN132V230A16LS c e ) -0.4 S V ( ak ( -0.6 rip 1.000 e T PT -0.8 To 0.100 OU e V -1.0 m Ti 0.010 -1.2 -1.4 0.001 -40 -30 -20 -10 0 -40 -30 -20 -10 0 I RMS (A) FLT I RMS (A) FLT Temperature Effect on I (I = 0) Time to Trip vs. I RMS (I =0) Hold FLT PTC FLT 4 1000.000 3.5 ZEN132V230A16LS 100.000 3 ) ZEN132V230A16LS c A) 2.5 Se 10.000 ( 2 p ( IHold1.51 e to Tri 01..100000 m 0.5 Ti 0.010 0 -40 -20 0 20 40 60 80 100 0.001 0 10 20 30 40 Ambient Temperature (C) I RMS (A) PTC Temperature Effect on R TYP 0.10 ZEN132V230A16LS 0.08 ) m h 0.06 O ( P Y 0.04 T R 0.02 0.00 20 40 60 80 Ambient Temperature (C) © 2016 Littelfuse, Inc. littelfuse.com Specifications are subject to change without notice. Revised July 26, 2016

PRODUCT: ZEN132V230A16LS PolyZen DOCUMENT: SCD27362 Polymer Enhanced Zener Diode REV LETTER: D Micro-Assemblies REV DATE: JULY 26, 2016 PAGE NO.: 9 OF 8 Materials Information ROHS Compliant ELV Compliant Pb-Free Littelfuse products are not designed for, and shall not be used for, any purpose (including, without limitation, automotive, military, aerospace, medical, life-saving, Life-sustaining or nuclear facility applications, devices intended for surgical implant into the body, or any other application in which the failure or lack of desired operation of the product may result in personal injury, death, or property damage) other than those expressly set forth in applicable Littelfuse product documentation. Warranties granted by Littelfuse shall be deemed void for products used for any purpose not expressly set forth in applicable Littelfuse documentation. Littelfuse shall not be liable for any claims or damages arising out of products used in applications not expressly intended by Littelfuse as set forth in applicable Littelfuse documentation. The sale and use of Littelfuse products is subject to Littelfuse Terms and Conditions of Sale, unless otherwise agreed by Littelfuse. © 2016 Littelfuse, Inc. littelfuse.com Specifications are subject to change without notice. Revised July 26, 2016