PRODUCT: ZEN056V130A24LS PolyZen Polymer Enhanced Zener Diode DOCUMENT: SCD26730 Micro-Assemblies REV LETTER: F REV DATE: MAY 12, 2011 PAGE NO.: 1 OF 8 Specification Status: Released GENERAL DESCRIPTION BENEFITS TE PolyZen devices are polymer • Stable Zener diode helps shield downstream enhanced, precision Zener diode micro- electronics from overvoltage and reverse bias assemblies. They offer resettable protection against multi-Watt fault events • Trip events shut out overvoltage and reverse without the need for multi-Watt heat sinks. bias sources • Analog nature of trip events minimizes The Zener diode used for voltage upstream inductive spikes clamping in a PolyZen micro-assembly was selected due to its relatively flat • Minimal power dissipation requirements voltage vs current response. This helps improve output • Single component placement voltage clamping, even when input voltage is high and diode currents are large. FEATURES An advanced feature of the PolyZen micro-assembly is that • Overvoltage transient suppression the Zener diode is thermally coupled to a resistively non- • Stable V vs fault current linear, polymer PTC (positive temperature coefficient) layer. Z This PTC layer is fully integrated into the device, and is • Time delayed, overvoltage trip electrically in series between VIN and the diode clamped VOUT. • Time delayed, reverse bias trip This advanced PTC layer responds to either extended diode • Multi-Watt power handling capability heating or overcurrent events by transitioning from a low to • Integrated device construction high resistance state, also known as ”tripping”. A tripped PTC • RoHS Compliant will limit current and generate voltage drop. It helps to protect both the Zener diode and the follow on electronics and TARGET APPLICATIONS effectively increases the diode’s power handling capability. • DC power port protection in portable The polymer enhanced Zener diode helps protect sensitive electronics portable electronics from damage caused by inductive voltage spikes, voltage transients, incorrect power supplies • DC power port protection for systems using and reverse bias. These devices are particularly suitable for barrel jacks for power input portable electronics and other low-power DC devices. • Internal overvoltage & transient suppression • DC output voltage regulation TYPICAL APPLICATION BLOCK DIAGRAM PPPooowwweeerrr SSSuuupppppplllyyy PPPooolllyyyZZZeeennn PPPrrrooottteeecccttteeeddd EEEllleeeccctttrrrooonnniiicccsss (((EEExxxttteeerrrnnnaaalll ooorrr IIInnnttteeerrrnnnaaalll))) GGGNNNDDD 222 VVVIIINNN 111 PPoollyyZZeenn +++ DDeevviiccee VVV OOOUUUTTT 333 RRReeeggguuulllaaattteeeddd RRR LLLoooaaaddd OOOuuutttpppuuuttt PPPrrrooottteeecccttteeeddd dddooowwwnnnssstttrrreeeaaammm eeellleeeccctttrrrooonnniiicccsss

PRODUCT: ZEN056V130A24LS PolyZen Polymer Enhanced Zener Diode DOCUMENT: SCD26730 Micro-Assemblies REV LETTER: F REV DATE: MAY 12, 2011 PAGE NO.: 2 OF 8 CONFIGURATION INFORMATION Pin Configuration (Top View) Recommended Pad Dimensions 2 GND 00..9944 mmmm ((00..003377””)) 22..2211 mmmm 00..3333 mmmm VIN 1 ((00..008877””)) ((00..001133 ””)) 00..9944 mmmm 3 V ((00..003377””)) OUT 00..5566 mmmm 22..8888 mmmm 00..5566 mmmm ((00..002222””)) ((00..11113355””)) ((00..002222””)) PIN DESCRIPTION Pin Number Pin Name Pin Function 1 V V . Protected input to Zener diode. IN IN 2 GND GND 3 V V . Zener regulated voltage output OUT OUT BLOCK DIAGRAM PPoollyymmeerr PPTTCC VV IINN VV OOUUTT ZZeenneerr DDiiooddee GGNNDD DEFINITION of TERMS I Current flowing through the PTC portion of the PTC II II circuit PPTTCC OOUUTT I RMS fault current flowing through the diode FLT I Current flowing out the V pin of the device OUT OUT VV Trip Event A condition where the PTC transitions to a high IINN resistance state, thereby significantly limiting I PTC VV and related currents, and significantly increasing OOUUTT the voltage drop between V and V . II IN OUT FFLLTT Trip Time the PTC portion of the device remains both Endurance powered and in a tripped state. GGNNDD

PRODUCT: ZEN056V130A24LS PolyZen Polymer Enhanced Zener Diode DOCUMENT: SCD26730 Micro-Assemblies REV LETTER: F REV DATE: MAY 12, 2011 PAGE NO.: 3 OF 8 GENERAL SPECIFICATIONS Operating Temperature -40º to +85ºC Storage Temperature -40º to +85ºC ELECTRICAL CHARACTERISTICS1-3, 11 (Typical unless otherwise specified) V(VZ )4 I 5 Leakage Current VInt( VM )a x8 IFLT Max9 TDriipspseiMpdaa xPti oo wn 1e 0 r Izt4 @H2O0LºDC R Typ6 R1Max7 (A) (A) (Ohms) (Ohms) VINT Test Test Test Max I Max Value Max Current FLT Voltage Voltage Test (V) (A) (W) Min Typ Max Current (A) (V) (V) Voltage (mA) +10 +24 5.45 5.6 5.75 0.1 1.3 5.25 10 0.12 0.16 24V 3A 1.0 24 -40 -16V Note 1: Electrical characteristics determined at 25ºC unless otherwise specified. Note 2: This device is intended for limited fault protection. Repeated trip events or extended trip endurance can degrade the device and may affect performance to specifications. Performance impact will depend on multiple factors including, but not limited to, voltage, trip current, trip duration, trip cycles, and circuit design. For details or ratings specific to your application contact TE Connectivity Circuit Protection directly. Note 3: Specifications developed using 1.0 ounce 0.045” wide copper traces on dedicated FR4 test boards. Performance in your application may vary. Note 4: I is the current at which V is measured (V = V ). Additional V values are available on request. zt z Z OUT Z Note 5: I : Maximum steady state I (current entering or exiting the V pin of the device) that will not generate a trip event at the HOLD PTC IN specified temperature. Specification assumes I (current flowing through the Zener diode) is sufficiently low so as to prevent FLT the diode from acting as a heat source. Testing is conducted with an “open” Zener. Note 6: R Typ: Resistance between V and V pins during normal operation at room temperature. IN OUT Note 7: R : The maximum resistance between V and V pins at room temperature, one hour after 1st trip or after reflow 1Max IN OUT soldering. Note 8: V Max: V Max relates to the voltage across the PPTC portion of the PolyZen device (V -V ). V Max is defined as INT INT IN OUT INT the voltage (V -V ) at which typical qualification devices (98% devices, 95% confidence) survived at least 100 trip cycles IN OUT and 24hours trip endurance at the specified voltage (V -V ) and current (I ). V Max testing is conducted using a IN OUT PTC INT "shorted" load (V = 0V). V Max is a survivability rating, not a performance rating. OUT INT Note 9: I Max: I Max relates to the stead state current flowing through the diode portion of the PolyZen device in a fault FLT FLT condition, prior to a trip event. I Max is defined as the current at which typical qualification devices (12 parts per lot from 3 FLT lots) survived 100 test cycles. RMS fault currents above I Max may permanently damage the diode portion of the PolyZen FLT device. Testing is conducted with NO load connected to V , such that I = 0. “Test voltage” is defined as the voltage OUT OUT between V to GND and includes the PolyZen Diode drop. Specification is dependent on the direction of current flow through IN the diode. I Max is a survivability rating, not a performance rating. FLT Note 10: The power dissipated by the device when in the “tripped” state, as measured on TE test boards (see note 3). Note 11: Specifications based on limited qualification data and subject to change. Min Typical Max MECHANICAL DIMENSIONS 3.85 mm 4 mm 4.15 mm Length L (0.152”) (0.16”) (0.163") 3.85 mm 4 mm 4.15 mm Width W (0.152”) (0.16”) (0.163") 1.4mm 1.7 mm 2.0 mm Height H (0.055”) (0.067”) (0.081”) Length 3.0 mm Ld - - Diode (0.118”) Height 1.0 mm Hd - - Diode (0.039”) 0.6 mm Offset O1 - - (0.024”) 0.7 mm Offset O2 - - (0.028”)

PRODUCT: ZEN056V130A24LS PolyZen Polymer Enhanced Zener Diode DOCUMENT: SCD26730 Micro-Assemblies REV LETTER: F REV DATE: MAY 12, 2011 PAGE NO.: 4 OF 8 SOLDER REFLOW RECOMMENDATIONS: Classification Reflow Profiles Profile Feature Pb-Free Assembly Average Ramp-Up Rate (Tsmax to Tp) 3° C/second max. Preheat • Temperature Min (Tsmin) 150 °C • Temperature Max (Tsmax) 200 °C • Time (tsmin to tsmax) 60-180 seconds Time maintained above: • Temperature (TL) 217 °C • Time (tL) 60-150 seconds Peak/Classification Temperature (Tp) 260 °C Time within 5 °C of actual Peak Temperature (tp) 20-40 seconds Ramp-Down Rate 6 °C/second max. Time 25 °C to Peak Temperature 8 minutes max.

PRODUCT: ZEN056V130A24LS PolyZen Polymer Enhanced Zener Diode DOCUMENT: SCD26730 Micro-Assemblies REV LETTER: F REV DATE: MAY 12, 2011 PAGE NO.: 5 OF 8 PACKAGING Packaging Tape & Reel Standard Box ZENXXXVXXXAXXLS 3,000 15,000 Reel Dimensions for PolyZen Devices A = 330 max N = 102 min W = 8.4 1 W = 11.1 2 MMaattttee FFiinniisshh TThheessee AArreeaa NNmmiinn AAmmaaxx Taped Component Dimensions for PolyZen Devices

PRODUCT: ZEN056V130A24LS PolyZen Polymer Enhanced Zener Diode DOCUMENT: SCD26730 Micro-Assemblies REV LETTER: F REV DATE: MAY 12, 2011 PAGE NO.: 6 OF 8 TYPICAL CHARACTERISTICS Typical Fault Response: ZEN056V130A24LS 20V, 3.5A Current Limited Source (I = 0) OUT 20 Vin (V) 18 16 Vout (V) ) A 14 ( I FLT (A) I 12 r o 10 ) 8 V ( 6 V 4 2 0 -0.02 0.02 0.06 0.10 0.14 0.18 Time (s) Pulse IV (300uSec Pulse) Pulse IV (300uSec Pulse) 8 10 ) 7 ZEN056VxxxAxxLS V ( UT 6 A) 5 VO (T 5 L age: 4 nt: IF 0 Volt 3 urre C -5 2 ZEN056VxxxAxxLS 0 0 0 0 0 1 .0 .0 .0 .0 .1 -10 0 0 0 1 00 01 1 -2 0 2 4 6 8 1 Current: I (A) Voltage: V (V) FLT OUT V Peak Vs I RMS (I = 0) Time to Trip Vs I RMS (I = 0) OUT FLT OUT FLT OUT 8 100 7.5 ec) ZEN056V130A24LS V) S 10 k ( 7 p ( a ri e 6.5 T 1 P o V OUT 5.56 me T 0.1 ZEN056V130A24LS Ti 5 0.01 0 2 4 6 8 10 0 2 4 6 8 10 I RMS(A) I RMS (A) FLT FLT

PRODUCT: ZEN056V130A24LS PolyZen Polymer Enhanced Zener Diode DOCUMENT: SCD26730 Micro-Assemblies REV LETTER: F REV DATE: MAY 12, 2011 PAGE NO.: 7 OF 8 VOUT Peak Vs IFLT (IOUT = 0) Time to Trip Vs IFLT RMS (IOUT = 0) 0 1 ZENxxxV130A24LS ZENxxxV130A24LS -0.2 c) e S -0.4 ( 0.1 V) p (T -0.6 Tri U o O T V -0.8 e 0.01 m -1 Ti -1.2 0.001 -50 -40 -30 -20 -10 0 -50 -40 -30 -20 -10 0 I RMS(A) I RMS (A) FLT FLT Temperature Effect on I (I = 0) Hold FLT Time to Trip Vs IPTC RMS (IFLT = 0) 2.50 10 ZENxxxV130A24LS ZENxxxV130A24LS ) 2.00 c e 1 S ( A) 1.50 p (old 1.00 o Tri 0.1 H T I e m 0.01 0.50 Ti 0.00 0.001 -40 -20 0 20 40 60 80 100 0 10 20 30 40 Ambient Temperature (C) I RMS (A) PTC Temperature Effect on R Typ 0.40 ZENxxxV130A24LS 0.30 ) s m h O 0.20 ( p y T R 0.10 0.00 20 40 60 80 Ambient Temperature (C)

PRODUCT: ZEN056V130A24LS PolyZen Polymer Enhanced Zener Diode DOCUMENT: SCD26730 Micro-Assemblies REV LETTER: F REV DATE: MAY 12, 2011 PAGE NO.: 8 OF 8 Materials Information ROHS Compliant ELV Compliant Pb-Free Halogen Free* HF * Halogen Free refers to: Br≤900ppm, Cl≤900ppm, Br+Cl≤1500ppm. Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of each product for their applications. Tyco Electronics Corporation and its affiliates in the TE Connectivity Ltd. group of companies (“TE”) reserves the right to change or update, without notice, any information contained in this publication; to change, without notice, the design, construction, processing, or specification of any product; and to discontinue or limit production or distribution of any product. TE assumes no responsibility for the use of its product or for any infringement of patents or other rights of third parties resulting from the use of its product. No license is granted by implication or otherwise under any patent or proprietary right of TE except the right to use such product for the purpose for which it is sold. This publication supersedes and replaces all information previously supplied. Without expressed or written consent by an officer of TE, TE does not authorize the use of any of its products as components in nuclear facility applications, aerospace, or in critical life support devices or systems. TE’ only obligations are those in the TE Standard Terms and Conditions of Sale and in no case will TE be liable for any incidental, indirect, or consequential damages arising from the sale, resale, use, or misuse of its products. © 2006, 2011 Tyco Electronics Corporation, a TE Connectivity Ltd. Company. All rights reserved.