MPSW45, MPSW45A One Watt Darlington Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER 1 Collector−Emitter Voltage MPSW45 VCES 40 Vdc MPSW45A 50 Collector−Base Voltage MPSW45 VCBO 50 Vdc MPSW45A 60 Emitter−Base Voltage VEBO 12 Vdc Collector Current − Continuous IC 1.0 Adc TO−92 1 WATT Total Device Dissipation @ TA = 25°C PD 1.0 W (TO−226) Derate above 25°C 8.0 mW/°C 1 CASE 29−10 Total Device Dissipation @ TC = 25°C PD 2.5 W 123 2 3 STYLE 1 Derate above 25°C 20 mW/°C STRAIGHT LEAD BENT LEAD Operating and Storage Junction TJ, Tstg −55 to +150 °C BULK PACK TAAMPMEO & PRAECEKL Temperature Range THERMAL CHARACTERISTICS MARKING DIAGRAM Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient R(cid:2)JA 125 °C/W MPS Thermal Resistance, Junction−to−Case R(cid:2)JC 50 °C/W W45x AYWW(cid:2) Stresses exceeding Maximum Ratings may damage the device. Maximum (cid:2) Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MPSW45x=Device Code x = 45A Devices A =Assembly Location Y =Year WW =Work Week (cid:2) =Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2010 1 Publication Order Number: August, 2010 − Rev. 4 MPSW45/D

MPSW45, MPSW45A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage V(BR)CES Vdc (IC = 100 (cid:3)Adc, VBE = 0) MPSW45 40 − MPSW45A 50 − Collector−Base Breakdown Voltage V(BR)CBO Vdc (IC = 100 (cid:3)Adc, IE = 0) MPSW45 50 − MPSW45A 60 − Emitter−Base Breakdown Voltage V(BR)EBO 12 − Vdc (IE = 10 (cid:3)Adc, IC = 0) Collector Cutoff Current ICBO nAdc (VCB = 30 Vdc, IE = 0) MPSW45 − 100 (VCB = 40 Vdc, IE = 0) MPSW45A − 100 Emitter Cutoff Current IEBO − 100 nAdc (VEB = 10 Vdc, IC = 0) ON CHARACTERISTICS (Note 1) DC Current Gain hFE − (IC = 200 mAdc, VCE = 5.0 Vdc) 25,000 150,000 (IC = 500 mAdc, VCE = 5.0 Vdc) 15,000 − (IC = 1.0 Adc, VCE = 5.0 Vdc) 4,000 − Collector−Emitter Saturation Voltage VCE(sat) − 1.5 Vdc (IC = 1.0 Adc, IB = 2.0 mAdc) Base−Emitter Saturation Voltage VBE(sat) − 2.0 Vdc (IC = 1.0 Adc, IB = 2.0 mAdc) Base−Emitter On Voltage VBE(on) − 2.0 Vdc (IC = 1.0 Adc, VCE = 5.0 Vdc) SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product fT 100 − MHz (IC = 200 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Collector−Base Capacitance Ccb − 6.0 pF (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width (cid:2) 300 (cid:3)s; Duty Cycle (cid:2) 2.0%. RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model http://onsemi.com 2

MPSW45, MPSW45A NOISE CHARACTERISTICS (V = 5.0 Vdc, T = 25°C) CE A 500 2.0 BANDWIDTH = 1.0 Hz BANDWIDTH = 1.0 Hz RS ≈ 0 1.0 200 V) A) 0.7 GE (n 100 NT (p 0.5 IC = 1.0 mA TA 10 (cid:3)A RE 0.3 OL 50 UR 0.2 OISE V 100 (cid:3)A OISE C 0.1 100 (cid:3)A e, Nn 20 IC = 1.0 mA i, Nn 00..0075 10 (cid:3)A 10 0.03 5.0 0.02 10 20 50 100200 500 1(cid:2)k 2(cid:2)k 5(cid:2)k 10(cid:2)k20(cid:2)k 50(cid:2)k 100(cid:2)k 10 20 50 100200 500 1(cid:2)k 2(cid:2)k 5(cid:2)k 10(cid:2)k 20(cid:2)k 50(cid:2)k 100(cid:2)k f, FREQUENCY (Hz) f, FREQUENCY (Hz) Figure 2. Noise Voltage Figure 3. Noise Current 200 14 V) n BANDWIDTH = 10 Hz TO 15.7 kHz E ( 12 G A BANDWIDTH = 10 Hz TO 15.7 kHz T 100 OL B) 10 E V 70 IC = 10 (cid:3)A E (d 10 (cid:3)A S R OI U 8.0 N 50 G ND E FI 100 (cid:3)A DEBA 30 100 (cid:3)A NOIS 6.0 L WI 20 NF, 4.0 IC = 1.0 mA A OT 1.0 mA 2.0 T , T V 10 0 1.0 2.0 5.0 10 20 50 100 200 500 1000 1.0 2.0 5.0 10 20 50 100 200 500 1000 RS, SOURCE RESISTANCE (kΩ) RS, SOURCE RESISTANCE (kΩ) Figure 4. Total Wideband Noise Voltage Figure 5. Wideband Noise Figure http://onsemi.com 3

MPSW45, MPSW45A SMALL−SIGNAL CHARACTERISTICS 20 4.0 N VCE = 5.0 V 10 TJ = 25°C T GAI 2.0 fT =J =1 0205 °MCHz N F) E p R CITANCE ( 57..00 Cibo Cobo GNAL CUR 10..08 PA SI A - 0.6 C, C MALL 3.0 S 0.4 |, e hf | 2.0 0.2 0.04 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 0.5 1.0 2.0 0.5 10 20 50 100 200 500 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 6. Capacitance Figure 7. High Frequency Current Gain 200(cid:2)k S) 3.0 TJ = 125°C OLT TJ = 25°C V 100(cid:2)k E ( 2.5 AIN 7500(cid:2)(cid:2)kk 25°C LTAG IC = 10 mA 50 mA 250 mA 500 mA G O NT 30(cid:2)k R V 2.0 E E R T UR 20(cid:2)k MIT h, DC CFE 71.00(cid:2)(cid:2)kk -(cid:3)55°C ECTOR-E 1.5 5.0(cid:2)k VCE = 5.0 V OLL 1.0 C 3.0(cid:2)k , E 2.0(cid:2)k VC 0.5 5.0 7.0 10 20 30 50 70 100 200 300 500 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 5001000 IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT ((cid:3)A) Figure 8. DC Current Gain Figure 9. Collector Saturation Region 1.6 -(cid:3)1.0 TJ = 25°C °V/C) *APPLIES FOR IC/IB ≤ hFE/3.0 25°C TO 125°C m 1.4 S ( -(cid:3)2.0 *R(cid:2)VC FOR VCE(sat) T VOLTS) 1.2 VBE(sat) @ IC/IB = 1000 FFICIEN -(cid:3)3.0 -(cid:3)55°C TO 25°C E ( OE G VBE(on) @ VCE = 5.0 V C 25°C TO 125°C LTA 1.0 RE -(cid:3)4.0 O U V, V RAT (cid:2)VB FOR VBE E P 0.8 M -(cid:3)5.0 -(cid:3)55°C TO 25°C VCE(sat) @ IC/IB = 1000 TE , V θ 0.6 R -(cid:3)6.0 5.0 7.0 10 20 30 50 70 100 200 300 500 5.0 7.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 10. “On” Voltages Figure 11. Temperature Coefficients http://onsemi.com 4

MPSW45, MPSW45A 1.0 0.7 D = 0.5 0.5 NT THERMALNORMALIZED) 00..32 0.2 0.1 0.05 SINGLE PULSE NSIENCE ( 00.0.17 SINGLE PULSE AA RT 0.05 TS r(t), RESI 0.03 ZθJC(t) = r(t) • RθJC(cid:4)TJ(pk) - TC = P(pk) ZθJC(t) 0.02 ZθJA(t) = r(t) • RθJA(cid:4)TJ(pk) - TA = P(pk) ZθJA(t) 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0(cid:2)k 2.0(cid:2)k 5.0(cid:2)k 10(cid:2)k t, TIME (ms) Figure 12. Thermal Response 1.0(cid:2)k FIGURE A 700 1.0 ms mA) 500 tP RENT ( 320000 TA = 25°C TC = 25°C1.0 s100 (cid:3)s PP PP R U C R 100 O T 70 C LE 50 OL t1 C 30 , C CURRENT LIMIT I 20 THERMAL LIMIT 1/f SECOND BREAKDOWN LIMIT 10 DUTY(cid:2)CYCLE(cid:3)t1(cid:2)f(cid:3)t1 0.4 0.6 1.0 2.0 4.0 6.0 10 20 40 tP VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) PEAK PULSE POWER = PP Figure 13. Active Region Safe Operating Area Design Note: Use of Transient Thermal Resistance Data ORDERING INFORMATION Device Package Shipping† MPSW45G TO−92 5,000 Units / Box (Pb−Free) MPSW45RLREG TO−92 2,000 / Tape & Reel (Pb−Free) MPSW45A TO−92 5,000 Units / Box MPSW45AG TO−92 5,000 Units / Box (Pb−Free) MPSW45ARLRA TO−92 2,000 / Tape & Reel MPSW45ARLRAG TO−92 2,000 / Tape & Reel (Pb−Free) MPSW45AZL1 TO−92 2,000 / Ammo Pack MPSW45AZL1G TO−92 2,000 / Ammo Pack (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5

MPSW45, MPSW45A PACKAGE DIMENSIONS TO−92 (TO−226) 1 WATT CASE 29−10 ISSUE O A NOTES: STRAIGHT LEAD 1. DIMENSIONING AND TOLERANCING PER ANSI BULK PACK Y14.5M, 1994. B 2. CONTROLLING DIMENSION: INCHES. R 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN DIMENSIONS P P AND L. DIMENSIONS D AND J APPLY BETWEEN DI­ L MENSIONS L AND K MINIMUM. THE LEAD F DIMENSIONS ARE UNCONTROLLED IN DIMENSION K P AND BEYOND DIMENSION K MINIMUM. INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.175 0.205 4.44 5.21 B 0.290 0.310 7.37 7.87 X X D C 0.125 0.165 3.18 4.19 G D 0.018 0.021 0.46 0.53 H J F 0.016 0.019 0.41 0.48 G 0.045 0.055 1.15 1.39 V C HJ 00..009158 00..100254 20..4426 20..6661 SECTION X−X K 0.500 --- 12.70 --- 1 N L 0.250 --- 6.35 --- N 0.080 0.105 2.04 2.66 STYLE 1: N P --- 0.100 --- 2.54 PIN 1. EMITTER R 0.135 --- 3.43 --- 2. BASE V 0.135 --- 3.43 --- 3. COLLECTOR A NOTES: R BENT LEAD 1. DIMENSIONING AND TOLERANCING PER ASME TAPE & REEL Y14.5M, 1994. B 2. CONTROLLING DIMENSION: INCHES. AMMO PACK 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN DIMENSIONS P P AND L. DIMENSIONS D AND J APPLY BETWEEN T DIMENSIONS L AND K MINIMUM. THE LEAD DIMENSIONS ARE UNCONTROLLED IN DIMENSION SPELAATNIENG K P AND BEYOND DIMENSION K MINIMUM. INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.175 0.205 4.44 5.21 B 0.290 0.310 7.37 7.87 X X D C 0.125 0.165 3.18 4.19 G D 0.018 0.021 0.46 0.53 J G 0.094 0.102 2.40 2.80 J 0.018 0.024 0.46 0.61 V K 0.500 --- 12.70 --- C N 0.080 0.105 2.04 2.66 SECTION X−X P --- 0.100 --- 2.54 1 N R 0.135 --- 3.43 --- V 0.135 --- 3.43 --- ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5773−3850 Sales Representative http://onsemi.com MPSW45/D 6