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  • 型号: FMMT734TA
  • 制造商: Diodes Inc.
  • 库位|库存: xxxx|xxxx
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FMMT734TA产品简介:

ICGOO电子元器件商城为您提供FMMT734TA由Diodes Inc.设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 FMMT734TA价格参考。Diodes Inc.FMMT734TA封装/规格:晶体管 - 双极 (BJT) - 单, 双极 (BJT) 晶体管 PNP - 达林顿 100V 800mA 140MHz 625mW 表面贴装 SOT-23-3。您可以下载FMMT734TA参考资料、Datasheet数据手册功能说明书,资料中有FMMT734TA 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

TRANS DARL PNP 100V 0.8A SOT23-3达林顿晶体管 PNP Darlington

产品分类

晶体管(BJT) - 单路分离式半导体

品牌

Diodes Incorporated

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

晶体管,达林顿晶体管,Diodes Incorporated FMMT734TA-

数据手册

点击此处下载产品Datasheet

产品型号

FMMT734TA

PCN其它

点击此处下载产品Datasheet

RoHS指令信息

http://diodes.com/download/4349

不同 Ib、Ic时的 Vce饱和值(最大值)

1.05V @ 5mA,1A

不同 Ic、Vce 时的DC电流增益(hFE)(最小值)

20000 @ 100mA,5V

产品目录页面

点击此处下载产品Datasheet

产品种类

达林顿晶体管

供应商器件封装

SOT-23-3

其它名称

FMMT734DKR

其它图纸

功率-最大值

625mW

功率耗散

625 mW

包装

Digi-Reel®

发射极-基极电压VEBO

12 V

商标

Diodes Incorporated

安装类型

表面贴装

安装风格

SMD/SMT

封装

Reel

封装/外壳

TO-236-3,SC-59,SOT-23-3

封装/箱体

SOT-23

工厂包装数量

3000

晶体管极性

PNP

晶体管类型

PNP - 达林顿

最大工作温度

+ 150 C

最大直流电集电极电流

0.8 A

最大集电极截止电流

0.01 uA

最小工作温度

- 55 C

标准包装

1

电压-集射极击穿(最大值)

100V

电流-集电极(Ic)(最大值)

800mA

电流-集电极截止(最大值)

200nA

直流集电极/BaseGainhfeMin

20000 at 100 mA at 5 V, 15000 at 1 A at 5 V, 5000 at 2 A at 5 V

系列

FMMT734

配置

Single

集电极—发射极最大电压VCEO

100 V

集电极—基极电压VCBO

100 V

集电极连续电流

- 0.8 A

频率-跃迁

140MHz

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PDF Datasheet 数据手册内容提取

FMMT734 100V PNP DARLINGTON TRANSISTOR IN SOT23 Features Mechanical Data  BVCEO > -100V  Case: SOT23  IC = -800mA High Continuous Collector Current  Case Material: Molded Plastic, “Green” Molding Compound  Darlington Transistor hFE > 20k @ 100mA for High Gain  UL Flammability Classification Rating 94V-0  High Gain Hold-Up to 5A  Moisture Sensitivity: Level 1 per J-STD-020  625mW Power Dissipation  Terminals: Finish – Matte Tin Plated Leads, Solderable per  Complementary Darlington NPN Type: FMMT634 MIL-STD-202, Method 208  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Weight 0.008 grams (Approximate)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability SOT23 Top View Top View Pin-Out Device Symbol Ordering Information (Note 4) Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity Per Reel FMMT734TA AEC-Q101 734 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 7ZF3E4 734 = Product Type Marking Code FMMT734 1 of 7 November 2015 Document Number: DS33121 Rev. 2 - 2 www.diodes.com © Diodes Incorporated

FMMT734 Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -100 V Emitter-Base Voltage VEBO -12 V Continuous Collector Current IC -800 mA Peak Pulse Current ICM -5 A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Power Dissipation (Note 5) PD 625 mW Power Dissipation (Note 6) PD 806 mW Thermal Resistance, Junction to Ambient (Note 5) RθJA 200 C/W Thermal Resistance, Junction to Ambient (Note 6) RθJA 155 C/W Thermal Resistance, Junction to Leads (Note 7) RθJL 194 C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 C ESD Ratings (Note 8) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 2,000 V 1C Electrostatic Discharge - Machine Model ESD MM 200 V A Notes: 5. For a device surface mounted on 25mm X 25mm FR-4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 6. Same as note 5, except the device is measured at t ≤ 5 sec. 7. Thermal resistance from junction to solder-point (at the end of the collector lead). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. FMMT734 2 of 7 November 2015 Document Number: DS33121 Rev. 2 - 2 www.diodes.com © Diodes Incorporated

FMMT734 Thermal Characteristics and Derating Information W) 220 W) 0.7 C/ 128000 Tamb=25oC n ( 0.6 o o e ( 160 ati 0.5 anc 112400 ssip 0.4 esist 10800 D=0.5 er Di 0.3 mal R 4600 D=0.2 D=0.D0=50.1 Pow 0.2 0.1 er 20 ax h Single Pulse M T 1100000µμ 1m 10m 100m 1 10 100 1k 0.00 25 50 75 100 125 150 175 Pulse Width (s) Temperature (oC) Transient Thermal Impedance Derating Curve 100 Single Pulse ) W T =25oC amb ( r 10 e w o P m u 1 m axi M 0.1 110000µμ 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Power Dissipation FMMT734 3 of 7 November 2015 Document Number: DS33121 Rev. 2 - 2 www.diodes.com © Diodes Incorporated

FMMT734 Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Collector-Base Breakdown Voltage BVCBO -100 -130 - V IC = -100µA Collector-Emitter Breakdown Voltage (Note 9) BVCEO -100 -116 - V IC = -5mA Emitter-Base Breakdown Voltage BVEBO -12 -17 - V IE = -100µA Collector Cutoff Current ICBO - - -10 nA VCB = -80V Collector Cutoff Current ICES - - -200 nA VCES = -80V Emitter Cutoff Current IEBO - - -10 nA VEB = -7V ON CHARACTERISTICS (Note 9) - 60,000 - IC = -10mA, VCE = -5V 20,000 60,000 - IC = -100mA, VCE = -5V Static Forward Current Transfer Ratio hFE 155,0,00000 5105,,000000 -- - IICC == --12AA,, VVCCEE == --55VV - 150 - IC = -5A, VCE = -5V - 20,000 - IC = -1A, VCE = -2V -0.68 -0.75 IC = - 100mA, IB = -1mA -0.72 -0.80 IC = - 250mA, IB = -1mA Collector-Emitter Saturation Voltage VCE(sat) - --00..7886 --00..8967 V IICC == -- 580000mmAA,, IIBB == --55mmAA -0.72 - IC = - 800mA, IB = -5mA, TJ= +150°C -0.90 -1.05 IC = - 1A, IB = -5mA Base-Emitter Saturation Voltage VBE(sat) - -1.6 -1.75 V IC = -1A, IB = -5mA Base-Emitter Turn-On Voltage VBE(on) - -1.3 -1.75 V IC= -1A, VCE=-5V SMALL SIGNAL CHARACTERISTICS Transition Frequency fT - 140 - MHz Vf =C E1 =0 0-M10HVz, IC = -10mA, Output Capacitance Cobo - 14 25 pF VCB = -10V, f = 1MHz Turn-On Time t(on) - 460 - ns IC=-500mA, VCC=-20V Turn-Off Time t(off) - 1200 - ns IB=±1mA Note: 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. FMMT734 4 of 7 November 2015 Document Number: DS33121 Rev. 2 - 2 www.diodes.com © Diodes Incorporated

FMMT734 Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.) FMMT734 5 of 7 November 2015 Document Number: DS33121 Rev. 2 - 2 www.diodes.com © Diodes Incorporated

FMMT734 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. SOT23 All 7° H SOT23 GAUGE PLANE Dim Min Max Typ 0.25 A 0.37 0.51 0.40 J K1 K B 1.20 1.40 1.30 C 2.30 2.50 2.40 a D 0.89 1.03 0.915 A M F 0.45 0.60 0.535 G 1.78 2.05 1.83 L L1 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 C B L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 8° D All Dimensions in mm F G Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. SOT23 Y Dimensions Value (in mm) Z Z 2.9 C X 0.8 Y 0.9 C 2.0 E 1.35 X E Note: For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between device terminals and PCB tracking. FMMT734 6 of 7 November 2015 Document Number: DS33121 Rev. 2 - 2 www.diodes.com © Diodes Incorporated

FMMT734 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated www.diodes.com FMMT734 7 of 7 November 2015 Document Number: DS33121 Rev. 2 - 2 www.diodes.com © Diodes Incorporated

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