DSC7003 Silicon NPN epitaxial planar type For low frequency amplification Unit: mm Complementary to DSA7003  Features  Low collector-emitter saturation voltage V CE(sat)  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  Marking Symbol: 5A  Packaging DSC7003×0L Embossed type (Thermo-compression sealing): 1 000 pcs / reel (standard)  Absolute Maximum Ratings T = 25°C a Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V 60 V CBO 1: Base Collector-emitter voltage (Base open) V 50 V CEO 2: Collector Emitter-base voltage (Collector open) V 5 V EBO 3: Emitter Collector current IC 1 A Panasonic MiniP3-F2-B Peak collector current I 1.5 A JEITA SC-62 CP Collector power dissipation P 1 W Code TO-243 C Junction temperature T 150 °C j Operating ambient temperature T –40 to +85 °C opr Storage temperature T –55 to +150 °C stg Note) Printed circuit board: Copper foil area of 1 cm2 or more, and the board thickness of 1.7 mm for the collector portion Absolute maximum rating without heat sink for P is 0.5 W C  Electrical Characteristics T = 25°C±3°C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 mA, I = 0 60 V CBO C E Collector-emitter voltage (Base open) V I = 2 mA, I = 0 50 V CEO C B Emitter-base voltage (Collector open) V I = 10 mA, I = 0 5 V EBO E C Collector-base cutoff current (Emitter open) I V = 20 V, I = 0 0.1 mA CBO CB E h *2 V = 10 V, I = 500 mA 120 340 Forward current transfer ratio *1 FE1 CE C  h V = 5 V, I = 1 A 50 FE2 CE C Collector-emitter saturation voltage *1 V I = 500 mA, I = 50 mA 0.15 0.4 V CE(sat) C B Base-emitter saturation voltage *1 V I = 500 mA, I = 50 mA 0.9 1.2 V BE(sat) C B Transition frequency f V = 10 V, I = 50 mA 170 MHz T CE C Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 10 20 pF (Common base, input open circuited) ob CB E Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Code R S 0 Rank R S No-rank h 120 to 240 170 to 340 120 to 340 FE1 Marking Symbol 5AR 5AS 5A Product of no-rank is not classified and have no marking symbol for rank. Publication date: February 2014 Ver. EED 1

DSC7003 DSC7003_PC-Ta DSC7003_IC-VCE DSC7003_hFE-IC P  T I  V h  I C a C CE FE C 1 250 1 200 300 Copper plate at the collector is T = 25°C ()ollector power dissipation P mWC1275 055000000 mino trhei ctkhnanes 1s..0 cm2 in area, 1.7 mm Collector current I (mA) C1 086420000000000 a IB = 8 mA 7 mA654321 mmmmmmAAAAAA Forward current transfer ratio hFE 22115050500000 Ta −=4 28055°°°CCC C 0 0 0 0 40 80 120 160 200 0 2 4 6 8 10 12 1 10 102 103 Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Collector current IC (mA) DSC7003_VCEsat-IC DSC7003_IC-VBE DSC7003_Cob-VCB V  I I  V C  V CE(sat) C C BE ob CB ctor-emitter saturation voltage V (V) CE(sat) 01.110 Ta = 85°C 25°CIC / IB = 10 Collector current I (mA) C11 208642000000000000 VCE = 10 V Ta = 85°C 25°C− 40°C ctor output capacitance C (pF) obmmon base, input open circuited) 2110505 IfTE a = == 1 02 M5°HCz Colle0.010 .1 1 10− 40°C 100 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Colle (Co 0 1 10 100 Collector current IC (mA) Base-emitter voltage VBE (V) Collector-base voltage VCB (V) DSC7003_fT-IC f  I T C 250 V = 10 V CE T = 25°C z) 200 a H M (T y f 150 c n e u q e n fr 100 o siti n Tra 50 0 1 10 102 103 Collector current I (mA) C Ver. EED 2

DSC7003 MiniP3-F2-B Unit: mm  Land Pattern (Reference) (Unit: mm) Ver. EED 3

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