BC856ALT1G Series General Purpose Transistors PNP Silicon Features www.onsemi.com • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable COLLECTOR • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS 3 Compliant 1 BASE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) 2 Rating Symbol Value Unit EMITTER Collector-Emitter Voltage VCEO V BC856, SBC856 −65 BC857, SBC857 −45 BC858, NSVBC858, BC859 −30 3 Collector-Base Voltage VCBO V 1 BC856, SBC856 −80 BC857, SBC857 −50 2 BC858, NSVBC858, BC859 −30 SOT−23 (TO−236) Emitter−Base Voltage VEBO −5.0 V CASE 318 STYLE 6 Collector Current − Continuous IC −100 mAdc Collector Current − Peak IC −200 mAdc THERMAL CHARACTERISTICS MARKING DIAGRAM Characteristic Symbol Max Unit To(taNlo Dtee v1i)c eT AD =is 2si5p°aCtion FR−5 Board, PD 225 mW xx (cid:2)M(cid:2) Derate above 25°C 1.8 mW/°C 1 Thermal Resistance, R(cid:2)JA 556 °C/W Junction−to−Ambient xx =Device Code Total Device Dissipation Alumina PD xx = (Refer to page 6) Substrate, (Note 2) TA = 25°C 300 mW M =Date Code* Derate above 25°C 2.4 mW/°C (cid:2) =Pb−Free Package Thermal Resistance, R(cid:2)JA 417 °C/W (Note: Microdot may be in either location) Junction−to−Ambient *Date Code orientation and/or overbar may vary depending upon manufacturing location. Junction and Storage Temperature TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. See detailed ordering and shipping information in the package 1. FR−5 = 1.0 x 0.75 x 0.062 in. dimensions section on page 6 of this data sheet. 2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina. © Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: October, 2016 − Rev. 15 BC856ALT1/D

BC856ALT1G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage BC856, SBC856 Series V(BR)CEO −65 − − V (IC = −10 mA) BC857, SBC857 Series −45 − − BC858, NSBVC858 BC859 Series −30 − − Collector−Emitter Breakdown Voltage BC856 S, SBC856eries V(BR)CES −80 − − V (IC = −10 (cid:3)A, VEB = 0) BC857A, SBC857A, BC857B, SBC857B Only −50 − − BC858, NSVB858, BC859 Series −30 − − Collector−Base Breakdown Voltage BC856, SBC856 Series V(BR)CBO −80 − − V (IC = −10 (cid:3)A) BC857, SBC857 Series −50 − − BC858, NSVBC858, BC859 Series −30 − − Emitter−Base Breakdown Voltage BC856, SBC856 Series V(BR)EBO −5.0 − − V (IE = −1.0 (cid:3)A) BC857, SBC857 Series −5.0 − − BC858, NSVBC858, BC859 Series −5.0 − − Collector Cutoff Current (VCB = −30 V) ICBO − − −15 nA Collector Cutoff Current (VCB = −30 V, TA = 150°C) − − −4.0 (cid:3)A ON CHARACTERISTICS DC Current Gain BC856A, SBC856A, BC857A, SBC857A, BC858A hFE − 90 − − (IC = −10 (cid:3)A, VCE = −5.0 V) BC856B, SBC856B, BC857B, SBC857B, − 150 − BC858B, NSVBC858B BC857C, SBC857C BC858C − 270 − (IC = −2.0 mA, VCE = −5.0 V) BC856A, SBC856A, BC857A, 125 180 250 SBC857A, BC858A BC856B, SBC856B, BC857B, SBC857B, BC858B, 220 290 475 NSVBC858B, BC859B BC857C, SBC857C, BC858C, BC859C 420 520 800 Collector−Emitter Saturation Voltage VCE(sat) V (IC = −10 mA, IB = −0.5 mA) − − −0.3 (IC = −100 mA, IB = −5.0 mA) − − −0.65 Base−Emitter Saturation Voltage VBE(sat) V (IC = −10 mA, IB = −0.5 mA) − −0.7 − (IC = −100 mA, IB = −5.0 mA) − −0.9 − Base−Emitter On Voltage VBE(on) V (IC = −2.0 mA, VCE = −5.0 V) −0.6 − −0.75 (IC = −10 mA, VCE = −5.0 V) − − −0.82 SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product fT 100 − − MHz (IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz) Output Capacitance Cob − − 4.5 pF (VCB = −10 V, f = 1.0 MHz) Noise Figure NF dB (IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 k(cid:4), f = 1.0 kHz, BW = 200 Hz) BC856, SBC856, BC857, SBC857, BC858, NSVBC858 Series − − 10 BC859 Series − − 4.0 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2

BC856ALT1G Series BC857/BC858/BC859/SBC857/NSVBC858 2.0 -1.0 AIN 1.5 VCE = -10 V -0.9 TA = 25°C T G TA = 25°C -0.8 VBE(sat) @ IC/IB = 10 N RE 1.0 S) -0.7 ED DC CUR 0.7 TAGE (VOLT --00..65 VBE(on) @ VCE = -10 V LIZ 0.5 OL -0.4 A V M V, -0.3 R O N -0.2 h, FE 0.3 -0.1 VCE(sat) @ IC/IB = 10 0.2 0 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc) Figure 1. Normalized DC Current Gain Figure 2. “Saturation” and “On” Voltages -2.0 1.0 LTAGE (V) -1.6 TA = 25°C °T (mV/C) 1.2 -55°C to +125°C O N V E R CI 1.6 TE -1.2 FFI T E EMI CO 2.0 CTOR- -0.8 -IC1 0= mA IC = -50 mA IC = -200 mA ATURE 2.4 V, COLLECE -0.4 IC = -20 mA IC = -100 mA , TEMPERVB 2.8 0 θ -0.02 -0.1 -1.0 -10 -20 -0.2 -1.0 -10 -100 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 3. Collector Saturation Region Figure 4. Base−Emitter Temperature Coefficient z) 10 H 400 M Cib T ( 300 C 7.0 U TA = 25°C OD 200 R TANCE (pF) 53..00 Cob NDWIDTH P 110500 VTAC E= =2 5-°1C0 V CI A 80 A B CAP N - 60 C, 2.0 GAI - 40 T N E 30 R R U C 1.0-0.4 -0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40 f(cid:2), T 20-0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc) Figure 5. Capacitances Figure 6. Current−Gain − Bandwidth Product www.onsemi.com 3

BC856ALT1G Series BC856/SBC856 -1.0 ED) TJ = 25°C RMALIZ VTAC E= =2 5-°5C.0 V -0.8 VBE(sat) @ IC/IB = 10 O S) N 2.0 T N ( OL -0.6 GAI 1.0 E (V VBE @ VCE = -5.0 V T G N A CURRE 0.5 V, VOLT -0.4 DC -0.2 , FE 0.2 VCE(sat) @ IC/IB = 10 h 0 -0.1 -0.2 -1.0-2.0 -5.0 -10 -20 -50 -100-200 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. DC Current Gain Figure 8. “On” Voltage S) -2.0 -1.0 LT C) O ° R-EMITTER VOLTAGE (V ---110...268 -1I0C m=A -20 mA -50 mA -100 mA -200 mA URE COEFFICIENT (mV/ ---112...482 (cid:2)VB for VBE -55°C to 125°C O AT LLECT -0.4 MPER -2.6 O E V, CCE 0 TJ = 25°C θ, TVB -3.0 -0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 9. Collector Saturation Region Figure 10. Base−Emitter Temperature Coefficient 40 T C DU VCE = -5.0 V TJ = 25°C RO 500 P F) 20 Cib TH p D E ( WI 200 C D N N PACITA 81.00 N - BA 100 A AI C 6.0 G 50 C, Cob T- N E 4.0 R R 20 U C (cid:2), T 2.0 f -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -1.0 -10 -100 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 11. Capacitance Figure 12. Current−Gain − Bandwidth Product www.onsemi.com 4

BC856ALT1G Series 1.0 0.7 D = 0.5 0.5 NSIENT THERMALNCE (NORMALIZED) 0000.0...3217 0.2 0.1 0.05 SINGLSEI NPGULLES EPULSE P(pk) ZRZ(cid:2)(cid:2)(cid:2)JJJCAC(( tt=)) ==8 3 rr.((3tt))° RRC(cid:2)(cid:2)/WJJAC MAX TRASTA 0.05 t1 R(cid:2)JA = 200°C/W MAX r(t), RESI 0.03 t2 DPU CLUSREV TERSA AINP PSLHYO FWONR POWER 0.02 DUTY CYCLE, D = t1/t2 READ TIME AT t1 TJ(pk) - TC = P(pk) R(cid:2)JC(t) 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0(cid:3)k 2.0(cid:3)k 5.0(cid:3)k 10(cid:3)k t, TIME (ms) Figure 13. Thermal Response -200 The safe operating area curves indicate IC−VCE limits of 1 s 3 ms the transistor that must be observed for reliable operation. A)-100 Collector load lines for specific circuits must fall below the m RENT ( -50 TA = 25°C TJ = 25°C limTithse i dnadtiac aotfe dF ibgyu rteh e1 4a pisp lbicaasebdle u cpuornv eT.J(pk) = 150°C; TC or R U T is variable depending upon conditions. Pulse curves are C A OR BC558, BC559 valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) T C BC557 may be calculated from the data in Figure 13. At high case or E -10 LL BC556 ambient temperatures, thermal limitations will reduce the O , CC-5.0 BONDING WIRE LIMIT power that can be handled to values less than the limitations I THERMAL LIMIT imposed by the secondary breakdown. SECOND BREAKDOWN LIMIT -2.0 -1.0 -5.0 -10 -30 -45 -65 -100 VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 14. Active Region Safe Operating Area www.onsemi.com 5

BC856ALT1G Series ORDERING INFORMATION Device Marking Package Shipping† BC856ALT1G 3A SOT−23 3,000 / Tape & Reel (Pb−Free) SBC856ALT1G* BC856ALT3G 10,000 / Tape & Reel BC856BLT1G 3B SOT−23 3,000 / Tape & Reel (Pb−Free) SBC856BLT1G* BC856BLT3G 10,000 / Tape & Reel SBC856BLT3G* BC857ALT1G 3E SOT−23 3,000 / Tape & Reel (Pb−Free) SBC857ALT1G* BC857BLT1G 3F SOT−23 3,000 / Tape & Reel (Pb−Free) SBC857BLT1G* BC857BLT3G 10,000 / Tape & Reel NSVBC857BLT3G* BC857CLT1G 3G SOT−23 3,000 / Tape & Reel (Pb−Free) SBC857CLT1G* BC857CLT3G 10,000 / Tape & Reel BC858ALT1G 3J SOT−23 3,000 / Tape & Reel (Pb−Free) BC858BLT1G 3K SOT−23 (Pb−Free) NSVBC858BLT1G* BC858BLT3G 3L SOT−23 10,000 / Tape & Reel (Pb−Free) BC858CLT1G SOT−23 3,000 / Tape & Reel (Pb−Free) BC858CLT3G SOT−23 10,000 / Tape & Reel (Pb−Free) BC859BLT1G 4B SOT−23 3,000 / Tape & Reel (Pb−Free) BC859BLT3G SOT−23 10,000 / Tape & Reel (Pb−Free) BC859CLT1G 4C SOT−23 3,000 / Tape & Reel (Pb−Free) BC859CLT3G SOT−23 10,000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. www.onsemi.com 6

BC856ALT1G Series PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. 0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF 3 THE BASE MATERIAL. E HE T 4. DPRIMOETNRSUIOSINOSN DS, AONRD G EA DTEO BNUORTR INS.CLUDE MOLD FLASH, 1 2 MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX L A 0.89 1.00 1.11 0.035 0.039 0.044 3Xb L1 A1 0.01 0.06 0.10 0.000 0.002 0.004 b 0.37 0.44 0.50 0.015 0.017 0.020 e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008 TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120 E 1.20 1.30 1.40 0.047 0.051 0.055 e 1.78 1.90 2.04 0.070 0.075 0.080 L 0.30 0.43 0.55 0.012 0.017 0.022 A L1 0.35 0.54 0.69 0.014 0.021 0.027 HE 2.10 2.40 2.64 0.083 0.094 0.104 T 0° −−− 10° 0° −−− 10° A1 SIDE VIEW SEE VIEW C c STYLE 6: PIN 1. BASE END VIEW 2. EMITTER 3. COLLECTOR RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 0.90 3X0.80 0.95 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative ◊ www.onsemi.com BC856ALT1/D 7

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: BC856ALT1G BC856BLT1G BC856BLT3G BC857ALT1G BC857BLT1G BC857BLT3G BC857CLT1G BC858ALT1G BC858BLT1G BC858BLT3G BC858CLT1G BC858CLT3G SBC856BLT1G SBC856BLT3G SBC857ALT1G BC857CLT3G NSVBC858CLT1G NSVBC857BLT3G