2SA1576UB General purpose small signal amplifier (50V, 0.15A) 2SA1576UB Applications Dimensions (Unit : mm) General purpose small signal amplifier. UMT3F 2.0 0.32 0.9 Features 25 3 4 (3) 5 1) Excellent hFE linearity. 0. 0. 2 ) Complements the 2SC4081UB. 2.11.25 0.425 0(.16)5 0.65 (2) 0.13 0.53 Structure 1.3 PNP silicon epitaxial planar transistor. Each lead has same dimensions (1) Base (2) Emitter ∗ (3) Collector Abbreviated symbol : F ∗ = Denotes hFE Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO −60 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −6 V IC −150 mA Collector current ICP ∗1 −200 mA Power dissipation PD ∗2 200 mW Junction temperature Tj 150 ˚C Range of storage temperature Tstg −55 to +150 ˚C ∗1 Pw=1ms Single pulse ∗2 Each terminal mounted on a recommended land Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-emitter breakdown voltage BVCEO −50 − − V IC= −1mA Collector-base breakdown voltage BVCBO −60 − − V IC= −50μA Emitter-base breakdown voltage BVEBO −6 − − V IE= −50μA Collector cutoff current ICBO − − −100 nA VCB= −60V Emitter cutoff current IEBO − − −100 nA VEB= −6V Collector-emitter saturation voltage VCE(sat) − − −0.5 V IC/IB= −50mA/−5mA DC current gain hFE 120 − 390 − VCE= −6V, IC= −1mA Transition frequency fT − 140 − MHz VCE= −12V, IE=2mA, f=100MHz Output capacitance Cob − 4.0 5.0 pF VCB= −12V, IE=0A, f=1MHz www.rohm.com 1/2 2010.09 - Rev.D ○c 2009 ROHM Co., Ltd. All rights reserved.

2SA1576UB Data Sheet hFE rank categories Rank Q R hFE 120 to 270 180 to 390 Electrical characteristic curves mA)ENT : Ic ( −−−521−0005 Ta=1−240500˚˚˚CCC VCE= −6V mA)ENT : I (C−1−−860 Ta=25˚C −−−−−2232348115.....50500 mARENT : I ()C−1−−860000 T−−−−−a54433=050502000005˚C −250 URR −2 URR −17.5 CUR −200 COLLECTOR C −−00−..152 COLLECTOR C −−42 −−−−113704..5..050μA COLLECTOR −−4200 −−−511050μ00A −0.1 IB=0 IB=0 −0.2 −0.4 −0.6−0.8 −1.0−1.2−1.4 −1.6 0 −0.4 −0.8 −1.2 −1.6 −2.0 0 −1 −2 −3 −4 −5 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO MITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation Fig.2 Grounded emitter output Fig.3 Grounded emitter output characteristics characteristics (I) characteristics (II) DC CURRENT GAIN : hFE52100050000 Ta=25˚C VCE= −−−315VVV DC CURRENT GAIN : hFE52100050000 Ta=1−204500˚˚˚CCC V)TOR SATURATION VOLTAGE : V(CE(sat) −0−−−000.0−...11525 IC/IB=521000 Ta=25˚C C −0.2 −0.5 −1 −2 −5 −10 −20 −50−100 −0.2 −0.5 −1 −2 −5 −10 −20VCE=− 5−06−V100 COLLE −0.2 −0.5 −1 −2 −5 −10 −20 −50−100 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. Fig.5 DC current gain vs. Fig.6 Collector-emitter saturation collector current (I) collector current (II) voltage vs. collector current (I) −1 1000 20 V)URATION VOLTAGE : V (CE(sat) −−−000...152 Ta=1−240500˚˚˚CCC lC/lB=10 MHz)N FREQUENCY : f (T125000000 TVaCE==2 5−˚1C2V pF)UT CAPACITANCE : Cob (pF)PACITANCE : Cib ( 150 CibCob TfII=ECa==1=00M2AA5H˚zC COLLECTOR SAT−0.0−50.2 −C0.O5LL−E1CT−O2R CU−5RR−E1N0T −: 2IC0 (mA−5)0−100 TRANSITIO 500.5 1EMIT2TER C5URRE10NT : 2IE0 (mA)50 100 COLLECTOR OUTPEMITTER INPUT CA 2CO−L0L.E5CTO−1R TO− B2ASE V−O5LTA−G1E0 : V−CB2 0(V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Collector-emitter saturation Fig.8 Gain bandwidth product vs. Fig.9 Collector output capacitance vs. voltage vs. collector current (II) emitter current collector-base voltage Emitter inputcapacitance vs. emitter-base voltage www.rohm.com 2/2 2010.09 - Rev.D ○c 2009 ROHM Co., Ltd. All rights reserved.

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