2N5883 2N5884 PNP 2N5885 2N5886 NPN www.centralsemi.com COMPLEMENTARY SILICON DESCRIPTION: POWER TRANSISTORS The CENTRAL SEMICONDUCTOR 2N5883, 2N5885 series types are complementary silicon epitaxial base transistors designed for power amplifier and switching applications. MARKING: FULL PART NUMBER TO-3 CASE 2N5883 2N5884 MAXIMUM RATINGS: (TC=25°C) SYMBOL 2N5885 2N5886 UNITS Collector-Base Voltage VCBO 60 80 V Collector-Emitter Voltage VCEO 60 80 V Emitter-Base Voltage VEBO 5.0 V Continuous Collector Current IC 25 A Peak Collector Current ICM 50 A CContinuous Base Current IB 7.5 A Power Dissipation PD 200 W Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C Thermal Resistance JC 0.875 °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICBO VCB=Rated VCBO 1.0 mA ICEO VCE=½Rated VCEO 2.0 mA ICEX VCE=Rated VCEO, VBE=1.5V 1.0 mA ICEX VCE=Rated VCEO, VBE=1.5V, TC=150°C 10 mA IEBO VEB=5.0V 1.0 mA BVCEO IC=200mA (2N5883, 2N5885) 60 V BVCEO IC=200mA (2N5884, 2N5886) 80 V VCE(SAT) IC=15A, IB=1.5A 1.0 V VCE(SAT) IC=25A, IB=6.25A 4.0 V VBE(SAT) IC=25A, IB=6.25A 2.5 V VBE(ON) VCE=4.0V, IC=10A 1.5 V hFE VCE=4.0V, IC=3.0A 35 hFE VCE=4.0V, IC=10A 20 100 hFE VCE=4.0V, IC=25A 4.0 fT VCE=10V, IC=1.0A, f=1.0MHz 4.0 MHz Cob VCB=10V, IE=0, f=1.0MHz (2N5883, 2N5885) 1000 pF Cob VCB=10V, IE=0, f=1.0MHz (2N5884, 2N5886) 500 pF hfe VCE=4.0V, IC=3.0A, f=1.0kHz 20 tr VCC=30V, IC=10A, IB1=IB2=1.0A 0.7 μs ts VCC=30V, IC=10A, IB1=IB2=1.0A 1.0 μs tf VCC=30V, IC=10A, IB1=IB2=1.0A 0.8 μs R1 (4-December 2012)

2N5883 2N5884 PNP 2N5885 2N5886 NPN COMPLEMENTARY SILICON POWER TRANSISTORS TO-3 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter Case) Collector MARKING: FULL PART NUMBER R1 (4-December 2012) www.centralsemi.com

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