ICGOO在线商城 > 分立半导体产品 > 晶体管 - 双极 (BJT) - 单 > 2N3906
Datasheet下载- 型号： 2N3906
- 制造商： Central Semiconductor
- 库位|库存： xxxx|xxxx
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2N3906产品简介：
ICGOO电子元器件商城为您提供2N3906由Central Semiconductor设计生产，在icgoo商城现货销售，并且可以通过原厂、代理商等渠道进行代购。 2N3906价格参考￥0.18-￥0.19。Central Semiconductor2N3906封装/规格：晶体管 - 双极 (BJT) - 单， 双极 (BJT) 晶体管 PNP 40V 200mA 250MHz 625mW 通孔 TO-92。您可以下载2N3906参考资料、Datasheet数据手册功能说明书，资料中有2N3906 详细功能的应用电路图电压和使用方法及教程。
| 参数 | 数值 |
| 品牌 | Central Semiconductor |
| 产品目录 | 半导体 |
| 描述 | 两极晶体管 - BJT PNP Gen Pur SS |
| 产品分类 | 分离式半导体 |
| 产品手册 | |
| 产品图片 |
|
| rohs | 符合RoHS |
| 产品系列 | 晶体管,两极晶体管 - BJT,Central Semiconductor 2N3906 |
| 产品型号 | 2N3906 |
| 产品种类 | 两极晶体管 - BJT |
| 发射极-基极电压VEBO | 5 V |
| 商标 | Central Semiconductor |
| 增益带宽产品fT | 250 MHz |
| 安装风格 | Through Hole |
| 封装 | Bulk |
| 封装/箱体 | TO-92 |
| 工厂包装数量 | 2500 |
| 晶体管极性 | PNP |
| 最大功率耗散 | 625 mW |
| 直流集电极/BaseGainhfeMin | 100 |
| 系列 | 2N3906 |
| 配置 | Single |
| 集电极—发射极最大电压VCEO | 40 V |
| 集电极—基极电压VCBO | 40 V |
| 集电极—射极饱和电压 | 0.4 V |
| 集电极连续电流 | 0.2 A |
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PDF Datasheet 数据手册内容提取
2N3905 2N3906 www.centralsemi.com DESCRIPTION: PNP SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR 2N3905 and 2N3906 types are PNP silicon transistors designed for general purpose amplifier and switching applications. NPN complementary types are 2N3903 and 2N3904. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 5.0 V Continuous Collector Current IC 200 mA Power Dissipation PD 625 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance ΘJA 200 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C) 2N3905 2N3906 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS ICEV VCE=30V, VEB=3.0V - 50 - 50 nA BVCBO IC=10μA 40 - 40 - V BVCEO IC=1.0mA 40 - 40 - V BVEBO IE=10μA 5.0 - 5.0 - V VCE(SAT) IC=10mA, IB=1.0mA - 0.25 - 0.25 V VCE(SAT) IC=50mA, IB=5.0mA - 0.4 - 0.4 V VBE(SAT) IC=10mA, IB=1.0mA 0.65 0.85 0.65 0.85 V VBE(SAT) IC=50mA, IB=5.0mA - 0.95 - 0.95 V hFE VCE=1.0V, IC=0.1mA 30 - 60 - hFE VCE=1.0V, IC=1.0mA 40 - 80 - hFE VCE=1.0V, IC=10mA 50 150 100 300 hFE VCE=1.0V, IC=50mA 30 - 60 - hFE VCE=1.0V, IC=100mA 15 - 30 - hfe VCE=10V, IC=1.0mA, f=1.0kHz 50 200 100 400 fT VCE=20V, IC=10mA, f=100MHz 200 - 250 - MHz Cob VCB=5.0V, IE=0, f=100kHz - 4.5 - 4.5 pF Cib VEB=0.5V, IC=0, f=100kHz - 10 - 10 pF NF VCE=5.0V, IC=100μA, RS=1.0kΩ f=10Hz to 15.7kHz - 5.0 - 4.0 dB ton VCC=3.0V, VBE(OFF)=0.5V, IC=10mA IB1=1.0mA - 70 - 70 ns toff VCC=3.0V, IC=10mA, IB1=IB2=1.0mA - 260 - 300 ns R2 (17-October 2011)
2N3905 2N3906 PNP SILICON TRANSISTOR TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R2 (17-October 2011) www.centralsemi.com
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