2N2221A 2N2222A www.centralsemi.com SILICON DESCRIPTION: NPN TRANSISTORS The CENTRAL SEMICONDUCTOR 2N2221A and 2N2222A are silicon NPN epitaxial planar transistors designed for small signal, general purpose switching applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Base Voltage VCBO 75 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V Continuous Collector Current IC 800 mA Power Dissipation PD 500 mW Power Dissipation (TC=25°C) PD 1.8 W Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C Thermal Resistance ΘJA 350 °C/W Thermal Resistance ΘJC 97 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICBO VCB=60V 10 nA ICBO VCB=60V, TA=150°C 10 μA ICEV VCE=60V, VEB=3.0V 10 nA IEBO VEB=3.0V 10 nA BVCBO IC=10μA 75 V BVCEO IC=10mA 40 V BVEBO IE=10μA 6.0 V VCE(SAT) IC=150mA, IB=15mA 0.3 V VCE(SAT) IC=500mA, IB=50mA 1.0 V VBE(SAT) IC=150mA, IB=15mA 0.6 1.2 V VBE(SAT) IC=500mA, IB=50mA 2.0 V 2N2221A 2N2222A MIN MAX MIN MAX hFE VCE=10V, IC=0.1mA 20 - 35 - hFE VCE=10V, IC=1.0mA 25 - 50 - hFE VCE=10V, IC=10mA 35 - 75 - hFE VCE=10V, IC=10mA, TA=-55°C 15 - 35 - hFE VCE=10V, IC=150mA 40 120 100 300 hFE VCE=1.0V, IC=150mA 20 - 50 - hFE VCE=10V, IC=500mA 25 - 40 - R5 (5-December 2013)

2N2221A 2N2222A SILICON NPN TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C) 2N2221A 2N2222A SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS fT VCE=20V, IC=20mA, f=100MHz 250 - 300 - MHz Cob VCB=10V, IE=0, f=100kHz - 8.0 - 8.0 pF Cib VEB=0.5V, IC=0, f=100kHz - 25 - 25 pF hie VCE=10V, IC=1.0mA, f=1.0kHz 1.0 3.5 2.0 8.0 kΩ hie VCE=10V, IC=10mA, f=1.0kHz 0.2 1.0 0.25 1.25 kΩ hre VCE=10V, IC=1.0mA, f=1.0kHz - 5.0 - 8.0 x10-4 hre VCE=10V, IC=10mA, f=1.0kHz - 2.5 - 4.0 x10-4 hfe VCE=10V, IC=1.0mA, f=1.0kHz 30 150 50 300 hfe VCE=10V, IC=10mA, f=1.0kHz 50 300 75 375 hoe VCE=10V, IC=1.0mA, f=1.0kHz 3.0 15 5.0 35 μS hoe VCE=10V, IC=10mA, f=1.0kHz 10 100 25 200 μS rb’Cc VCB=10V, IE=20mA, f=31.8MHz - 150 - 150 ps NF VCE=10V, IC=100μA, RS=1.0kΩ, f=1.0kHz - - - 4.0 dB td VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA - 10 - 10 ns tr VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA - 25 - 25 ns ts VCC=30V, IC=150mA, IB1=IB2=15mA - 225 - 225 ns tf VCC=30V, IC=150mA, IB1=IB2=15mA - 60 - 60 ns TO-18 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R5 (5-December 2013) www.centralsemi.com

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