图片仅供参考

详细数据请看参考数据手册

Datasheet下载
  • 型号: PBSS5540X,135
  • 制造商: NXP Semiconductors
  • 库位|库存: xxxx|xxxx
  • 要求:
数量阶梯 香港交货 国内含税
+xxxx $xxxx ¥xxxx

查看当月历史价格

查看今年历史价格

PBSS5540X,135产品简介:

ICGOO电子元器件商城为您提供PBSS5540X,135由NXP Semiconductors设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 PBSS5540X,135价格参考¥1.56-¥4.69。NXP SemiconductorsPBSS5540X,135封装/规格:晶体管 - 双极 (BJT) - 单, 双极 (BJT) 晶体管 PNP 40V 4A 60MHz 1.6W 表面贴装 SOT-89。您可以下载PBSS5540X,135参考资料、Datasheet数据手册功能说明书,资料中有PBSS5540X,135 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

TRANS PNP 40V 4A SOT89

产品分类

晶体管(BJT) - 单路

品牌

NXP Semiconductors

数据手册

点击此处下载产品Datasheet

产品图片

产品型号

PBSS5540X,135

PCN封装

点击此处下载产品Datasheet

PCN组件/产地

点击此处下载产品Datasheet

PCN设计/规格

点击此处下载产品Datasheet

rohs

无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

-

不同 Ib、Ic时的 Vce饱和值(最大值)

375mV @ 500mA,5A

不同 Ic、Vce 时的DC电流增益(hFE)(最小值)

150 @ 2A,2V

供应商器件封装

SOT-89-3

其它名称

568-6790-6

功率-最大值

1.6W

包装

Digi-Reel®

安装类型

表面贴装

封装/外壳

TO-243AA

晶体管类型

PNP

标准包装

1

特色产品

http://www.digikey.com/cn/zh/ph/NXP/I2C.html

电压-集射极击穿(最大值)

40V

电流-集电极(Ic)(最大值)

4A

电流-集电极截止(最大值)

-

频率-跃迁

60MHz

推荐商品

型号:2SC1740STPR

品牌:Rohm Semiconductor

产品名称:分立半导体产品

获取报价

型号:2SB10630P

品牌:Panasonic Electronic Components

产品名称:分立半导体产品

获取报价

型号:2STC4468

品牌:STMicroelectronics

产品名称:分立半导体产品

获取报价

型号:NJL21194DG

品牌:ON Semiconductor

产品名称:分立半导体产品

获取报价

型号:KSP14TA

品牌:ON Semiconductor

产品名称:分立半导体产品

获取报价

型号:2N6427RLRA

品牌:ON Semiconductor

产品名称:分立半导体产品

获取报价

型号:ZXTP19020DFFTA

品牌:Diodes Incorporated

产品名称:分立半导体产品

获取报价

型号:ZXT13N15DE6TA

品牌:Diodes Incorporated

产品名称:分立半导体产品

获取报价

样品试用

万种样品免费试用

去申请
PBSS5540X,135 相关产品

BST61,115

品牌:Nexperia USA Inc.

价格:¥2.03-¥2.03

2SC3311ASA

品牌:Panasonic Electronic Components

价格:

MPS4124RLRAG

品牌:ON Semiconductor

价格:¥0.38-¥0.38

DSA500100L

品牌:Panasonic Electronic Components

价格:

SS8550CBU

品牌:ON Semiconductor

价格:¥0.20-¥0.20

JANTX2N3792

品牌:None

价格:

BCX5310E6327HTSA1

品牌:Infineon Technologies

价格:

KSB1121STM

品牌:ON Semiconductor

价格:

PDF Datasheet 数据手册内容提取

PBSS5540X 40 V, 5 A PNP low VCEsat (BISS) transistor 20 March 2018 Product data sheet 1. General description PNP low V transistor in a medium power SOT89 (SC-62) package. CEsat NPN complement: PBSS4540X. 2. Features and benefits • Low collector-emitter saturation voltage V CEsat • High collector current capability: I and I C CM • High efficiency leading to less heat generation. • AEC-Q101 qualified 3. Applications • Supply line switching circuits • Battery management applications • DC/DC converter applications • Strobe flash units • Medium power driver (e.g. relays, buzzers and motors). 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - -40 V CEO voltage I collector current - - -4 A C I peak collector current single pulse; t ≤ 1 ms - - -10 A CM p h DC current gain V = -2 V; I = -0.5 A; T = 25 °C 250 - - FE CE C amb R collector-emitter I = -5 A; I = -500 mA; t ≤ 300 µs; - 45 75 mΩ CEsat C B p saturation resistance pulsed; δ ≤ 0.02 ; T = 25 °C amb

Nexperia PBSS5540X 40 V, 5 A PNP low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 E emitter C 2 C collector B 3 B base 3 2 1 E sym132 SOT89 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS5540X SOT89 plastic surface-mounted package; die pad for good heat transfer; SOT89 3 leads 7. Marking Table 4. Marking codes Type number Marking code[1] PBSS5540X %1G [1] % = placeholder for manufacturing site code PBSS5540X All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved Product data sheet 20 March 2018 2 / 16

Nexperia PBSS5540X 40 V, 5 A PNP low VCEsat (BISS) transistor 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - -40 V CBO V collector-emitter voltage open base - -40 V CEO V emitter-base voltage open collector - -6 V EBO I collector current - -4 A C I repetitive peak collector δ ≤ 0.2 ; t ≤ 10 ms - -5 A CRM p current I peak collector current single pulse; t ≤ 1 ms - -10 A CM p I base current - -1 A B I peak base current single pulse; t ≤ 1 ms - -2 A BM p P total power dissipation [1] [2] - 2.5 W tot T ≤ 25 °C [2] - 0.55 W amb [3] - 1 W [4] - 1.4 W [5] - 1.6 W T junction temperature - 150 °C j T ambient temperature -65 150 °C amb T storage temperature -65 150 °C stg [1] Pulsed tp ≤ 10 ms; δ ≤ 0.2 [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. [5] Device mounted on a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper and tin-plated. PBSS5540X All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved Product data sheet 20 March 2018 3 / 16

Nexperia PBSS5540X 40 V, 5 A PNP low VCEsat (BISS) transistor 001aaa229 1600 Ptot (1) (mW) 1200 (2) 800 (3) 400 0 -50 0 50 100 150 200 Tamb (°C) 2 (1) FR4 PCB; 6 cm mounting pad for collector 2 (2) FR4 PCB; 1 cm mounting pad for collector (3) FR4; standard footprint Fig. 1. Power derating curves PBSS5540X All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved Product data sheet 20 March 2018 4 / 16

Nexperia PBSS5540X 40 V, 5 A PNP low VCEsat (BISS) transistor 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance in free air [1] [2] - - 50 K/W th(j-a) from junction to [1] - - 225 K/W ambient [3] - - 125 K/W [4] - - 90 K/W [5] - - 80 K/W R thermal resistance - - 16 K/W th(j-sp) from junction to solder point [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Pulse test: tp ≤ 10 ms; δ ≤ 0.2. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. [5] Device mounted on a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper and tin-plated. 103 006aaa232 Zth (K/W) (1) (2) 102 (3) (4) (5) (6) 10 (7) (8) (9) (10) 1 10-1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tp (s) Mounted on FR4 PCB; standard footprint (1) δ = 1 (2) δ = 0.75 (3) δ = 0.5 (4) δ = 0.33 (5) δ = 0.2 (6) δ = 0.1 (7) δ = 0.05 (8) δ = 0.02 (9) δ = 0.01 (10) δ = 0 Fig. 2. Transient thermal impedance as a function of pulse duration; typical values PBSS5540X All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved Product data sheet 20 March 2018 5 / 16

Nexperia PBSS5540X 40 V, 5 A PNP low VCEsat (BISS) transistor 103 006aaa233 Zth (K/W) (1) 102 (2) (3) (4) (5) (6) 10 (7) (8) (9) 1 (10) 10-1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tp (s) 2 Mounted on FR4 PCB; mounting pad for collector 1 cm (1) δ = 1 (2) δ = 0.75 (3) δ = 0.5 (4) δ = 0.33 (5) δ = 0.2 (6) δ = 0.1 (7) δ = 0.05 (8) δ = 0.02 (9) δ = 0.01 (10) δ = 0 Fig. 3. Transient thermal impedance as a function of pulse duration; typical values PBSS5540X All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved Product data sheet 20 March 2018 6 / 16

Nexperia PBSS5540X 40 V, 5 A PNP low VCEsat (BISS) transistor 103 006aaa234 Zth (K/W) 102 (1) (2) (3) (4) (5) 10 (6) (7) (8) (9) 1 (10) 10-1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tp (s) 2 Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm (1) δ = 1 (2) δ = 0.75 (3) δ = 0.5 (4) δ = 0.33 (5) δ = 0.2 (6) δ = 0.1 (7) δ = 0.05 (8) δ = 0.02 (9) δ = 0.01 (10) δ = 0 Fig. 4. Transient thermal impedance as a function of pulse duration; typical values PBSS5540X All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved Product data sheet 20 March 2018 7 / 16

Nexperia PBSS5540X 40 V, 5 A PNP low VCEsat (BISS) transistor 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit I collector-base cut-off V = -30 V; I = 0 A; T = 25 °C - - -100 nA CBO CB E amb current V = -30 V; I = 0 A; T = 150 °C - - -50 µA CB E j I emitter-base cut-off V = -5 V; I = 0 A; T = 25 °C - - -100 nA EBO EB C amb current h DC current gain V = -2 V; I = -0.5 A; T = 25 °C 250 - - FE CE C amb V = -2 V; I = -1 A; t ≤ 300 µs; 200 - - CE C p pulsed; δ ≤ 0.02 ; T = 25 °C amb V = -2 V; I = -2 A; t ≤ 300 µs; 150 - - CE C p pulsed; δ ≤ 0.02 ; T = 25 °C amb V = -2 V; I = -5 A; t ≤ 300 µs; 50 - - CE C p pulsed; δ ≤ 0.02 ; T = 25 °C amb V collector-emitter I = -0.5 A; I = -5 mA; T = 25 °C - - -120 mV CEsat C B amb saturation voltage I = -1 A; I = -10 mA; T = 25 °C - - -170 mV C B amb I = -2 A; I = -200 mA; T = 25 °C - - -160 mV C B amb I = -4 A; I = -200 mA; t ≤ 300 µs; - - -340 mV C B p pulsed; δ ≤ 0.02 ; T = 25 °C amb I = -5 A; I = -500 mA; t ≤ 300 µs; - - -375 mV C B p pulsed; δ ≤ 0.02 ; T = 25 °C R collector-emitter amb - 45 75 mΩ CEsat saturation resistance V base-emitter saturation I = -4 A; I = -200 mA; t ≤ 300 µs; - - -1.1 V BEsat C B p voltage pulsed; δ ≤ 0.02 ; T = 25 °C amb I = -5 A; I = -500 mA; t ≤ 300 µs; - - -1.2 V C B p pulsed; δ ≤ 0.02 ; T = 25 °C amb V base-emitter turn-on V = -2 V; I = -2 A; T = 25 °C - - -1 V BEon CE C amb voltage f transition frequency V = -10 V; I = -0.1 A; f = 100 MHz; 60 - - MHz T CE C T = 25 °C amb C collector capacitance V = -10 V; I = 0 A; i = 0 A; - - 105 pF c CB E e f = 1 MHz; T = 25 °C amb PBSS5540X All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved Product data sheet 20 March 2018 8 / 16

Nexperia PBSS5540X 40 V, 5 A PNP low VCEsat (BISS) transistor 001aaa157 001aaa158 -8 -1.2 IC (1) (A) VBE (2) (V) -6 (3) (1) -0.8 (2) (4) -4 (3) (5) -0.4 -2 0 0 0 -0.5 -1 -1.5 -2 -10-1 -1 -10 -102 -103 -104 VCE (V) IC (mA) (1) I = −55 mA V = −2 V B CE (2) I = −44 mA (1) T = −55 °C B amb (3) I = −33 mA (2) T = 25 °C B amb (4) I = −22 mA (3) T = 100 °C B amb (5) I = −11 mA B Fig. 6. Base-emitter voltage as a function of collector Fig. 5. Collector current as a function of collector- current; typical values emitter voltage; typical values 1000 001aaa159 102 001aaa160 hFE RCEsat (Ω) 800 10 600 (1) 1 (2) 400 (2) (1) 10-1 200 (3) (3) 0 10-2 -10-1 -1 -10 -102 -103 -104 -10-1 -1 -10 -102 -103 -104 IC (mA) IC (mA) V = −2 V I /I = 20 CE C B (1) T = 100 °C (1) T = 100 °C amb amb (2) T = 25 °C (2) T = 25 °C amb amb (3) T = −55 °C (3) T = −55 °C amb amb Fig. 7. DC current gain as a function of collector Fig. 8. Equivalent on-resistance as a function of current; typical values collector current; typical values PBSS5540X All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved Product data sheet 20 March 2018 9 / 16

Nexperia PBSS5540X 40 V, 5 A PNP low VCEsat (BISS) transistor 001aaa161 001aaa162 -1 -1 VCEsat VCEsat (V) (V) -10-1 -10-1 (1) (1) (2) -10-2 (2) (3) -10-2 (3) -10-3 -10-3 -10-1 -1 -10 -102 -103 -104 -10-1 -1 -10 -102 -103 -104 IC (mA) IC (mA) I /I = 20 T = 25 °C C B amb (1) T = 100 °C (1) I /I = 100 amb C B (2) T = 25 °C (2) I /I = 50 amb C B (3) T = −55 °C (3) I /I = 10 amb C B Fig. 9. Collector-emitter saturation voltage as a Fig. 10. Collector-emitter saturation voltage as a function of collector current; typical values function of collector current; typical values 001aaa163 001aaa164 -10 -1.2 VBE (V) VBEsat (V) -0.8 -1 (1) (2) -0.4 (3) -10-1 0 10-1 -1 -10 -102 -103 -104 -10-1 -1 -10 -102 -103 -104 IC (mA) IC (mA) I /I = 20 T = 25 °C C B amb (1) T = −55 °C amb Fig. 12. Base-emitter voltage as a function of collector (2) T = 25 °C amb current; typical values (3) T = 100 °C amb Fig. 11. Base-emitter saturation voltage as a function of collector current; typical values PBSS5540X All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved Product data sheet 20 March 2018 10 / 16

Nexperia PBSS5540X 40 V, 5 A PNP low VCEsat (BISS) transistor 11. Package outline Plastic surface-mounted package; exposed die pad for good heat transfer; 3 leads SOT89 D B A bp3 E HE Lp 1 2 3 bp2 c w M B bp1 e1 e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp1 bp2 bp3 c D E e e1 HE Lp w 1.6 0.48 0.53 1.8 0.44 4.6 2.6 4.25 1.2 mm 3.0 1.5 0.13 1.4 0.35 0.40 1.4 0.23 4.4 2.4 3.75 0.8 OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC JEITA PROJECTION 06-03-16 SOT89 TO-243 SC-62 06-08-29 Fig. 13. Package outline SOT89 PBSS5540X All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved Product data sheet 20 March 2018 11 / 16

Nexperia PBSS5540X 40 V, 5 A PNP low VCEsat (BISS) transistor 12. Soldering 4.75 2.25 2 1.9 1.2 0.2 0.85 solder lands 1.7 solder resist 1.2 4.6 4.85 0.5 solder paste occupied area 1 1.1 (3×) (2×) Dimensions in mm 1.5 1.5 0.6 (3×) 0.7 (3×) 3.95 sot089_fr Fig. 14. Reflow soldering footprint for SOT89 6.6 2.4 3.5 solder lands 7.6 0.5 solder resist occupied area 1.8 (2×) Dimensions in mm preferred transport direction during soldering 1.9 1.9 1.5 0.7 (2×) 5.3 sot089_fw Fig. 15. Wave soldering footprint for SOT89 PBSS5540X All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved Product data sheet 20 March 2018 12 / 16

Nexperia PBSS5540X 40 V, 5 A PNP low VCEsat (BISS) transistor 13. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PBSS5540X v.3 20180320 Product data sheet - PBSS5540X v.2 Modifications: • The format of this data sheet has been redesigned to comply with the identity guidelines of Nexperia. • Legal texts have been adapted to the new company name where appropriate. • Figure 5: Legend adapted PBSS5540X v.2 20041104 Product data sheet - PBSS5540X v.1 PBSS5540X v.1 20040115 Product data sheet - - PBSS5540X All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved Product data sheet 20 March 2018 13 / 16

Nexperia PBSS5540X 40 V, 5 A PNP low VCEsat (BISS) transistor for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Nexperia. 14. Legal information Right to make changes — Nexperia reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This Data sheet status document supersedes and replaces all information supplied prior to the publication hereof. Document Product Definition Suitability for use — Nexperia products are not designed, authorized or status [1][2] status [3] warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction Objective Development This document contains data from of an Nexperia product can reasonably be expected to result in personal [short] data the objective specification for product injury, death or severe property or environmental damage. Nexperia and its sheet development. suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at Preliminary Qualification This document contains data from the the customer’s own risk. [short] data preliminary specification. sheet Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this Product Production This document contains the product document, and as such is not complete, exhaustive or legally binding. [short] data specification. sheet Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use [1] Please consult the most recently issued document before initiating or without further testing or modification. completing a design. [2] The term 'short data sheet' is explained in section "Definitions". Customers are responsible for the design and operation of their applications [3] The product status of device(s) described in this document may have and products using Nexperia products, and Nexperia accepts no liability for changed since this document was published and may differ in case of any assistance with applications or customer product design. It is customer’s multiple devices. The latest product status information is available on sole responsibility to determine whether the Nexperia product is suitable the Internet at URL http://www.nexperia.com. and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to Definitions minimize the risks associated with their applications and products. Preview — The document is a preview version only. The document is still Nexperia does not accept any liability related to any default, damage, costs subject to formal approval, which may result in modifications or additions. or problem which is based on any weakness or default in the customer’s Nexperia does not give any representations or warranties as to the accuracy applications or products, or the application or use by customer’s third party or completeness of information included herein and shall have no liability for customer(s). Customer is responsible for doing all necessary testing for the the consequences of use of such information. customer’s applications and products using Nexperia products in order to avoid a default of the applications and the products or of the application or Draft — The document is a draft version only. The content is still under use by customer’s third party customer(s). Nexperia does not accept any internal review and subject to formal approval, which may result in liability in this respect. modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein Limiting values — Stress above one or more limiting values (as defined in and shall have no liability for the consequences of use of such information. the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) Short data sheet — A short data sheet is an extract from a full data sheet operation of the device at these or any other conditions above those with the same product type number(s) and title. A short data sheet is given in the Recommended operating conditions section (if present) or the intended for quick reference only and should not be relied upon to contain Characteristics sections of this document is not warranted. Constant or detailed and full information. For detailed and full information see the relevant repeated exposure to limiting values will permanently and irreversibly affect full data sheet, which is available on request via the local Nexperia sales the quality and reliability of the device. office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Terms and conditions of commercial sale — Nexperia products are sold subject to the general terms and conditions of commercial sale, as Product specification — The information and data provided in a Product published at http://www.nexperia.com/profile/terms, unless otherwise agreed data sheet shall define the specification of the product as agreed between in a valid written individual agreement. In case an individual agreement is Nexperia and its customer, unless Nexperia and customer have explicitly concluded only the terms and conditions of the respective agreement shall agreed otherwise in writing. In no event however, shall an agreement be apply. Nexperia hereby expressly objects to applying the customer’s general valid in which the Nexperia product is deemed to offer functions and qualities terms and conditions with regard to the purchase of Nexperia products by beyond those described in the Product data sheet. customer. No offer to sell or license — Nothing in this document may be interpreted Disclaimers or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents Limited warranty and liability — Information in this document is believed or other industrial or intellectual property rights. to be accurate and reliable. However, Nexperia does not give any representations or warranties, expressed or implied, as to the accuracy Export control — This document as well as the item(s) described herein or completeness of such information and shall have no liability for the may be subject to export control regulations. Export might require a prior consequences of use of such information. Nexperia takes no responsibility authorization from competent authorities. for the content in this document if provided by an information source outside Non-automotive qualified products — Unless this data sheet expressly of Nexperia. states that this specific Nexperia product is automotive qualified, the In no event shall Nexperia be liable for any indirect, incidental, punitive, product is not suitable for automotive use. It is neither qualified nor tested in special or consequential damages (including - without limitation - lost accordance with automotive testing or application requirements. Nexperia profits, lost savings, business interruption, costs related to the removal accepts no liability for inclusion and/or use of non-automotive qualified or replacement of any products or rework charges) whether or not such products in automotive equipment or applications. damages are based on tort (including negligence), warranty, breach of In the event that customer uses the product for design-in and use in contract or any other legal theory. automotive applications to automotive specifications and standards, Notwithstanding any damages that customer might incur for any reason customer (a) shall use the product without Nexperia’ warranty of the product whatsoever, Nexperia’ aggregate and cumulative liability towards customer for such automotive applications, use and specifications, and (b) whenever PBSS5540X All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved Product data sheet 20 March 2018 14 / 16

Nexperia PBSS5540X 40 V, 5 A PNP low VCEsat (BISS) transistor customer uses the product for automotive applications beyond Nexperia’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Nexperia for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Nexperia’ standard warranty and Nexperia’ product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. PBSS5540X All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved Product data sheet 20 March 2018 15 / 16

Nexperia PBSS5540X 40 V, 5 A PNP low VCEsat (BISS) transistor 15. Contents 1. General description......................................................1 2. Features and benefits..................................................1 3. Applications..................................................................1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Marking..........................................................................2 8. Limiting values.............................................................3 9. Thermal characteristics...............................................5 10. Characteristics............................................................8 11. Package outline........................................................11 12. Soldering...................................................................12 13. Revision history........................................................13 14. Legal information.....................................................14 © Nexperia B.V. 2018. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 20 March 2018 PBSS5540X All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved Product data sheet 20 March 2018 16 / 16