SiR838DP Vishay Siliconix N-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFET VDS (V) RDS(on) () ID (A) Qg (Typ.) (cid:129) 100 % Rg and UIS Tested 150 0.033 at VGS = 10 V 35 33 nC (cid:129) Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PowerPAK® SO-8 APPLICATIONS (cid:129) Primary Side Switch D 6.15 mm S 5.15 mm 1 S (cid:129) Isolated DC/DC Converters 2 S 3 G 4 D G 8 D 7 D 6 D 5 S Bottom View N-Channel MOSFET Ordering Information: SiR838DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS ± 20 TC = 25 °C 35 Continuous Drain Current (TJ = 150 °C) TTCA == 2750 °°CC ID 8.238b, c TA = 70 °C 6.6b, c A Pulsed Drain Current IDM 60 Continuous Source-Drain Diode Current TTCA == 2255 °°CC IS 46.50ba, c Single Pulse Avalanche Current IAS 30 L = 0.1 mH Single Pulse Avalanche Energy EAS 45 mJ TC = 25 °C 96 T = 70 °C 62 Maximum Power Dissipation TCA = 25 °C PD 5.4b, c W TA = 70 °C 3.5b, c Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 °C Soldering Recommendations (Peak Temperature)d, e 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f t  10 s RthJA 18 23 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 1 1.3 Notes: a.Package limited b.Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d.See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e.Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 65 °C/W. Document Number: 65650 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com S13-2092-Rev. B, 30-Sep-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SiR838DP Vishay Siliconix SPECIFICATIONS (T = 25 °C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 150 V VDS Temperature Coefficient VDS/TJ ID = 250 µA 175 mV/°C VGS(th) Temperature Coefficient VGS(th)/TJ -9 Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA 2 4 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = 150 V, VGS = 0 V 1 Zero Gate Voltage Drain Current IDSS µA VDS = 150 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS 5 V, VGS = 10 V 30 A Drain-Source On-State Resistancea RDS(on) VGS 10 V, ID = 8.3 A 0.0275 0.0330  Forward Transconductancea gfs VDS = 15 V, ID = 8.3 A 28 S Dynamicb Input Capacitance Ciss 2075 Output Capacitance Coss VDS = 75 V, VGS = 0 V, f = 1 MHz 155 pF Reverse Transfer Capacitance Crss 45 Total Gate Charge Qg 33 50 Gate-Source Charge Qgs VDS = 75 V, VGS = 10 V, ID = 8.3 A 14 nC Gate-Drain Charge Qgd 4 Gate Resistance Rg f = 1 MHz 0.3 1.4 2.8  Turn-On Delay Time td(on) 16 25 Rise Time tr VDD = 75 V, RL = 11.5  11 17 ns Turn-Off Delay Time td(off) ID  6.6 A, VGEN = 10 V, Rg = 1  23 35 Fall Time tf 10 15 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 60 A Pulse Diode Forward Current ISM 60 Body Diode Voltage VSD IS = 6.6 A, VGS 0 V 0.8 1.2 V Body Diode Reverse Recovery Time trr 77 116 ns Body Diode Reverse Recovery Charge Qrr 260 390 nC I = 6.6 A, dI/dt = 100 A/µs, T = 25 °C F J Reverse Recovery Fall Time ta 60 ns Reverse Recovery Rise Time tb 17 Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For technical questions, contact: pmostechsupport@vishay.com Document Number: 65650 2 S13-2092-Rev. B, 30-Sep-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SiR838DP Vishay Siliconix TYPICAL CHARACTERISTICS (25°C, unless otherwise noted) 60 1.5 VGS=10Vthru7V VGS=6V 1.2 45 A) A) ( ( ent ent 0.9 urr urr C 30 C n n ai ai Dr Dr 0.6 - D - D TC=25 °C I I 15 VGS=5V 0.3 TC=125 °C TC=- 55 °C 0 0.0 0 1 2 3 4 5 0.0 1.5 3.0 4.5 6.0 VDS-Drain-to-SourceVoltage(V) VGS-Gate-to-SourceVoltage(V) Output Characteristics Transfer Characteristics 0.040 2500 Ciss Ω() 0.035 2000 sistance VGS=10V nce(pF) 1500 e a n-R 0.030 acit O p - Ca 1000 S(on) C - D 0.025 R 500 Coss Crss 0.020 0 0 15 30 45 60 0 30 60 90 120 150 ID-DrainCurrent(A) VDS-Drain-to-SourceVoltage(V) On-Resistance vs. Drain Current Capacitance 10 2.5 ID=8.3A ID=8.3A (V) 8 VDS=75V 2.1 e Gate-to-SourceVoltag 46 VDS=38V VDS=120V - On-ResistanceS(on)(Normalized) 11..37 VGS=10V - RD S G 2 0.9 V 0 0.5 0 7 14 21 28 35 - 50 - 25 0 25 50 75 100 125 150 Qg-TotalGateCharge(nC) TJ-JunctionTemperature(°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 65650 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com S13-2092-Rev. B, 30-Sep-13 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SiR838DP Vishay Siliconix TYPICAL CHARACTERISTICS (25°C, unless otherwise noted) 100 0.10 Ω) 0.08 A) TJ=150 °C e( nt( 10 anc TJ=125 °C Curre Resist 0.06 - SourceS 1 TJ=25 °C - On-S(on) 0.04 TJ=25 °C I D R 0.02 0.1 0.00 0.0 0.3 0.6 0.9 1.2 4.0 5.5 7.0 8.5 10.0 VSD-Source-to-DrainVoltage(V) VGS-Gate-to-SourceVoltage(V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 4.0 150 3.5 120 ID=250 µA V) 3.0 W) 90 ( GS(th) wer( V 2.5 Po 60 2.0 30 1.5 0 - 50 - 25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 1000 TJ-Temperature(°C) Time(s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 LimitedbyRDS(on)* 100µs 10 A) ( nt 1ms e urr C 1 10ms n ai Dr 100ms - D I 0.1 1s TA=25 °C 10s SinglePulse 0.01 BVDSSLimited DC 0.1 1 10 100 1000 VDS-Drain-to-SourceVoltage(V) *VGS>minimumVGSatwhichRDS(on)isspecified Safe Operating Area, Junction-to-Ambient www.vishay.com For technical questions, contact: pmostechsupport@vishay.com Document Number: 65650 4 S13-2092-Rev. B, 30-Sep-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SiR838DP Vishay Siliconix TYPICAL CHARACTERISTICS (25°C, unless otherwise noted) 40 30 A) ( nt e urr C 20 n ai Dr - D I 10 0 0 25 50 75 100 125 150 TC-CaseTemperature(°C) Current Derating* 120 2.5 2.0 90 W) W) 1.5 ( ( er 60 er w w o o P P 1.0 30 0.5 0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC-CaseTemperature(°C) TA-AmbientTemperature(°C) Power, Junction-to-Case Power Derating, Junction-to-Ambient * The power dissipation P is based on T = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper D J(max.) dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 65650 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com S13-2092-Rev. B, 30-Sep-13 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SiR838DP Vishay Siliconix TYPICAL CHARACTERISTICS (25°C, unless otherwise noted) 1 DutyCycle=0.5 nt e si ne 0.2 ac Tran ed dEffectivmalImpe 0.1 00..015 NPoDteMs: alizeTher t1 Norm 0.02 1.DutyCyclet,2D= tt12 2.PerUnitBase=RthJA=65 °C/W SinglePulse 3.TJM-TA=PDMZthJA(t) 4.SurfaceMounted 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 SquareWavePulseDuration(s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 DutyCycle=0.5 nt sie 0.2 Tranance 0.1 ed ve ectimp 0.1 EffalI 0.05 alizedTherm 0.02 m or SinglePulse N 0.01 10-4 10-3 10-2 10-1 1 SquareWavePulseDuration(s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65650. www.vishay.com For technical questions, contact: pmostechsupport@vishay.com Document Number: 65650 6 S13-2092-Rev. B, 30-Sep-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROV E RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose o r the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustainin g applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk . Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this documen t or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2019 1 Document Number: 91000