SDP8436 Silicon Phototransistor FEATURES • Side-looking plastic package • 18¡ (nominal) acceptance angle • Enhanced coupling distance • Internal visible light rejection filter • Low profile for design flexibility • Wide sensitivity ranges • Mechanically matched to SEP8736 infrared emitting diode INFRA-82.TIF DESCRIPTION OUTLINE DIMENSIONSin inches (mm) The SDP8436 is an NPN silicon phototransistor molded Tolerance 3 plc decimals ±0.005(0.12) in a black plastic package which combines the mounting 2 plc decimals ±0.020(0.51) advantages of a side-looking package with the narrow acceptance angle and high optical gain of a T 1 package. The SDP8436 is designed for those applications which require longer coupling distances than standard side looking devices can provide, such as touch screens. The device is also well suited to applications in which adjacent channel crosstalk could be a problem. The package is highly transmissive to the IR source energy while it provides effective shielding against visible ambient light. DIM_019.ds4 h Honeywell reserves the right to make 128 changes in order to improve design and supply the best products possible.

SDP8436 Silicon Phototransistor ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS ABSOLUTE MAXIMUM RATINGS SCHEMATIC (25¡C Free-Air Temperature unless otherwise noted) Collector-Emitter Voltage 30 V Emitter-Collector Voltage 5 V Power Dissipation 100 mW [À] Operating Temperature Range -40¡C to 85¡C Storage Temperature Range -40¡C to 85¡C Soldering Temperature (5 sec) 240¡C Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.78 mW/¡C. Honeywell reserves the right to make h changes in order to improve design and 129 supply the best products possible.

SDP8436 Silicon Phototransistor SWITCHING TIME TEST CIRCUIT SWITCHING WAVEFORM cir_015.cdr cir_004.cdr Fig. 1 Responsivity vs Fig. 2 Collector Current vs Angular Displacement gra_013.ds4 Ambient Temperature gra_039.ds4 1.0 2.0 0.9 e 0.8 ro 1.6 lit rvsseaeepon 00000.....34567 li lltzccaedoemt rrcuen 01..82 R 0.2 roN 0.4 0.1 0.0 0.0 -40 -30 -20 -10 0 +10 +20 +30 +40 0 10 20 30 40 50 60 70 80 Angular displacement - degrees Ambient temperature - °C Fig. 3 Dark Current vs Fig. 4 Non-Saturated Switching Time vs Temperature gra_301.cdr Load Resistance gra_041.ds4 100 s µ - e m i te 10 s n o p s e R 1 10 100 1000 10000 Load resistance - Ohms h Honeywell reserves the right to make 130 changes in order to improve design and supply the best products possible.

SDP8436 Silicon Phototransistor Fig. 5 Spectral Responsivity Fig. 6 Coupling Characteristics gra_050.ds4 with SEP8736 gra_034.ds4 1.0 10 0.9 lit r vsseaeeponeR 0000000.......2345678 lili t rzoaedghNmt rrcuen001.0..101 0.1 0.0 0.001 600 700 800 900 1000 1100 1200 0.1 1.0 10 Wavelength - nm Lens-to-lens separation - inches All Performance Curves Show Typical Values Honeywell reserves the right to make h changes in order to improve design and 131 supply the best products possible.