SD3443/5443 Silicon Phototransistor FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90¡ or 18¡ (nominal) acceptance angle option • Wide operating temperature range ( 55¡C to +125¡C) • External base connection for added control • High sensitivity • Mechanically and spectrally matched to SE3450/5450, SE3455/5455 and SE3470/5470 infrared emitting diodes INFRA-57.TIF DESCRIPTION OUTLINE DIMENSIONSin inches (mm) The SD3443/5443 series consists of an NPN silicon Tolerance 3 plc decimals ±0.005(0.12) phototransistor mounted in a TO-46 metal can package. 2 plc decimals ±0.020(0.51) The SD3443 has flat window cans providing a wide acceptance angle, while the SD5443 has glass lensed cans providing a narrow acceptance angle. The TO-46 SD3443 packages are ideally suited for operation in hostile .188(4.77) DIA. 45° environments. .178(4.52) .046(1.17) ..220189((55..2586))DIA. (1.25.0700) .036(.91) The base is connected on all SD3443 and SD5433 MIN. .100(2.54)DIA 1 NOM standard products. 2 3 .048(1.22) .160(4.06)DIA. .015 .028(.71) .137(3.48) (0.36) .018 DIA. .153(3.89) (.460) .140(3.56) LEADS: 1.EMITTER(TAB) 2.BASE 3.COLLECTOR(CASE) DIM_015.ds4 SD5443 DIM_15b.ds4 h Honeywell reserves the right to make 108 changes in order to improve design and supply the best products possible.

SD3443/5443 Silicon Phototransistor ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS ABSOLUTE MAXIMUM RATINGS SCHEMATIC (25¡C Free-Air Temperature unless otherwise noted) Collector-Emitter Voltage 30 V Emitter-Collector Voltage 5 V Power Dissipation 150 mW [À] Operating Temperature Range -55¡C to 125¡C Storage Temperature Range -65¡C to 150¡C Soldering Temperature (10 sec) 260¡C Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 1.43 mW/¡C. Honeywell reserves the right to make h changes in order to improve design and 109 supply the best products possible.

SD3443/5443 Silicon Phototransistor SWITCHING TIME TEST CIRCUIT SWITCHING WAVEFORM cir_03b.cdr cir_004.cdr Fig. 1 Responsivity vs Fig. 2 Responsivity vs Angular Displacement (SD3443) gra_052.ds4 Angular Displacement (SD5443) gra_053.ds4 1.0 1.0 0.9 0.9 e 0.8 e 0.8 s s on 0.7 on 0.7 sp 0.6 sp 0.6 e e re 0.5 re 0.5 litvea 00..34 litvea 00..34 R 0.2 R 0.2 0.1 0.1 0.0 0.0 -60 -45 -30 -15 0 +15 +30 +45 +60 -40 -30 -20 -10 0 +10 +20 +30 +40 Angular displacement - degrees Angular displacement - degrees Fig. 3 Dark Current vs Fig. 4 Non-Saturated Switching Time vs Temperature gra_303.cdr Load Resistance gra_041.ds4 100 s µ - e m i te 10 s n o p s e R 1 10 100 1000 10000 Load resistance - Ohms h Honeywell reserves the right to make 110 changes in order to improve design and supply the best products possible.

SD3443/5443 Silicon Phototransistor Fig. 5 Spectral Responsivity Fig. 6 Coupling Characteristics gra_036.ds4 SE3450 with SD3443 gra_021.ds4 1.0 1.0 0.9 lit rvsseaeeponeR 0000000.......2345678 lilir t zoaedghNmrrt cuen 0000....2468 0.1 0.0 400 600 800 1000 1200 0.0 0.2 0.4 0.6 0.8 1.0 Wavele ngth - nm Window-to-window distance - inches Fig. 7 Coupling Characteristics Fig. 8 Collector Current vs SE5450 with SD5443 gra_024.ds4 Ambient Temperature gra_302.cdr 1.0 t h 0.8 g lili zaedmt rrcuen 00..46 ro N 0.2 0.0 0 1 2 3 4 5 6 7 8 9 Lens-to-lens distance - inches All Performance Curves Show Typical Values Honeywell reserves the right to make h changes in order to improve design and 111 supply the best products possible.