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  • 型号: OP644SL
  • 制造商: OPTEK
  • 库位|库存: xxxx|xxxx
  • 要求:
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OP644SL产品简介:

ICGOO电子元器件商城为您提供OP644SL由OPTEK设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 OP644SL价格参考¥10.47-¥11.95。OPTEKOP644SL封装/规格:光学传感器 - 光电晶体管, Phototransistor 890nm Top View Pill。您可以下载OP644SL参考资料、Datasheet数据手册功能说明书,资料中有OP644SL 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

传感器,变送器

描述

PHOTOTRANSIST NPN 890NM PILL PAK光电晶体管 NPN PHOTOTRANSISTOR

产品分类

光学传感器 - 光电晶体管

品牌

TT Electronics/Optek Technology

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

光电晶体管,Optek / TT Electronics OP644SL*

数据手册

点击此处下载产品Datasheet

产品型号

OP644SL

PCN组件/产地

点击此处下载产品Datasheet点击此处下载产品Datasheet

上升时间

15 us

下降时间

15 us

产品目录页面

点击此处下载产品Datasheet

产品种类

光电晶体管

其它名称

365-1078

功率-最大值

50mW

商标

Optek / TT Electronics

安装类型

表面贴装

封装

Bulk

封装/外壳

丸状

封装/箱体

Pill

工厂包装数量

25

最大功率耗散

50 mW

最大工作温度

+ 125 C

最大暗电流

100 nA

最大集电极电流

50 mA

最小工作温度

- 65 C

朝向

顶视图

标准包装

25

波长

890nm

电压-集射极击穿(最大值)

25V

电流-暗(Id)(最大值)

100nA

电流-集电极(Ic)(最大值)

50mA

类型

Chip

视角

-

集电极—发射极最大电压VCEO

25 V

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PDF Datasheet 数据手册内容提取

NPN Silicon Phototransistor OP600 Series Features:  Narrow receiving angle  Variety of sensitivity ranges  Enhanced temperature range  PC Board Mounting  Mechanically and spectrally matched to OP123 and OP223 LEDs  TX and TXV processing available (see Hi-Rel section) Description: Each device in this series is a NPN silicon phototransistor in a hermetically sealed pill package. The narrow receiving angle provides excellent on-axis coupling The OP600 series devices are 100% production tested using infrared light for close correlation with OPTEK GaAs and GaAIAs emitters. Components in the OP600 series are mechanically and spectrally matched to the OP123 and OP233 series TX and TXV components are available. For more information, please contact your local representative or OPTEK. Please refer to Application Bulletins 208 and 210 for additional information and reliability (degradation) data, and to Application Bulletin 202 for pill-type soldering to PC Board. Applications: 1  Non-contact reflective object sensor  Machine safety Pin # Sensor  Assembly line automation  End of travel sensor 1 Collector/Cathode  Machine automation  Door sensor 2 Emitter/Anode Ordering Information Light Current Input Power Part I (mA) Viewing 2 C(ON) E (mW/cm2) Number Sensor Min / Max E Angle OP600A 1.20 / NA OP600B 0.60 / 1.80 2.5 OP600C Transistor 0.30 / NA 35° OP643SL 4.00 / 8.00 20.0 OP644SL 7.00 / 22.00 D IMENSIO DNSIMAREE N I N S : I O[IMnNcilhlSiems eters] I[MNCILHL- RoHS DO NOT LOOK DIRECTLY AT LED WITH UNSHIELDED EYES OR DAMAGE TO RETINA MAY General Note TT Electronics | Optek Technology, Inc. TT Electronics reserves the right to make changes in product specification without 1645 Wallace Drive, Ste. 130, Carrollton, TX USA 75006 |Ph: +1 972 323 2200 notice or liability. All information is subject to TT Electronics’ own data and is www.ttelectronics.com | sensors@ttelectronics.com considered accurate at time of going to print. © TT electronics plc Issue B 09/2017 Page 1

NPN Silicon Phototransistor OP600 Series Absolute Maximum Ratings (TA = 25˚C unless otherwise noted) Collector-Emitter Voltage 25 V Emitter-Collector Voltage 5 V Storage Temperature Range -65° C to +150° C Operating Temperature Range -65° C to +125° C Soldering Temperature (5 seconds with soldering iron) 260° C(1)(2) Power Dissipation 50 mW(3) Continuous Collector Current 50 mA Electrical Characteristics (T = 25° C unless otherwise noted) A SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS V = 5 V, E = 2.5 mW/cm2(5) CE E On-State Collector Current - OP600A 1.2 - 1.8 OP600B 0.6 - 1.8 I (4) mA C(ON) OP600C 0.3 - 1.8 V = 5 V, E = 20 mW/cm2(5) OP643SL 4.0 - 8.0 CE E OP644SL 7.0 - 22.0 - I Collector-Dark Current - - - nA V = 10 V, E = 0 CEO CE E V Collector-Emitter Breakdown Voltage 25 - - V I = 100 μA (BR)CEO C V Emitter-Collector Breakdown Voltage 5 - - V I = 100 μA (BR)ECO E Collector-Emitter V (4) OP600 (A, B, C)(2)(7) - - 0.4 V I = 0.15 mA, E = 2.5 mW/cm2(5) CE(SAT) C E OP643-644 (SL)(2)(7) I = 0.4 mA, E = 20 mW/cm2(5) C E V = 5 V, I = 0.80 mA, t Rise Time - 15 - µs cc C r R = 1 kΩ, See Test Circuit L V = 5 V, I = 0.80 mA, t Fall Time - 15 - µs cc C f R = 1 kΩ, See Test Circuit L Notes: (1) Refer to Application Bulleting 202, which discusses proper techniques for soldering pill-type devices to PCBoards. (2) No clean or low solids. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. (3) Derate linearly 0.5 mW/° C above 25° C. (4) Junction temperature maintained at 25° C. (5) For OP600A, OP600B and OP600C, light source is a GaAIAs LED, peak wavelength = 890 nm, that provides irradiance of 2.5 mW/cm2. The source irradiance is not necessarily uniform over the entire lens area of the unit being tested. (6) For OP643SL and OP644SL, light source is an unfiltered tungsten bulb operating at CT = 2870 K or equivalent infrared source. General Note TT Electronics | Optek Technology, Inc. TT Electronics reserves the right to make changes in product specification without 1645 Wallace Drive, Ste. 130, Carrollton, TX USA 75006 |Ph: +1 972 323 2200 notice or liability. All information is subject to TT Electronics’ own data and is www.ttelectronics.com | sensors@ttelectronics.com considered accurate at time of going to print. © TT electronics plc Issue B 09/2017 Page 2

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