图片仅供参考

详细数据请看参考数据手册

Datasheet下载
  • 型号: SDP8405-014
  • 制造商: Honeywell Solid State Electronics
  • 库位|库存: xxxx|xxxx
  • 要求:
数量阶梯 香港交货 国内含税
+xxxx $xxxx ¥xxxx

查看当月历史价格

查看今年历史价格

SDP8405-014产品简介:

ICGOO电子元器件商城为您提供SDP8405-014由Honeywell Solid State Electronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 SDP8405-014价格参考。Honeywell Solid State ElectronicsSDP8405-014封装/规格:光学传感器 - 光电晶体管, Phototransistor 935nm Top View Radial。您可以下载SDP8405-014参考资料、Datasheet数据手册功能说明书,资料中有SDP8405-014 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

传感器,变送器

描述

PHOTOTRANSISTOR SILICON NPN T-1光电晶体管 Silicon PhotoTrans T-1 Plastic Package

产品分类

光学传感器 - 光电晶体管

品牌

Honeywell

产品手册

http://sensing.honeywell.com/product%20page?pr_id=40501

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

光电晶体管,Honeywell SDP8405-014*

数据手册

点击此处下载产品Datasheethttp://sensing.honeywell.com/index.php/ci_id/47913/la_id/1/document/1/re_id/0

产品型号

SDP8405-014

上升时间

15 us

下降时间

15 us

产品

Phototransistors

产品目录页面

点击此处下载产品Datasheet

产品种类

光电晶体管

其它名称

480-1954
SDP8405014

功率-最大值

70mW

商标

Honeywell

安装类型

通孔

封装/外壳

径向

封装/箱体

T-1

最大功率耗散

70 mW

最大工作温度

+ 85 C

最大暗电流

100 nA

最小工作温度

- 40 C

朝向

顶视图

标准包装

1

波长

880 nm

电压-集射极击穿(最大值)

30V

电流-暗(Id)(最大值)

100nA

电流-集电极(Ic)(最大值)

1.85mA

类型

Photodetector Transistors

视角

20°

集电极—发射极最大电压VCEO

30 V

集电极—射极击穿电压

30 V

集电极—射极饱和电压

0.4 V

推荐商品

型号:PT2559B/L2-F

品牌:Everlight Electronics Co Ltd

产品名称:传感器,变送器

获取报价

型号:PNA2W01M

品牌:Panasonic Electronic Components

产品名称:传感器,变送器

获取报价

型号:SDP8405-003

品牌:Honeywell Sensing and Productivity Solutions

产品名称:传感器,变送器

获取报价

型号:SFH 3400-2/3-Z

品牌:OSRAM Opto Semiconductors Inc.

产品名称:传感器,变送器

获取报价

型号:SD3443-002

品牌:Honeywell Sensing and Productivity Solutions

产品名称:传感器,变送器

获取报价

型号:KDT00030ATR

品牌:ON Semiconductor

产品名称:传感器,变送器

获取报价

型号:APDS-9002-021

品牌:Broadcom Limited

产品名称:传感器,变送器

获取报价

型号:PT91-21B/TR7

品牌:Everlight Electronics Co Ltd

产品名称:传感器,变送器

获取报价

样品试用

万种样品免费试用

去申请
SDP8405-014 相关产品

TEMT7100X01

品牌:Vishay Semiconductor Opto Division

价格:¥2.15-¥2.61

SFH 3500-Z

品牌:OSRAM Opto Semiconductors Inc.

价格:

SDP8405-014

品牌:Honeywell Sensing and Productivity Solutions

价格:

PT26-51B/TR8

品牌:Everlight Electronics Co Ltd

价格:

OP830SL

品牌:TT Electronics/Optek Technology

价格:¥13.12-¥15.00

QSB363

品牌:ON Semiconductor

价格:

QSB320TR

品牌:ON Semiconductor

价格:

SD1410-004L

品牌:Honeywell Sensing and Productivity Solutions

价格:

PDF Datasheet 数据手册内容提取

SDP8405 Silicon Phototransistor FEATURES • T-1 plastic package • 20¡ (nominal) acceptance angle • Consistent optical properties Wide sensitivity ranges • Mechanically and spectrally matched to SEP8505 and SEP8705 infrared emitting diodes INFRA-22.TIF DESCRIPTION OUTLINE DIMENSIONSin inches (mm) The SDP8405 is an NPN silicon phototransistor transfer Tolerance 3 plc decimals ±0.005(0.12) molded in a T-1 clear plastic package. Transfer molding 2 plc decimals ±0.020(0.51) of this device assures superior optical centerline performance compared to other molding processes. Lead lengths are staggered to provide a simple method .200(5.08) of polarity identification. .180(4.57) .03(.76) .020SQ.LEADTYP .05(1.27) (.51) COLLECTOR .050 (1.27) EMITTER .125(3.18) .115(2.92)DIA. .155 DIA. .500 (3.94) (12.7)MIN. .250 (6.35) MAX. DIM_100.ds4 h Honeywell reserves the right to make 116 changes in order to improve design and supply the best products possible. •

SDP8405 Silicon Phototransistor ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS ABSOLUTE MAXIMUM RATINGS SCHEMATIC (25¡C Free-Air Temperature unless otherwise noted) Collector-Emitter Voltage 30 V Emitter-Collector Voltage 5 V Power Dissipation 70 mW [À] Operating Temperature Range -40¡C to 85¡C Storage Temperature Range -40¡C to 85¡C Soldering Temperature (5 sec) 240¡C Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.18 mW/¡C. Honeywell reserves the right to make h changes in order to improve design and 117 supply the best products possible.

SDP8405 Silicon Phototransistor SWITCHING TIME TEST CIRCUIT SWITCHING WAVEFORM cir_015.cdr cir_004.cdr Fig. 1 Responsivity vs Fig. 2 Collector Current vs Angular Displacement gra_047.ds4 Ambient Temperature gra_039.ds4 1.0 2.0 0.9 e 0.8 ro 1.6 lit rvsseaeepon 00000.....34567 li lltzccaedoemt rrcuen 01..82 R 0.2 roN 0.4 0.1 0.0 0.0 -40 -30 -20 -10 0 +10 +20 +30 +40 0 10 20 30 40 50 60 70 80 Angular displacement - degrees Ambient temperature - °C Fig. 3 Dark Current vs Fig. 4 Non-Saturated Switching Time vs Temperature gra_301.cdr Load Resistance gra_041.ds4 100 s µ - e m i te 10 s n o p s e R 1 10 100 1000 10000 Load resistance - Ohms h Honeywell reserves the right to make 118 changes in order to improve design and supply the best products possible.

SDP8405 Silicon Phototransistor Fig. 5 Spectral Responsivity Fig. 6 Coupling Characteristics gra_036.ds4 with SEP8505 gra_029.ds4 1.0 10 0.9 7 sspone 000...678 t -nAm 24 ITFVA =C =E 2 =25 5 5m °VCA lit rveaeeR 0000....2345 it rrcLghue 000...1247 0.1 0.1 400 600 800 1000 1200 0.01 0.02 0.04 0.1 0.2 0.4 0.7 1 Wavele ngth - nm Lens-to-lens separation - inches All Performance Curves Show Typical Values Honeywell reserves the right to make h changes in order to improve design and 119 supply the best products possible.