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  • 型号: SD2440-002
  • 制造商: Honeywell Solid State Electronics
  • 库位|库存: xxxx|xxxx
  • 要求:
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SD2440-002产品简介:

ICGOO电子元器件商城为您提供SD2440-002由Honeywell Solid State Electronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 SD2440-002价格参考。Honeywell Solid State ElectronicsSD2440-002封装/规格:光学传感器 - 光电晶体管, Phototransistor 880nm Top View Pill。您可以下载SD2440-002参考资料、Datasheet数据手册功能说明书,资料中有SD2440-002 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

传感器,变送器

描述

PHOTOTRANSISTOR PILL PACK光电晶体管 Silicon Phototransis

产品分类

光学传感器 - 光电晶体管

品牌

Honeywell Sensing and Control

产品手册

http://sensing.honeywell.com/product%20page?pr_id=40400

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

光电晶体管,Honeywell SD2440-002-

数据手册

点击此处下载产品Datasheethttp://sensing.honeywell.com/index.php/ci_id/47913/la_id/1/document/1/re_id/0

产品型号

SD2440-002

上升时间

15 us

下降时间

15 us

产品

Phototransistors

产品种类

光电晶体管

其它名称

480-3572
SD2440-002-ND
SD2440002

功率-最大值

125mW

商标

Honeywell

安装类型

PCB,通孔

封装/外壳

丸状

封装/箱体

Metal Can

最大功率耗散

125 mW

最大工作温度

+ 125 C

最小工作温度

- 55 C

朝向

顶视图

标准包装

1

波长

880nm

电压-集射极击穿(最大值)

30V

电流-暗(Id)(最大值)

100nA

电流-集电极(Ic)(最大值)

-

类型

Photodetector Transistors

视角

48°

集电极—发射极最大电压VCEO

30 V

集电极—射极击穿电压

30 V

集电极—射极饱和电压

0.4 V

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PDF Datasheet 数据手册内容提取

SD2440 Silicon Phototransistor FEATURES • Miniature, hermetically sealed, pill style, metal can package • 48¡ acceptance angle • Wide operating temperature range ( 55¡C to +125¡C) • Ideal for direct mounting to printed circuit boards • Wide sensitivity ranges • Mechanically and spectrally matched to SE2460 and SE2470 infrared emitting diodes INFRA--1.TIF DESCRIPTION OUTLINE DIMENSIONSin inches (mm) The SD2440 is an NPN silicon phototransistor mounted Tolerance 3 plc decimals ±0.005(0.12) in a hermetically sealed glass lensed metal can 2 plc decimals ±0.020(0.51) package. This package directly mounts in a double sided PC board. DIM_013.cdr h Honeywell reserves the right to make 104 changes in order to improve design and supply the best products possible.

SD2440 Silicon Phototransistor ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS ABSOLUTE MAXIMUM RATINGS SCHEMATIC (25¡C Free-Air Temperature unless otherwise noted) Collector-Emitter Voltage 30 V Emitter-Collector Voltage 5 V Power Dissipation 125 mW [À] Operating Temperature Range -55¡C to 125¡C Storage Temperature Range -65¡C to 150¡C Soldering Temperature (10 sec) 260¡C Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 1.19 mW/¡C. Honeywell reserves the right to make h changes in order to improve design and 105 supply the best products possible.

SD2440 Silicon Phototransistor SWITCHING TIME TEST CIRCUIT SWITCHING WAVEFORM cir_015.cdr cir_004.cdr Fig. 1 Responsivity vs Fig. 2 Collector Current vs Angular Displacement gra_037.ds4 Ambient Temperature gra_039.ds4 1.0 2.0 0.9 e 0.8 ro 1.6 lit rvsseaeepon 00000.....34567 li lltzccaedoemt rrcuen 01..82 R 0.2 roN 0.4 0.1 0.0 0.0 -60 -45 -30 -15 0 +15 +30 +45 +60 0 10 20 30 40 50 60 70 80 Angular displacement - degrees Ambient temperature - °C Fig. 3 Dark Current vs Fig. 4 Non-Saturated Switching Time vs Temperature gra_303.cdr Load Resistance gra_041.ds4 100 s µ - e m i te 10 s n o p s e R 1 10 100 1000 10000 Load resistance - Ohms h Honeywell reserves the right to make 106 changes in order to improve design and supply the best products possible.

SD2440 Silicon Phototransistor Fig. 5 Spectral Responsivity Fig. 6 Coupling Characteristics gra_036.ds4 with SE2460 gra_015.ds4 1.0 1.0 0.9 0.9 sone 00..78 t gh 00..78 lit rvseaeep 0000....3456 li lirzoaedmt rrcuen 0000....3456 R 0.2 N 0.2 0.1 0.1 0.0 400 600 800 1000 1200 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Wavele ngth - nm Lens-to-lens separation - inches All Performance Curves Show Typical Values Honeywell reserves the right to make h changes in order to improve design and 107 supply the best products possible.