OPB732  PC board mounting (OPB732)  24” (610 mm) 26 AWG wired with mounting tabs (OPB732WZ)  Non-contact infrared switch OPB732WZ  Up to 1” or more reflective distance depending on circuitry OPB732 uses an Infrared LED and Phototransistor in a reflective switch configuration. The assembly is offered with either PCBoard through hole pins (OPB732) or 24” (610 mm), 26 AWG wires (OPB732WZ), and uses an opaque housing to reduce the sensor’s ambient light sensitivity. The emitter and sensor are protected by a clear window, providing a device that can operate in a dusty environment. The phototransistor can be configured as a Common Collector or Common Emitter device. While an object is in the reflective path of the device, light from the LED will be reflected back to the housing irradiating the surface (base) of the phototransistor. When Infrared light strikes the phototransistor, the transistor becomes forward biased and is considered to be in the “ON” state, providing an I current proportional to the light striking the C(ON) phototransistor. With the Infrared light from the LED not being reflected to the phototransistor, the phototransistor turns “OFF,” minimizing the I current. C(ON) Custom electrical, wire and cabling and connectors are Ordering Information available. Contact your local representative or OPTEK for Part LED Peak Lead Length / Spacing more information. Number Wavelength OPB732 0.150”/ see diagram 850 nm OPB732WZ 24" / 26 AWG Wire  Non-contact reflective object sensor  Assembly line automation  Machine automation  Equipment security  Door sensor  Machine safety  End of travel sensor RoHS

[ MILLIMETERS] DIMENSIONS ARE IN: INCHES 3 2 Pin # LED Green-1 Emitter White-2 Collector [7.62] Red-3 Anode .300 MIN. Black-4 Cathode 4 1 OPB732 OPB732WZ

Storage Temperature -40° C to +100° C Operating Temperature -40° C to +85° C Lead Soldering Temperature (1/16” (1.6mm) from case for 5 seconds with soldering iron)(2) 260° C Forward Current 50 mA Peak Forward current (2 μs pulse width, 0.1% Duty Cycle) 1 A Reverse DC Voltage 3 V Power Dissipation 100 mW Collector-Emitter Voltage 30 V Collector DC Current 50 mA Power Dissipation 100 mW V Forward Voltage - - 1.8 V I = 20 mA F F I Reverse Current - - 100 μA V = 2 V R R V Collector-Emitter Breakdown Voltage 30 - - V I = 100 µA, E = 0 mw/cm2 (BR)CEO C E I Collector-Emitter Dark Current - - 100 nA V = 10 V, E = 0 mw/cm2 CEO CE E V Collector-Emitter Saturation Voltage(4) - - 0.4 V I = 250 µA, I = 30 mA , (4) CE(SAT) C F I On-State Collector Current(4) 0.25 - - mA V = 1 V, I = 30 mA, (4) C(ON) CE F V = 5 V, I = 30 mA, I Cross Talk - - 50 µA CE F CX No reflective surface Notes: (1) All parameters tested using pulse technique. (2) RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. (3) Methanol or isopropanol are recommended as cleaning agents. The plastic housing is soluble in chlorinated hydrocarbons and keytones. (4) Distance = 1” (from front of package to a 90% diffuse reflective white card)

I vs Distance (I =30mA) I C(ONv)s Distance (I =F30mA) C(ON) F 1.6 Normalized at 1.00 inches 1.4 1.2 N) 1.0 O C( d I e z 0.8 ali m r o 0.6 N 0.4 0.2 0.0 0 0 0 0 0 0 0 0 5 0 5 0 5 0 0. 0. 1. 1. 2. 2. 3. Distance (inches) DC—Drive Circuit for LED & Phototransistor VCC VCC RD=VCCI-D VLED RD RL RL=VCCI-L VCE RD=VCCI-D VLED RD Inverted Output Light Light Output RL RL=VCCI-L VCE VEE(GND) VEE(GND) PuPlsueldse—d -D Drirvivee Cr iCrciruciuti tfso fro Lr ELDE D& & P hPohototottrraannssiissttoorr VCC VCC RD=VCC- VILDED- VCE RD RL RL=VCCI-L VCE RD=VCC- VILDED- VCE RD Inverted Output Light Light Output Drive Drive Ckt. Ckt. RL RL=VCCI-L VCE VEE(GND) VEE(GND)

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