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  • 型号: QRD1113
  • 制造商: Fairchild Semiconductor
  • 库位|库存: xxxx|xxxx
  • 要求:
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QRD1113产品简介:

ICGOO电子元器件商城为您提供QRD1113由Fairchild Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 QRD1113价格参考¥3.17-¥3.96。Fairchild SemiconductorQRD1113封装/规格:光学传感器 - 反射式 - 模拟输出, Reflective Optical Sensor 0.050" (1.27mm) Radial - 4 Leads。您可以下载QRD1113参考资料、Datasheet数据手册功能说明书,资料中有QRD1113 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

传感器,变送器

描述

SENSR OPTO TRANS 1.27MM REFL PCB光学开关(反射型,光电晶体管输出) REFL OBJECT SENSOR

产品分类

光学传感器 - 反射式 - 模拟输出

品牌

Fairchild Semiconductor

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

光学开关(反射型,光电晶体管输出),Fairchild Semiconductor QRD1113-

数据手册

点击此处下载产品Datasheet

产品型号

QRD1113

上升时间

10 us

下降时间

50 us

产品种类

光学开关(反射型,光电晶体管输出)

包装

散装

反向电压

5 V

响应时间

10µs, 50µs

商标

Fairchild Semiconductor

安装类型

通孔

安装风格

Through Hole

封装

Bulk

封装/外壳

PCB 安装

工作温度

-40°C ~ 85°C

工厂包装数量

100

感应方式

Reflective

感应方法

反射

感应距离

1.27 mm

最大工作温度

+ 85 C

最大集电极电流

0.3 mA

最小工作温度

- 40 C

标准包装

100

正向电压

1.7 V

正向电流

20 mA

波长

940 nm

电压-集射极击穿(最大值)

30V

电流-DC正向(If)

50mA

电流-集电极(Ic)(最大值)

-

系列

QRD1113

输出类型

光电晶体管

输出设备

Phototransistor

集电极—发射极最大电压VCEO

30 V

零件号别名

QRD1113_NL

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PDF Datasheet 数据手册内容提取

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

Q R D 1 June 2017 1 1 3 / Q R D QRD1113 / QRD1114 1 1 1 Reflective Object Sensor 4 — R e f l e Features Description c t i The QRD1113 and QRD1114 reflective sensors consist of v • Phototransistor Output e an infrared emitting diode and an NPN silicon phototrans- • No-Contact Surface Sensing O istor mounted side by side in a black plastic housing. The b • Unfocused for Sensing Diffused Surfaces on-axis radiation of the emitter and the on-axis response je • Compact Package of the detector are both perpendicular to the face of the c t • Daylight Filter on sensor QRD1113 and QRD1114. The phototransistor responds S to radiation emitted from the diode only when a reflective e n object or surface is in the field of view of the detector. s o r Schematic 2 3 1 4 PIN 1. Collector PIN 3. Anode PIN 2. Emitter PIN 4. Cathode Ordering Information Operating Part Number Package Top Mark Packing Method Temperature QRD1113 Custom 4L QRD1113 Bulk -40 to +85°C QRD1114 Custom 4L QRD1114 Bulk © 2005 Fairchild Semiconductor Corporation www.fairchildsemi.com QRD1113 / QRD1114 Rev. 1.3..0 1

Q R Absolute Maximum Ratings D 1 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- 1 1 ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- 3 tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The / absolute maximum ratings are stress ratings only. Values are at T = 25°C unless otherwise specified. Q A R Symbol Parameter Min. Unit D 1 T Operating Temperature -40 to +85 1 OPR 1 4 TSTG Storage Temperature -40 to + 100 °C — TSOL-I Lead Temperature (Solder Iron)(1,2,3) 240 for 5 s R T Lead Temperature (Solder Flow)(1,2) 260 for 10 s e SOL-F f l EMMITER e c t I Continuous Forward Current 50 mA i F v e VR Reverse Voltage 5 V O P Power Dissipation 100 mW b D j e SEMSOR c t VCEO Collector-Emitter Voltage 30 V S e V Emitter-Collector Voltage V n ECO s P Power Dissipation(4) 100 mW o D r Notes: 1.RMA flux is recommended. 2.Methanol or isopropyl alcohols are recommended as cleaning agents. 3.Soldering iron tip 1/16 inch (1.6 mm) minimum from housing. 4.Derate power dissipation linearly 1.33 mW/°C. © 2005 Fairchild Semiconductor Corporation www.fairchildsemi.com QRD1113 / QRD1114 Rev. 1.3.0 2

Q R Electrical / Optical Characteristics D 1 1 Values are at T = 25°C unless specified otherwise. 1 A 3 Symbol Parameter Test Conditions Min. Typ. Max. Units / Q INPUT (Emitter) R V Forward Voltage I = 20 mA 1.7 V D F F 1 IR Reverse Leakage Current VR = 5 V 100 μA 11 λ Peak Emission Wavelength I = 20 mA 940 nm 4 PE F — OUTPUT (Sensor) R BV Collector-Emitter Breakdown I = 1 mA 30 V CEO C e f BV Emitter-Collector Breakdown I = 0.1 mA 5 V l ECO E e c ID Dark Current VCE = 10 V, IF = 0 mA 100 nA ti v COUPLED e IICC((OONN)) QQRRDD11111134 CCoolllleeccttoorr CCuurrrreenntt IDF == 02.00 5m0A i,n VchC(E5 , =7 )5 V, 0.3100 mmAA Obje I = 40 mA, I = 100 μA, c VCE(SAT) Collector Emitter Saturation Voltage DF = 0.050 incCh(5, 7) 0.4 V t S e ICX Cross Talk IEF = = 2 00( 6m)A, VCE =5 V, 0.2 10.0 μA ns E o tr Rise Time VCE = 5 V, RL = 100 Ω, 10 μs r tf Fall time IC(ON) = 5 mA 50 μs Notes: 5.D is the distance from the sensor face to the reflective surface. 6.Crosstalk (I ) is the collector current measured with the indicated current on the input diode and with no reflective CK surface. 7.Measured using Eastman Kodak natural white test card with 90% diffused reflecting as a reflecting surface. © 2005 Fairchild Semiconductor Corporation www.fairchildsemi.com QRD1113 / QRD1114 Rev. 1.3.0 3

Q R Typical Performance Characteristics D 1 1 1 3 / Q R D 1 1 1 4 — R e f l e 0.80 c t i v e O b j e c t S e n s o r Figure 1. Forward Voltage vs. Forward Current Figure 2. Normalized Collector Current vs. Forward Current Figure 3. Normalized Collector Current vs. Figure 4. Normalized Collector Dark Current vs. Temperature Temperature © 2005 Fairchild Semiconductor Corporation www.fairchildsemi.com QRD1113 / QRD1114 Rev. 1.3.0 4

Q R Typical Performance Characteristics (continued) D 1 1 1 3 / Q R D 1 1 1 4 — R e f l e c t i v e O b j e c t S e n s o r Figure 5. Normalized Collector Current vs. Distance © 2005 Fairchild Semiconductor Corporation www.fairchildsemi.com QRD1113 / QRD1114 Rev. 1.3.0 5

Q R Physical Dimensions D 1 1 1 3 / Custom 4L Q R D 1 1 1 4 0.083 (2.11) PIN 1 INDICATOR — OPTICAL R e CENTERLINE f l e c 0.240 (6.10) ti v 0.120 (3.05) e O b j 0.173 (4.39) e c t S e 0.183 (4.65) n s o r 0.500 (12.7) MIN 0.020 (0.51) SQ. (4X) 2 3 0.100 (2.54) 1 4 0.083 (2.11) Notes: 1.Dimensions for all drawings are in inches (millimeters). 2.Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified. 3.Pins 2 and 4 typically .050" shorter than pins 1 and 3. 4.Dimensions controlled at housing surface. Figure 6. REFLECTIVE RECTANGULAR SENSOR PCB MOUNT (ACTIVE) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/packaging/. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-ARU311A-LOCZ.pdf. © 2005 Fairchild Semiconductor Corporation www.fairchildsemi.com QRD1113 / QRD1114 Rev. 1.3.0 6

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative © Semiconductor Components Industries, LLC www.onsemi.com www.onsemi.com 1

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