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  • 型号: HMC435MS8GE
  • 制造商: Hittite
  • 库位|库存: xxxx|xxxx
  • 要求:
数量阶梯 香港交货 国内含税
+xxxx $xxxx ¥xxxx

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HMC435MS8GE产品简介:

ICGOO电子元器件商城为您提供HMC435MS8GE由Hittite设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 HMC435MS8GE价格参考。HittiteHMC435MS8GE封装/规格:RF 开关, RF Switch IC General Purpose SPDT 4GHz 50Ohm 8-MSOP-EP。您可以下载HMC435MS8GE参考资料、Datasheet数据手册功能说明书,资料中有HMC435MS8GE 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

射频/IF 和 RFID

描述

IC SWITCH SPDT 8MSOP

产品分类

RF 开关

IIP3

45dBm (标准)

品牌

Hittite Microwave Corporation

数据手册

点击此处下载产品Datasheet

产品图片

P1dB

31dBm (标准) IP1dB

产品型号

HMC435MS8GE

RF类型

通用

rohs

无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

-

供应商器件封装

8-MSOP-EP

其它名称

1127-1040-1

包装

剪切带 (CT)

封装/外壳

8-TSSOP,8-MSOP(0.118",3.00mm 宽)裸焊盘

工作温度

-40°C ~ 85°C

拓扑

吸收性

插损@频率

1.5dB @ 4GHz

标准包装

1

特性

-

电压-电源

5V

电路

SPDT

阻抗

50 欧姆

隔离@频率

35dB @ 4GHz (标准)

频率 -上

4GHz

频率 -下

DC

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PDF Datasheet 数据手册内容提取

HMC435MS8G 435MS8GE / v05.0110 SPDT NON-REFLECTIVE SWITCH, DC - 4 GHz Typical Applications Features The HMC435MS8G(E) is ideal for: High Isolation: 60 dB @ 1 GHz 50 dB @ 2 GHz • Basestations & Repeaters Positive Control: 0/+5V • Cellular/3G and WiMAX/4G Input IP3: 51 dBm • Infrastructure and Access Points Non-Refl ective Design • CATV/CMTS Ultra Small MSOP-86 Package: 14.8 mm2 • Test Instrumentation Functional Diagram General Description The HMC435MS8G(E) is a non-refl ective DC to 4 GHz GaAs MESFET SPDT switch in a low cost 8 lead MSOP8G surface mount package with exposed 11 ground paddle. The switch is ideal for cellular/3G and WiMAX/4G applications yielding up to 60 dB isolation, low 0.8 dB insertion loss and +50 dBm input IP3. Power handling is excellent up through the T 3.8 GHz WiMAX band with the switch offering a P1dB M compression of +31 dBm. On-chip circuitry allows S positive voltage control of 0/+5 Volts at very low DC - currents. T D P S - Electrical Specifi cations, T = +25° C, Vctl = 0/+5 Vdc, 50 Ohm System S A E Parameter Frequency Min. Typ. Max. Units H DC - 2.5 GHz 0.8 1.0 dB C Insertion Loss DC - 3.6 GHz 1.2 1.5 dB T DC - 4.0 GHz 1.5 1.8 dB WI DC - 1.0 GHz 56 60 dB DC - 2.0 GHz 46 50 dB S Isolation (RFC to RF1/RF2) DC - 2.5 GHz 43 47 dB DC - 3.6 GHz 37 41 dB DC - 4.0 GHz 30 35 dB DC - 2.5 GHz 15 20 dB Return Loss (On State) DC - 3.6 GHz 13 17 dB DC - 4.0 GHz 11 15 dB Return Loss (Off State) 0.5 - 4.0 GHz 16 21 dB Input Power for 1 dB Compression 0.5 - 4.0 GHz 27 31 dBm 0.5 - 1.0 GHz 48 51 Input Third Order Intercept 0.5 - 2.5 GHz 45 48 dBm (Two-Tone Input Power = +7 dBm Each Tone) 0.5 - 4.0 GHz 41 45 Switching Speed DC - 4.0 GHz tRISE, tFALL (10/90% RF) 40 ns tON, tOFF (50% CTL to 10/90% RF) 60 ns For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 11 - 122 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com

HMC435MS8G / 435MS8GE v05.0110 SPDT NON-REFLECTIVE SWITCH, DC - 4 GHz Insertion Loss Return Loss 0 0 -5 -1 RFC OSS (dB) -2 OSS (dB) -10 RRFF11,, RRFF22 OOFNF RTION L -3 ++ - 284550CCC TURN L --2105 E E S R N I -4 -25 -5 -30 0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) FREQUENCY (GHz) Isolation Between 11 Ports RFC and RF1 / RF2 Isolation Between Ports RF1 and RF2 0 0 -10 -10 T B) -20 RRFF12 B) -20 RRFFCC -- RRFF12 OONN M d d N ( -30 N ( -30 S O O ATI -40 ATI -40 - L L O O T IS -50 IS -50 D -60 -60 P S -70 -70 0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.5 1 1.5 2 2.5 3 3.5 4 - FREQUENCY (GHz) FREQUENCY (GHz) S E H C 0.1 and 1 dB Input Compression Point Input Third Order Intercept Point T 35 60 I 58 +25 C W +85 C 56 -40 C S m) 30 54 B d N ( m) 52 O B RESSI 25 IP3 (d 4580 P M 46 O 20 1 dB Compression Point C 0.1 dB Compression Point 44 42 15 40 0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 11 - 123 Order On-line at www.hittite.com

HMC435MS8G / 435MS8GE v05.0110 SPDT NON-REFLECTIVE SWITCH, DC - 4 GHz Control Voltages Absolute Maximum Ratings *Control Input Tolerances are ± 0.2 Vdc Control Voltage Range -0.5 to +7.5 Vdc State Bias Condition* RF Input Power Vctl = 0/+5V +31 dBm Low 0 Vdc @ 25 μA Typical RF1, RF2 Termination +26 dBm High +5 Vdc @ 25 μA Typical Junction Temperature 150 °C Continuous Pdiss Truth Table 0.52 W (derate 8 mW/ °C above 85 °C) Thermal Resistance - Insertion Loss Path Control Input Signal Path State 118 °C/W (channel to ground paddle) A B RFC to: Thermal Resistance - Termination Path 125 °C/W Low High RF1 (channel to ground paddle) High Low RF2 Storage Temperature -65 °C to +150 °C Operating Temperature -40 °C to +85 °C DC blocks are required at ports RFC, RF1, RF2. ESD Sensitivity (HBM) Class 1A Do not operate continuously at RF power input greater than 1 dB compression and do not “Hot Switch” power levels ELECTROSTATIC SENSITIVE DEVICE greater than +24 dBm (control = 0/+5 Vdc). 11 OBSERVE HANDLING PRECAUTIONS Outline Drawing T M S - T D P S - S E H C T NOTES: I 1. LEADFRAME MATERIAL: COPPER ALLOY W 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. S 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number Package Body Material Lead Finish MSL Rating Package Marking [3] HMC435MS8G Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] H435 XXXX HMC435MS8GE RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] H435 XXXX [1] Max peak refl ow temperature of 235 °C [2] Max peak refl ow temperature of 260 °C [3] 4-Digit lot number XXXX For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 11 - 124 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com

HMC435MS8G / 435MS8GE v05.0110 SPDT NON-REFLECTIVE SWITCH, DC - 4 GHz Pin Descriptions Pin Number Function Description Interface Schematic 1 A See truth and control voltage tables. 2 B See truth and control voltage tables. These pins are DC coupled and matched to 50 Ohms. 3, 5, 8 RFC, RF1, RF2 Blocking capacitors are required. The pins are not connected internally; however, all 4 N/C data shown herein was measured with these pins connected to RF/DC ground externally. Package bottom has exposed metal paddle that must 6, 7 GND be connected to PCB RF ground as well. Evaluation PCB 11 T M S - T D P S - S E H C T I W List of Materials for Evaluation PCB 105143 [1] S The circuit board used in the application should Item Description be generated with proper RF circuit design tech- J1 - J3 PCB Mount SMA RF Connector niques. Signal lines at the RF port should have J4 - J7 DC Pin 50 Ohm impedance and the package ground leads C1 - C3 100 pF Capacitor, 0402 Pkg. and backside ground slug should be connected R1 - R2 100 Ohm Resistor, 0402 Pkg. directly to the ground plane similar to that shown U1 HMC435MS8G(E) SPDT Switch above. The evaluation circuit board shown above is PCB [2] 104122 Evaluation PCB available from Hittite Microwave Corporation upon [1] Reference this number when ordering complete evaluation PCB request. [2] Circuit Board Material: Rogers 4350 Note: Pin J6 is unused and need not be connected. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 11 - 125 Order On-line at www.hittite.com