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  • 型号: HMC219AMS8E
  • 制造商: Hittite
  • 库位|库存: xxxx|xxxx
  • 要求:
数量阶梯 香港交货 国内含税
+xxxx $xxxx ¥xxxx

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HMC219AMS8E产品简介:

ICGOO电子元器件商城为您提供HMC219AMS8E由Hittite设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 HMC219AMS8E价格参考。HittiteHMC219AMS8E封装/规格:RF 混频器, RF Mixer IC General Purpose Up/Down Converter 4.5GHz ~ 9GHz 8-MSOP。您可以下载HMC219AMS8E参考资料、Datasheet数据手册功能说明书,资料中有HMC219AMS8E 详细功能的应用电路图电压和使用方法及教程。

HMC219AMS8E 是由 Analog Devices Inc.(ADI)生产的一款 RF 混频器,属于高性能射频和微波器件。其应用场景主要包括以下领域:

1. 无线通信基础设施:  
   HMC219AMS8E 可用于基站、中继站和其他无线通信设备中的上变频和下变频操作。其宽频率范围(支持高达 14 GHz 的射频和本振信号)和高线性度特性使其非常适合现代通信系统,例如 4G LTE 和 5G 前传网络。

2. 雷达系统:  
   在军事和民用雷达应用中,该混频器可用于信号处理环节,实现目标检测和跟踪功能。其低噪声和高动态范围性能能够提高雷达系统的分辨率和灵敏度。

3. 卫星通信:  
   卫星地面站和用户终端需要高效的频率转换设备,HMC219AMS8E 可以满足 Ku 波段及更高频率的上下变频需求,确保数据传输的稳定性和可靠性。

4. 测试与测量仪器:  
   高端频谱分析仪、信号发生器等测试设备需要精确的频率转换组件,这款混频器凭借其出色的相位噪声特性和宽带能力,成为理想选择。

5. 点对点微波链路:  
   在固定无线接入网络中,HMC219AMS8E 能够为长距离、高带宽的数据传输提供必要的频率变换支持,适用于 E-Band 和其他高频段应用。

6. 航空航天电子系统:  
   由于具备优异的电气特性和紧凑封装形式,该混频器广泛应用于航空导航、飞行控制以及空间探索相关的射频子系统中。

总之,HMC219AMS8E 凭借其卓越的技术指标和灵活性,在众多需要高频信号处理的领域中发挥重要作用。
产品参数 图文手册 常见问题
参数 数值
产品目录

射频/IF 和 RFID

描述

IC MIXER 4.5-9GHZ UP/DWN 8MSOP

产品分类

RF 混频器

品牌

Hittite Microwave Corporation

数据手册

点击此处下载产品Datasheet

产品图片

产品型号

HMC219AMS8E

RF类型

通用

rohs

无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

-

供应商器件封装

8-MSOP

其它名称

1127-1004-1

包装

剪切带 (CT)

噪声系数

8.5dB

增益

-

封装/外壳

8-TSSOP,8-MSOP(0.118",3.00mm 宽)

标准包装

1

混频器数

1

电压-电源

-

电流-电源

-

辅助属性

升/降频器

频率

4.5GHz ~ 9GHz

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PDF Datasheet 数据手册内容提取

HMC219AMS8 219AMS8E / v00.0810 GaAs MMIC SMT DOUBLE- BALANCED MIXER, 4.5 - 9 GHz Typical Applications Features The HMC219AMS8 / HMC219AMS8E is ideal for: Ultra Small Package: MSOP8 • UNII & HiperLAN Conversion Loss: 8.5 dB 10 • ISM LO / RF Isolation: 25 dB E • Microwave Radios T M T S Functional Diagram General Description - E D The HMC219AMS8 & HMC219AMS8E are ultra minia- E ture double-balanced mixers in 8 lead plastic surface C mount packages (MSOP). This passive MMIC mixer N L is constructed of GaAs Schottky diodes and novel A planar transformer baluns on the chip. The device can L A be used as an upconverter, downconverter, bi-phase O B (de)modulator, or phase comparator. The consistent MMIC performance will improve system operation and E L assure regulatory compliance. B S U O D B & E L G O N I Electrical Specifications, T = +25° C, As a Function of LO Drive S A - LO = +13 dBm LO = +11 dBm S Parameter IF = 100 MHz IF = 100 MHz Units R Min. Typ. Max. Min. Typ. Max. E Frequency Range, RF & LO 4.5 - 9.0 4.5 - 8.6 GHz X Frequency Range, IF DC - 2.5 DC - 2.5 GHz I Conversion Loss 8.5 10 8.5 10 dB M Noise Figure (SSB) 8.5 10 8.5 10 dB LO to RF Isolation 17 25 20 25 dB LO to IF Isolation 17 25 20 25 dB IP3 (Input) 15 21 15 21 dBm 1 dB Gain Compression (Input) 7 10 5 8 dBm InforFmaotiro np fruircniseh,e dd beyl iAvnealroyg Daenvidce st ois pbelaliecveed otor dbee arcsc:u rHateit taintde reMliaibcler. oHwowaevveer, Cnoo rpFoorr aptriiocen,, d2e0liv Aerlyp, haand R too apdla,c Ce horedlemrss: fAonrdal,o gM DAe v0ic1e8s2, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 10 - 1 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicaaPyt iorhenso uonlrt ofertoh:m e9r wit7sis 8ues -eu2.n dS5ep0re ca-inf3iyc 3aptia4otne3sn ts ou rb jpeFacttae tnoxt c:r hig9ahn7tgs 8eo wf- 2Aithn5oau0lot g-n 3oDti3ecve7i.c 3eNso . POhrodnee:r 7 O81n-3-l2i9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urepsppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D

HMC219AMS8 / 219AMS8E v00.0810 GaAs MMIC SMT DOUBLE- BALANCED MIXER, 4.5 - 9 GHz Conversion Loss vs Temperature @ LO = +13 dBm Isolation @ LO = +13 dBm 0 0 -10 B) LOSS (d -5 N (dB)-20 E 10 N O O-10 TI-30 SI A CONVER-15 ++-428055 CCC ISOL--5400 T LROF//IIFF MT LO/RF S -20 -60 - 4 5 6 7 8 9 10 4 5 E6 7 8 9 10 D FREQUENCY (GHz) FREQUENCY (GHz) E C L N Conversion Loss vs. LO Drive Return Loss @ LO = +13 dBm A 0 0 L A O B B) -5 S (d -5 dB) E LOS SS (-10 L ONVERSION --1150 +9 dBm S RETURN LO-15 RF OUB C ++1113 ddBBmm -20 LIFO D +15 dBBm & -20 -25 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10 E FREQUENCY (GHz) FREQUENCY (GHz) L O G P1dB vs. N IF Bandwidth @ LO = +13 dBm Temperature LO = +13 dBm I S 0 14 - S B) -5 13 R d OSS (-10 m) 12 E L B X SION dB (d MI ER-15 P1 11 V N CO-20 10 +-4205 CC +85 C -25 9 0 0.5 1 1.5 2 2.5 3 3.5 4 4 5 6 7 8 9 10 IF FREQUENCY (GHz) FREQUENCY (GHz) InforFmaotiro np fruircniseh,e dd beyl iAvnealroyg Daenvidce st ois pbelaliecveed otor dbee arcsc:u rHateit taintde reMliaibcler. oHwowaevveer, Cnoo rpFoorr aptriiocen,, d2e0liv Aerlyp, haand R too apdla,c Ce horedlemrss: fAonrdal,o gM DAe v0ic1e8s2, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that maPy rhesounlt fero:m 9 it7s 8us-e2. S5p0ec-if3ic3ati4on3s s u b jeFcta tox c: h9an7g8e w-2ith5ou0t -n3oti3ce7. 3No POhrodnee:r 7 O81n-3-l2i9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com 10 - 2 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urepsppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D

HMC219AMS8 / 219AMS8E v00.0810 GaAs MMIC SMT DOUBLE- BALANCED MIXER, 4.5 - 9 GHz Input IP3 vs. Input IP3 vs. LO Drive Temperature @ LO = +13 dBm 27 27 25 25 10 m) 23 m) 23 B B E d d 3 ( 3 ( P 21 P 21 T I T I U U P P T N 19 N 19 M I ++1113 ddBBmm I T +-4205 CC 17 +15 dBm 17 +85 C S 15 15 - 4 5 6 7 8 9 10 4 5 E6 7 8 9 10 D LO FREQUENCY (GHz) LO FREQUENCY (GHz) E C N InpLut IP2 vs. A Input IP2 vs. Drive Temperature @ LO = +13 dBm L 60 60 A O B 50 50 E m) m) B B L d d B T IP2 ( 40 S T IP2 ( 40 U U U P P N N O I I 30 30 -40 C D +11 dBm +25 C ++B1135 ddBBmm +85 C & 20 20 4 5 6 7 8 9 10 4 5 6 7 8 9 10 E LO FREQUENCY (GHz) LO FREQUENCY (GHz) L G O N I S - S R E X I M InforFmaotiro np fruircniseh,e dd beyl iAvnealroyg Daenvidce st ois pbelaliecveed otor dbee arcsc:u rHateit taintde reMliaibcler. oHwowaevveer, Cnoo rpFoorr aptriiocen,, d2e0liv Aerlyp, haand R too apdla,c Ce horedlemrss: fAonrdal,o gM DAe v0ic1e8s2, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 10 - 3 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicaaPyt iorhenso uonlrt ofertoh:m e9r wit7sis 8ues -eu2.n dS5ep0re ca-inf3iyc 3aptia4otne3sn ts ou rb jpeFacttae tnoxt c:r hig9ahn7tgs 8eo wf- 2Aithn5oau0lot g-n 3oDti3ecve7i.c 3eNso . POhrodnee:r 7 O81n-3-l2i9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urepsppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D

HMC219AMS8 / 219AMS8E v00.0810 GaAs MMIC SMT DOUBLE- BALANCED MIXER, 4.5 - 9 GHz MxN Spurious Outputs Harmonics of LO nLO LO Freq. nLO Spur at RF Port mRF 0 1 2 3 4 (GHz) 1 2 3 4 0 xx 9 12 16 34 4.0 31 22 32 58 10 1 19 0 22 32 49 5.0 32 21 E30 47 2 62 63 59 62 66 6.0 40 28 28 49 3 80 69 82 69 79 7.0 32 35 53 48 4 79 81 81 80 83 8.0 27 40 57 55 T T M RF = 6 GHz @ -10 dBm 9.0 22 52 48 xx LO = 6.1 GHz @ +13 dBm S LO = +13 dBm All values in dBc below the IF power level (-1RF + 1LO). Values in dBc below input LO level measured at the RF port. - E D E C L N Absolute Maximum Ratings A L RF / IF Input +13 dBm O ELECTROSTATIC SENSITIVE DEVICE A LO Drive +27 dBm B OBSERVE HANDLING PRECAUTIONS Storage Temperature -65 to +150 °C E Operating Temperature -40 to +85 °C L ESD Sensitivity (HBM) Class 1A B S U O D B & E L O G N I S - S R E X I M InforFmaotiro np fruircniseh,e dd beyl iAvnealroyg Daenvidce st ois pbelaliecveed otor dbee arcsc:u rHateit taintde reMliaibcler. oHwowaevveer, Cnoo rpFoorr aptriiocen,, d2e0liv Aerlyp, haand R too apdla,c Ce horedlemrss: fAonrdal,o gM DAe v0ic1e8s2, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that maPy rhesounlt fero:m 9 it7s 8us-e2. S5p0ec-if3ic3ati4on3s s u b jeFcta tox c: h9an7g8e w-2ith5ou0t -n3oti3ce7. 3No POhrodnee:r 7 O81n-3-l2i9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com 10 - 4 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urepsppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D

HMC219AMS8 / 219AMS8E v00.0810 GaAs MMIC SMT DOUBLE- BALANCED MIXER, 4.5 - 9 GHz Outline Drawing 10 E T M T S - E D E C N L A L A O B E L NOTES: B 1. LEADFRAME MATERIAL: COPPER ALLOY S 2. DIMENSIONS ARE IN INCHES [MILLIMETERS]. U 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. O 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. D 5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. B & E L G O N SI Package Information - Part Number Package Body Material Lead Finish MSL Rating Package Marking [3] S HMC219AMS8 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] 219A R XXXX E HMC219AMS8E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] 219A XXXX X I [1] Max peak reflow temperature of 235 °C M [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX InforFmaotiro np fruircniseh,e dd beyl iAvnealroyg Daenvidce st ois pbelaliecveed otor dbee arcsc:u rHateit taintde reMliaibcler. oHwowaevveer, Cnoo rpFoorr aptriiocen,, d2e0liv Aerlyp, haand R too apdla,c Ce horedlemrss: fAonrdal,o gM DAe v0ic1e8s2, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 10 - 5 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicaaPyt iorhenso uonlrt ofertoh:m e9r wit7sis 8ues -eu2.n dS5ep0re ca-inf3iyc 3aptia4otne3sn ts ou rb jpeFacttae tnoxt c:r hig9ahn7tgs 8eo wf- 2Aithn5oau0lot g-n 3oDti3ecve7i.c 3eNso . POhrodnee:r 7 O81n-3-l2i9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urepsppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D

HMC219AMS8 / 219AMS8E v00.0810 GaAs MMIC SMT DOUBLE- BALANCED MIXER, 4.5 - 9 GHz Evaluation Circuit Board 10 E T T M S - E D E C L N A L A O B E L B S U O D B & E L O G N List of Materials for Evaluation PCB 103350 [1] I S The circuit board used in the application should Item Description - use RF circuit design techniques. Signal lines J1 - J3 PCB Mount SMA RF Connector S should have 50 Ohm impedance while the pack- U1 HMC219AMS8 / HMC219AMS8E Mixer R PCB [2] 101650 Evaluation Board age ground leads should be connected directly E to the ground plane similar to that shown. A suf- X [1] Reference this number when ordering complete evaluation PCB ficient number of via holes should be used to I [2] Circuit Board Material: Rogers 4350 M connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. InforFmaotiro np fruircniseh,e dd beyl iAvnealroyg Daenvidce st ois pbelaliecveed otor dbee arcsc:u rHateit taintde reMliaibcler. oHwowaevveer, Cnoo rpFoorr aptriiocen,, d2e0liv Aerlyp, haand R too apdla,c Ce horedlemrss: fAonrdal,o gM DAe v0ic1e8s2, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that maPy rhesounlt fero:m 9 it7s 8us-e2. S5p0ec-if3ic3ati4on3s s u b jeFcta tox c: h9an7g8e w-2ith5ou0t -n3oti3ce7. 3No POhrodnee:r 7 O81n-3-l2i9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com 10 - 6 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urepsppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D