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  • 型号: BC639ZL1G
  • 制造商: ON Semiconductor
  • 库位|库存: xxxx|xxxx
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BC639ZL1G产品简介:

ICGOO电子元器件商城为您提供BC639ZL1G由ON Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 BC639ZL1G价格参考。ON SemiconductorBC639ZL1G封装/规格:晶体管 - 双极 (BJT) - 单, 双极 (BJT) 晶体管 NPN 80V 1A 200MHz 625mW 通孔 TO-92-3。您可以下载BC639ZL1G参考资料、Datasheet数据手册功能说明书,资料中有BC639ZL1G 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

TRANSISTOR NPN GP 80V 1A TO-92两极晶体管 - BJT 500mA 80V NPN

产品分类

晶体管(BJT) - 单路分离式半导体

品牌

ON Semiconductor

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

晶体管,两极晶体管 - BJT,ON Semiconductor BC639ZL1G-

数据手册

点击此处下载产品Datasheet

产品型号

BC639ZL1G

不同 Ib、Ic时的 Vce饱和值(最大值)

500mV @ 50mA,500mA

不同 Ic、Vce 时的DC电流增益(hFE)(最小值)

40 @ 150mA,2V

产品种类

两极晶体管 - BJT

供应商器件封装

TO-92-3

其它名称

BC639ZL1G-ND
BC639ZL1GOSTB
BC639ZL1GOSTR
BC639ZL1GOSTR-ND

功率-最大值

625mW

包装

带盒(TB)

发射极-基极电压VEBO

5 V

商标

ON Semiconductor

增益带宽产品fT

200 MHz

安装类型

通孔

安装风格

Through Hole

封装

Ammo Pack

封装/外壳

TO-226-3、TO-92-3(TO-226AA)成形引线

封装/箱体

TO-92-3 (TO-226)

工厂包装数量

2000

晶体管极性

NPN

晶体管类型

NPN

最大功率耗散

625 mW

最大工作温度

+ 150 C

最大直流电集电极电流

1 A

最小工作温度

- 55 C

标准包装

2,000

电压-集射极击穿(最大值)

80V

电流-集电极(Ic)(最大值)

1A

电流-集电极截止(最大值)

-

直流集电极/BaseGainhfeMin

25

系列

BC639

配置

Single

集电极—发射极最大电压VCEO

80 V

集电极—基极电压VCBO

80 V

集电极—射极饱和电压

0.5 V

集电极连续电流

1 A

频率-跃迁

200MHz

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PDF Datasheet 数据手册内容提取

BC637, BC639, BC639-16 High Current Transistors NPN Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS 3 Rating Symbol Value Unit BASE Collector - Emitter Voltage VCEO Vdc BC637 60 1 BC639 80 EMITTER Collector - Base Voltage VCBO Vdc BC637 60 BC639 80 Emitter - Base Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 1.0 Adc TO−92 Total Device Dissipation @ TA = 25°C PD 625 mW CASE 29 Derate above 25°C 5.0 mW/°C STYLE 14 Total Device Dissipation @ TC = 25°C PD 800 mW Derate above 25°C 12 mW/°C 12 1 2 3 3 Operating and Storage Junction TJ, Tstg −55 to +150 °C STRAIGHT LEAD BENT LEAD Temperature Range BULK PACK TAPE & REEL AMMO PACK THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient R(cid:2)JA 200 °C/W MARKING DIAGRAMS Thermal Resistance, Junction−to−Case R(cid:2)JC 83.3 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. BC BC63 63x 9−16 AYWW(cid:2) AYWW(cid:2) (cid:2) (cid:2) x = 7 or 9 A = Assembly Location Y = Year WW = Work Week (cid:2) = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques See detailed ordering and shipping information in the package Reference Manual, SOLDERRM/D. dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2011 1 Publication Order Number: February, 2011 − Rev. 1 BC637/D

BC637, BC639, BC639−16 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (Note 1) V(BR)CEO Vdc (IC = 10 (cid:3)Adc, IB = 0) BC637 60 − − BC639 80 − − Collector − Emitter Zero−Gate Breakdown Voltage(Note 1) V(BR)CES Vdc (IC = 100 (cid:3)Adc, IB = 0) BC639−16 120 − − Collector − Base Breakdown Voltage V(BR)CBO Vdc (IC = 100 (cid:3)Adc, IE = 0) BC637 60 − − BC639 80 − − Emitter − Base Breakdown Voltage V(BR)EBO 5.0 − − Vdc (IE = 10 (cid:3)Adc, IC = 0) Collector Cutoff Current ICBO (VCB = 30 Vdc, IE = 0) − − 100 nAdc (VCB = 30 Vdc, IE = 0, TA = 125°C) − − 10 (cid:3)Adc ON CHARACTERISTICS (Note 1) DC Current Gain hFE − (IC = 5.0 mAdc, VCE = 2.0 Vdc) 25 − − (IC = 150 mAdc, VCE = 2.0 Vdc) BC637 40 − 160 BC639 40 − 160 BC639−16ZLT1 100 − 250 (IC = 500 mA, VCE = 2.0 V) 25 − − Collector − Emitter Saturation Voltage VCE(sat) Vdc (IC = 500 mAdc, IB = 50 mAdc) − − 0.5 Base − Emitter On Voltage VBE(on) Vdc (IC = 500 mAdc, VCE = 2.0 Vdc) − − 1.0 DYNAMIC CHARACTERISTICS Current Gain − Bandwidth Product fT MHz (IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz) − 200 − Output Capacitance Cob pF (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) − 7.0 − Input Capacitance Cib pF (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) − 50 − 1. Pulse Test: Pulse Width ≤ 300 (cid:3)s, Duty Cycle 2.0%. ORDERING INFORMATION Device Package Shipping† BC637G TO−92 5000 Units / Bulk (Pb−Free) BC637RL1G TO−92 2000 / Tape & Reel (Pb−Free) BC639G TO−92 5000 Units / Bulk (Pb−Free) BC639RL1G TO−92 2000 / Tape & Reel (Pb−Free) BC639ZL1G TO−92 2000 / Ammo Box (Pb−Free) BC639−16ZL1G TO−92 2000 / Ammo Box (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2

BC637, BC639, BC639−16 1000 500 500 SOA = 1S VCE = 2 V A) ENT (m 120000 PD TA 25°C GAIN 200 R T R N R CU 50 PD TC 25°C RRE 100 TO 20 CU C C COLLE 150 h, DFE 50 I, C PD TA 25°C BC635 2 PD TC 25°C BBCC663379 1 20 1 2 3 4 5 7 10 20 30 40 50 70 100 1 3 5 10 30 50 100 300 500 1000 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 1. Active Region Safe Operating Area Figure 2. DC Current Gain z) MH 500 1 T ( C RODU 300 0.8 VBE(sat) @ IC/IB = 10 DTH P OLTS) 0.6 VBE(on) @ VCE = 2 V NDWI 100 VCE = 2 V GE (V BA TA — OL 0.4 N V AI 50 V, G T- 0.2 N E RR VCE(sat) @ IC/IB = 10 U C 20 0 (cid:2), T 1 10 100 1000 1 10 100 1000 f IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 3. Current−Gain — Bandwidth Product Figure 4. “Saturation” and “On” Voltages -0.2 C) ° V/ m S ( T N E CI FI -1.0 F E O C E VCE = 2 VOLTS UR (cid:4)T = 0°C to +100°C T A -1.6 R E MP (cid:2)V for VBE E T , V θ -2.2 1 3 5 10 30 50 100 300 500 1000 IC, COLLECTOR CURRENT (mA) Figure 5. Temperature Coefficients http://onsemi.com 3

BC637, BC639, BC639−16 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AM A NOTES: B STRAIGHT LEAD 1. DIMENSIONING AND TOLERANCING PER ANSI BULK PACK Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. R 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND P BEYOND DIMENSION K MINIMUM. L SEATING INCHES MILLIMETERS PLANE K DIM MIN MAX MIN MAX A 0.175 0.205 4.45 5.20 B 0.170 0.210 4.32 5.33 C 0.125 0.165 3.18 4.19 D 0.016 0.021 0.407 0.533 X X D G 0.045 0.055 1.15 1.39 G H 0.095 0.105 2.42 2.66 J 0.015 0.020 0.39 0.50 H J K 0.500 --- 12.70 --- L 0.250 --- 6.35 --- V C N 0.080 0.105 2.04 2.66 P --- 0.100 --- 2.54 SECTION X−X R 0.115 --- 2.93 --- 1 N V 0.135 --- 3.43 --- N R A B BENT LEAD N1O.TEDSIM:ENSIONING AND TOLERANCING PER TAPE & REEL ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. AMMO PACK 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P P AND BEYOND DIMENSION K MINIMUM. T SEATING K MILLIMETERS PLANE DIM MIN MAX A 4.45 5.20 B 4.32 5.33 C 3.18 4.19 X X D GD 02..4400 02..5840 G J 0.39 0.50 J K 12.70 --- N 2.04 2.66 V C P 1.50 4.00 R 2.93 --- SECTION X−X V 3.43 --- 1 N STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5773−3850 Sales Representative http://onsemi.com BC637/D 4