Low Frequency Transistor (20V, 3A) 2SD2150 (cid:122)Features (cid:122)Dimensions(Unit : mm) 1) Low VCE(sat). VCE(sat) = 0.2V(Typ.) 2SD2150 2) （ExIcCe /l lIeBn =t c2uAr r/e 0n.t1 gAa）in characteristics. ±0.50.1 14..65±+−000...121 1.5−+00..12 3) Complements the 2SB1424. ±4.00.3+0.22.5−0.1 (1) (2) (3) 0.4−+00..015 (cid:122)EpSittaruxciatlu prlea nar type ±1.00.210..54±±00..11 0.5±0.1 01..45±±00..11 3.0±0.2 NPN silicon transistor (1) Base ROHM : MPT3 (2) Collector (cid:122)Absolute maximum ratings (Ta=25°C) EIAJ : SC-62 (3) Emitter ∗ Abbreviated symbol: CF Parameter Symbol Limits Unit Collector-base voltage VCBO 40 V ∗ Denotes hFE Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 6 V 3 A (DC) Collector current IC 5 A (Pulse) ∗1 0.5 W Collector power dissipation PC 2 W ∗2 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ∗1 Single pulse Pw=10ms ∗2 Mounted on a 40×40×0.7mm Ceramic substrate. (cid:122)Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 40 − − V IC=50µA Collector-emitter breakdown voltage BVCEO 20 − − V IC=1mA Emitter-base breakdown voltage BVEBO 6 − − V IE=50µA Collector cutoff current ICBO − − 0.1 µA VCB=30V Emitter cutoff current IEBO − − 0.1 µA VEB=5V Collector-emitter saturation voltage VCE(sat) − 0.2 0.5 V IC/IB=2A/0.1A ∗ DC current transfer ratio hFE 120 − 560 − VCE=2V, IC=0.1A Transition frequency fT − 290 − MHz VCE=2V, IE= −0.5A, f=100MHz Output capacitance Cob − 25 − pF VCE=10V, IE=0A, f=1MHz ∗ Measured using pulse current. www.rohm.com 1/2 2009.11 - Rev.B ○c 2009 ROHM Co., Ltd. All rights reserved.

2SD2150 Data Sheet (cid:122)Packaging specifications and hFE Package Taping Code T100 Basic ordering 1000 Type hFE unit (pieces) 2SD2150 RS hFE values are classified as follows : Item R S hFE 180 to 390 270 to 560 (cid:122)Electrical characteristic curves (A)RRENT : IC 001..025125 Ta= 1−240500°°°CCC VCE=2V (A)RRENT : IC 11..262 21110864mmmmAAAA 12mA10mATa=2865mm°CAA (A)RRENT : IC 345 445500mmmAAA 35m3A0mATa2=5212m055mmA°CAA CU 0.1 CU 4mA CU 10mA OR 0.05 OR 0.8 OR 2 LECT00..0012 LECT 2mA LECT 5mA OL 5m OL 0.4 OL 1 C C C 2m 1m 0 IB=0A 0 IB=0A 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0.2 0.4 0.6 0.8 1.0 0 1 2 3 4 5 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation Fig.2 Grounded emitter output Fig.3 Grounded emitter output characteristics characteristics ( ) characteristics ( ) T GAIN : hFE125250000000000000 Ta= 1−240500°°°CCC VCE=2V (V)N VOLTAGE : VCE(sat) 000...21251 Ta=12050°°CC IC/IB=10 (V)N VOLTAGE : VCE(sat) 0.0000...51251 lC/lB=20 Ta=−1 402005°°°CCC REN 100 ATIO50m −40°C ATIO0.02 R R R DC CU 2500 OR SATU1200mm OR SATU0.50m1 T T 10 EC 5m EC 2m 5 OLL 2m OLL 1m 1m2m5m0.010.020.050.10.2 0.5 1 2 5 10 C 1m2m5m10m20m50m0.10.2 0.51 2 5 10 C 1m2m5m0.010.020.050.10.2 0.5 1 2 5 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. Fig.5 Collector-emitter Fig.6 Collector-emitter collector current saturation voltage vs. saturation voltage vs. collector current ( ) collector curren ( ) (V)COLLECTOR SATURATION VOLTAGE : VCE(sat) 12500025000...mmmmm212511m2m5m10mTa2=01m−02450500°°°mCCC0.10.2 0.51IC2/IB=55010 TRANSITION FREQUENCY : f(MHz)T 1052121000050052100000−1 −2 −5−10−20 −50−100−20TV0aC−E=5=20250V°−C1000 (pF)COLLECTOR OUTPUT CAPACITANCE : Cob (pF)EMITTER INPUT CAPACITANCE : Cib 11250125000000000000.1 0.2 0.5 1CCoobb2 5 10TfII=ECa==12=00M02AAH5°zC50 COLLECTOR CURRENT : IC (A) EMITTER CURRENT : IE (mA) COELMLIETTCETRO R T OT O B ABSAES E V OVLOTLATGAEG E: V : EVB C(BV ()V) Fig.7 Collector-emitter Fig.8 Gain bandwidth product vs. Fig.9 Collector output capacitance vs. saturation voltage vs. emitter current collector-base voltage collector current ( ) Emitter input capacitance vs. emitter-base voltage www.rohm.com 2/2 2009.11 - Rev.B ○c 2009 ROHM Co., Ltd. All rights reserved.

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