SPP06N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS • New revolutionary high voltage technology R @T = 25°C 0.9 W DS(on)max j • Extreme dv/dt rated Q 31 nC g,typ • High peak current capability • Qualified according to JEDEC1) for target applications PG-TO220-3 • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitances CoolMOSTM 800V designed for: • Industrial application with high DC bulk voltage • Switching Application ( i.e. active clamp forward ) Type Package Marking SPP06N80C3 PG-TO220-3 06N80C3 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit Continuous drain current I T =25 °C 6 A D C T =100 °C 3.8 C Pulsed drain current2) ID,pulse TC=25 °C 18 Avalanche energy, single pulse E I =1.2 A, V =50 V 230 mJ AS D DD Avalanche energy, repetitive t 2),3) E I =6 A, V =50 V 0.2 AR AR D DD Avalanche current, repetitive t 2),3) I 6 A AR AR MOSFET dv/dt ruggedness dv/dt V =0…640 V 50 V/ns DS Gate source voltage V static ±20 V GS AC (f>1 Hz) ±30 Power dissipation P T =25 °C 83 W tot C Operating and storage temperature T , T -55 ... 150 °C j stg Mounting torque M3 and M3.5 screws 60 Ncm Rev. 2.91 page 1 2011-09-28

SPP06N80C3 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit Continuous diode forward current I 6 A S T =25 °C C Diode pulse current2) IS,pulse 18 Reverse diode dv/dt4) dv/dt 4 V/ns Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R - - 1.5 K/W thJC Thermal resistance, junction - R leaded - - 62 ambient thJA Soldering temperature, 1.6 mm (0.063 in.) T - - 260 °C wave soldering only allowed at leads s o l d f r o m c ase for 10s Electrical characteristics, at T =25 °C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0 V, I =250 µA 800 - - V (BR)DSS GS D Avalanche breakdown voltage V V =0 V, I =6 A - 870 - (BR)DS GS D Gate threshold voltage V V =V , I =0.25 mA 2.1 3 3.9 GS(th) DS GS D V =800 V, V =0 V, Zero gate voltage drain current I DS GS - - 10 µA DSS T =25 °C j V =800 V, V =0 V, DS GS - 50 - T =150 °C j Gate-source leakage current I V =20 V, V =0 V - - 100 nA GSS GS DS V =10 V, I =3.8 A, Drain-source on-state resistance R GS D - 0.78 0.9 W DS(on) T =25 °C j V =10 V, I =3.8 A, GS D - 2.1 - T =150 °C j Gate resistance R f=1 MHz, open drain - 1.2 - W G Rev. 2.91 page 2 2011-09-28

SPP06N80C3 Parameter Symbol Conditions Values Unit min. typ. max. Dynamic characteristics Input capacitance C - 785 - pF iss V =0 V, V =100 V, GS DS f=1 MHz Output capacitance C - 33 - oss Effective output capacitance, energy C - 26 - related5) o(er) V =0 V, V =0 V GS DS to 480 V Effective output capacitance, time C - 69 - related6) o(tr) Turn-on delay time t - 25 - ns d(on) V =400 V, Rise time t DD - 15 - r V =0/10 V, I =6 A, GS D Turn-off delay time td(off) RG=15 ?, Tj=25 °C - 72 - Fall time t - 8 - f Gate Charge Characteristics Gate to source charge Q - 4 - nC gs Gate to drain charge Qgd V =640 V, I =6 A, - 15 - DD D V =0 to 10 V Gate charge total Q GS - 31 41 g Gate plateau voltage V - 5.5 - V plateau Reverse Diode V =0 V, I =I =6 A, Diode forward voltage V GS F S - 1 1.2 V SD T =25 °C j Reverse recovery time t - 520 - ns rr V =400 V, I =I =6 A, Reverse recovery charge Q R F S - 5 - µC rr di /dt=100 A/µs F Peak reverse recovery current I - 18 - A rrm 1) J-STD20 and JESD22 2) Pulse width t limited by T p j,max 3) Repetitive avalanche causes additional power losses that can be calculated as P =E *f. AV AR 4) I =I , di/dt=400A/µs, V = 400V, V <V , T<T , identical low side and high side switch SD D DClink peak (BR)DSS j jmax 5) C is a fixed capacitance that gives the same stored energy as C while V is rising from 0 to 80% V o(er) oss DS DSS. 6) C is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V o(tr) oss DS DSS. Rev. 2.91 page 3 2011-09-28

SPP06N80C3 1 Power dissipation 2 Safe operating area P =f(T ) I =f(V ); T =25 °C; D=0 tot C D DS C parameter: t p 90 102 limited by on-state resistance 80 70 60 101 1 µs 10 µs W] 50 A] [ot [D 100 µs Pt 40 I 1 ms 30 100 DC 10 ms 20 10 0 10-1 0 25 50 75 100 125 150 1 10 100 1000 T [°C] V [V] C DS 3 Max. transient thermal impedance 4 Typ. output characteristics Z =f(t ) I =f(V ); T =25 °C; t =10 µs thJC P D DS j p parameter: D=t /T parameter: V p GS 101 20 20 V 15 100 10 V 0.5 ] W K/ 0.2 A] [hJC 0.1 [ID 10 6 V t Z 0.05 0.02 10-1 5.5 V 0.01 5 single pulse 5 V 4.5 V 10-2 0 10-5 10-4 10-3 10-2 10-1 0 5 10 15 20 25 t [s] V [V] p DS Rev. 2.91 page 4 2011-09-28

SPP06N80C3 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I =f(V ); T =150 °C; t =10 µs R =f(I ); T =150 °C D DS j p DS(on) D j parameter: V parameter: V GS GS 12 4.2 20 V 3.8 10 V 9 6 V 3.4 ]W 3 [A]D 6 5.5 V [S(on) I RD 2.6 5 V 5.5 V 6 V 4.5 V 10 V 5 V 2.2 20 V 3 4.5 V 1.8 0 1.4 0 5 10 15 20 25 0 3 6 9 V [V] I [A] DS D 7 Drain-source on-state resistance 8 Typ. transfer characteristics R =f(T ); I =3.8 A; V =10 V I =f(V ); |V |>2|I |R ; t =10 µs DS(on) j D GS D GS DS D DS(on)max p parameter: T j 2.4 20 25 °C 2 15 1.6 ] W [ S(on) 1.2 98 % [A]D 10 150 °C D I R typ 0.8 5 0.4 0 0 -60 -20 20 60 100 140 180 0 2 4 6 8 10 T [°C] V [V] j GS Rev. 2.91 page 5 2011-09-28

SPP06N80C3 9 Typ. gate charge 10 Forward characteristics of reverse diode V =f(Q ); I =6 A pulsed I =f(V ); ; t =10 µs GS gate D F SD p parameter: V parameter: T DD j 10 102 150°C (98%) 8 160 V 25 °C 25°C (98°C) 640 V 101 6 150 °C V] A] [ GS [F V I 4 100 2 0 10-1 0 10 20 30 40 0 0.5 1 1.5 2 Q [nC] V [V] gate SD 11 Avalanche energy 12 Drain-source breakdown voltage E =f(T ); I =1.2 A; V =50 V V =f(T ); I =0.25 mA AS j D DD BR(DSS) j D 250 960 920 200 880 150 ] V] 840 J [ m S) [ S AS R(D E B 800 100 V 760 50 720 0 680 25 50 75 100 125 150 -60 -20 20 60 100 140 180 T [°C] T [°C] j j Rev. 2.91 page 6 2011-09-28

SPP06N80C3 13 Typ. capacitances 14 Typ. Coss stored energy C=f(V ); V =0 V; f=1 MHz E =f(V ) DS GS oss DS 104 6 5 103 Ciss 4 ] F] µJ [p 102 [s 3 s C o E Coss 2 101 1 Crss 100 0 0 100 200 300 400 500 600 700 800 0 100 200 300 400 500 600 700 800 V [V] V [V] DS DS Rev. 2.91 page 7 2011-09-28

SPP06N80C3 Definition of diode switching characteristics Rev. 2.91 page 8 2011-09-28

SPP06N80C3 PG-TO220-3: Outline Rev. 2.91 page 9 2011-09-28

SPP06N80C3 Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.91 page 10 2011-09-28

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