SE1470 AlGaAs Infrared Emitting Diode FEATURES • Compact metal can coaxial package • 24¡ (nominal) beam angle • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents • Wide operating temperature range ( 55¡C to +125¡C) • Mechanically and spectrally matched to SD1420 photodiode, SD1440 phototransistor and SD1410 photodarlington INFRA-63.TIF DESCRIPTION OUTLINE DIMENSIONSin inches (mm) The SE1470 is a high intensity aluminum gallium Tolerance 3 plc decimals ±0.005(0.12) arsenide infrared emitting diode mounted in a glass 2 plc decimals ±0.020(0.51) lensed metal can coaxial package. The package may have a tab or second lead welded to the can as an optional feature (SE1470-XXXL). Both leads are flexible SE1470-XXX and may be formed as required to fit various mounting .091(2.26) configurations. These devices typically exhibit 70% CATHODE (CASE) greater power intensity than gallium arsenide devices at ANODE the same forward current. .020(0.51) DIA .062(1.57) DIA ..007769((12..9031)) DIA .010(0.25) .095(2.41)DIA .122(3.10) .106(2.69) 1.000(25.40) MIN DIM_001a.ds4 SE1470-XXXL .091(2.26) .020 (0.51)DIA CATHODE ~~ ANODE ~~ .020 .062(1.57) DIA ~~ (0.51)DIA ..007769((12..9031)) DIA .010(0.25) .095(2.41) .122(3.10) .106(2.69) 1.000(25.40) TYPICAL MIN DIM_001b.ds4 h Honeywell reserves the right to make 12 changes in order to improve design and supply the best products possible.

SE1470 AlGaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS ABSOLUTE MAXIMUM RATINGS SCHEMATIC (25¡C Free-Air Temperature unless otherwise noted) Continuous Forward Current 50 mA Power Dissipation 75 mW [À] Operating Temperature Range -55¡C to 125¡C Storage Temperature Range -65¡C to 150¡C Soldering Temperature (10 sec) 260¡C Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.71 mW/¡C. Honeywell reserves the right to make h changes in order to improve design and 13 supply the best products possible.

SE1470 AlGaAs Infrared Emitting Diode Fig. 1 Radiant Intensity vs Fig. 2 Radiant Intensity vs Angular Displacement gra_007.ds4 Forward Current gra_008.ds4 1.0 y 1.0 0.9 its 0.9 n liiit tt vsyeaenenR 0000000.......2345678 liii rt tzaedadannem 0000000.......2345678 0.1 ro 0.1 N 0.0 0.0 -40 -30 -20 -10 0 +10 +20 +30 +40 0.0 4.0 8.0 12.0 16.0 20.0 Angular displacement - degrees Forward current - mA Fig. 3 Forward Voltage vs Fig. 4 Forward Voltage vs Forward Current gra_201.ds4 Temperature gra_202.ds4 1.6 1.6 V 1.5 V 1.5 -ge 1.4 -ge 1.4 a a ltvo 1.3 ltvo 1.3 d d raw 1.2 raw 1.2 IF = 20 mA ro ro F 1.1 F 1.1 1.0 1.0 0 10 20 30 40 50 -50 -25 0 25 50 75 100 125 Forward current - mA Temperature - °C Fig. 5 Spectral Bandwidth Fig. 6 Coupling Characteristics gra_011.ds4 with SD1440 gra_012.ds4 1.0 1.0 0.9 t n itt synen 000...678 t rrcghue 00..68 liit veae 000...345 lili zaed 0.4 R 0.2 rom 0.2 0.1 N 0.0 0.0 760 800 840 880 920 960 1000 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Wavelength - nm Lens-to-lens seperation - inches h Honeywell reserves the right to make 14 changes in order to improve design and supply the best products possible.

SE1470 AlGaAs Infrared Emitting Diode Fig. 7 Relative Power Output vs Free Air Temperature gra_130.ds4 10 tu 5.0 p tou 2.0 IF = 40 mA r poew 1.0 IF =IF 3 =0 2m0A mA e 0.5 v ita IF = 10 mA le 0.2 R 0.1 -50 -25 0 +25 +50 +75 +100 T - Free-air temperature - (°C) A All Performance Curves Show Typical Values Honeywell reserves the right to make h changes in order to improve design and 15 supply the best products possible.