SBR2045CT TechnicalData DataSheetN0897,Rev.A SBR2045CT SCHOTTKY RECTIFIER Features  150CTJoperation  Centertapconfiguration  Lowforwardvoltagedrop  Highpurity,hightemperatureepoxyencapsulationfor enhanced  mechanicalstrengthandmoistureresistance  Highfrequencyoperation LKLLKJHYJ,  Guardringforenhancedruggednessandlongterm reliability TO-220AB  ThisisaPb−FreeDevice  AllSMCpartsaretraceabletothewaferlot  Additionaltestingcanbeoffereduponrequest Circuit Diagram Applications  Switchingpowersupply  Converters  Free-Wheelingdiodes  Reversebatteryprotection Maximum Ratings: Characteristics Symbol Condition Max. Units PeakRepetitiveReverseVoltage VRRM - WorkingPeakReverseVoltage VRWM 45 V DCBlockingVoltage VR 50%dutycycle@Tc=135°C, 10(PerLeg) AverageRectifiedForwardCurrent IF(AV) rectangularwaveform 20(PerDevice) A PeakOneCycleNon-RepetitiveSurge Current(PerLeg) IFSM 8.3ms,HalfSinepulse,TC=25C 150 A Electrical Characteristics: Characteristics Symbol Condition Typ. Max. Units ForwardVoltageDrop(PerLeg)* VF1 @10A,Pulse,TJ=25C 0.59 0.75 V VF2 @10A,Pulse,TJ=125C 0.55 0.65 V ReverseCurrent(PerLeg)* IR1 @VR=ratedVR,TJ=25C 0.05 1.0 mA IR2 @VR=ratedVR,TJ=125C 6 15.0 mA JunctionCapacitance(PerLeg) CT @VR=5V,TC=25C,fSIG=1MHz 240 300 pF Repetitivepeakreversecurrent IRRM tp=2μssquareF=1kHz - 1 A Non-RepetitiveAvalanche TJ=25C,IAS=2A, Energy EAS L=1mH - 2 mJ SeriesInductance(PerLeg) LS Measuredleadtolead5mmfrom 8.0 - nH packagebody VoltageRateofChange dv/dt - - 10,000 V/s * Pulsewidth<300µs, dutycycle<2%  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com 

SBR2045CT TechnicalData DataSheetN0897,Rev.A Thermal-Mechanical Specifications: Characteristics Symbol Condition Specification Units JunctionTemperature TJ - -55to+150 C StorageTemperature Tstg - -55to+150 C TypicalThermalResistanceJunctionto Case(PerLeg) RJC DCoperation 5 C/W ApproximateWeight wt - 2 g Ratings and Characteristics Curves 100 TJ=125℃ 10 A) M TJ=25℃ R( 1 nt-I e urr 0.1 C TJ=25℃ e s ver 0.01 e R 0.001 10 20 30 40 50 60 70 80 90 100 Reverse Voltage-VR(%) Fig.1-TypicalJunctionCapacitance Fig.2-TypicalReverseCharacteristics A) ( F100 t-I n e r r u C d r wa TJ=125℃ or 10 TJ=25℃ F s u o e n a t n a st 1 n I 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 Forward Voltage Drop-VF(V) Fig.3-TypicalInstantaneousForwardVoltageCharacteristics  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com 

SBR2045CT TechnicalData DataSheetN0897,Rev.A Mechanical Dimensions TO-220AB Dimensionsin Symbol millimeters Min Typical Max A 4.42 4.57 4.72 A1 1.17 1.27 1.37 A2 2.52 2.69 2.89 b 0.71 0.81 0.96 b1 1.17 1.27 1.37 c 0.31 0.38 0.61 D 14.94 15.24 15.54 D1 8.85 9.00 9.15 E 10.01 10.16 10.31 e 2.54 e1 4.98 5.06 5.18 H1 6.04 6.24 6.44 L 12.7 13.56 13.80 L1 3.56 3.5 3.96 ΦP 3.74 3.84 4.04 Q 2.54 2.74 2.94 Θ1 7° Θ2 3° Θ3 4° Tube Specification Marking Diagram WhereXXXXXisYYWWL SBR =DeviceType 20 =ForwardCurrent(20A) 45 =ReverseVoltage(45V) CT =Configuration SSG =SSG YY =Year WW =Week L =LotNumber Cautions：Moldingresin EpoxyresinUL:94V-0 Ordering Information Device Package Shipping SBR2045CT TO-220AB(Pb-Free) 50pcs/tube Forinformationontapeandreelspecifications,includingpartorientationandtapesizes,pleaserefertoourtapeandreelpackaging specification.  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com 

SBR2045CT TechnicalData DataSheetN0897,Rev.A DISCLAIMER: 1-Theinformationgivenherein,includingthespecificationsanddimensions,issubjecttochangewithoutpriornoticetoimproveproduct characteristics.Beforeordering,purchasersareadvisedtocontacttheSMC-SangdestMicroelectronics(Nanjing)Co.,Ltdsales departmentforthelatestversionofthedatasheet(s). 2-Incaseswhereextremelyhighreliabilityisrequired(suchasuseinnuclearpowercontrol,aerospaceandaviation,trafficequipment, medicalequipment,andsafetyequipment),safetyshouldbeensuredbyusingsemiconductordevicesthatfeatureassuredsafetyorby meansofusers’fail-safeprecautionsorotherarrangement. 3-InnoeventshallSMC-SangdestMicroelectronics(Nanjing)Co.,Ltdbeliableforanydamagesthatmayresultfromanaccidentor anyothercauseduringoperationoftheuser’sunitsaccordingtothedatasheet(s).SMC-SangdestMicroelectronics(Nanjing)Co.,Ltd assumesnoresponsibilityforanyintellectualpropertyclaimsoranyotherproblemsthatmayresultfromapplicationsofinformation, productsorcircuitsdescribedinthedatasheets. 4-InnoeventshallSMC-SangdestMicroelectronics(Nanjing)Co.,Ltdbeliableforanyfailureinasemiconductordeviceorany secondarydamageresultingfromuseatavalueexceedingtheabsolutemaximumrating. 5-Nolicenseisgrantedbythedatasheet(s)underanypatentsorotherrightsofanythirdpartyorSMC-SangdestMicroelectronics (Nanjing)Co.,Ltd. 6-Thedatasheet(s)maynotbereproducedorduplicated,inanyform,inwholeorpart,withouttheexpressedwrittenpermissionofSMC -SangdestMicroelectronics(Nanjing)Co.,Ltd. 7-Theproducts(technologies)describedinthedatasheet(s)arenottobeprovidedtoanypartywhosepurposeintheirapplicationwill hindermaintenanceofinternationalpeaceandsafetynoraretheytobeappliedtothatpurposebytheirdirectpurchasersoranythird party.Whenexportingtheseproducts(technologies),thenecessaryproceduresaretobetakeninaccordancewithrelatedlawsand regulations..  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com 