C4D40120D V = 1200 V Silicon Carbide Schottky Diode RRM I (T=135˚C)  =    54A** Z-Rec® Rectifier F C Q = 198nC** c Features Package • 1.2kV Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching • Extremely Fast Switching Benefits TO-247-3 • Replace Bipolar with Unipolar Rectifiers • Essentially No Switching Losses • Higher Efficiency • Reduction of Heat Sink Requirements • Parallel Devices Without Thermal Runaway Applications Part Number Package Marking • Switch Mode Power Supplies (SMPS) • Boost diodes in PFC or DC/DC stages • Free Wheeling Diodes in Inverter stages C4D40120D TO-247-3 C4D40120 • AC/DC converters Maximum Ratings (T =25°C unless otherwise specified) C Symbol Parameter Value Unit Test Conditions Note V Repetitive Peak Reverse Voltage 1200 V RRM V Surge Peak Reverse Voltage 1300 V RSM V DC Peak Reverse Voltage 1200 V R 56.5/113 T=25˚C Continuous Forward Current C I 27/54 A T=135˚C Fig. 3 F (Per Leg/Device) C 20/40 T=150˚C C 91* T=25˚C, t=10 ms, Half Sine Pulse I Repetitive Peak Forward Surge Current A C P FRM 61* T=110˚C, t=10 ms, Half Sine Pulse C P 130* T=25˚C, t=10 ms, Half Sine Pulse I Non-Repetitive Forward Surge Current A C P Fig. 8 FSM 110* T=110˚C, t=10 ms, Half Sine Pulse C P 1150* T=25˚C, t=10 ms, Pulse I Non-Repetitive Peak Forward Current A C P Fig. 8 F,Max 950* T=110˚C, t=10 ms, Pulse C P 266/532 T=25˚C P Power Dissipation (Per Leg/Device) W C Fig. 4 tot 114/228 T=110˚C C dV/dt Diode dV/dt ruggedness 200 V/ns V =0-960V R 84.5* T=25˚C, t=10 ms ∫i2dt i2t value A2s C P 60.5* T=110˚C, t=10 ms C P -55 to T Operating Junction Range ˚C J +175 -55 to T Storage Temperature Range ˚C stg +135 1 Nm M3 Screw TO-247 Mounting Torque 8.8 lbf-in 6-32 Screw * Per Leg, ** Per Device 1 C4D40120D Rev. G, 09-2016

Electrical Characteristics (Per Leg) Symbol Parameter Typ. Max. Unit Test Conditions Note 1.5 1.8 I = 20 A T=25°C V Forward Voltage V F J Fig. 1 F 2.2 3 I = 20 A T=175°C F J 35 200 V = 1200 V T=25°C I Reverse Current μA R J Fig. 2 R 65 400 V = 1200 V T=175°C R J V = 800 V, I = 20A R F Q Total Capacitive Charge 99 nC di/dt = 200 A/μs Fig. 5 C T = 25°C J 1500 V = 0 V, T = 25°C, f = 1 MHz R J C Total Capacitance 93 pF V = 400 V, T = 25˚C, f = 1 MHz Fig. 6 R J 67 V = 800 V, T = 25˚C, f = 1 MHz R J E Capacitance Stored Energy 28 μJ V = 800 V Fig. 7 C R Note: This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol Parameter Typ. Unit Note 0.29** R Thermal Resistance from Junction to Case °C/W Fig. 9 θJC 0.57* * Per Leg, ** Per Device Typical Performance (Per Leg) 40 1 35 TTTJJ=== -275555°°°CCC 0.9 TJ =125°C 0.8 J 30 T =175°C J 0.7 25 0.6 ) ) A A m ( 20 0.5 ( IF R I 0.4 15 0.3 TJ=-55°C 10 TTJ== 2755°°CC 0.2 TJJ =125°C T =175°C J 5 0.1 0 0 0 1 2 3 4 0 500 1000 1500 V (V) V (V) F R Figure 1. Forward Characteristics Figure 2. Reverse Characteristics 2 C4D40120D Rev. G, 09-2016

Typical Performance (Per Leg) 200 300.0 180 250.0 160 10% Duty 20% Duty 140 30% Duty 50% Duty 200.0 70% Duty ) 120 DC A ) ( W eak) 100 (ot 150.0 p T ( P IF 8800 100.0 60 40 50.0 20 0 0.0 25 50 75 100 125 150 175 25 50 75 100 125 150 175 T ˚C T ˚C C C Figure 3. Current Derating Figure 4. Power Derating 140 1600 120 1400 1200 100 1000 C) 80 F) (n (p 800 Q c 60 C 600 40 400 20 200 0 0 0 200 400 600 800 1000 1200 0.1 1 10 100 1000 V (V) V (V) R R Figure 5. Recovery Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage 3 C4D40120D Rev. G, 09-2016

Typical Performance 550.00 1100000000 445.50 440.00 J)J)335.50 uu 11000000 y (y ( J)nergnerg330.00 A)A) mE(citive Ecitive EC225.50 I(FSMI (FSM papa220.00 CaECaC115.50 110000 TTJJ__iinniittiiaall == 2151°0C°C 110.00 5.50 0.00 1100 00 220000 440000 660000 880000 11000000 11.EE-0-505 1E1.-E0-044 1E1.-E0-033 1E1-.0E-202 V Reverse Voltage (V) tp(s) R V (V) t (s) R p Figure 7. Typical Capacitance Stored Energy, per leg Figure 8. Non-Repetitive Peak Forward Surge Current versus Pulse Duration (sinusoidal waveform), per leg W) 0.5 C/W)100E-3 o (/ 0.3 ZZ˚CthJC e, e, e ( 0.1 cc nnc aan dda 10E-3 0.05 eet pps mmi s 0.02 e Ie IRe asas 0.01 SinglePulse CCal o o m n Tn Tr 1E-3 ooe ctictiTh nn uu JJ 100E-6 1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1 Time, t (s) T (Spec) Figure 9. Device Transient Thermal Impedance 4 C4D40120D Rev. G, 09-2016

Package Dimensions PACKAGE DWG NO. 98WHP03165A Inches Millimeters PackagAe TSOE-24A7dv-anc3ed POS SEenmgiincoenerdiuncgtoWreihai, Inc. OUTLINE ISSUE O Min Max Min Max DATE Sep.05, 2016 A .190 .205 4.83 5.21 A1 .090 .100 2.29 2.54 A2 .075 .085 1.91 2.16 b .042 .052 1.07 1.33 b1 .075 .095 1.91 2.41 b3 .113 .133 2.87 3.38 c .022 .027 0.55 0.68 D .819 .831 20.80 21.10 D1 .640 .695 16.25 17.65 D2 .037 .049 0.95 1.25 E .620 .635 15.75 16.13 E1 .516 .557 13.10 14.15 E2 .145 .201 3.68 5.10 E3 .039 .075 1.00 1.90 E4 .487 .529 12.38 13.43 e e .214 BSC 5.44 BSC L .780 .800 19.81 20.32 L1 .161 .173 4.10 4.40 N 3 ØP .138 .144 3.51 3.65 Q .216 .236 5.49 6.00 NOTE ; 1. ALL METAL SURFACES: TIN PLATED,EXCEPT AREA OF CUT S .238 .248 6.04 6.30 2. DIMENSIONING & TOLERANCEING CONFIRM TO ASME Y14.5M-1994. 3. ALL DIMENSIONS ARE IN MILLIMETERS. T 17.5° REF ANGLES ARE IN DEGREES. 4. THIS DRAWING WILL MEET ALL DIMENSIONS REQUIREMENT OF JEDEC outlines TO-247 AD. W 3.5° REF 1 - GATE X 4° REF 2 - DRAIN (COLLECTOR) 3 - SOURCE (EMITTER) 4 - DRAIN (COLLECTOR) TITLE: COMPANY ASEWeihai TO-2473LD, Only For Cree SHEET 1 OF 3 Recommended Solder Pad Layout Part Number Package Marking C4D40120D TO-247-3 C4D40120 all units are in inches TO-247-3 Note: Recommended soldering profiles can be found in the applications note here: http://www.wolfspeed.com/power_app_notes/soldering 5 C4D40120D Rev. G, 09-2016

Diode Model Diode Model CSD04060 V fV == V V+ +IfI*fR*R TfT T T T T VVTT == 0 .096.95 7++ (T(Tj *J* - 1-.13*.4100-3*)1 0-3) RRTT == 0 .009.06 2+3 (+Tj( *T 1J*.0 62*.1701-3*) 10-4) Note: T = Diode Junction Temperature In Degrees Celsius, j valid from 25°C to 175°C V R T T Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Wolfspeed representative or from the Product Ecology section of our website at http:// www.wolfspeed.com/power/tools-and-support/product-ecology. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi- cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Related Links • Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes • Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2 • SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i Copyright © 2016 Cree, Inc. All rights reserved. Cree, Inc. 4600 Silicon Drive The information in this document is subject to change without notice. Durham, NC 27703 USA Tel: +1.919.313.5300 Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Fax: +1.919.313.5451 www.cree.com/power 66 C4D40120D Rev. G, 09-2016

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