Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia

PBHV8115T 150 V, 1 A NPN high-voltage low V (BISS) transistor CEsat Rev. 02 — 9 December 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low V Breakthrough In Small Signal (BISS) transistor in a small CEsat SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9115T. 1.2 Features n High voltage n Low collector-emitter saturation voltage V CEsat n High collector current capability I and I C CM n High collector current gain (h ) at high I FE C n AEC-Q101 qualified n Small SMD plastic package 1.3 Applications n LED driver for LED chain module n LCD backlighting n High Intensity Discharge(HID) front lighting n Automotive motor management n Hook switch for wired telecom n Switch Mode Power Supply(SMPS) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 150 V CEO I collector current - - 1 A C h DCcurrent gain V =10V; 100 250 - FE CE I =50mA C

PBHV8115T NXP Semiconductors 150 V, 1 A NPN high-voltage low V (BISS) transistor CEsat 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 base 3 3 2 emitter 3 collector 1 1 2 2 sym021 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PBHV8115T - plastic surface-mounted package; 3leads SOT23 4. Marking Table 4. Marking codes Type number Marking code[1] PBHV8115T W6* [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China PBHV8115T_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 9 December 2008 2 of 12

PBHV8115T NXP Semiconductors 150 V, 1 A NPN high-voltage low V (BISS) transistor CEsat 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 400 V CBO V collector-emitter voltage open base - 150 V CEO V emitter-base voltage open collector - 6 V EBO I collector current - 1 A C I peak collector current single pulse; - 2 A CM t £ 1ms p I peak base current single pulse; - 400 mA BM t £ 1ms p P total power dissipation T £ 25(cid:176) C [1] - 300 mW tot amb T junction temperature - 150 (cid:176) C j T ambient temperature - 55 +150 (cid:176) C amb T storage temperature - 65 +150 (cid:176) C stg [1] Device mounted on an FR4Printed-Circuit Board(PCB), single-sided copper, tin-plated and standard footprint. 006aab150 400 Ptot (mW) 300 200 100 0 - 75 - 25 25 75 125 175 Tamb ((cid:176)C) FR4PCB, standard footprint Fig 1. Power derating curve PBHV8115T_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 9 December 2008 3 of 12

PBHV8115T NXP Semiconductors 150 V, 1 A NPN high-voltage low V (BISS) transistor CEsat 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance from in free air [1] - - 417 K/W th(j-a) junction to ambient R thermal resistance from - - 70 K/W th(j-sp) junction to solder point [1] Device mounted on an FR4PCB, single-sided copper, tin-plated and standard footprint. 103 006aab151 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 102 0.2 0.1 0.05 10 0.02 0.01 0 1 10- 1 10- 5 10- 4 10- 3 10- 2 10- 1 1 10 102 103 tp (s) FR4PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBHV8115T_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 9 December 2008 4 of 12

PBHV8115T NXP Semiconductors 150 V, 1 A NPN high-voltage low V (BISS) transistor CEsat 7. Characteristics Table 7. Characteristics T =25(cid:176) C unless otherwise specified. amb Symbol Parameter Conditions Min Typ Max Unit I collector-base cut-off V =120V; I =0A - - 100 nA CBO CB E current V =120V; I =0A; - - 10 m A CB E T =150(cid:176) C j I collector-emittercut-off V =120V; V =0V - - 100 nA CES CE BE current I emitter-base cut-off V =4V; I =0A - - 100 nA EBO EB C current h DCcurrent gain V =10V FE CE I =50mA 100 250 - C I =100mA 100 250 - C I =0.5A [1] 50 160 - C I =1A [1] 10 30 - C V collector-emitter I =100mA; I =10mA - 40 60 mV CEsat C B saturation voltage I =100mA; I =20mA - 33 50 mV C B I =1A; I =200mA [1] - 225 350 mV C B V base-emittersaturation I =1A; I =200mA [1] - 1.1 1.2 V BEsat C B voltage f transition frequency V =10V; I =10mA; - 30 - MHz T CE E f=100MHz C collector capacitance V =20V; I =i =0A; - 5.7 - pF c CB E e f=1MHz C emitter capacitance V =0.5V; I =i =0A; - 150 - pF e EB C c f=1MHz t delay time V =6V; I =0.5A; - 7 - ns d CC C I =0.1A; I =- 0.1A t rise time Bon Boff - 565 - ns r t turn-on time - 572 - ns on t storage time - 1530 - ns s t fall time - 700 - ns f t turn-off time - 2230 - ns off [1] Pulse test: t £ 300m s;d£ 0.02. p PBHV8115T_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 9 December 2008 5 of 12

PBHV8115T NXP Semiconductors 150 V, 1 A NPN high-voltage low V (BISS) transistor CEsat 006aab158 006aab159 500 2.0 IB (mA) = 300 hFE IC 270 (A) 240 400 1.6 210 180 (1) 150 120 300 1.2 90 (2) 60 200 0.8 30 (3) 100 0.4 0 0 10- 1 1 10 102 103 104 0 1 2 3 4 5 IC (mA) VCE (V) V =10V T =25(cid:176) C CE amb (1) T =100(cid:176) C amb (2) T =25(cid:176) C amb (3) T =- 55(cid:176) C amb Fig 3. DCcurrent gain as a function of collector Fig 4. Collector current as a function of current; typical values collector-emitter voltage; typical values 006aab160 006aab161 1.2 1.3 VBE VBEsat (V) (V) (1) 0.8 0.9 (1) (2) (2) (3) (3) 0.4 0.5 0 0.1 10- 1 1 10 102 103 104 10- 1 1 10 102 103 104 IC (mA) IC (mA) V =10V I /I =5 CE C B (1) T =- 55(cid:176) C (1) T =- 55(cid:176) C amb amb (2) T =25(cid:176) C (2) T =25(cid:176) C amb amb (3) T =100(cid:176) C (3) T =100(cid:176) C amb amb Fig 5. Base-emittervoltageasafunctionofcollector Fig 6. Base-emitter saturation voltage as a function current; typical values of collector current; typical values PBHV8115T_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 9 December 2008 6 of 12

PBHV8115T NXP Semiconductors 150 V, 1 A NPN high-voltage low V (BISS) transistor CEsat 006aab162 006aab163 1 10 VCEsat VCEsat (V) (V) 1 10- 1 (1) 10- 1 (2) (1) (2) 10- 2 (3) (3) 10- 2 10- 3 10- 3 10- 1 1 10 102 103 104 10- 1 1 10 102 103 104 IC (mA) IC (mA) I /I =5 T =25(cid:176) C C B amb (1) T =100(cid:176) C (1) I /I =20 amb C B (2) T =25(cid:176) C (2) I /I =10 amb C B (3) T =- 55(cid:176) C (3) I /I =5 amb C B Fig 7. Collector-emitter saturation voltage as a Fig 8. Collector-emitter saturation voltage as a function of collector current; typical values function of collector current; typical values 103 006aab164 103 006aab165 RCEsat RCEsat (W ) (W ) 102 102 10 10 (1) (2) 1 1 (1) (2) (3) (3) 10- 1 10- 1 10- 1 1 10 102 103 104 10- 1 1 10 102 103 104 IC (mA) IC (mA) I /I =5 T =25(cid:176) C C B amb (1) T =100(cid:176) C (1) I /I =20 amb C B (2) T =25(cid:176) C (2) I /I =10 amb C B (3) T =- 55(cid:176) C (3) I /I =5 amb C B Fig 9. Collector-emitter saturation resistance as a Fig 10. Collector-emitter saturation resistance as a function of collector current; typical values function of collector current; typical values PBHV8115T_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 9 December 2008 7 of 12

PBHV8115T NXP Semiconductors 150 V, 1 A NPN high-voltage low V (BISS) transistor CEsat 8. Test information VBB VCC RB RC (probe) Vo (probe) oscilloscope oscilloscope 450 W 450 W R2 VI DUT R1 mlb826 Fig 11. Test circuit for switching times 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standardQ101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 9. Package outline 3.0 1.1 2.8 0.9 3 0.45 0.15 2.5 1.4 2.1 1.2 1 2 0.48 0.15 0.38 0.09 1.9 Dimensions in mm 04-11-04 Fig 12. Package outline SOT23(TO-236AB) 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 3000 10000 PBHV8115T SOT23 4mm pitch, 8mm tape and reel -215 -235 [1] For further information and the availability of packing methods, seeSection14. PBHV8115T_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 9 December 2008 8 of 12

PBHV8115T NXP Semiconductors 150 V, 1 A NPN high-voltage low V (BISS) transistor CEsat 11. Soldering 3.3 2.9 1.9 solder lands solder resist 3 1.7 2 solder paste 0.7 0.6 occupied area (3· ) (3· ) Dimensions in mm 0.5 (3· ) 0.6 (3· ) 1 sot023_fr Fig 13. Reflow soldering footprint SOT23(TO-236AB) 2.2 1.2 (2· ) 1.4 (2· ) solder lands 4.6 2.6 solder resist occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig 14. Wave soldering footprint SOT23(TO-236AB) PBHV8115T_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 9 December 2008 9 of 12

PBHV8115T NXP Semiconductors 150 V, 1 A NPN high-voltage low V (BISS) transistor CEsat 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PBHV8115T_2 20081209 Product data sheet - PBHV8115T_1 Modifications: • Table5: I maximum value changed from 100mA to 400mA BM • Figure4: amended • Section 13 “Legal information”: updated PBHV8115T_1 20080204 Product data sheet - - PBHV8115T_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 9 December 2008 10 of 12

PBHV8115T NXP Semiconductors 150 V, 1 A NPN high-voltage low V (BISS) transistor CEsat 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] Theproductstatusofdevice(s)describedinthisdocumentmayhavechangedsincethisdocumentwaspublishedandmaydifferincaseofmultipledevices.Thelatestproductstatus information is available on the Internet at URLhttp://www.nxp.com. 13.2 Definitions damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Draft —The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in Applications —Applications that are described herein for any of these modifications or additions. NXP Semiconductors does not give any products are for illustrative purposes only. NXP Semiconductors makes no representations or warranties as to the accuracy or completeness of representation or warranty that such applications will be suitable for the informationincludedhereinandshallhavenoliabilityfortheconsequencesof specified use without further testing or modification. use of such information. Limiting values —Stress above one or more limiting values (as defined in Short data sheet —A short data sheet is an extract from a full data sheet theAbsoluteMaximumRatingsSystemofIEC60134)maycausepermanent withthesameproducttypenumber(s)andtitle.Ashortdatasheetisintended damagetothedevice.Limitingvaluesarestressratingsonlyandoperationof forquickreferenceonlyandshouldnotbereliedupontocontaindetailedand the device at these or any other conditions above those given in the full information. For detailed and full information see the relevant full data Characteristics sections of this document is not implied. Exposure to limiting sheet, which is available on request via the local NXP Semiconductors sales values for extended periods may affect device reliability. office. In case of any inconsistency or conflict with the short data sheet, the Terms and conditions of sale —NXP Semiconductors products are sold full data sheet shall prevail. subjecttothegeneraltermsandconditionsofcommercialsale,aspublished athttp://www.nxp.com/profile/terms, including those pertaining to warranty, 13.3 Disclaimers intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such General —Information in this document is believed to be accurate and terms and conditions, the latter will prevail. reliable.However,NXPSemiconductorsdoesnotgiveanyrepresentationsor No offer to sell or license —Nothing in this document may be interpreted warranties,expressedorimplied,astotheaccuracyorcompletenessofsuch or construed as an offer to sell products that is open for acceptance or the information and shall have no liability for the consequences of use of such grant,conveyanceorimplicationofanylicenseunderanycopyrights,patents information. or other industrial or intellectual property rights. Right to make changes —NXPSemiconductorsreservestherighttomake Quick reference data —The Quick reference data is an extract of the changes to information published in this document, including without product data given in the Limiting values and Characteristics sections of this limitation specifications and product descriptions, at any time and without document, and as such is not complete, exhaustive or legally binding. notice.Thisdocumentsupersedesandreplacesallinformationsuppliedprior to the publication hereof. Suitability for use —NXP Semiconductors products are not designed, 13.4 Trademarks authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or Notice:Allreferencedbrands,productnames,servicenamesandtrademarks malfunction of an NXP Semiconductors product can reasonably be expected are the property of their respective owners. to result in personal injury, death or severe property or environmental 14. Contact information For more information, please visit:http://www.nxp.com For sales office addresses, please send an email to:salesaddresses@nxp.com PBHV8115T_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 9 December 2008 11 of 12

PBHV8115T NXP Semiconductors 150 V, 1 A NPN high-voltage low V (BISS) transistor CEsat 15. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2 4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5 8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8 8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 8 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 10 Packing information. . . . . . . . . . . . . . . . . . . . . . 8 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11 13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11 14 Contact information. . . . . . . . . . . . . . . . . . . . . 11 15 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Pleasebeawarethatimportantnoticesconcerningthisdocumentandtheproduct(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 9 December 2008 Document identifier: PBHV8115T_2